CN1293602C - Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device - Google Patents
Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device Download PDFInfo
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- CN1293602C CN1293602C CNB2003101007137A CN200310100713A CN1293602C CN 1293602 C CN1293602 C CN 1293602C CN B2003101007137 A CNB2003101007137 A CN B2003101007137A CN 200310100713 A CN200310100713 A CN 200310100713A CN 1293602 C CN1293602 C CN 1293602C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/12044—OLED
Abstract
Circuit board, method of manufacturing the same, transfer chip, transfer source substrate, electro-optical device, and electronic apparatus are provided to maintain a conducting state between a transferred body and a transfer target substrate by forming a pad electrode therebetween. A transfer chip including a thin film electrical circuit and a plurality of first pad electrodes is formed on a first substrate. A second substrate including an electrical circuit wiring and a plurality of second pad electrodes connected to the electrical circuit wiring is formed. The transfer chip on the first substrate is transferred to the transfer target region on the second substrate to connect the thin-film electrical circuit to the electrical circuit wiring, thereby forming a circuit board. The first pad electrodes are arranged over the entire surface of the transfer chip. Each of the first pad electrodes is formed by covering one or more thin-film elements and thin-film wiring included in the thin-film electrical circuit provided under the first pad electrodes. Top parts(56d-1,56d-2,56f-1) of uneven surface portions of the pad electrodes(56d,56f) have approximately the same height.
Description
Technical field
The present invention relates to the reproduction technology between circuit substrate improvement, use the display unit (electro-optical device) and the manufacture method thereof of this technology.
Background technology
In pixel drive, use the display unit (electro-optical device) of thin-film transistor for example to drive in liquid crystal indicator, thin-film transistor driving organic electroluminescence display device and method of manufacturing same, thin-film transistor driven for emitting lights diode display, the thin-film transistor driving electrophoretic display apparatus etc. at thin-film transistor, as a rule, by all parts of thin-film transistor constituent apparatus, major part in addition is made of wiring and supporting substrate etc.When making thin-film transistor and wiring or supporting substrate is one, during through the such display unit (thin-film transistor driving liquid crystal indicator) of same manufacturing process manufacturing, need be used to make senior, the complicated manufacturing process of thin-film transistor, so general manufacturing cost becomes expensive., only in order to connect up and supporting substrate, do not need senior, complicated manufacturing process, manufacturing cost is at a low price.If film former transistor and supporting substrate only to the part configuration thin-film transistor of necessity, just can reduce the manufacturing cost that thin-film transistor drives display unit respectively.
For such hope, developed by on the copy source basis material, forming by what elements such as thin-film transistor constituted and be replicated layer across peel ply, it is joined to together duplicate on the target substrate material, to the peel ply irradiates light, its generation is peeled off, the copy source basis material is broken away from from peel ply, form the clone method of element in the desired location of duplicating the target substrate material.For example open in the flat 10-125931 communique (patent documentation 1) and described such clone method the spy.By using above-mentioned clone method, can a part dispose thin-film transistor in necessity, so, if as all average, can reduce the manufacturing cost of thin-film transistor driving display unit.
[patent documentation 1]
Te Kaiping 10-125931 communique
When using above-mentioned clone method, be replicated body (duplicating chip) to what constitute to the required target substrate material (for example constituting the substrate of display unit etc.) that duplicates when duplicating by circuit that comprises thin-film transistor etc., generally be by corresponding to each other on the target substrate material and form pad electrode (undertaking the splicing ear of electrical connection) being replicated body and duplicating respectively, be replicated the element that comprises in the body and duplicate electrical connection between the wiring that comprises in the target substrate material etc.At this moment, be replicated the pad electrode that is provided with on the body and to duplicate the conducting of the pad electrode that is provided with on the target substrate material be important problem for the raising of performances such as the reduction of the raising of the accepted product percentage of the end article of seeking to comprise the display unit of duplicating target base plate and constituting, cost, durability reliably.
Summary of the invention
Therefore, the objective of the invention is to: provide when pad electrode being set being replicated body and duplicating between the target substrate material, when being electrically connected both, can guarantee the technology of good conducting state.
In order to realize described purpose, the manufacture method of circuit board of the present invention comprises: form the chip that duplicates that duplicates chip comprise by stacked film formed thin film circuit, a plurality of first pad electrodes of using as being used to connect the splicing ear of this thin film circuit and other circuit and form step on first substrate; Formation comprises wiring, be connected on this wiring and be formed on that described to duplicate described first pad electrode in the chip corresponding respectively and the target base plate of duplicating that be configured in second substrate of a plurality of second pad electrodes in the duplicate object district forms step; By described the duplicating in the described duplicate object district of chip on described second substrate on described first substrate duplicated, described thin film circuit is connected on the described wiring, form the copy step of circuit board; Described a plurality of first pad electrode is striden described whole configuration of duplicating the one side of chip, each first pad electrode covering is present in the thin-film component or the film wiring of the described thin film circuit of formation below it and forms, thus, the treble height of the jog that generates on the surface in height forms identical in each pad electrode by forming the Height Adjustment film.
Here, " duplicating chip " of the present invention is meant when using above-mentioned reproduction technology, particularly, use at first becoming to form on the substrate of copy source and be replicated body, then to different with the copy source substrate duplicate that target base plate (for example constituting the substrate of end article) duplicates peel off reproduction technology the time, become as the state that is replicated the least unit of body, for example comprise, bear the function of regulation by various elements and their circuit that constitutes.
Be replicated duplicating chip and become between the substrate (second substrate) that duplicates target and having pad electrode of body when making as such, when carrying out the formation of circuit, the situation of the aligning accuracy of hope when duplicating is guaranteed the size (contact area) of pad electrode to a certain extent.Therefore, usually stride all of the one side (duplicate surface) of duplicating chip, get very large tracts of land, the configuration pad electrode, but at this moment, duplicate each formation that chip one pad electrode (first pad electrode) is striden thin film circuit, so be difficult to avoid produce from the teeth outwards concavo-convex.The concavo-convex reason that becomes the loose contact when causing duplicating easily on the surface of such pad electrode.
Therefore, in the present invention, form pad electrode, make the highest of jog that the surface of pad electrode produces promptly in each pad electrode, to become basic identical at the height of high part.Thus, can make contact-making surface when duplicating the duplicate object region duplication of chip on duplicating target base plate for the basic height that equates, so can guarantee good state.
Wish described a plurality of first pad electrode when forming the wiring of described thin-film component or film,, adjusted the treble height of described jog by additional height adjustment film.Thus, the adjustment of the highest height of jog becomes easy.For example can utilize semiconductor film, the electrically conductive film that uses when forming above-mentioned thin-film component etc. or be arranged on dielectric film between them etc. and form such Height Adjustment film.At this moment, because form the Height Adjustment film together during the formation of thin-film component etc., thus can not cause the increase of step or complicated, easily.In addition, also can the Height Adjustment film be set in addition being used to form outside the film of thin-film component.
Hope forms in the step in the described target base plate of duplicating, described a plurality of second pad electrode covers the described wiring that is present in its below and forms, thus, the treble height of the jog that generates on the surface forms roughly the same in each second pad electrode.Thus, the duplicate object zone of duplicating on the target base plate (second substrate) is uneven, produce on the surface that is formed on second electrode here when concavo-convex, also can make in the duplicate object zone of duplicating on the target base plate and the height of the contact-making surface that duplicates chip, so can guarantee good conducting state for equating substantially.
Wish described a plurality of second pad electrode when forming described wiring,, adjusted the treble height of described jog by additional height adjustment film.Thus, the treble Height Adjustment of jog becomes easy.For example can utilize the conducting film, the dielectric film that use when forming above-mentioned wiring to form such Height Adjustment film.At this moment, because can when the formation of wiring, form the Height Adjustment film together, so can not cause the increase of step or complicated.In addition, also can form the Height Adjustment film in addition being used to form outside the film of wiring.
