CN1252837C - 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法 - Google Patents
在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法 Download PDFInfo
- Publication number
- CN1252837C CN1252837C CNB018087345A CN01808734A CN1252837C CN 1252837 C CN1252837 C CN 1252837C CN B018087345 A CNB018087345 A CN B018087345A CN 01808734 A CN01808734 A CN 01808734A CN 1252837 C CN1252837 C CN 1252837C
- Authority
- CN
- China
- Prior art keywords
- layer
- sequence
- epitaxial loayer
- chip
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
本发明涉及两种发光二极管芯片。一种芯片具有一个导电的和辐射能穿透的衬底,外延层序列(3)在其背离衬底(2)的p型区(9)上基本上整个面积设置了一层反射的、可压焊的p型接触层(6),衬底(2)在其背离外延层序列(3)的主面(10)上设置了一层金属化接触(7),该接触只覆盖该主面(10)的一部分;从芯片(1)的光输出是通过衬底(2)的主面(10)的自由区和通过芯片侧面(14)来实现的。另一种发光二极管芯片则只具有外延层,p型导电外延层(5)在其背离n型导电外延层(4)的主面(9)上基本上整个面积设置了一层反射的、可压焊的p型接触层(6),而n型导电外延层(4)则在其背离p型导电外延层(5)的主面(8)上设置了一层n型接触层(7),该接触层只覆盖该主面的一部分;从芯片(1)的光输出是通过n型导电外延层(4)的主面(8)的自由区和通过芯片侧面(14)来实现的。
Description
本发明涉及权利要求1或4的前序部分所述的一种发光二极管芯片以及用GaN基板上的发光二极管芯片制造发光二极管元件的一种方法。
在GaN基板上制造发光二极管芯片时存在的基本问题是,p型掺杂的层尤其是p型掺杂的GaN层或AlGaN层可达到的电导率满足不了这样的要求,即:在用别的材料系统制成常规发光二极管芯片的情况下,为了达到尽可能高的辐射输出,一般用的端面接触只覆盖芯片正面的很小一部分,以至电流不能扩展到芯片的整个横断面。
在一个导电的衬底上生长p型导电层,从而可在p型导电层的整个横断面上注入电流,导致了不可接受的经济后果。其原因在于:制造导电的晶格匹配的衬底(例如GaN衬底),在生长基于GaN的各层时需要付出高昂的技术费用;在对未掺杂的和n型掺杂的GaN连接不适合的晶格匹配的衬底上生长p型掺杂的基于GaN的各层时,导致对发光二极管不足的差的晶体质量。
在解决上述问题的一个已知的方案中,在背离衬底的p型导电层的一侧上设置了一层辐射能穿透的整个面积的接触层或附加的一层导电良好的电流扩展层,该层设置有压焊接触。
但上述第一方案的缺点是,辐射的相当大的一部分在接触层被吸收。而在上述第二方案时,则需要一道附加的工序,从而导致制造费用的增加。
日本专利摘要JP 10-150 220A公开了一种发光半导体器件,这种器件在一个n型GaN衬底上依次设置了一层n型GaN半导体层、一层发光层和一层p型GaN半导体层。在p型GaN半导体层的表面上布置了一个基本上完全覆盖了该层的p型电极。
本发明的目的是:首先开发一种具有改善电流扩展的上述发光二极管芯片,这种芯片的附加制造费用很少;其次,提出用这种芯片制造发光二极管元件的一种方法。
上述的第一目的是通过权利要求1或权利要求4的特征部分所述的一种发光二极管芯片来实现的,有利的各项改进可从各项从属权利要求中得知。本发明发光二极管芯片的优选制造方法是权利要求9至14的内容。权利要求15给出了一个优选的发光二极管元件。
根据本发明的一种发光二极管芯片,衬底是导电的。在该衬底上,首先设置一个外延层序列的n型导电层,在这个外延层序列上设置外延层序列的p型导电层,然后设置一层横向整个面积反射的、可压焊的p型接触层。该衬底在其背离外延层序列的主面上设置有金属化接触,该接触只覆盖该主面的一部分。从芯片的光输出是通过衬底主面的自由区和通过芯片侧面来实现的。
该衬底在这里优选起窗口层的作用,该层改进了芯片内产生的辐射的输出。为了衬底厚度的最佳化,该衬底最好在生长外延层序列后例如用磨削和/或腐蚀进行减薄。
根据本发明的另一种发光二极管芯片,该芯片只具有外延层。为此,在外延层序列的外延生长后要把生长衬底去掉。p型导电外延层在其背离n型导电外延层的主面上基本上整个面积都设置了一层反射的、可压焊的p型接触层,在离p型导电外延层的n型导电外延层的主面上设置一层只覆盖该主面一部分的n型接触层。从芯片的光输出是通过n型导电外延层的主面自由区和通过芯片侧面来实现的。
在这种情况中,该生长衬底既可以是电绝缘的又可以是辐射不能穿透的并因此而可按有利的方式单独地选择最佳的生长条件。
这种所谓的薄膜发光二极管芯片的独特优点是,特别是由于具有折射率跃变的界面的数目减少,在芯片中的辐射吸收减少到理想的程度并改善了芯片的辐射输出。
本发明两种发光二极管芯片的独特优点是:可把芯片产生损耗热的区域(特别是p型掺杂层和pn结)直接放在散热器附近;外延层序列实际上直接与一个散热器进行连接。这样,芯片可很有效地进行冷却,从而提高输出辐射的稳定性。同样也提高了芯片的效率。
由于整个面积的接通,本发明的两种发光二极管芯片以有利的方式降低了正向电压。
在用本发明发光二极管芯片时,p型接触层具有一层设置p型区上的透明第一层和一层设置在该透明层上的反射第二层。这样,接触层就可按简单的方式既可在其电性能又可在其反射性能方面达到最佳化。
上述第一层和第二层的优选材料为Pt和/或Pd或Ag、Au和/或Al。但反射层也可作为介质反射镜构成。
在另一种优选方案中,p型接触层具有一种PtAg合金和/或PdAg合金。
在又一种优选的结构型式中,由层序列形成的半导体的整个外露表面或其中的一部分区域进行了打毛。通过这种打毛使输出面的总反射受到干扰,从而有利于进一步提高光的输出率。
在用本发明发光二极管芯片制造发光二极管元件的本发明方法中,具有p型区的芯片安装在电连接部分尤其是芯片引线架的一个芯片装配面上。
在本发明的一个特别优选的方案中,通过对层序列形成的半导体本体的打毛继续进行制造处理,其中,半导体本体的整个外露表面或其部分区域被打毛。对发光效率的提高特别有效的打毛是通过对半导体本体进行腐蚀或用喷砂方法来实现的。
本发明的其他有利结构可从下面结合附图1a至5所述的实施例中得知。附图表示:
