CN1170317C - 半导体器件的电容器及其形成方法 - Google Patents
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Abstract
本发明提供一种使用含硅导电层作为存储节点的高电容的电容器及其形成方法。电容器包括存储节点、非晶Al2O3介质层和平板节点。此时,通过将反应汽相材料提供到存储节点上的方法,例如原子层淀积法形成非晶Al2O3层。此外,在形成非晶Al2O3层之前,对存储节点进行快速热氮化处理。形成平板节点后在约850℃下通过退火致密非晶Al2O3层,由此实现接近理论值30埃的氧化层的等效厚度。
Description
技术领域
本发明涉及半导体器件的电容器及其形成方法。
背景技术
随着半导体器件更加高度集成,有必要减小电容器占用的面积,但这样会降低电容。要解决这个问题,可以改变电容器的结构或使用高介电常数的材料。例如,有人提出一种使用比通常用做动态随机存取存储器(DRAM)的氧化物/氮化物/氧化物(ONO)层结构的介电常数高的Ta2O5介质层或(Ba,Sr)TiO3(BST)介质层的方法。
然而,完成该方法需要复杂的工艺。通常的电容器结构为硅/绝缘体/硅(SIS)层结构,其中掺有杂质的多晶硅层用做平板和存储节点。然而,对于使用Ta2O5层的情况需要金属/绝缘体/硅(MIS)层或金属/绝缘体/金属(MIM)层结构,对于使用BST层的情况需要MIM层结构。就是说,电容器的结构必须改变。
如果使用Ta2O5层,那么为了克服低台阶覆盖,必须在低温下使用化学汽相淀积(CVD)形成层,这是一种表面动力规范,能引起氧气不足、剩余的碳化氢残留在层中或结晶退化。由此,介电常数降低,绝缘特性变差。因此,要克服这些问题,需要附加高温下干O2退火工艺。此外,还公开了一种使用干退火工艺产生的Ta2O5层下的氧化层补偿Ta2O5层的绝缘特性的方法(Y.Ohyi,“Ta2O5 Capacitor DielectricMaterial for Giga-bit DRAMs”,IEDM Tech.Dig.,1994.p831)。
同时,晶界处原子排列的不连续很容易引起扩散。因此,当形成厚氧化层以补偿Ta2O5层的漏电流特性时,到晶界内的氧气扩散增加,由此氧化了平板节点。因此,在Ta2O5层和电容器的平板节点之间需要防止反应层,以防止Ta2O5层与平板节点发生反应(US专利No.4,891,684)。
同时,为了得到优良的漏电流特性,必须在BST层和电极之间形成肖特基阻挡层。为了形成肖特基阻挡层,电极应由如金属等的高功函数的材料形成,(Soon Oh Park,“Fabrication and ElectricalCharacterization of Pt/(Ba,Sr)TiO3/Pt Capacitors for Ultralarge-scaleIntegrated Dynamic Random Access Memory Applications”,Jpn.J.Appl.Phys.Vol.35,1996,p1548~1552)。为了使用金属电极,必须在金属电极和掺有杂质的多晶硅层之间的界面上形成欧姆接触。就是说,必须形成形成有欧姆接触的中间层,并且必须使用阻挡层。
如Ta2O5层或BST层的高介电常数的材料层需要复杂的工艺和结构,即需要将电容器的结构改变为MIM或MIS结构。
发明内容
本发明的一个目的是提供一种半导体器件的电容器,使用含硅的导电层作为存储节点以增加电容。
本发明的另一目的是提供一种形成半导体器件的电容器的方法,使用含硅的导电层作为存储节点以增加电容。
因此,要达到第一目的,本发明的电容器包括存储节点、介质层和平板节点。存储节点为含硅的导电层,例如掺有杂质的多晶硅层。此外,存储节点为选自由堆叠型、半球晶粒的硅层型和柱型构成的组中的一种三维结构。