Wish described a plurality of first pad electrode with described the highest corresponding zone in the membrane structure of described stacked film respectively identical.In addition, wish described second pad electrode with described the highest corresponding zone in the membrane structure of described stacked film respectively identical.Here, in the present invention, " membrane structure is identical " is meant that thickness, membrane material, system film direction etc. are any or all identical.Like this, by making treble membrane structure identical, the treble various characteristics (for example, conductance and mechanical strength) that can make each pad electrode is homogeneous more, so can seek the further raising of conduction state, the raising of reliability.
A kind of method of manufacturing circuit board of the present invention, this method comprises: form and duplicate chip, the formation of duplicating chip comprises: be formed on the wiring on first substrate and form a plurality of first pad electrodes, each first pad electrode all is connected to wiring, and will duplicate chip and be connected to parts, make that duplicating each at least one part of a plurality of parts of first pad electrode more than the chip contacts this parts.
In addition, the manufacture method of circuit board of the present invention comprises: form the chip that duplicates that duplicates chip comprise by stacked film formed thin film circuit, a plurality of first pad electrodes of using as being used to connect the splicing ear of this thin film circuit and other circuit and form step on first substrate; Formation comprises wiring, be connected on this wiring and be formed on that described to duplicate described first pad electrode in the chip corresponding respectively and the target base plate of duplicating that be configured in second substrate of a plurality of second pad electrodes in the duplicate object district forms step; By described the duplicating in the described duplicate object district of chip on described second substrate on described first substrate duplicated, described thin film circuit is connected on the described wiring, form the copy step of circuit board; Described a plurality of first pad electrode is striden described one side of duplicating chip and is all disposed, and each first pad electrode covering is present in the thin-film component or the film wiring of the described thin film circuit of formation below it and forms; Described a plurality of second pad electrode is corresponding with the configuration of described a plurality of first pad electrodes, strides all configurations in described duplicate object district, and each second pad electrode covers the described wiring that is present in its below and forms; Formed described first pad electrode and second pad electrode, made the treble height of the jog that generates on the surface separately of first and second pad electrodes that are configured as a group relatively add up to by forming the Height Adjustment film in height certain.
As mentioned above, wish to guarantee to be respectively formed at the size (contact area) of duplicating chip and duplicating the pad electrode on the target base plate (second substrate) to a certain extent, so each one of thin film circuit or wiring of striding forms, and is difficult to avoid form on the surface concavo-convex.The concavo-convex reason that causes the loose contact when duplicating that becomes easily of such pad electrode.
Therefore, in the present invention,, form first and second pad electrodes respectively, make the treble height of the jog that each pad electrode surface produces add up to certain substantially about being configured as one group first and second electrodes relatively.Thus, make first and second pad electrodes configuration relatively respectively of relative configuration, can guarantee good conducting state.
In addition, in the present invention,, wish to use above-mentioned Height Adjustment film, adjust treble height about first and second pad electrodes.About first and second pad electrodes, wish that treble membrane structure is identical.Based on the effect that adopts dependency structure as mentioned above.
In addition, in above-mentioned the present invention, copy step comprises: duplicate first pad electrode in the chip and be formed on the step that forms adhesive layer between second pad electrode on second substrate being formed on.Thus, can connect first and second pad electrodes more firm and reliably.In addition, suitable use have conductivity adhesive, comprise electroconductive particle and the anisotropic conductive film that constitutes, form adhesive layer.
In addition, duplicate chip and form step and comprise: form and be present in first substrate and duplicate between the chip, have by paying of energy and produce state variation, the step of the peel ply of the character that weakens with the fixation degree that duplicates chip.Thus, when duplicating, can easily duplicate chip from second strippable substrate.In addition, paying in the method for energy, consider the method that heat is provided and carry out the whole bag of tricks such as light-struck method, but wish based on light-struck method of having used laser especially.According to based on light-struck method, can carry out paying to the energy of arbitrary region, can carry out correct contraposition.
In addition, the present invention is a kind of chip that duplicates, on first substrate, form as comprising by stacked film formed thin film circuit at least, be used to connect the replicator of a plurality of pad electrodes of this thin film circuit and other circuit, copy on second substrate that has formed wiring from this first substrate, wherein: described a plurality of pad electrodes are striden described one side of duplicating chip and are all disposed, each pad electrode covering is present in the thin-film component or the film wiring of the described thin film circuit of formation below it and forms, thus, the treble height of the jog that generates on the surface in height be formed in by forming the Height Adjustment film form in each pad electrode roughly the same.
Contact-making surface when duplicating the duplicate object region duplication of chip on duplicating target base plate (second substrate) by adopting relevant structure, can making is for the basic height that equates, so can guarantee good conducting state.
In addition, the present invention also provides a kind of copy source substrate that duplicates chip that is formed with a plurality of the invention described above on substrate.In addition, this copy source substrate preferably also comprises: be present in substrate and duplicate between the chip, have by paying of energy and produce state variation, the peel ply of the character that weakens with the described fixation degree that duplicates chip.
In addition, the present invention also provides the electro-optical device that a kind of use is made according to the circuit board of the manufacture method manufacturing of foregoing invention.More specifically, be above-mentioned circuit board of combination and the electro-optical device that constitutes by the electrooptic cell of this circuit board control action.Perhaps, the present invention also provides a kind of above-mentioned electro-optical device that duplicates chip or copy source substrate and make that uses.Thus, can improve the accepted product percentage of electro-optical device, reduce cost, the performance of raising durability etc.In addition, in " electro-optical device " of the present invention, comprise various electrooptic cells such as (EL) element that has electroluminescence, electroluminescent element, luminescence of plasma element, electrophoresis element, liquid crystal cell and the display unit that constitutes.
In addition, the present invention also provides a kind of electronic instrument that the electro-optical device of the invention described above is used as display part.Here, in electronic instrument, comprise video camera, mobile phone, personal computer, portable information terminal device (or PDA), other various instruments.The electro-optical device of the application of the invention can provide the reduction of electronic instrument rate of finished products, cost and durability etc.
Description of drawings
Fig. 1 is the figure that the structure of organic EL display represented in summary.
Fig. 2 is the figure of the structure of pixels illustrated.
Fig. 3 is the plane graph of the internal structure of expression chip.
Fig. 4 is the figure of explanation pad electrode.
Fig. 5 is the figure of the height of explanation pad electrode.
Fig. 6 is the figure that explanation is formed on the pad electrode on the pixel.
Fig. 7 is the figure that explanation is formed on the pad electrode on the pixel.
Fig. 8 is the figure of the manufacture method of explanation present embodiment.
Fig. 9 is the figure of the manufacture method of explanation present embodiment.
Figure when Figure 10 is explanation use anisotropic conductive film formation adhesive layer.
Figure 11 is the figure of concrete example that expression can be used the electronic instrument of organic EL display.
Figure 12 illustrates that the total of the highest height of each the paired pad electrode that is disposed by subtend becomes the figure of a timing substantially.
Among the figure: 20,30-wiring; 34-chip (duplicating chip); 36,36a～36j, 54a～54j-pad electrode (splicing ear); 36d-1,36d-2,36f-1,36f-2,56d-1,56d-2, the highest portion of 56f-1-; The 40-pixel electrode; The 42-public electrode; The 44-luminescent layer; The organic EL of 100-(electroluminescence) display unit; The 101-pixel.
Embodiment
Below, the driving display unit of thin-film transistor of having used one embodiment of the present of invention is described.In the present embodiment, as an example of the driving display unit of thin-film transistor, illustrate that comprise electrooptic cell a kind of is organic EL and the organic EL display that constitutes.