图1a 第一实施例的一个示意断面图;
图1b 优选的p型接触层的示意图;
图2 第二实施例的一个示意断面图;
图3a至3c 图1a实施例的制造工艺过程的示意图;
图4a至4e 图2实施例的制造工艺过程的示意图;
图5 本发明发光二极管芯片的另一个实施例的示意断面图。
在不同实施例的附图中,相同或作用相同的部分分别用相同或相似的附图标记表示。
在图1a的发光二极管芯片1中,在一个SiC衬底2上设置了一个发光的外延层序列3。该外延层序列例如具有一层n型导电掺杂的GaN或AlGaN外延层4和一层p型导电掺杂的GaN或AlGaN外延层5。同样,例如一个基于GaN的外延层序列3可具有一个双异质结构、一个单量子井(SQW)结构(Einfach-Quantenwell-Struktur)或一个带一层或多层来掺杂层19的多量子井(MQW)结构,例如用InGaN或InGaAlN制成。
SiC衬底2是导电的并对外延层序列3发出的辐射是可穿透的。
在其背离SiC衬底2的p型区9上,在外延层序列3上基本上整个面积设置了一层反射的、可压焊的p型接触层6,该接触层例如主要用Ag、用一种PtAg合金和/或用一种PdAg合金制成。
但如图1b示意图所示,p型接触层6也可用辐射能穿透的第一层15和反射的第二层16组成。第一层15例如主要用Pt和/或Pd制成,而第二层16则例如主要用Ag、Au和/或Al或一层介电的反射层制成。
在其背离外延层序列3的主面10上,SiC衬底2设置了金属化接触7,该接触只覆盖该主面10的一部分并作为丝焊法键合用的焊盘构成。金属化接触7例如由一层设置在SiC衬底2上的Ni层和紧接着的一层Au层组成。
芯片1用模片结合法用其p型区即用p型接触层6装配到芯片面性引线架11的芯片装配面12上。n型金属化接触7通过一根压焊丝17与芯片引线架11的连接部分18连接。
芯片1的光输出是通过SiC衬底2的主面10的自由区域和通过芯片侧面14来实现的。
芯片1在外延层序列3生长后可选择地具有一个减薄的SiC衬底2(在图1a中用虚线表示)。
图2所示实施例与图1a的区别在于,芯片1只具有外延序列3的外延层而没有衬底层。在外延层生长后,衬底层例如用腐蚀和/或磨削去掉。关于这种所谓薄膜发光二极管芯片的优点可参看本说明书的综述部分。另一方面,外延层序列3具有一个双异质结构、一个单量子井结构或一个带一或多层未掺杂层19的多量子井结构,例如用InGaN或InGaAlN制成。这里还举例示意示出了一个发光二极管封装21。
图3a至3c表示用图1a的发光二极管芯片1制造发光二极管元件的示意工艺过程:首先在SiC衬底2上生长发射光的外延层序列3(图3a),然后在外延层序列3的p型区9上整个面积设置可压焊的p型接触层6和在衬底2离外延层序列3的主面10的部分区域设置n型接触层7(图3b)。这些工艺过程全在所谓的复合晶片内进行,从而可同时制作许多芯片。
在上述工艺过程结束后,将复合晶片分割成单个芯片1。然后将这些单个芯片借助于焊接分别用可压焊的p型接触层6安装在一个芯片引线架11的芯片装配面12上(图3c)。
图4a至4e所示的用图2发光二极管芯片1制造发光二极管元件的方法与图3a至3c所示方法的主要区别在于,在外延层序列3生长后和p型接触层6设置之前或之后去掉了衬底2(图4c)。在这种情况中,衬底2既可以是电绝缘的又可以是辐射穿不透的,因而可按有利方式单独地选择最佳的生长条件。
在去掉衬底2后,在进行类似于上面结合图3c所述的装配步骤之前(图4e),在外延层序列3的n型区13上设置n型金属化接触7(图4d)。
图5所示的实施例具有许多叠层式布置的不同的半导体层101,这些半导体层用GaN或其三元或四元化合物制成。在运行过程中,在这些层的里面构成一个产生辐射105的活性区102。
层叠被第一个主面103和第二个主面104限定。产生的辐射105主要通过第一主面103输出到邻域中。
如上所述,在第二主面104上设置了一层反射的可压焊的p型接触层106。在发射侧上的半导体通过接触面112接通,而反射器侧的半导体则通过p型接触层106接通。反射器侧的接通例如可这样来实现,半导体本体在反射器侧放置在一个金属体上,该金属体既作为载体又作为电流引线使用。
反射器106使在第一主面103上输出时反射到半导体本体的辐射105的一部分重新在第一主面103的方向内反射,所以总的来说,增加了由第一主面103输出的辐射量。这种辐射量的增加是这样实现的,该元件作为薄膜元件构成而没有吸收辐射的衬底,且反射器106直接设置在GaN半导体本体上。
在这种情况下,半导体本体的表面具有打毛层107,打毛层107引起辐射105在第一主面103上散射,从而使第一主面103上的总反射受到干扰。这种散射在很大程度上阻止了产生的辐射通过连续的相同的反射象光导体那样在两个主面103和104或反射器106之间通导,而不离开该半导体本体。所以通过打毛层107进一步增加了发光效率。
当然,本发明不受上述实施例的限制。确切地说,本发明特别适用于所有这类位于离一个生长衬底较远的外延层导电率不够的发光二极管芯片。
Claims (19)
1.发光二极管芯片(1),具有一个发光的外延层序列(3),该外延层序列具有带n型导电区(8)的GaN基体上的一层n型导电外延层(4)和一层p型导电外延层(5)并设置在一个导电的衬底(2)上,该衬底(2)对该外延层序列(3)发出的辐射是可穿透的,外延层序列(3)在其背离衬底(2)的p型区(9)上基本上整个面积设置了一层反射的、可压焊的p型接触层(6),衬底(2)在其背离外延层序列(3)的主面(10)上设置了金属化接触(7),该接触只覆盖该主面(10)的一部分,从芯片(1)的光输出是通过衬底(2)的主面(10)的自由区和通过芯片侧面(14)来实现的,
其特征为,
p型接触层(6)具有一层设置在P型区(9)上的透光的第一层(15)和一层设置在该第一层上的反射的第二层(16)。
2.按权利要求1的发光二极管芯片(1),
其特征为,
在设置外延层序列(3)后,设置一层减薄的衬底(2)。
3.按权利要求1或2的发光二极管芯片(1),
其特征为,
作为导电衬底(2)采用一个碳化硅衬底。
4.按权利要求1的发光二极管芯片(1),
其特征为,
第一层(15)主要具有Pt和/或Pd,而第二层(16)则主要具有Ag、Au和/或Al或作为介质反射镜构成。
5.按权利要求1的发光二极管芯片(1),
其特征为,
层序列(3、101)的整个外露表面或其一部分被打毛。
6.在GaN基体上具有一个发光外延层序列(3)的发光二极管芯片(1),该外延层序列具有一层n型导电外延层(4)和一层p型导电外延层(5),其特征为:
在外延层序列(3)的外延生长后,芯片(1)借助于一个生长衬底的去掉而只具有外延层,p型导电外延层(5)在其背离n型导电外延层(4)的主面(9)上基本上整个面积设置了一层反射的、可压焊的p型接触层(6),而n型导电外延层(4)则在其背离p型导电外延层(5)的主面(8)上设置了一层n型接触层(7),该接触层只覆盖该主面的一部分;从芯片(1)的光输出是通过n型导电外延层(4)的主面(8)的自由区和通过芯片侧面(14)来实现的,其中p型接触层(6)具有一层设置在p型区(9)上的透光的第一层(15)和一层设置在该第一层上的反射的第二层(16)。