由非晶Al2O3形成的介质层形成在存储节点上。这里,由每个源提供的汽相反应材料传输到随后进行反应的存储节点形成非晶Al2O3层。使用原子层淀积法,介质层的厚度为10~300埃,非晶Al2O3介质层的厚度为40~70埃。此外,防止反应层由选自氧化硅、氮化硅和氮氧化硅层构成的组中的一个形成。
平板节点形成在介质层上。这里,平板节点由选自掺有杂质的多晶硅、WSi2、MoSi2、TaSi2、TiSi2、W、Mo、Ta、Cr和TiN构成的组中的一种导电层形成。
为达到第二目的,本发明提供一种形成半导体器件的电容器的方法,包括步骤:(a)形成存储节点;(b)在存储节点上形成非晶Al2O3的介质层,其中非晶Al2O3通过使用Al(CH3)3源和氧化源的原子层淀积法形成;以及(c)在介质层上形成平板节点。
要达到第二目的,在本发明中,形成了存储节点。这里,存储节点为掺有杂质的多晶硅层,存储节点为选自由堆叠型、半球晶粒的硅层型和柱型构成的组中的一种三维结构。
然后,在存储节点上形成非晶Al2O3层构成的介质层。这里,在形成介质层的步骤(b)之前还进行存储节点上形成防止反应层的步骤。此时,防止反应层在300~1200℃下通过退火存储节点形成。具体地,使用如NH3气体等的N2源作为环境气体在约900℃下进行快速热氮化(RTN)工艺。因此,存储节点的防止反应层可以由氧化硅(SiO2)、氮化硅(SiN)或氮氧化硅(SiON)形成。
此外,通过来自几个源的每一个的反应汽相材料依次提供到将与存储节点反应的层上,通过例如原子层淀积(ALD)法循环进行淀积反应,形成10~300埃的非晶Al2O3层。具体地,形成40~80埃的非晶Al2O3层。这里,使用选自由Al(CH3)3和AlCl3构成的组中的一个作为铝源进行原子层淀积法,在进行原子层淀积法之前通过氢气钝化处理存储节点。
然后,在介质层上形成平板电极。这里,平板节点由选自掺有杂质的多晶硅、WSi2、MoSi2、TaSi2、TiSi2、W、Mo、Ta、Cr和TiN构成的组中的一种导电层形成。此外,在形成平板节点的步骤(c)之后,在低于非晶Al2O3层的结晶温度即150~900℃下,通过退火非晶Al2O3介质层,在非晶Al2O3介质层上进行初步致密。
使用选自由O2、NO和N2气体构成的组的一种气体作为环境气体或在真空中进行退火。具体地,在850℃下进行初步致密。
此外,在形成平板节点的步骤(c)之前,使用选自由O2、NO和N2气体构成的组的一种气体作为环境气体或在真空中,在低于非晶Al2O3层的结晶温度即150~900℃下,通过退火非晶Al2O3介质层,在非晶Al2O3介质层上再进行二次致密。具体地,用O2气作为环境气体在约450℃下进行退火。
根据本发明,含硅的导电层可用做存储节点,可以增加电容。
附图说明
通过参考附图对优选实施例的详细介绍,本发明的以上目的和优点将更明显。
图1为根据本发明一个实施例的电容器剖面图;
图2到4为用于实施例的电容器的存储节点结构剖面图;
图5为在半导体衬底上形成存储节点的步骤剖面图;
图6为在图5的存储节点上形成介质层的步骤剖面图;
图7为60埃的非晶Al2O3层的等同氧化物层的厚度与施加的驱动电压之间的关系曲线图;
图8为漏电流密度与施加到具有60埃的非晶Al2O3层的电容器上的驱动电压之间的曲线图;以及
图9为形成非晶Al2O3层后在约450℃下退火根据不同的条件变量电容器的电特性曲线图。
具体实施方式
下面参考附图详细介绍本发明,其中显示出了本发明的优选实施例。然而,本发明可以体现出许多不同的形式,并不局限于这里介绍的实施例。而且,提供这些实施例是为了公开充分和完整,并向本领域的技术人员完全转达出本发明的范围。在图中,为清楚起见放大了层和区域的厚度。类似的元件采用了类似的数字。也应该明白当层称做在另一层或衬底“上”时,它可以是直接位于另一层或衬底上,或也可以有插入层。