Fig. 1 is the figure that the organic EL display structure of present embodiment represented in summary.The structure of organic EL display 100 shown in Figure 1 is: be arranged as a plurality of pixels (base pixel) 101 that comprise three colored pixels 1,2,3 rectangular.
In each colored pixels, for example colored pixels 1 is with red corresponding, and colored pixels 2 is with green corresponding, and colored pixels 3 is with blue corresponding.Use to comprise each pixel 101 of chip drives of the drive circuit (thin film circuit) of a plurality of thin-film transistors (TFT) built-in.
Fig. 2 is the figure of the structure of pixels illustrated 101.The plane graph of Fig. 2 (a) remarked pixel 101, the A-A ' cutaway view of Fig. 2 (b) presentation graphs 2 (a).In addition, in Fig. 2 (a), for convenience of explanation, omit a part that has shown inscape.
As shown in Figure 2, pixel 101 begins stacked in order formation first wiring layer 12, second wiring layer 14, light emitting element layer 16 from lower floor on the substrate 10 that is made of insulating material such as glass.In addition, in Fig. 2 (a),, omit the part and the light emitting element layer 16 that have shown second wiring layer 14 for the structure of first and second wiring layers is described.
First wiring layer 12 is by being formed on wiring 20 on the substrate 10, being used for being electrically connected the peristome 22 that is provided with between the wiring (back description) that this wiring 20 and second wiring layer 14 comprise and constituting.By the wiring and wiring 20 local contacts that comprises in these peristome 22, the second wiring layers 14, both electrical connections have been sought.In addition, between each wiring, form insulating element (for example, silica etc.).In addition, in Fig. 2 (a), omit and represented this insulating element.
Second wiring layer 14 comprises: be formed on wiring 30 on first wiring layer 12, be used for being electrically connected plug 32 between the electrode (back description) that this wiring 30 and light emitting element layer 16 comprise, be used for driven light-emitting element layer 16 chip 34, be used to be electrically connected the pad group 38 who constitutes by a plurality of pads 36 between this chip 34 and the holding wire 30.In addition, at Fig. 2 (a) though in omitted diagram, between each holding wire 30 or each plug 32, form insulating element (for example, silica etc.).In addition, in Fig. 2 (a), omitted diagram, but this chip 34 is formed on the above-mentioned pad group 38 about chip 34.
In the present embodiment, form wiring by first wiring layer and second wiring layer.In addition, chip 34 is made of a plurality of thin-film transistors, has the function of each colored pixels 1,2,3 that comprises in 1 pixel 101 of independent respectively control.This chip 34 is formed on other substrates (copy source substrate) different with substrate 10, then, from the copy source strippable substrate, copies on the substrate 10.
In addition, this chip 34 is corresponding with " duplicating chip ".The back will be described the details of this clone method in detail.
Light emitting element layer 16 has: be formed on three pixel electrodes 40 on second wiring layer 14, with the public electrode 42 of these pixel electrode 40 relative formation, be configured in three luminescent layers 44 between each pixel electrode 40 and the public electrode 42, be formed on the protective layer 46 on the public electrode 42.In addition, between each pixel electrode 40 or each luminescent layer 44, form insulating element (for example, silica etc.).Form 3 light-emitting components (electrooptic cell) by each pixel electrode 40, stacked each luminescent layer 44, public electrode 42 thereon, constitute three colored pixels 1,2,3 respectively by each light-emitting component.By above-mentioned chip 34, by the independent supplying electric current of 40 pairs of each luminescent layers of each pixel electrode, 44 difference, each color pixel 1,2,3 of independent switch respectively.
Below, instantiation describes the internal structure of the chip 34 of present embodiment in detail.
Fig. 3 is the plane graph of the internal structure of expression chip 34.In Fig. 3,, omit the inscape that is provided with on the upper surface of these thin-film transistors of expression etc. in order to understand the structure of the thin-film transistor (TFT) that comprises in the chip 34 or film wiring etc. easily.About having omitted illustrated inscape, the back is illustrated.
As shown in Figure 3, chip 34 comprises: three switching thin-film transistor ST1, ST2, the ST3 that arrange to form at above-below direction in right side area, arrange 3 drive thin film transistors DT1, DT2, the DT3 that forms at left and right directions in left field.
In the present embodiment, for a colored pixels, drive by the image element circuit that a switching thin-film transistor and drive thin film transistors are constituted.Particularly, switching thin-film transistor ST1 shown in Figure 3 makes drive thin film transistors DT1 work according to input signal (sweep signal).Drive thin film transistors DT1 control flows is to the electric current of the luminescent layer 44 that constitutes colored pixels 1.Equally, the image element circuit control flows by having made up switching thin-film transistor ST2 and drive thin film transistors DT2 is to the electric current of the luminescent layer 44 that constitutes colored pixels 2.Image element circuit control flows by having made up switching thin-film transistor ST3 and drive thin film transistors DT3 is to the electric current of the luminescent layer 44 that constitutes colored pixels 3.
Each above-mentioned switching thin-film transistor and each drive thin film transistors comprise: the first film wiring layer; Have the semiconductor film of the active area that forms thin-film transistor etc., be formed on the semiconductor layer on the first film wiring layer; With the second film wiring layer that is formed on this semiconductor layer.In Fig. 3, in order to distinguish each layer easily, the first film wiring layer is expressed as entirely in vain, semiconductor layer is used to the thick hacures of bottom right represented, the second film wiring layer is used to upper right thin hacures represented.In addition, the interlayer at each layer forms by SiO
2Deng the insulating barrier that constitutes.
Below, with reference to Fig. 3,, further describe its structure to the first film wiring layer, semiconductor layer, the second film wiring layer.
The first film wiring layer 50 comprises film wiring 50a～50d.The gate electrode that film wiring 50a holds a concurrent post each switching thin-film transistor ST1, ST2, ST3, and be electrically connected with the film wiring 54a that comprises in second wiring layer.For this film wiring 50a,, can control the action of each switching thin-film transistor ST1, ST2, ST3 by supplying with sweep signal through film wiring 54a.
In addition, film wiring 54a has omitted diagram in Fig. 3, but in fact be electrically connected with the pad of the top that is arranged on the second film wiring layer (be responsible for is electrically connected splicing ear), by this pad electrode, from the outside of chip 34 to the 54a transmission scan signal that connects up.The back will describe pad electrode in detail.Like this, in the present embodiment, by publicization of wiring to each switching thin-film transistor ST1, ST2, ST3 supply sweep signal, become a public wiring, not only reduce the required area of formation of first wiring layer, and cut down the number of pad electrode, thus the dwindling of size of realizing chip 34.Because pad electrode number (in other words, tie point) reduces, reduced the frequency that bad connection takes place when duplicating.
Film wiring 50b is electrically connected with semiconductor film 52a, undertakes the function of the electric current of supplying with from switching thin-film transistor ST1 to drive thin film transistors DT1 transmission, and the gate electrode of holding a concurrent post drive thin film transistors DT1.
Film wiring 50c is electrically connected with semiconductor film 52b by the wiring 54d that comprises in second wiring layer, undertake the function of the electric current of supplying with from switching thin-film transistor ST2 to drive thin film transistors DT2 transmission, and the gate electrode of holding a concurrent post drive thin film transistors DT2.
Film wiring 50d is electrically connected with semiconductor film 52c, undertakes the function of the electric current of supplying with from switching thin-film transistor ST3 to drive thin film transistors DT3 transmission, and the gate electrode of holding a concurrent post drive thin film transistors DT3.