7.按权利要求6的发光二极管芯片,
其特征为,
第一层(15)主要具有Pt和/或Pd,而第二层(16)则主要具有Ag、Au和/或Al或作为介质反射镜构成。
8.按权利要求6的发光二极管芯片,
其特征为,
p型接触层(6)具有一种PtAg合金和/或PdAg合金。
9.按前述权利要求6至8任一项的发光二极管芯片,
其特征为,
层序列(3、101)的整个外露表面或其一部分被打毛。
10.用GaN基板上的发光二极管芯片(1)制造发光二极管元件的方法,其工艺步骤是:
a)在一个衬底(2)上外延生长一个发光的外延层序列(3),该衬底对从外延层序列(3)发出的辐射是可以穿透的,外延层序列(3)的一个n型区(8)面向该衬底(2),而外延层序列(3)的一个p型区(9)则背离衬底(2);
b)通过在p型区(9)上设置透光的第一层(15)和在第一层(15)上设置反射的第二层(16)而在外延层序列(3)的p型区(9)上整个面积设置一层可压焊的p型接触层(6);
c)在背离外延层序列(3)的衬底(2)的一个主面(10)的一部分区域上设置n型接触层(7);
d)用朝芯片装配面的可压焊的p型接触层(6)把芯片(1)安装到一个发光二极管封装的或一个发光二极管封装内的一根印制导线的或一个电引线架(11)的芯片装配面(12)上。
11.按权利要求10的方法,
其特征为,
在设置n型接触层(7)之前,衬底(2)被减薄。
12.按权利要求10或11的方法,
其特征为,
层序列(3,101)整个或部分区域被打毛。
13.按权利要求12的方法,
其特征为,
层序列(3,101)通过腐蚀打毛。
14.按权利要求12的方法,
其特征为,
层序列(3,101)通过喷砂方法打毛。
15.用GaN底板上的发光二极管芯片(1)制造发光二极管元件的方法,其工艺步骤是:
a)在一个衬底(2)上这样外延生长一个发光的外延层序列(3),使外延层序列(3)的一个n型区(8)面向衬底(2),而该外延层序列的一个p型区(9)则背离衬底(3);
b)通过在p型区(9)上设置透光的第一层(15)和在第一层(15)上设置反射的第二层(16)而在外延层序列(3)的p型区(9)上整个面积设置一层可压焊的p型接触层(6);
c)去掉外延层序列(3)的衬底(2);
d)把一层n型接触层(7)设置到外延层序列(3)的在步骤c)露出的主面(13)的一部分区域上;
e)用朝芯片装配面的可压焊的p型接触层(6)把芯片(1)安装到一个发光二极管封装的或一个发光二极管封装内的一根印制导线的或一个电引线架(11)的芯片装配面(12)上。
16.按权利要求15的方法,
其特征为,
层序列(3,101)整个或部分区域被打毛。
17.按权利要求16的方法,
其特征为,
层序列(3,101)通过腐蚀打毛。
18.按权利要求16的方法,
其特征为,
层序列(3,101)通过喷砂方法打毛。
19.具有权利要求1至9任一项发光二极管芯片的发光二极管元件,其芯片(1)被安装在一个发光二极管封装(21)的芯片装配面(12)上,特别是一个芯片引线架(11)上或发光二极管封装的印制导线的装配面上,
其特征为,
反射的金属化接触(6)放在芯片装配面(12)上。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10020464.3 | 2000-04-26 | ||
DE10020464A DE10020464A1 (de) | 2000-04-26 | 2000-04-26 | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
DE10026255.4 | 2000-05-26 | ||
DE10026255A DE10026255A1 (de) | 2000-04-26 | 2000-05-26 | Lumineszenzdiosdenchip auf der Basis von GaN und Verfahren zum Herstellen eines Lumineszenzdiodenbauelements mit einem Lumineszenzdiodenchip auf der Basis von GaN |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1439176A CN1439176A (zh) | 2003-08-27 |
CN1252837C true CN1252837C (zh) | 2006-04-19 |
Family
ID=26005475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018087345A Expired - Lifetime CN1252837C (zh) | 2000-04-26 | 2001-03-16 | 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7319247B2 (zh) |
EP (1) | EP1277241B1 (zh) |
JP (1) | JP2003533030A (zh) |
CN (1) | CN1252837C (zh) |
TW (1) | TW522575B (zh) |
WO (1) | WO2001084640A1 (zh) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10019665A1 (de) * | 2000-04-19 | 2001-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und Verfahren zu dessen Herstellung |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
WO2001084640A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS |
US6878563B2 (en) * | 2000-04-26 | 2005-04-12 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
DE10131698A1 (de) * | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
DE10234977A1 (de) * | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