参考图1,根据本发明的一个实施例的电容器包括存储节点200、介质层400和平板节点500。存储节点200通过形成在覆盖半导体衬底100的层间绝缘层150中的接触孔电连接到半导体衬底100的有源区。如掺有杂质的多晶硅层等的含硅导电层被用做存储节点200。
非晶氧化铝Al2O3层用做覆盖存储节点200的介质层400。Al2O3层在它的结晶相例如α-Al2O3和γ-Al2O3与它的非晶相之间的介电常数几乎没有差别,其介电常数约为10。然而,非晶Al2O3层比氧化硅更容易氧化,并具有低碱离子渗透性和优良的性质。此外,非晶Al2O3层具有平滑的形态和很高的抗穿过晶界的扩散性,因此通过它可以抑制氧气的扩散。
来自几个源的每一个的反应汽相材料依次提供到层上,即存储节点上形成本实施例的非晶Al2O3层。特别是,重复薄膜的形成得到整个非晶Al2O3层。例如可以使用原子层淀积(ALD)法。
当使用ALD法顺序地将反应汽相材料提供到层上进行形成Al2O3层的反应形成非晶Al2O3层时,可以得到高度一致性,并且台阶覆盖可以达到约100%。此外,由于ALD法的工艺特性,没有什么杂质留在Al2O3层中。现已知溅射形成的Al2O3层有较差的台阶覆盖,如果通过CVD形成Al2O3层,很难除去残留的杂质并形成薄层。因此,在本实施例中,通过ALD法形成非晶Al2O3层,由此具有高台阶覆盖,并显示出高度的非晶态。此时,形成10~300埃的非晶Al2O3层,优选40~80埃。
此外,在存储节点200和介质层400之间可进一步形成氧化硅(SiO2)、氮化硅(SiN)或氮氧化硅(SiON)构成的防止反应层300。然而,由于非晶Al2O3层具有低氧气扩散性,因此可以省略防止反应层300。形成在介质层400上的平板节点500由如掺有杂质的多晶硅、WSi2、MoSi2、TaSi2、TiSi2、W、Mo、Ta、Cr或TiN等的导电材料形成。
同时,根据本实施例电容器的存储节点200、200a、200b和200c的结构可以形成为三维结构。例如,电容器结构可以采用如图1所示的堆叠型存储节点200。此外,可以在图2所示的电极表面上形成半球晶粒硅(HGS)层,由此存储节点200a具有HGS结构,由于它的不规则性使表面积增加。可以使用如图3所示的柱型存储电极200b或如图4所示的半球晶粒硅层形成在柱型电极的表面上以增加表面积的存储节点200c。即使使用三维存储节点200、200a、200b和200c,由于通过ALD工艺形成非晶Al2O3层,在本实施例的非晶Al2O3层中可以实现高度的一致性。高度的一致性避免了如较差的台阶覆盖等问题。
参考图5,存储节点200形成在形成有层间绝缘层150的半导体衬底100上。此时,本实施例的存储节点200可以形成为参考图2到4介绍的半球晶粒硅层型或柱型,而不是堆叠型的三维结构。此外,存储节点200由如掺有杂质的多晶硅层的含硅族的导电层形成。
然后,可以通过快速热工艺(RTP)退火存储节点200,由此再形成覆盖存储电极200的防止反应层300。此时,在300~1200℃优选900℃的温度下,使用NH3气体作氮源通过快速热氮化(RTN)进行60秒的退火。通过退火,存储节点200的硅与氮反应,由此形成SiN层,用做防止反应层300。此外,可以使用氧化硅或氮氧化硅层代替氮化硅层作为防止反应层300。
防止反应层300可以在以后使用氧气的环境气体进行的热退火期间更完全地防止氧气扩散到存储节点200内。即,可以防止氧化层的等效厚度(ET)由于氧气的扩散增加。然而,在本实施例中,不必通过RTP形成氮化硅层。这是由于通过Al2O3层保持了低氧气扩散性。
参考图6,通过氢钝化处理将留在存储节点200上的自然氧化层完全除去。