Semiconductor layer comprises semiconductor film 52a～52k.An end one side of semiconductor film 52a is connected with film wiring 54b, and the other end one side is connected with film wiring 50b, serves as the active area of switching thin-film transistor ST1.An end one side of semiconductor film 52b is connected with film wiring 54c, and the other end one side is connected with film wiring 54d, serves as the active area of switching thin-film transistor ST2.An end one side of semiconductor film 52c is connected with film wiring 54e, and the other end one side is connected with film wiring 50d, serves as the active area of switching thin-film transistor ST3.
Semiconductor film 52d is connected respectively with film wiring 54g, 54f, and is connected with the pad electrode of describing later (not shown here), serves as the active area of drive thin film transistors DT1.Semiconductor film 52e is connected respectively with film wiring 54h, 54i, and is connected with the pad electrode of describing later (not shown here), serves as the active area of drive thin film transistors DT2.Semiconductor film 52f is connected respectively with film wiring 54j, 54k, and is connected with the pad of describing later (not shown here), serves as the active area of drive thin film transistors DT3.
Semiconductor film 52g is formed on the lower floor of film wiring 54c, is used to adjust the pad electrode height on the upper strata that is formed on this film wiring 54c.Equally, semiconductor film 52h is formed on the lower floor of film wiring 54e, is used to adjust the pad electrode height on the upper strata that is formed on this film wiring 54e.In addition, semiconductor film 52i, 52j, 52k are electrodes respectively equally, are used to adjust the pad electrode height that is respectively formed on film wiring 54b, 54a, the 54k.In addition, the back will be described the details (particularly prescriptive procedure of pad electrode " highly " etc.) of pad electrode in detail.
Like this, in the present embodiment, when the semiconductor film of active area of thin-film transistor was served as in formation, the semiconductor film that is formed for adjusting the pad electrode height together i.e. " Height Adjustment film ".Thus, can not cause the increase of manufacturing step and complicated, just can suitably adjust the height of pad electrode.In addition, during except the use semiconductor film, also can utilize film wiring or dielectric film etc. to form the Height Adjustment film.
The second film wiring layer comprises wiring 54a～54k.Here,, undertake the internal circuit of chip 34 and the pad electrode of outside electrical connection, comprise the annexation with film wiring 54a～54k, be illustrated about being formed on the top of the second film wiring layer.
Fig. 4 is the figure of explanation pad electrode.As shown in Figure 4, above the second film wiring layer of chip 34, be provided with 10 pad electrode 56a～56j.The corresponding one to one formation of each pad 36 (with reference to Fig. 2) that comprises in these pad electrodes 56a～56j and the above-mentioned pixel 101.Chip shown in Figure 4 34 is put upside down,, carried out duplicating of chip 34 each pad electrode 36 relative being pasted together of the pad group 38 who comprises in each pad electrode 56a etc. and the above-mentioned pixel shown in Figure 2 101.The clone method of chip 34 is described in the back.
Pad electrode 56a is electrically connected with film wiring 54a by the peristome 55a that is formed on the dielectric film on the second film wiring layer.By this pad electrode 56a, provide sweep signal, driving switch thin-film transistor ST1～ST3 from the outside to film wiring 54a.Pad electrode 56b is electrically connected with film wiring 54b by the peristome 55b that is formed on the dielectric film on the film wiring 54b.By this pad electrode 56b from the outside to film wiring 54b supplying electric current, to the active area supplying electric current of switching thin-film transistor ST1.Pad electrode 56c is electrically connected with film wiring 54c by the peristome 55c that is formed on the dielectric film on the film wiring 54c.By this pad electrode 56c from the outside to film wiring 54c supplying electric current, to the active area supplying electric current of switching thin-film transistor ST2.Pad electrode 56d is electrically connected with film wiring 54e by the peristome 55d that is formed on the dielectric film on the film wiring 54e.By this pad electrode 56d from the outside to film wiring 54e supplying electric current, to the active area supplying electric current of switching thin-film transistor ST3.
Pad electrode 56e is electrically connected with film wiring 54f by the peristome 55e that is formed on the dielectric film on the film wiring 54f.By this pad electrode 56e from the outside to film wiring 54f supplying electric current, to the active area supplying electric current of drive thin film transistors DT1.Pad electrode 56f is electrically connected with wiring 54g by the peristome 55f that is formed on the dielectric film on the film wiring 54g.This pad electrode 56f is electrically connected with one of above-mentioned pad electrode 36.And, from the electric current of drive thin film transistors DT1 output by film connect up 54g, pad electrode 56f, the pad electrode 36 that is electrically connected with this pad electrode 56f offers colored pixels 1.
Pad electrode 56g is electrically connected with wiring 54h by the peristome 55g that is formed on the dielectric film on the film wiring 54h.By this pad electrode 56g from the outside to film wiring 54h supplying electric current, to the active area supplying electric current of drive thin film transistors DT2.Pad electrode 56h is electrically connected with film wiring 54i by the peristome 55h that is formed on the dielectric film on the film wiring 54i.This pad electrode 56h is electrically connected with one of above-mentioned pad electrode 36.And, from the electric current of drive thin film transistors DT2 output by film connect up 54i, pad electrode 56h, the pad electrode 36 that is electrically connected with this pad electrode 56h offers colored pixels 2.
Pad electrode 56i is electrically connected with film wiring 54j by the peristome 55i that is formed on the dielectric film on the film wiring 54j.By this pad electrode 56i from the outside to film wiring 54j supplying electric current, to the active area supplying electric current of drive thin film transistors DT3.Pad electrode 56j is electrically connected with film wiring 54k by the peristome 55j that is formed on the dielectric film on the film wiring 54k.This pad electrode 56j is electrically connected with one of above-mentioned pad electrode 36.And the electric current of exporting from drive thin film transistors DT3 offers colored pixels 3 by the pad electrode 36 that connects up 54k, pad electrode 56i, be electrically connected with this pad electrode 56i.
Below, the height of each the pad 56a～56j that is provided with is described on the chip 34.
Fig. 5 is the figure of explanation pad electrode height.Particularly, Fig. 5 (a) observes the cutaway view of pad electrode 56d from Fig. 3 and B-B ' direction shown in Figure 4, and Fig. 5 (b) observes the cutaway view of pad electrode 56f from Fig. 3 and C-C ' direction shown in Figure 4.
Shown in Fig. 5 (a), it is " the highest portion " from the highest part of the height (distance of leaving) of the bottom surface of chip 34 that pad electrode 56d has two places.And the height that this two place the highest 56d-1,56d-2 are respectively the bottom surface of leaving chip 34 is L1.In addition, shown in Fig. 5 (b), pad electrode 56f has the highest the 56f-1 at 1 place, and the height that this highest 56f-1 leaves the bottom surface of chip 34 is L1.About not shown other pad electrodes 56a etc., also having 1 place at least, to leave the height of the bottom surface of chip 34 be the highest portion of L1.
Be that a plurality of pad electrode 56a～56j are formed on laminate film wiring layer or semiconductor layer and on the upper surface of the thin film circuit that forms, so become non-flat forms with the contact-making surface of outside (particularly, configuration respectively contain disc electrode 34) relatively.Therefore, in the present embodiment, each pad electrode has the highest portion in 1 place at least respectively, and each pad electrode is formed these the highest portions becomes essentially identical height L1.Like this, that treble height is become at L1 substantially is identical in order to adjust, and does not have the structure to thin film circuit the semiconductor film (perhaps dielectric film) of directly contribution suitably to form as the Height Adjustment film.
In addition, in example shown in Figure 5, the bottom surface of chip 34 as " datum level ", stipulated each treble height L1, but datum level is not limited thereto, can be can be as other planes of public benchmark (for example, the formation face of film wiring 50a, the formation face of semiconductor film 52e etc.) as datum level.
Below, describe in detail be formed on above-mentioned chip 34 on each pad electrode 56a～56j corresponding one to one, and be formed on a plurality of pad electrodes 36 on each pixel 101.