KR101148332B1 (ko) | 2003-04-30 | 2012-05-25 | 크리, 인코포레이티드 | 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지 |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
TW200505042A (en) * | 2003-07-17 | 2005-02-01 | South Epitaxy Corp | LED device |
DE102004036295A1 (de) * | 2003-07-29 | 2005-03-03 | GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View | Flip-Chip-Leuchtdioden-Bauelemente mit Substraten, deren Dicke verringert wurde oder die entfernt wurden |
TWI228272B (en) | 2003-09-19 | 2005-02-21 | Tinggi Technologies Pte Ltd | Fabrication of semiconductor devices |
JP4881003B2 (ja) * | 2003-09-26 | 2012-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射を発する薄膜半導体チップ |
US6972438B2 (en) * | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
ATE533187T1 (de) * | 2004-03-15 | 2011-11-15 | Tinggi Technologies Private Ltd | Fabrikation von halbleiterbauelementen |
KR20070028364A (ko) | 2004-04-07 | 2007-03-12 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 발광 다이오드상의 반사층 제조 |
DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
DE102005013894B4 (de) | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
DE102004045947A1 (de) * | 2004-06-30 | 2006-01-19 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US8728937B2 (en) * | 2004-07-30 | 2014-05-20 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor chips using thin film technology |
WO2006012838A2 (de) * | 2004-07-30 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik |
US20060054919A1 (en) * | 2004-08-27 | 2006-03-16 | Kyocera Corporation | Light-emitting element, method for manufacturing the same and lighting equipment using the same |
JP5038147B2 (ja) * | 2004-11-18 | 2012-10-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光体、及び前記発光体を製造する方法 |
CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电(江西)有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
KR101166922B1 (ko) * | 2005-05-27 | 2012-07-19 | 엘지이노텍 주식회사 | 발광 다이오드의 제조 방법 |
KR101154744B1 (ko) * | 2005-08-01 | 2012-06-08 | 엘지이노텍 주식회사 | 질화물 발광 소자 및 그 제조 방법 |
US7875474B2 (en) | 2005-09-06 | 2011-01-25 | Show A Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and production method thereof |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
US7772604B2 (en) * | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
EP2011164B1 (en) | 2006-04-24 | 2018-08-29 | Cree, Inc. | Side-view surface mount white led |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US8087960B2 (en) * | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
DE102007057756B4 (de) | 2007-11-30 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
JP2011512037A (ja) * | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP2010147446A (ja) | 2008-12-22 | 2010-07-01 | Panasonic Electric Works Co Ltd | 発光装置 |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8502465B2 (en) * | 2009-09-18 | 2013-08-06 | Soraa, Inc. | Power light emitting diode and method with current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