然后,通过来自几个源的每个反应汽相材料逐步地提供到存储节点200上的方法,在存储节点200上形成非晶Al2O3层。这可以不同的方式获得,特别是ALD法。通过ALD法,使用铝源在存储节点200上形成铝(Al)层到原子尺寸厚度的程度。然后,用氧化剂氧化Al层形成原子尺寸厚度程度的Al2O3层,即约0.5~50埃。随后,周期地进行形成原子尺寸厚度程度的Al2O3层的步骤,由此形成10~300埃的非晶Al2O3层。优选形成厚度为40~80埃的非晶Al2O3层。
具体地,Al(CH3)3或AlCl3,优选Al(CH3)3作为铝源。优选汽化的H2O作为氧化剂。此时,当进行使用氧化剂氧化Al层的步骤时,半导体衬底100的温度为150~400℃,优选约350℃。此外,每个周期非晶Al2O3层生长到约2埃的厚度。根据ALD工艺的特性可以实现非晶Al2O3层的非晶相。此外,根据ALD工艺的特性Al2O3层具有高度的一致性。由此可以实现近似100%的台阶覆盖。
然后,如图1所示的平板电极500形成在介质层400上。此时,平板电极500由如掺有杂质的多晶硅、WSi2、MoSi2、TaSi2、TiSi2、W、Mo、Ta、Cr或TiN等的导电层形成。
同时,这样生长的非晶Al2O3层的折射率约1.64λ,其中λ=633.0nm。非晶Al2O3层可以通过随后的退火工艺致密。致密化的程度可以通过测量折射率和层的厚度判断。即,生长非晶Al2O3层,然后在O2环境气体下退火,之后测量退火的Al2O3层的折射率估计致密程度。
(表1)
生长Al2O3层之前和之后的特性
折射率(λ=633.0nm) | |
生长后 | 1.64 |
退火(约800℃,O2,30分钟)后 | 1.692 |
如表1所示,通过O2退火,非晶Al2O3层的折射率增加,导致非晶Al2O3层通过退火致密化。由此,非晶Al2O3层的介电常数增加,使得氧化物的等效厚度(ET)最小化。
此外,测量形成在裸晶片上的SiO2层的厚度。即,在用标准的清洗剂I和HF处理的裸晶片上形成不同厚度的非晶Al2O3层,然后在约800℃的O2环境气体下退火非晶Al2O3层。然后,使用分光镜椭圆计测量形成的SiO2层的厚度。结果显示在表2中。
如表2所示,非晶Al2O3层抑制了O2的扩散。即,如果没有形成非晶Al2O3层,SiO2层生长到约66.6埃。如果使用非晶Al2O3层,SiO2层的厚度陡然减少。如果使用约100埃的非晶Al2O3层,那么SiO2层的厚度减少到约2埃。如上所述,本实施例的非晶Al2O3层抑制了O2的扩散,由此不必通过RTP形成防止反应层300,就可以实现优良的电容器性质。然而,在随后的退火工艺期间,可以使用防止反应层300以完全防止O2的扩散。
(表2)
SiO2层的厚度与Al2O3层的厚度
退火后Al2O3的厚度(埃) | SiO2层的厚度(埃) |
0 | 66.576 |
28.860 | 17.032 |
33.369 | 18.959 |
48.484 | 11.222 |
82.283 | 3.406 |
98.711 | 2.002 |
258.749 | 1.542 |
为了增加介电常数,通过退火在非晶Al2O3层上进行初步的致密化。可以在形成非晶Al2O3层之后的任何时间进行用于致密化的所述退火,优选在形成平板节点500之后进行。此时,在约150~900℃,优选850℃,该温度低于非晶Al2O3层的结晶温度,使用O2、NO气体或N2气体作为环境气体或在真空中进行退火。优选在N2的环境气体中进行约30分钟的退火。
当非晶Al2O3层的厚度约60埃时,非晶Al2O3层给出接近例如约26埃的理论ET值的ET值,Al2O3的介电常数假定为9。然而,可以进一步进行退火以实现接近理论ET值的值。即,形成非晶Al2O3层之后立即通过退火进行二次致密,二次致密为初步致密的预处理。
这里,在150~900℃,优选450℃,该温度低于非晶Al2O3层的结晶温度,使用O2、NO气体或N2气体作为环境气体或在真空中进行二次致密。优选在O2气体的环境气体中进行约30分钟的二次致密。