Fig. 6 and Fig. 7 are the figure that explanation is formed on the pad electrode 36 on the pixel 101.Fig. 6 amplifies the figure that expression comprises the zone of the pad electrode 36 in the pixel shown in Figure 2 101.Here, for convenience of explanation, in order to distinguish each pad electrode 36, displacement pad electrode 36a～36j and symbol easily.Each pad electrode 36a～36j is corresponding with pad electrode 56a～56j on the chip 34 respectively.In addition, Fig. 7 (a) expression is from the cutaway view of D-D ' direction observation pad electrode 36d shown in Figure 6, and the cutaway view of pad electrode 36f is observed in Fig. 7 (b) expression from E-E ' direction shown in Figure 6.
Shown in Fig. 7 (a), having the height of 2 places from substrate 10 bottom surfaces that formed pixel portions 101 is " the highest portion " for the highest part.
And the height that this highest part in 2 place is taken leave of the bottom surface of substrate 10 is L2.In addition, shown in Fig. 7 (b), pad electrode 36f has 2 places the highest 36f-1,36f-2, and the height of these the highest 36f-1,36f-2 becomes L2.And at other not shown pad electrode 36a, also having the height of 1 place from the bottom surface of substrate 10 respectively at least is the highest portion of L2.
Be that a plurality of pad electrode 34a～34j are formed on stacked wiring layer or insulating barrier and on the upper surface of the wiring that forms, so become non-flat forms with the contact-making surface of outside (particularly, each pad electrode 56a of configuration) relatively.Therefore, in the present embodiment, each pad electrode has the highest portion in 1 place respectively at least, and forms each pad electrode, makes their the highest portion become essentially identical height L2.In addition, a plurality of pad electrode 34a～34j with the highest corresponding zone in the membrane structure of stacked film respectively identical.
In addition, in example shown in Figure 7, though the Height Adjustment film is not set especially, the formation position according to pad electrode also is necessary to be provided with sometimes.At this moment,, do not have the structure to wiring the dielectric film of directly contribution suitably to form as the Height Adjustment film for identical for becoming at L2 treble Height Adjustment, that's all.The situation (with reference to Fig. 5) of concrete method and above-mentioned pad electrode 56a is same.
The chip 34 of present embodiment has above-mentioned structure, below, the manufacture method of the organic EL display of present embodiment is described.In the present embodiment, use and on the copy source substrate, to form a plurality of above-mentioned chips 34, then this chip 34 from first strippable substrate, copy to the reproduction technology on the substrate that constitutes organic EL display.In the following description, be conceived to the clone method detailed description of chip 34.
Fig. 8 and Fig. 9 are the figure of the manufacture method of explanation present embodiment.This clone method comprises first step～the 5th step of following explanation.
＜first step 〉
First step forms peel ply (light absorbing zone) 62 on copy source substrate 60 shown in Fig. 8 (a).
Copy source substrate 60 wishes to have the light transmission of energy transmissive.Thus, can by rayed, can peel ply be peeled off by the copy source substrate to the peel ply irradiates light.At this moment, wish that the optical transmission rate is more than 10%, more wish to be more than 50%.This transmissivity is high more, and the decay of light (loss) is more little, with littler light quantity peel ply 62 is peeled off.
In addition, copy source substrate 60 wishes to be made of the high material of reliability, and special hope is made of the material of excellent heat resistance.Its reason is: when the formation conduct is replicated the chip 34 of body, according to its kind or formation method, sometimes technological temperature rising (for example about 350～1000 ℃), even in this case, need only the excellent heat resistance of copy source substrate 60, can enlarge the setting range of the membrance casting conditions such as temperature conditions when on copy source substrate 60, forming chip 34.Thus, required high-temperature process becomes possibility when making a plurality of chip on the copy source substrate, energy fabrication reliability height, high performance element or circuit.
Therefore, when the maximum temperature when the formation of copy source substrate 60 at chip 34 is Tmax, wish by deformation point to be that material more than the Tmax constitutes.Particularly, the constituent material of copy source substrate 60 wishes that deformation point is more than 350 ℃, more wishes more than 500 ℃.As such material, list thermal endurance glass such as quartz glass, taper 7059, NEC glass OA-2.
In addition, though the not restriction especially of the thickness of copy source substrate 60 wishes to be about 0.1～5.0mm usually, more wish to be 0.5～1.5mm.If the thickness of copy source substrate 60 is thicker, then intensity further rises, if thinner, then when the transmissivity of copy source substrate 60 is low, the decay of the third contact of a total solar or lunar eclipse of more having difficult labour.
In addition, when the light transmission of copy source substrate 60 was high, its thickness can surpass described higher limit.In addition, for energy uniform irradiation light, the thickness of copy source substrate 60 wishes it is uniform.
Like this, in the copy source substrate, have various conditions, but the copy source substrate with become end article to duplicate target base plate different, can reuse, so,, also can reduce the rising of manufacturing cost by reusing even use material than higher price.
Peel ply 62 has the light that absorbs irradiation, in its layer and/or produce and peel off the character of (below be called " peeling off in layer ", " interface peel ") on the interface, hope is by the irradiation of light, constitute between the atom of material of peel ply 62 or intermolecular bonding force disappears or reduces, promptly produce wearing and tearing, reach and peel off in the layer and/or interface peel.
Irradiation by light is also arranged, emit gas, the situation of performance separating effect from peel ply 62.Promptly exist: the composition that comprises in the peel ply 62 becomes the situation that gas is emitted; Peel ply 62 absorbing light become gas in a flash, let off steam, and help the situation of separating.As the composition of such peel ply 62, for example list the composition described in following A～F.
(A) non-crystalline silicon (a-Si)
In this non-crystalline silicon, can comprise hydrogen (H).At this moment, the content of H wish be 2 atom % above about, more wish to be about 2～20 atom %.
(B) various oxide ceramics, dielectric (strong dielectric body) or semiconductors such as silica or silicate compound, titanium oxide or titanic acid compound, zirconia or zirconic acid compound, lanthana or lanthanum acid compound.
(C) pottery or dielectric (strong dielectric body) or semiconductors such as PZT, PLZT, PLLZT, PBZT.
(D) nitride ceramicss such as silicon nitride, aluminium nitride, titanium nitride.
(E) high-molecular organic material
As high-molecular organic material, can be have-CH-,-CO-(ketone) ,-CONH-(amino-compound) ,-NH-(acid imide) ,-COO-(ester) ,-N=N-(azo) ,-CH=N-(schiff base) is (by the irradiation of light, their key is cut off) material, particularly have the material of a lot of these keys.In addition, high-molecular organic material can be to have aromatic series charing hydrogen (phenyl ring more than 1 or 2 or its sealed ring) in constitutional formula.
Concrete example as such high-molecular organic material lists: polyenes such as polyethylene, polypropylene, polyimides, polyamide, polyester, polymethyl methacrylate (PMMA), polyhenylene sulfuration thing (PPS), polyester sulphur (PES), epoxy resin etc.
(F) metal
As metal, list Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm or comprise a kind of alloy in them at least.In addition, also can constitute peel ply with hydrogen-containing alloy.When peel ply is used hydrogen-containing alloy, be accompanied by the irradiation of light, emit hydrogen, thus, promote peeling off of peel ply.
In addition, also can constitute peel ply with nitrogen-containing alloy.When peel ply has been used nitrogen-containing alloy, be accompanied by the irradiation of light, emit nitrogen, thus, promote peeling off of peel ply.Also can make peel ply is that multilayer film constitutes.Multilayer film for example can be that the metal film of noncrystalline silicon film and formation on it constitutes.As the material of multilayer film, can constitute by described pottery, metal, at least a of high-molecular organic material.