JP2010050487A (ja) * | 2009-11-24 | 2010-03-04 | Sharp Corp | 窒化物系半導体発光素子 |
KR20110113822A (ko) | 2010-04-12 | 2011-10-19 | 서울옵토디바이스주식회사 | 결정 성장용 기판 어셈블리 및 이를 이용한 발광소자의 제조방법 |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
US8236584B1 (en) * | 2011-02-11 | 2012-08-07 | Tsmc Solid State Lighting Ltd. | Method of forming a light emitting diode emitter substrate with highly reflective metal bonding |
DE102011016308A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
US8811719B2 (en) | 2011-04-29 | 2014-08-19 | Microsoft Corporation | Inferring spatial object descriptions from spatial gestures |
EP2791983A4 (en) | 2011-12-12 | 2015-08-12 | Sensor Electronic Tech Inc | REFLECTIVE CONTACT ULTRAVIOLET |
US9818912B2 (en) | 2011-12-12 | 2017-11-14 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
US10186458B2 (en) * | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9287449B2 (en) | 2013-01-09 | 2016-03-15 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US10276749B2 (en) | 2013-01-09 | 2019-04-30 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US9768357B2 (en) | 2013-01-09 | 2017-09-19 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
CN111063771A (zh) * | 2020-01-06 | 2020-04-24 | 江西圆融光电科技有限公司 | Led芯片的制备方法及led芯片 |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2716143A1 (de) * | 1977-04-12 | 1978-10-19 | Siemens Ag | Lichtemittierendes halbleiterbauelement |
FR2423869A1 (fr) * | 1978-04-21 | 1979-11-16 | Radiotechnique Compelec | Dispositif semiconducteur electroluminescent a recyclage de photons |
US4232440A (en) * | 1979-02-27 | 1980-11-11 | Bell Telephone Laboratories, Incorporated | Contact structure for light emitting device |
DE3041358A1 (de) | 1980-11-03 | 1982-06-09 | Siemens AG, 1000 Berlin und 8000 München | Lichtreflektirender ohmscher kontakt fuer bauelemente |
US4448636A (en) * | 1982-06-02 | 1984-05-15 | Texas Instruments Incorporated | Laser assisted lift-off |
US5373171A (en) | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
US4982538A (en) * | 1987-08-07 | 1991-01-08 | Horstketter Eugene A | Concrete panels, concrete decks, parts thereof, and apparatus and methods for their fabrication and use |
JPH067594B2 (ja) | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
US4912532A (en) | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
JP2953468B2 (ja) | 1989-06-21 | 1999-09-27 | 三菱化学株式会社 | 化合物半導体装置及びその表面処理加工方法 |
DE4038216A1 (de) | 1990-01-20 | 1991-07-25 | Telefunken Electronic Gmbh | Verfahren zur herstellung von leuchtdioden |
US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
JPH04132274A (ja) * | 1990-09-21 | 1992-05-06 | Eastman Kodak Japan Kk | 発光ダイオード |
US5102821A (en) * | 1990-12-20 | 1992-04-07 | Texas Instruments Incorporated | SOI/semiconductor heterostructure fabrication by wafer bonding of polysilicon to titanium |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
