CN1220489A - 使用局部选择氧化在绝缘体上形成的体硅和应变硅 - Google Patents
使用局部选择氧化在绝缘体上形成的体硅和应变硅 Download PDFInfo
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- CN1220489A CN1220489A CN98121348A CN98121348A CN1220489A CN 1220489 A CN1220489 A CN 1220489A CN 98121348 A CN98121348 A CN 98121348A CN 98121348 A CN98121348 A CN 98121348A CN 1220489 A CN1220489 A CN 1220489A
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- oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
Abstract
Description
Claims (44)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US951827 | 1997-10-16 | ||
US08/951,827 US5963817A (en) | 1997-10-16 | 1997-10-16 | Bulk and strained silicon on insulator using local selective oxidation |
US951,827 | 1997-10-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1220489A true CN1220489A (zh) | 1999-06-23 |
CN1103497C CN1103497C (zh) | 2003-03-19 |
Family
ID=25492209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98121348A Expired - Lifetime CN1103497C (zh) | 1997-10-16 | 1998-10-15 | 使用局部选择氧化在绝缘体上形成的体硅和应变硅 |
Country Status (7)
Country | Link |
---|---|
US (2) | US5963817A (zh) |
EP (1) | EP0910124A3 (zh) |
JP (1) | JP3014372B2 (zh) |
KR (1) | KR100275399B1 (zh) |
CN (1) | CN1103497C (zh) |
SG (1) | SG67564A1 (zh) |
TW (1) | TW392223B (zh) |
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CN100466174C (zh) * | 2003-06-13 | 2009-03-04 | 国际商业机器公司 | 绝缘体上应变硅的单栅极和双栅极mosfet及其形成方法 |
CN100505276C (zh) * | 2003-08-25 | 2009-06-24 | 国际商业机器公司 | 应变绝缘硅 |
CN101924138A (zh) * | 2010-06-25 | 2010-12-22 | 中国科学院上海微系统与信息技术研究所 | 防止浮体及自加热效应的mos器件结构及其制备方法 |
CN101986435A (zh) * | 2010-06-25 | 2011-03-16 | 中国科学院上海微系统与信息技术研究所 | 防止浮体及自加热效应的mos器件结构及其制造方法 |
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CN107424929A (zh) * | 2016-05-23 | 2017-12-01 | 三星电子株式会社 | 形成用于半导体器件的纳米片堆叠件的方法 |
US20220352331A1 (en) * | 2021-05-03 | 2022-11-03 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
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- 1998-10-01 SG SG1998003955A patent/SG67564A1/en unknown
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CN107424929A (zh) * | 2016-05-23 | 2017-12-01 | 三星电子株式会社 | 形成用于半导体器件的纳米片堆叠件的方法 |
CN107424929B (zh) * | 2016-05-23 | 2021-11-19 | 三星电子株式会社 | 形成用于半导体器件的纳米片堆叠件的方法 |
US20220352331A1 (en) * | 2021-05-03 | 2022-11-03 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
US11935934B2 (en) * | 2021-05-03 | 2024-03-19 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
Also Published As
Publication number | Publication date |
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US6251751B1 (en) | 2001-06-26 |
EP0910124A3 (en) | 2000-08-16 |
EP0910124A2 (en) | 1999-04-21 |
JPH11284065A (ja) | 1999-10-15 |
TW392223B (en) | 2000-06-01 |
KR19990036735A (ko) | 1999-05-25 |
JP3014372B2 (ja) | 2000-02-28 |
US5963817A (en) | 1999-10-05 |
CN1103497C (zh) | 2003-03-19 |
KR100275399B1 (ko) | 2000-12-15 |
SG67564A1 (en) | 1999-09-21 |
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