The formation method of peel ply 62 limits especially, suitably selects according to each conditions such as film composition and thickness.For example, list various gas phases such as CVD, sputter and become coating processs such as embrane method, various galvanoplastic, rotary plating, various print process, replica method, ink-jet coating method, powder spraying process etc., also can make up in them more than two, form peel ply.
In addition, Fig. 8 (a) though in expression, can be according to copy source substrate 60 and peel ply 62 performances, between copy source substrate 60 and peel ply 62, be provided for improving the intermediate layer of both close property.This intermediate layer is for example during fabrication or when using, and performance is replicated layer as protection physically or chemically protective layer, insulating barrier, prevention composition is to the transfer that is replicated layer or at least a from the function in the barrier layer of the transfer (moving) that is replicated layer, reflector.
＜the second step 〉
Below, second step is described.Second step forms a plurality of chips 34 on peel ply 62 shown in Fig. 8 (b).Constitute by a plurality of chips 34 the layer be called be replicated the layer 64.
In the manufacturing of thin-film transistor, require high-temperature technology to a certain degree, the basis material that forms thin-film transistor is necessary to satisfy various conditions as the copy source substrate.In the manufacture method of present embodiment, can make thin-film transistor with the copy source substrate that satisfies various conditions after, thin-film transistor copied to do not satisfied on this final substrate of creating conditions.Promptly in the manufacture method of present embodiment, have: as final substrate, can use the substrate that constitutes by more cheap material, can cut down the advantage of manufacturing cost; Can use to have flexible flexible base, board, the range of choice of final substrate becomes big advantage.
Here, the separation that is replicated each chip 34 in the layer 64 is described.Separation method as each chip 34, consider method, thereby particularly be not provided for the method for separated structures, only separate the method for peel ply and be separated into the method that respectively is replicated body easily by the structure that on the copy source substrate, forms regulation by etch separates.Here, the method for separating each chip 34 fully is described.
Shown in Fig. 8 (c), for each chip 34 is separated respectively, become the ditch 62c of recess structure by formation such as wet etching or dry ecthings in the periphery in the zone that is equivalent to chip 34, each chip 34 residual be island.This ditch 62c is at the thickness direction of substrate, and cutting is replicated whole (with reference to Fig. 8 (c)) or the part (with reference to Fig. 8 (d)) of the whole and peel ply 62 of layer 64.This cutting can be than being the more shallow of object to be replicated layer 64 only.This ditch 62c is except shown in Fig. 8 (d), and etching is formed into the part of peel ply 62, also can be shown in Fig. 8 (c), etching peel ply 62 fully, make each chip 34 and the peel ply 62 under it with identical shaped residual be island.Form same chip 34,, be configured on the copy source substrate 60, in strip step (step of describing 4 and 5 later), can easily only duplicate required chip 34 respectively being replicated body uniformly-spaced to carry out etching.
Be replicated layer 64 by cutting in advance, a part of peeling off body is fitly peeled off along this regional shape, can prevent that this zone is destroyed when peeling off.In addition, can make be accompanied by peel off be replicated layer 64 the disrumpent feelings adjacent area that do not involve.In addition, by in film thickness direction cutting, promptly be used in when joining to specific chip 34 a little less than the engaging force that duplicates the adhesive layer on the target substrate material, also can peel off chip 34.In addition, the outward appearance in zone that becomes duplicate object is clear and definite, so the contraposition during duplicating between substrate becomes easy.
In addition, shown in Fig. 8 (e), also can carry out etching, and make peel ply 62 also littler than the gross area on the peel ply composition surface that is replicated body to the bonding area of chip 34.Like this, by peel ply 62 is crossed etching, the area of peel ply reduces, thus when peel ply 62 irradiates lights are peeled off, can peel off reliably with little power, and, can reduce necessary luminous energy when peeling off by dwindling peel ply 62.
Shown in Fig. 8 (d), an etching is replicated layer 64, forms ditch 62c, makes peel ply 62 keep continuous and residual.Do not pay energy if can have with omitting, this regional peel ply 62 is produced reliably peel off the zone that has formed chip, so, even the crack is not set on one's body certainly, the required body that is replicated is peeled off at peel ply 62.
＜third step 〉
Then, shown in Fig. 9 (a), on one side the face of formation chip 34 1 sides of copy source substrate 60 and duplicate target base plate 66 duplicate chip 34 1 sides in the face of neat, overlapping on one side, by according to the additional pressing force of necessity, only the chip 34 that should duplicate is joined to by the adhesive layer 68 with conductivity selectively and duplicate on the target base plate 66.
Here, in the present embodiment, on above-mentioned substrate 10, form first wiring layer 12, on this first wiring layer 12, formed connect up 30 and the substrate (with reference to Fig. 2) of the state of pad electrode 36 be equivalent to duplicate target base plate 66 shown in Fig. 9 (a).And, make this duplicate each the pad 56a electrode that is provided with on each pad electrode 36 that comprises in the target base plate 66 and the chip 34 that becomes duplicate object and contact, carry out the stickup of chip 34.
Suitable example as the adhesive that constitutes above-mentioned adhesive layer 68 lists various curing adhesives such as Photocurable pressure-sensitive adhesive such as reaction-curable adhesive, heat-curing type adhesive, ultraviolet-curing adhesive.As the composition of adhesive, for example, can be material arbitrarily such as epoxies, acrylics, silicon class.In addition, during the adhesive sold on using market, the adhesive of use is adjusted to the viscosity that is suitable for applying by adding suitable volume.
In the present embodiment, 68 of adhesive layers form on the chip 34 that should duplicate, and are perhaps only forming with chip 34 corresponding the duplicating on the target base plate 66 that should duplicate.Can use various print processes or liquid ejection method, the part of implementing such adhesive layer 68 forms.In liquid ejection method, exist: utilize the distortion of piezoelectrics, the piezo jet method of ejection liquid; Or, make the method for liquid ejection etc. by heat generation bubble.In the present embodiment, illustration the formation of adhesive layer 68 of use ink-jet coating (liquid ejection) method.
In addition, as shown in figure 10, also be fit to use the anisotropic conductive film that comprises electroconductive particle and constitute to form adhesive layer 69.At this moment, adhesive layer need not be set respectively on each pad electrode, so so do not require aligning accuracy.
＜the four step 〉
Then, shown in Fig. 9 (b), from copy source substrate 60 and copy source substrate 60 1 sides of duplicating the conjugant of target base plate 66,, only produce and peels off (peeling off and/or interface peel in the layer) to the peel ply 62 of the chip 34 that should duplicate irradiates light L selectively by only at a peel ply 62 that supports the chip 34 that duplicate.
Peel off in the layer of peel ply 62 and/or principle that interface peel produces is that in addition, emitting of the gas that comprises in the peel ply 62 also has the fusing, the evaporation phase transformations such as (gasifications) that produce after the irradiation owing to produce wearing and tearing in the constituent material of peel ply 62.
Here, wearing and tearing are meant that the immobilization material (constituent material of peel ply 62) that has absorbed irradiates light is energized on photochemistry or aspect hot, its surface and the atom of inside or the key of molecule are cut off, emitted, mainly shown as all or part of generation fusing of the constituent material of peel ply 62, the existing picture of evaporation phase transformations such as (gasifications).In addition, because described phase transformation becomes the micro-bubble state, bonding force descends sometimes.
Peel ply 62 produces in the layer and peels off or interface peel or both sides, and these are stripped from about the composition or other a variety of causes of layer 62, as one of reason, lists the conditions such as kind, wavelength, intensity, the arrival degree of depth of the light of irradiation.
As the light L of irradiation, if being produced in the layer, peels off and/or interface peel peel ply 62, just can be arbitrarily, for example X ray, ultraviolet ray, visible light, infrared ray, laser etc.