DE4305296C3 (de) | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5965698A (en) * | 1993-04-23 | 1999-10-12 | Virginia Commonwealth University | Polypeptides that include conformation-constraining groups which flank a protein--protein interaction site |
US5385632A (en) * | 1993-06-25 | 1995-01-31 | At&T Laboratories | Method for manufacturing integrated semiconductor devices |
US5753134A (en) * | 1994-01-04 | 1998-05-19 | Siemens Aktiengesellschaft | Method for producing a layer with reduced mechanical stresses |
JP3344056B2 (ja) | 1994-02-08 | 2002-11-11 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP3293996B2 (ja) * | 1994-03-15 | 2002-06-17 | 株式会社東芝 | 半導体装置 |
JP2669368B2 (ja) * | 1994-03-16 | 1997-10-27 | 日本電気株式会社 | Si基板上化合物半導体積層構造の製造方法 |
JP3717196B2 (ja) * | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | 発光素子 |
JP3974667B2 (ja) | 1994-08-22 | 2007-09-12 | ローム株式会社 | 半導体発光素子の製法 |
JP3561536B2 (ja) | 1994-08-23 | 2004-09-02 | 三洋電機株式会社 | 半導体発光素子 |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH08250687A (ja) * | 1995-03-08 | 1996-09-27 | Komatsu Electron Metals Co Ltd | Soi基板の製造方法およびsoi基板 |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
JPH08307001A (ja) * | 1995-04-28 | 1996-11-22 | Mitsubishi Electric Corp | 半導体レ−ザダイオ−ドおよびその製造方法 |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JPH08322116A (ja) | 1995-05-25 | 1996-12-03 | Nissin Electric Co Ltd | 柱上ガス開閉器 |
US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
JP3905935B2 (ja) * | 1995-09-01 | 2007-04-18 | 株式会社東芝 | 半導体素子及び半導体素子の製造方法 |
JP3409958B2 (ja) * | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
EP0817283A1 (en) | 1996-01-19 | 1998-01-07 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
JP3164016B2 (ja) | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
JPH11510968A (ja) * | 1996-06-11 | 1999-09-21 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 紫外発光ダイオード及び紫外励起可視光放射蛍光体を含む可視発光ディスプレイ及び該デバイスの製造方法 |
US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JP3179346B2 (ja) * | 1996-08-27 | 2001-06-25 | 松下電子工業株式会社 | 窒化ガリウム結晶の製造方法 |
DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
JPH10150220A (ja) * | 1996-11-15 | 1998-06-02 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JPH10209494A (ja) | 1997-01-24 | 1998-08-07 | Rohm Co Ltd | 半導体発光素子 |
US5880491A (en) * | 1997-01-31 | 1999-03-09 | The United States Of America As Represented By The Secretary Of The Air Force | SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices |
JP3679914B2 (ja) * | 1997-02-12 | 2005-08-03 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
TW353202B (en) | 1997-02-28 | 1999-02-21 | Hewlett Packard Co | Scribe and break of hard-to-scribe materials |
US6069394A (en) | 1997-04-09 | 2000-05-30 | Matsushita Electronics Corporation | Semiconductor substrate, semiconductor device and method of manufacturing the same |
DE19820777C2 (de) * | 1997-05-08 | 2003-06-18 | Showa Denko Kk | Elektrode für lichtemittierende Halbleitervorrichtungen |