表3示出了为了说明二次致密的效果在组合条件下测量的不同电特性。即,由形成在半导体衬底100上的多晶硅层形成存储节点200,形成非晶Al2O3层,并测量电容器的电性质。表3包含十个测量结果,显示出在900℃下进行或不进行NH3的RTN工艺时,形成60埃或300埃的非晶Al2O3层,使用O2在约450℃下进行30分钟二次致密、在约800℃下进行30分钟二次致密、或不进行二次致密的效果。
如表3所示,不考虑其它的条件,约300埃的Al2O3层的漏电流密度为20nA/cm2或更低。然而,其它条件改变了约60埃的Al2O3层的漏电流。即,在不进行RTN、800℃下进行二次致密、60埃的第7个Al2O3层例子的ET接近57埃,厚度为所有情况中最厚的。在进行RTN的第1个例子中,ET约47埃,高于理论的ET值30埃,即,RTN层4埃+Al2O326埃。这意味着在以上的情况中生长了等量的氧化层。
然而,在Al2O3层为60埃厚的第3个例子中,二次致密的温度为450℃,进行RTN,ET为40埃,在Al2O3层为60埃厚的第6个例子中,二次致密的温度为450℃,不进行RTN,ET为37埃。然而,在第6个例子中,接近700nA/cm2的漏电流密度高于第3个例子中接近45nA/cm2的漏电流密度。从该结果我们可以看出在450℃进行二次致密的例3中,电容器的电特性优良。此外,如果在存储节点200和介质层400之间通过如RTN的退火形成如SiN2层、SiO2层或SiON层等的防止反应层300,电容器的电特性增强。
(表3)
与二次致密有关的电容器的电特性
编号 | RTN | Al2O3层的厚度(埃) | O2二次致密的温度 | 电容(pF) | tanδ | 漏电流密度(nA/cm2) | 等效氧化层的厚度(ET)(埃) | Cmin/Cmax(%) | |
Cmin | Cmax | ||||||||
1 | 是 | 60 | 800 | 615 | 661 | 0.012 | 25.8 | 47 | 93 |
2 | 300 | 800 | 235 | 247 | 0.031 | ≤20 | 125 | 95 | |
3 | 60 | 450 | 718 | 772 | 0.009 | 45.77 | 40 | 93 | |
4 | 300 | 450 | 259 | 263 | 0.042 | ≤20 | 117 | 98 | |
5 | 300 | - | 218 | 229 | 0.045 | ≤20 | 135 | 95 | |
6 | 否 | 60 | 450 | 766 | 832 | 0.06 | 704.38 | 37 | 92 |
7 | 60 | 800 | 535 | 546 | 0.014 | 37.32 | 57 | 98 | |
8 | 300 | 450 | 248 | 252 | 0.019 | ≤20 | 117 | 98 | |
9 | 300 | - | 210 | 219 | 0.052 | ≤20 | 141 | 96 | |
10 | 300 | 800 | 222 | 223 | 0.046 | ≤20 | 138 | 99 |
如上所述,当使用非晶Al2O3层作为介质层400并进行二次致密时,电容器的电特性增强。然而,在以上条件下得到的ET值没有达到理论值30埃。因此,下面将介绍形成平板节点500之后进行初步致密的效果。即,在表3所示的条件下形成平板节点500,然后使用N2作环境气体在约850℃下退火30分钟进行初步致密,然后测量十次电容器的电特性,如表4所示。
(表4)
与初步致密有关的电容器电特性
编号 | RTN | 半导体衬底的位置 | Al2O3层的厚度(埃) | O2二次致密的温度(℃) | 电容(pF) | tanδ | 漏电流密度(nA/cm2) | 等效氧化层的厚度(ET;埃) | Cmin/Cmax(%;±2V) | |