Wherein, be easy to generate peel off (wearing and tearing) of peel ply 62, and can realizing the aspect of high-precision local irradiation, hope is laser.As laser, hope is the laser with wavelength 100nm～350nm.Like this, by using laser, improved the rayed precision, and can efficiently carry out peeling off of peel ply 62.
As the laser aid that such laser is produced, be fit to use excimer laser.Excimer laser is at shortwave district output high-energy, so can therefore, not heat up substantially with utmost point chien shih peel ply 62 generation wearing and tearing in short-term in adjacent duplicating on the target base plate 66 and first substrate etc., can can not produce under the prerequisite of deterioration, damage at chip 34, peel off peel ply 62.
Perhaps, make peel ply 62 that phase transformations such as gas is emitted, gasified, distillation for example take place, when stalling characteristic was provided, the Wavelength of Laser of irradiation was wished for about 350nm～1200nm.The laser of this wavelength can use YAG, gas laser etc. at general widely used LASER Light Source of manufacture field and irradiation unit, can and carry out rayed simply with cheapness.In addition, by using the laser of such visible region wavelength, it is just passable that copy source substrate 60 has the visible light light transmission, can expand the selection degree of freedom of copy source substrate 60.
In addition, the energy density of the laser of irradiation, particularly the energy density during excimer laser wishes to be 10～5000mJ/cm
2About, more wish 100～500mJ/cm
2About.In addition, irradiation time wishes to be about 1～1000nsec, more wishes to be about 10～100nsec.Energy density is high more, or irradiation time is longer, wear and tear easily, and energy density is low more, or irradiation time is shorter, can reduce owing to see through the irradiates light of peel ply 62 chip 34 is produced dysgenic possibility.
＜the five step 〉
Then, shown in Fig. 9 (c), at copy source substrate 60 with duplicate on the target base plate 66,, take off copy source substrate 60 from duplicating target base plate 66 by in the directive effect power that both sides are separated.Should duplicate the peel ply 62 of the chip 34 on the target base plate 66 by described the 4th step and peel off, so these chips that should duplicate 34 cut off with copy source substrate 60 from chip 34.The chip 34 that should duplicate in addition, is bonded on by adhesive layer 68 and duplicates on the target base plate 66.
In addition, in described the 4th step, wish that peel ply 62 produces fully and peel off, but the bond strength of the adhesive layer 68 of the chip 34 that should duplicate is than bigger based on the engaging force of remaining peel ply 62, the result, when copy source substrate 60 with duplicate target base plate 66 when separating, duplicate target base plate 66 1 sides if the chip 34 that should duplicate copies to reliably, the part of peel ply 62 is produced peel off.
Like this, be replicated duplicating by the adhesion of the peel ply that weakens by peeling off of peel ply, being applied to be replicated the relative power relation decision of adhesion of the adhesive layer of body of body.If based on peeling off fully of peel ply, even then a little less than the adhesion of adhesive layer, it also is possible being replicated duplicating of body, on the contrary, if insufficient based on peeling off of peel ply, but the adhesion height of adhesive layer is replicated body with regard to reproducible.
Shown in Fig. 9 (c),, chip 34 is copied to the desired location of duplicating on the target base plate 66 by peeling off copy source substrate 60 from duplicating target base plate 66.Then,, form wiring layer 14 shown in Figure 2, on wiring layer 14, form light emitting element layer 16 again, just formed organic EL display 100 by forming the insulating element that covers chip 34.
In addition, in copying to the chip 34 that duplicates on the target base plate 66, adhered to the remaining composition of peel ply 62 sometimes, wished to remove it fully.The method that is used for removing remaining peel ply 62 for example can from clean, method such as etching, ashing, grinding or the method that makes up them suitably select.
Equally, when in the surface attachment of the copy source substrate 60 that duplicates of the chip 34 that is through with peel ply 62 peel off remaining composition the time, can remove equally with the described target base plate 66 of duplicating.Thus, can utilize (circulation) to copy source substrate 60 again.Like this, by utilizing copy source substrate 60 again, the waste that can save manufacturing cost.This is effective especially when using the copy source substrate 60 that is made of high price material, exotic materials such as quartz glasss.
Like this, in the present embodiment, for the pad electrode that is arranged on chip 34 1 sides, be arranged on the pad electrode that duplicates target base plate 66 (having formed the substrate 10 of pixel a 101) side, form each pad electrode, make the highest of its surperficial jog promptly the height of high part become roughly the same.Thus, the contact-making surface in the time of making the duplicate object region duplication of chip 34 on substrate 10 is for the basic height that equates, so can guarantee good conducting state.
Below, the various electronic instruments of the organic EL display 100 that comprises present embodiment are described.Figure 11 is the figure of concrete example of the electronic instrument of the expression organic EL display 100 that can use present embodiment.
Figure 11 (a) is the application examples of mobile phone, and this mobile phone 230 has the organic EL display 100 of antenna part 231, audio output unit 232, sound input part 233, operating portion 234 and present embodiment.Like this, can be display unit of the present invention as the display part utilization.
Figure 11 (b) is the application examples of video camera, and this video camera 240 has the organic EL display 100 that is subjected to picture portion 241, operating portion 242, sound input part 243, present embodiment.Like this, can be display unit of the present invention as view-finder or display part utilization.
Figure 11 (c) is the application examples of portable personal computer, and this personal computer 250 has the organic EL display 100 of camera section 251, operating portion 252, present embodiment.Like this, can be display unit of the present invention as the display part utilization.
Figure 11 d (d) is the application examples of helmet-mounted display, and helmet-mounted display 260 has the organic EL display 100 of belt 261, optical system accommodation section 262 and present embodiment.Like this, can utilize display unit of the present invention as image demonstration source.
In addition, display unit 100 of the present invention is not limited to above-mentioned example, for example can be applied in the various electronic instruments such as the picture unit with Presentation Function, the view-finder of digital camera, portable TV, electronic notebook.
In addition, the present invention is not limited to the content of the above embodiments, in the scope of aim of the present invention, can do various changes.For example, in the above-described embodiment, example as electro-optical device of the present invention, the height that makes " the highest portion " that comprise among each pad electrode 56a～56j all is L1, and the height that makes " the highest portion " that comprise among each pad electrode 36a～36j all is L2, but about being configured to one group pad electrode relatively, forms each pad electrode, the treble total that makes the surface go up the jog that produces becomes certain substantially, also can obtain the effect same with described embodiment.
Figure 12 is that the treble part that each pad electrode that is configured to a group relatively is described adds up to the figure that becomes certain substantially situation.In Figure 12, dispose, form in pairs pad electrode 136a and pad electrode 156a, pad electrode 136b and pad electrode 156b respectively relatively.In addition, in Figure 12, omitted expression to the stacked film of the below that is formed on each pad electrode.
Be formed in each pad electrode that duplicates chip 134 1 sides, the treble height of pad electrode 156a is L11, and the treble height of pad electrode 156b is L12, both height differences.In addition, be formed in each pad electrode of substrate 110 1 sides, the treble height of pad electrode 136a is L21, and the treble height of pad electrode 136b is L22, both height differences.; if be conceived to the treble height of paired pad electrode; then formed each pad electrode, the total of the total of the highest the height of pad electrode 136a and pad electrode 156a and the highest the height of pad electrode 136b and pad electrode 156b is basic identical.
Like this, in the embodiment shown in fig. 12, formed each pad electrode, made about a paired assembly welding disc electrode, treble height total becomes certain respectively.By each pad electrode of such formation, also can guarantee more reliably to be electrically connected.
In addition, in the above-described embodiment, example as electro-optical device of the present invention, organic EL display has been described, but, range of application of the present invention is not limited thereto, and can be applied to the electro-optical device that uses other various electrooptic cells (for example, luminescence of plasma element, electrophoresis element, liquid crystal cell etc.) to constitute.In addition, range of application of the present invention is not limited to electro-optical device and manufacture method thereof, also can be widely used in the various devices that use reproduction technology to form.
