CN1348608A - 具有透镜的led光源 - Google Patents

具有透镜的led光源 Download PDF

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CN1348608A
CN1348608A CN00806593.4A CN00806593A CN1348608A CN 1348608 A CN1348608 A CN 1348608A CN 00806593 A CN00806593 A CN 00806593A CN 1348608 A CN1348608 A CN 1348608A
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led
light source
lens
led light
packing material
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CN1196204C (zh
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J·-E·索格
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PATRA PATENT TREUHAND
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Abstract

在本发明的光源内将主要为表面安装技术制造的LED(2)埋入到透明的填充材料(3)内,其内包含用于由LED发射光至少部分波长转换的转换器物质,并且一只透镜(4)粘合到透明填充材料上,其中填充材料具有凸表面(3A),并且透镜(4)具有与填充材料凸表面形状适配的凹下底面(4A)。

Description

具有透镜的LED光源
本发明涉及根据权利要求1前序部分的一种光源。
最近发展了在GaN基础上的LED(发光二极管)，以此可以产生兰光或紫外光。借助该LED，可以制造基于波长转换的光源。已经实现的方案规定，一部分由LED发射的兰光通过合适的变换器材料变换为黄光，因此，由于原来的兰光与转换的黄光形成的混色产生白光。在第二方案中建议合适的LED的紫外光转换为可见光谱区。
在两方案中转换器材料或者包含在LED的半导体材料内，或者包含在包围LED的由树脂或类似物构成的外皮材料内。
为了提高在幅射方向元件的幅射强度，LED元件可以配备光学透镜，通过它可对光聚集并且定向幅射。
在图1内示出了这类结构形式的一个例子。其中应用了LED的结构形式，正如例如它在文章“SIEMENS SMT-TOPLED für dieOberflchenmontage(表面装配用的西门子表面安装技术-顶端LED)F.Mllmer和G.Waitl，西门子元件杂志29(1991)，第4期，147页，结合图1所述的那样。这种形式的LED非常小巧，并且在必要时允许许多这类LED串联排列或矩阵排列。
根据图1安排的SMT-TOPLED(表面安装技术-顶端LED)是一只LED 2以其电接触面装配在导电带5上，该导电带与电源的一个极相连，而与电源另一个极相连的对置的导电带5通过压焊丝6与LED 2的另一电接触面连接。两导电带5是用高温固化的热塑料挤压包封的。由此在注塑中形成主体1，其中，存在一凹槽1A，LED 2嵌入其内。热塑体主要具有约90％的高漫散反射系数，所以从LED 2发射的光可以在凹槽1A倾斜的侧壁上额外地向出口方向反射。凹槽1A充以透明树脂材料3，如环氧树脂，它包含转换材料例如合适的着色物质。树脂材料和热塑体仔细地彼此匹配，以使热峰位负荷不会导致机械缺陷。
在运行时，通过例如基于GaN或也可以基于II-VI族化合物制造的LED 2发射兰光或紫外光。在从LED 2到透镜4的光程上，较短波长发射的光幅射在包含变换器材料的树脂填料3中部分地转换为长波长幅射。尤其是在应用兰光LED时，可以应用这样一种变换器材料，通过它可以把兰色光束至少部分地转变为黄色光束。然而，这种结构形式的问题是，从LED 2到透镜4在用变换器材料填满的树脂填料3内光束的不同波长。这导致：在元件的边缘区光束的黄色部分占优势，而与此相反，在中央，在光束内的兰色部分占优势。因此该效应导致随幅射方向或观测方向变化的发射光束的色品位置。
因此，本发明的任务是提供LED光源，其中幅射路径长度通过变换器材料基本上是相同大小，并且光束可以以聚束形式幅射。此外，应提供制造这类光源的方法。
本任务通过权利要求1和13的特征解决。
本发明依靠附图内的实施例详细说明如下。在附图中示出：
图1示出通过具有粘接的透镜的LED光源的实施结构的垂直剖面；
图2示出通过本发明的LED光源的实施例的垂直剖面。
本发明的实施结构在图2内描述，其中对与图1光源相同的或功能相同的元件给予相同的参考符号。所有涉及图1的结构的所述有利特征在图2的本发明的结构中也是可用的。
图2的本发明的光源通过在树脂填料3内的光程长变得统一来解决上述问题。为了达到此目的，制造了具有凸表面3A的树脂填料3，该表面在每一点基本上具有离LED 2相同的距离。在树脂填料内包含的变换器材料的体积部分是如此调整的，使得沿着从LED 2到树脂填料的凸表面3A的该变得统一的光程长足够大的部分兰光转变为黄光，因此对人眼而言幅射看成白色光束。因此在凸表面3A的每一点上，基于部分相等的兰-黄色混合有白先进入位于其上的透镜4。
相反，例如由聚碳酸酯制成的透镜4具有凹表面4A，它与树脂填料3的凸表面3A是形状适配的。
根据图2的本发明的光源按如下方法制造。
LED 2按已述方式与导电带5电学连接，并且导电带5通过热塑材料如此挤压包封，使得形成主体1，并且LED 2处于主体1的凹槽1A里。就这一点，已在Mllmer和Waitl的上述文章里描述。然而这里树脂材料3并不是填充到凹槽1A的边缘，而只到准确确定的填充高度之下。随后，具有凹面下侧4A的图2所描绘形式的预制透镜4置入还处于流体的树脂材料3内，其中树脂填料的表面处于透镜4的凹面下表面4A，使得因此产生树脂填料3的凸表面3A。在置入透镜4之后树脂填料固化。
填入到凹槽1A内的树脂材料3的填充量必须尽可能准确地如此调整，使得直到凹槽1A边缘丢失的体积相当于形成凹面下侧4A的透镜4部分的排出的体积。
树脂填料3的凸表面3A和透镜4的凹面下侧4A的形状已经在透镜4制造时确定。对该形状的前提是，真正的光源，即LED的有效幅射面离该表面的距离是常量。为此目的，LED有效幅射面可以假设为点状的、并且处于有效幅射面的中央点上。
然而，本发明不限于在图2所述的SMT结构形式。例如，主体也可以通过金属块，如具有凹槽的铜块，形成，具有其电接触面的LED装配在其底面上，使得，铜块同时是散热体和电引线。而另外的电引线可以在具有处于其间的绝缘层的铜块的外表面上形成，其中该电引线在树脂填充之前通过压焊线与LED另外的接触面连接。