Cmin | Cmax | |||||||||
1 | 是 | C | 800 | 800 | 680 | 690 | 0.012 | 7.96 | 44.8 | 98.6 |
2 | C | 800 | 800 | 250 | 270 | 0.019 | 15.2 | 118.3 | 92.6 | |
3 | T | 60 | 450 | 830 | 874 | 0.014 | 68.4 | 35.07 | 95 | |
C | 840 | 890 | 0.028 | 28.6 | 34.89 | 94.4 | ||||
B | 830 | 876 | 0.032 | 25.6 | 35.31 | 94.7 | ||||
L | 825 | 859 | 0.035 | 53.6 | 36.02 | 96 | ||||
R | 840 | 882 | 0.014 | 65.4 | 35.07 | 95.2 | ||||
4 | C | 300 | 450 | 270 | 290 | 0.017 | 16.5 | 110 | 93.1 | |
5 | C | 300 | - | 260 | 270 | 0.017 | 13.1 | 116.1 | 96.3 | |
6 | 否 | T | 60 | 450 | 932 | 987 | 0.019 | - | 31.34 | 94.4 |
C | 930 | 990 | 0.017 | 677 | 31.30 | 94.4 | ||||
B | 905 | 946 | 0.011 | - | 32.71 | 95.7 | ||||
L | 925 | 971 | 0.014 | - | 31.86 | 95.3 | ||||
R | 910 | 964 | 0.016 | - | 32.09 | 94.4 | ||||
7 | C | 60 | 800 | 540 | 580 | 0.018 | 2.29 | 53.4 | 93.1 | |
8 | C | 300 | 450 | 310 | 313 | 0.018 | 13.3 | 98.8 | 99 | |
9 | C | 300 | - | 250 | 260 | 0.02 | 4.89 | 119.8 | 96.2 | |
10 | C | 300 | 800 | 230 | 240 | 0.02 | 11.2 | 133.5 | 95.8 |
在表4中,‘C’,‘B’,‘T’,‘L’和‘R’分别代表晶片的中心,下,上,左和右部分。初步致密可以减小表4所示所有情况下的ET值。在Al2O3层在二次致密工艺期间约450℃下退火并进行RTN的情况下(No.3-C),ET值为35埃。在其它条件与No.3-C相同但不进行RTN工艺的情况中(No.6-C),ET值为31埃。两个结果都接近理论值30埃。由此,这些结果意味着非晶Al2O3层的二次致密增加了电容。
图7示出了根据施加的电压在表4中60埃的非晶Al2O3层的ET值。即,参考数字710,715,730和735分别表示根据电压的表4的1,7,3和6的ET值。如图7所示,如果使用O2在450℃下进行30分钟的二次致密,并在850℃下进行30分钟的N2初步致密(730和750),即表4的3和6的情况中,测量的ET值接近于理论的ET值30埃。
参考图8,参考数字810,815,830和835分别代表根据电压的表4的7,1,6和3的漏电流密度。如图8所示,在接近图7所示的理论ET值的730和735的情况中,即表4的3和4的情况中,驱动电压为2V以下漏电流密度降低的情况对应于参考数字835的曲线,即No.3的情况。由于,如果在表4的No.3的条件下约450℃使用O2进行30分钟的二次致密,即RTN工艺后,在850℃下使用N2进行30分钟的初步致密,之后电容器的电特性优良。