US5955756A (en) * | 1997-05-29 | 1999-09-21 | International Business Machines Corporation | Trench separator for self-defining discontinuous film |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
JP4119501B2 (ja) | 1997-07-10 | 2008-07-16 | ローム株式会社 | 半導体発光素子 |
JPH11154774A (ja) | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
JP3914615B2 (ja) | 1997-08-19 | 2007-05-16 | 住友電気工業株式会社 | 半導体発光素子及びその製造方法 |
TW393785B (en) | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
DE19741442A1 (de) | 1997-09-19 | 1999-04-01 | Siemens Ag | Verfahren zum Herstellen einer Halbleitervorrichtung |
DE19838810B4 (de) | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
EP0905797B1 (de) | 1997-09-29 | 2010-02-10 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
JP3130292B2 (ja) * | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | 半導体発光装置及びその製造方法 |
JP3631359B2 (ja) | 1997-11-14 | 2005-03-23 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US6347101B1 (en) * | 1998-04-16 | 2002-02-12 | 3D Systems, Inc. | Laser with absorption optimized pumping of a gain medium |
DE19921987B4 (de) | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
JP3201475B2 (ja) * | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6328796B1 (en) * | 1999-02-01 | 2001-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Single-crystal material on non-single-crystalline substrate |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
ATE200944T1 (de) * | 1999-02-11 | 2001-05-15 | Avalon Photonics Ltd | Halbleiterlaser und herstellungsverfahren |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
JP3675234B2 (ja) * | 1999-06-28 | 2005-07-27 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
JP2001053336A (ja) * | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
DE10008583A1 (de) * | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips |
JP4060511B2 (ja) * | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
WO2001084640A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
US6878563B2 (en) * | 2000-04-26 | 2005-04-12 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
DE10042947A1 (de) * | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
US6518079B2 (en) * | 2000-12-20 | 2003-02-11 | Lumileds Lighting, U.S., Llc | Separation method for gallium nitride devices on lattice-mismatched substrates |
US6446571B1 (en) * | 2001-01-25 | 2002-09-10 | Printmark Industries, Inc. | Light reflecting warning kit for vehicles |
US6468824B2 (en) * | 2001-03-22 | 2002-10-22 | Uni Light Technology Inc. | Method for forming a semiconductor device having a metallic substrate |
US6562701B2 (en) * | 2001-03-23 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing nitride semiconductor substrate |
US6945444B2 (en) * | 2001-04-03 | 2005-09-20 | Tyco Healthcare Group, Lp | Surgical stapling device for performing circular anastomoses |