Claims (14)
1. the manufacture method of a circuit board is characterized in that: comprising:
Duplicate chip and form step, it forms the chip that duplicates that comprises by stacked film formed thin film circuit and a plurality of first pad electrodes that use as being used to be connected the splicing ear of this thin film circuit and other circuit on first substrate;
Duplicate target base plate and form step, its formation comprise wiring be connected with this wiring and be formed on that described to duplicate described a plurality of first pad electrodes in the chip corresponding respectively and be configured in second substrate of a plurality of second pad electrodes in the duplicate object zone;
Copy step by described the duplicating in the described duplicate object zone of chip on described second substrate on described first substrate duplicated, is connected described thin film circuit on the described wiring, forms circuit board;
Described a plurality of first pad electrodes of configuration on whole of described one side of duplicating chip, each first pad electrode covering is present in the thin-film component or the film wiring of the described thin film circuit of formation below it and forms, and the treble height of the jog that will be generated from the teeth outwards therefrom in height is formed in each pad electrode identical by forming the Height Adjustment film.
2. the manufacture method of circuit board according to claim 1 is characterized in that:
Form in the step in the described target base plate of duplicating, form described a plurality of second pad electrode, make its covering be present in the described wiring of its below, the treble height of the jog that generates on the surface is identical in each second pad electrode.
3. the manufacture method of circuit board according to claim 2 is characterized in that:
Described a plurality of second pad electrode is adjusted film by additional height when forming described wiring, adjust the treble height of described jog.
4. according to the manufacture method of any described circuit board in the claim 1～3, it is characterized in that:
Described a plurality of first pad electrode with described the highest the corresponding zone of first pad electrode in the membrane structure of described stacked film identical respectively.
5. according to the manufacture method of any described circuit board in the claim 1～3, it is characterized in that:
The described chip that duplicates forms step and comprises: form and be present in described first substrate and described duplicating between the chip, have by paying of energy and produce state variation, the step of the peel ply of the character that weakens with the described fixation degree that duplicates chip.
6. the manufacture method of circuit board according to claim 4 is characterized in that:
The described chip that duplicates forms step and comprises: form and be present in described first substrate and described duplicating between the chip, have by paying of energy and produce state variation, the step of the peel ply of the character that weakens with the described fixation degree that duplicates chip.
7. the manufacture method of a circuit board is characterized in that: comprising:
On first substrate, form the chip that duplicates that duplicates chip that comprises by stacked film formed thin film circuit and a plurality of first pad electrodes that use as being used to be connected the splicing ear of this thin film circuit and other circuit and form step;
Formation comprise wiring be connected with this wiring and be formed on that described to duplicate described a plurality of first pad electrodes in the chip corresponding respectively and the target base plate of duplicating that be configured in second substrate of a plurality of second pad electrodes in the duplicate object zone forms step;
By described the duplicating in the described duplicate object zone of chip on described second substrate on described first substrate duplicated, described thin film circuit is connected on the described wiring, form the copy step of circuit board;
Described a plurality of first pad electrodes of configuration on whole of described one side of duplicating chip, each first pad electrode cover the thin-film component or the film wiring of the described thin film circuit of formation that is present in its below;
The configuration of corresponding described a plurality of first pad electrodes of described a plurality of second pad electrode is configured in all zones that spread all over described duplicate object zone, and each second pad electrode covers the described wiring that is present in its below;
Form described first pad electrode and second pad electrode, make the treble height of the jog that generates on the surface separately of first and second pad electrodes that are configured as a group relatively add up to by forming the Height Adjustment film in height certain.
8. the manufacture method of circuit board according to claim 7 is characterized in that:
Described copy step comprises: describedly duplicate described first pad electrode in the chip and be formed on the step that forms adhesive layer between described second pad electrode on described second substrate being formed on.
9. the manufacture method of circuit board according to claim 7 is characterized in that:
The described chip that duplicates forms step and comprises: form and be present in described first substrate and described duplicating between the chip, have by paying of energy and produce state variation, the step of the peel ply of the character that weakens with the described fixation degree that duplicates chip.
10. one kind is duplicated chip, be on first substrate, to form the replicator comprise by stacked film formed thin film circuit at least, to be used to connect a plurality of pad electrodes of this thin film circuit and other circuit, and copy to the chip that duplicates that has formed on second substrate that connects up from this first substrate, it is characterized in that:
The described a plurality of pad electrodes of configuration on whole of described one side of duplicating chip, each pad electrode covering is present in the thin-film component or the film wiring of the described thin film circuit of formation below it and forms, and the treble height of the jog that will be generated from the teeth outwards therefrom is formed in each pad electrode identical by forming the Height Adjustment film.
11. a copy source substrate is characterized in that, a plurality of claims 10 are described duplicates chip and constitutes by forming on substrate.
12. copy source substrate according to claim 11 is characterized in that:
Described copy source substrate also comprises: be present in described substrate and described duplicating between the chip, have by paying of energy and produce state variation, the peel ply of the character that weakens with the described fixation degree that duplicates chip.
13. an electro-optical device, it uses according to any circuit board that described manufacture method is made in the claim 1～9.
14. an electronic instrument, it uses the described electro-optical device of claim 13 as display part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101007137A CN1293602C (en) | 2002-10-08 | 2003-10-08 | Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002295134 | 2002-10-08 | ||
| CNB2003101007137A CN1293602C (en) | 2002-10-08 | 2003-10-08 | Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device |
Publications (2)
| Publication Number | Publication Date |
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| CN1497664A CN1497664A (en) | 2004-05-19 |
| CN1293602C true CN1293602C (en) | 2007-01-03 |
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| CNB2003101007137A Expired - Lifetime CN1293602C (en) | 2002-10-08 | 2003-10-08 | Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106158848B (en) * | 2015-04-07 | 2019-03-22 | 群创光电股份有限公司 | Display panel |
| KR102147336B1 (en) * | 2018-01-23 | 2020-08-24 | 동우 화인켐 주식회사 | Film antenna-circuit connection structure and display device including the same |
| CN111129356A (en) * | 2018-11-01 | 2020-05-08 | 陕西坤同半导体科技有限公司 | Method for preparing flexible substrate, flexible substrate and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4808983A (en) * | 1984-02-01 | 1989-02-28 | The Secretary Of State For Defence In Her Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Flat-panel display and a process for its manufacture |
| CN1199507A (en) * | 1996-08-27 | 1998-11-18 | 精工爱普生株式会社 | Separating method, method for transferring thin film device, thin film device, thin film IC device and liquid crystal display device mfg by using transferring method |
| US5866951A (en) * | 1990-10-12 | 1999-02-02 | Robert Bosch Gmbh | Hybrid circuit with an electrically conductive adhesive |
| JP2002261335A (en) * | 2000-07-18 | 2002-09-13 | Sony Corp | Image display device and manufacturing method therefor |
-
2003
- 2003-10-08 CN CNB2003101007137A patent/CN1293602C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4808983A (en) * | 1984-02-01 | 1989-02-28 | The Secretary Of State For Defence In Her Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Flat-panel display and a process for its manufacture |
| US5866951A (en) * | 1990-10-12 | 1999-02-02 | Robert Bosch Gmbh | Hybrid circuit with an electrically conductive adhesive |
| CN1199507A (en) * | 1996-08-27 | 1998-11-18 | 精工爱普生株式会社 | Separating method, method for transferring thin film device, thin film device, thin film IC device and liquid crystal display device mfg by using transferring method |
| JP2002261335A (en) * | 2000-07-18 | 2002-09-13 | Sony Corp | Image display device and manufacturing method therefor |
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| CN1497664A (en) | 2004-05-19 |
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