下面说明二次致密的效果。二次致密的温度设置为450℃,可以实现上面介绍的电容器优良的电特性。此外,无论二次致密的环境气体不是O2(即N2),还是进行二次致密,都预先定为变量。此外,二次致密的时间和非晶Al2O3层的厚度都预定为变量,由此可以测量ET值和漏电流密度。条件显示在表5中。
参考图9,参考数字940代表最低的ET和最高的漏电流密度。然而,约60埃的非晶Al2O3层的参考数字950,960,970和980代表相互类似的ET和漏电流密度。此外,非晶Al2O3层接近于40埃(910),ET值类似并且漏电流密度增加。因此,在约60埃的非晶Al2O3层中,电容器特性几乎不随是否进行了二次致密、或二次致密的时间和环境气体而改变。这意味着二次致密不总是需要的步骤。换句话说,二次致密是补偿初步致密。即使平板节点500形成在不进行二次致密的介质层400上,也可以得到具有优良特性的电容器。即,存储节点200的RTN工艺之后形成非晶Al2O3层和平板节点500时,然后在约850℃下使用N2进行30分钟的初步致密,电容器的电特性优良。
(表5)
参考数字 | Al2O3层的厚度(埃) | 环境气体 | 二次致密的时间(min) |
910 | 40 | N2 | 10 |
920 | 50 | O2 | 10 |
930 | 50 | O2 | 30 |
940 | 50 | N2 | 10 |
950 | 60 | O2 | 10 |
960 | 60 | O2 | 30 |
970 | 60 | N2 | 10 |
980 | 60 | 没有 | 0 |
根据本发明,使用将来自几个源的每个反应汽相材料提供到层上即存储电极上的方法,在存储节点上形成非晶Al2O3介质层,其中使用例如ALD法周期地进行反应例如淀积。在形成非晶Al2O3层期间,使用向层上提供反应汽相材料周期性进行反应的方法得到非晶相。此外,通过这种方法,在非晶Al2O3层中没有杂质残留。此时,非晶Al2O3层具有低O2扩散性。由此,当使用含硅族的导电层做存储节点时,可以防止过量生长等效的氧化层。即,可以实现SIS结构的电容器,与ONO结构的电容器类似,由此可以克服电容器结构改变为MIS结构或MIM结构造成的困难。
此外,具有平滑形态和高度一致性的非晶Al2O3层可实现近似100%的台阶覆盖。因此,存储节点可以形成柱型、HSG型或堆叠型,由此增加了电容。非晶Al2O3层的介电常数等于晶相铝层的介电常数,由此可以得到高电容。
在非晶Al2O3层上形成平板节点后,在低于Al2O3的结晶温度例如约850℃下退火来致密化非晶Al2O3层。致密化减小了非晶Al2O3层的厚度并增加了折射率。即,非晶Al2O3层的介电常数增加。此外,等效氧化层的厚度减小,所以可以得到接近理论ET值例如约30埃的厚度,由此增加了电容。
可以在非晶Al2O3层和存储节点之间形成防止反应层,以减小等效氧化层的厚度并有助于电容器稳定工作。附加地进行致密以补偿致密化非晶Al2O3层的步骤,由此等效氧化层的厚度接近于理论ET值,由此增加了电容。
在图中和说明书中公开了本发明典型的优选实施例,虽然使用了特定的术语,但使用这些术语仅为概括和说明的意义,并不是为了限定。本发明的范围在下面的权利要求书中。
Claims (23)
1.一种形成半导体器件的电容器的方法,包括步骤:
(a)形成存储节点;
(b)在存储节点上形成非晶Al2O3的介质层,其中非晶Al2O3通过使用Al(CH3)3源和氧化源的原子层淀积法形成;以及
(c)在介质层上形成平板节点。
2.根据权利要求1的方法,其中存储节点为掺有杂质的多晶硅层。
3.根据权利要求1的方法,其中存储节点为选自由堆叠型、半球晶粒的硅层型和柱型构成的组中的一种三维结构。
4.根据权利要求1的方法,其中在形成介质层的步骤(b)之前还包括在存储节点上形成防止反应层的步骤。