Claims (13)

1.LED光源，具有
—至少一只LED(2)
—具有包含其内安排LED(2)的一凹槽(1A)的基体(1)，
—由透明材料制成的包围LED(2)的填充料(3)，其内包含用于LED(2)发射光至少部分波长转换的转换器物质，
—与填充材料(3)接触的透镜(4)，
其特征为，
—透镜(4)具有凹面下侧(4A)，并安置在填充材料(3)上，和
—填充材料(3)具有凸表面(3A)，这样，使得填充材料(3)的上侧与透镜凹面下侧形状适配。
2.根据权利要求1所述的LED光源，
其特征为，
填充材料(3)的体积小于具有其内安排LED(2)的凹槽(1A)空间体积。
3.根据权利要求1或2所述的LED光源，
其特征为，
—填充材料(3)的凸面(3A)和透镜(4)的下侧(4A)是这样形成，使得它具有离LED(2)基本恒定的距离。
4.根据权利要求1或2所述的LED光源，
其特征为，
—填充材料(3)的凸面(3A)和透镜(4)的下侧(4A)是这样成形的，使得它离开其有效幅射面的几何中点具有基本恒定的距离。
5.根据权利要求1到4之一所述的LED光源，
其特征为，
—LED(2)是在GaN基底上发兰光的LED，并且安置转换器物质用于在兰色光谱区的光束转换为黄色光谱区的光束。
6.根据权利要求1到4之一所述的LED光源，
其特征为，
LED(2)是发射UV的LED，并且转换器物质把UV光转换到可见光谱区。
7.根据权利要求1到6之一所述的LED光源，
其特征为，
凸面(3A)离LED(2)的距离，尤其是离其有效幅射面几何中心点的距离是这样选择的，使得沿着光束的光程长变换系数约为50％
8.根据权利要求1到7之一所述的光源，
其特征为，
—制造用于表面装配技术的光源。
9.根据权利要求1到8之一所述的光源，
其特征为，
填充材料(3)包含树脂材料，尤其是环氧树脂。
10.根据权利要求1到9之一所述的LED光源，
其特征为，
—基体(1)包含热塑性材料。
11.根据权利要求1到10之一所述的LED光源，
其特征为，
—LED(2)用其电接触面安装在第1印制导线(5)上，
—其另一电接触面通过压焊线(6)与第2印制导线(5)连接，以及
—基体(1)通过围绕导电带(5)注塑制造。
12.根据权利要求1到11之一所述的LED光源，
其特征为，
—凹槽(1A)的侧壁是倾斜的并且是反射的。
13.根据前述权利要求之一所述的LED光源的制法，具有以下工艺步骤：
—在基体内形成具有平坦底面的凹槽，
—把LED安装到底面上，
—填充一定量包含转换材料的透明材料，如树脂材料，到凹槽内，
—准备好一只透镜，预先制好了凸表面和凹下底面，
—把具有其凹下侧面的透镜嵌入到还处于流体的透明材料内，
—透明材料的固化。
CN00806593.4A 1999-04-22 2000-04-07 具有透镜的led光源 Expired - Lifetime CN1196204C (zh)

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CN100388512C (zh) * 2002-06-26 2008-05-14 奥斯兰姆奥普托半导体有限责任公司 可表面安装的微型发光二极管或光电二极管以及它们的制造方法
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DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
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US20070010157A1 (en) 2007-01-11
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CN100452461C (zh) 2009-01-14
US20030211804A1 (en) 2003-11-13
US20020057057A1 (en) 2002-05-16
CN100555681C (zh) 2009-10-28
TW575966B (en) 2004-02-11
CN1196204C (zh) 2005-04-06
CN1881636A (zh) 2006-12-20
CN100452462C (zh) 2009-01-14
CN1645638A (zh) 2005-07-27
CN1881635A (zh) 2006-12-20
US20040232825A1 (en) 2004-11-25
JP2002543594A (ja) 2002-12-17
US7594840B2 (en) 2009-09-29
US6746295B2 (en) 2004-06-08
US7126273B2 (en) 2006-10-24
DE19918370B4 (de) 2006-06-08
US6759803B2 (en) 2004-07-06

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