US6861130B2 (en) * | 2001-11-02 | 2005-03-01 | General Electric Company | Sintered polycrystalline gallium nitride and its production |
US6881261B2 (en) * | 2001-11-13 | 2005-04-19 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
US6617261B2 (en) | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
US6869820B2 (en) * | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
JP4217093B2 (ja) * | 2003-03-27 | 2009-01-28 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
-
2001
- 2001-03-16 WO PCT/DE2001/001003 patent/WO2001084640A1/de active Application Filing
- 2001-03-16 CN CNB018087345A patent/CN1252837C/zh not_active Expired - Lifetime
- 2001-03-16 EP EP01931364.2A patent/EP1277241B1/de not_active Expired - Lifetime
- 2001-03-16 JP JP2001581353A patent/JP2003533030A/ja active Pending
- 2001-03-16 US US10/258,340 patent/US7319247B2/en not_active Expired - Lifetime
- 2001-04-25 TW TW090109884A patent/TW522575B/zh not_active IP Right Cessation
-
2006
- 2006-08-23 US US11/508,504 patent/US20070012944A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070012944A1 (en) | 2007-01-18 |
TW522575B (en) | 2003-03-01 |
US20040026709A1 (en) | 2004-02-12 |
JP2003533030A (ja) | 2003-11-05 |
WO2001084640A1 (de) | 2001-11-08 |
CN1439176A (zh) | 2003-08-27 |
US7319247B2 (en) | 2008-01-15 |
EP1277241B1 (de) | 2017-12-13 |
EP1277241A1 (de) | 2003-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1252837C (zh) | 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法 | |
CN1252838C (zh) | 具有辐射外延层序列的发光二极管芯片及其制造方法 | |
US7157294B2 (en) | Group III nitride compound semiconductor light-emitting element | |
US8536612B2 (en) | Light emitting device having a pluralilty of light emitting cells and package mounting the same | |
CN1309099C (zh) | 第ⅲ族氮化物化合物半导体发光元件 | |
CN1663055B (zh) | 具有碳化硅衬底的发光二极管 | |
US20030143772A1 (en) | High efficiency light emitting diode and method of making the same | |
EP2315271B1 (en) | Light emitting device, light emitting device package, and lighting system | |
CN1860621A (zh) | 半导体发光元件 | |
US20030122251A1 (en) | Optical semiconductor device | |
CN1905224A (zh) | 通孔垂直结构的半导体芯片或器件 | |
JPH114020A (ja) | 半導体発光素子及びその製造方法、並びに半導体発光装置 | |
CN1851948A (zh) | 通孔垂直结构的半导体芯片或器件 | |
CN1257562C (zh) | 半导体发光元件和半导体发光装置 | |
EP2405500B1 (en) | Semiconducting light emitting device with resonance condition between bottom reflector and active layer | |
KR20120136613A (ko) | 발광소자 | |
CN1198339C (zh) | 发光二极管的结构及其制造方法 | |
CN1540774A (zh) | 半导体发光二极管及其制造方法 | |
CN1788357A (zh) | 具有一个有源区域以及耦合到其相对表面的电接触件的发光装置及其制作方法 | |
EP3073538A1 (en) | Red light emitting device and lighting system | |
KR20170025035A (ko) | 발광소자 및 이를 포함하는 발광소자 패키지 | |
CN101075653A (zh) | 准垂直混合式N型高掺杂GaN LED倒装芯片制备工艺 | |
US20120256200A1 (en) | High efficiency leds | |
EP2228837A1 (en) | Light emitting device, fabrication method thereof, and light emitting apparatus | |
KR102425318B1 (ko) | 발광소자 및 이를 포함하는 발광소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20060419 |
|
CX01 | Expiry of patent term |