5.根据权利要求4的方法,其中防止反应层由选自氧化硅、氮化硅和氮氧化硅层构成的组中的一种形成。
6.根据权利要求4的方法,其中防止反应层在300~1200℃下通过退火存储节点形成。
7.根据权利要求6的方法,其中使用快速热工艺在N2源气体环境中进行退火。
8.根据权利要求1的方法,其中所形成的非晶Al2O3介质层厚10~300埃。
9.根据权利要求8的方法,其中所形成的非晶Al2O3介质层厚40~80埃。
10.根据权利要求1的方法,其中由依次将反应汽相材料提供到存储节点的方法形成非晶Al2O3介质层。
11.根据权利要求10的方法,其中由依次将反应汽相材料提供到存储节点的方法为原子层淀积法。
12.根据权利要求11的方法,其中选自由Al(CH3)3和AlCl3构成的组中的一种作为铝源进行原子层淀积法。
13.根据权利要求11的方法,其中在进行原子层淀积法之前通过氢气钝化处理形成存储节点。
14.根据权利要求10的方法,其中在形成平板节点的步骤(c)之后,在非晶Al2O3介质层上进行初步致密。
15.根据权利要求14的方法,其中在低于非晶Al2O3层的结晶温度下通过退火非晶Al2O3介质层进行初步致密。
16.根据权利要求15的方法,其中在150~900℃下进行初步致密。
17.根据权利要求16的方法,其中在850℃下进行初步致密。
18.根据权利要求15的方法,其中使用选自由O2、NO和N2气体构成的组的一种气体作为环境气体或在真空中进行退火。
19.根据权利要求14的方法,其中在形成平板节点的步骤(c)之前,在非晶Al2O3介质层上附加地进行二次致密。
20.根据权利要求19的方法,其中在低于非晶Al2O3层的结晶温度下通过退火非晶Al2O3介质层进行二次致密。
21.根据权利要求20的方法,其中在150~900℃下进行二次致密。
22.根据权利要求20的方法,其中使用选自由O2、NO和N2气体构成的组的一种气体作为环境气体或在真空中进行二次致密。
23.根据权利要求1的方法,其中平板节点由选自掺有杂质的多晶硅、WSi2、MoSi2、TaSi2、TiSi2、W、Mo、Ta、Cr和TiN构成的组中的一种导电层形成。
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- 1998-07-10 CN CNB98115946XA patent/CN1170317C/zh not_active Expired - Lifetime
- 1998-07-22 TW TW087111959A patent/TW424296B/zh not_active IP Right Cessation
- 1998-10-09 JP JP28830798A patent/JP4107731B2/ja not_active Expired - Lifetime
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1999
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2001
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US6489214B2 (en) | 2002-12-03 |
TW424296B (en) | 2001-03-01 |
JPH11233726A (ja) | 1999-08-27 |
JP4107731B2 (ja) | 2008-06-25 |
CN1222765A (zh) | 1999-07-14 |
KR100275727B1 (ko) | 2001-01-15 |
KR19990065064A (ko) | 1999-08-05 |
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