CN105609411A - Method for improving HCD silicon nitride slice uniformity - Google Patents
Method for improving HCD silicon nitride slice uniformity Download PDFInfo
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- CN105609411A CN105609411A CN201610107296.6A CN201610107296A CN105609411A CN 105609411 A CN105609411 A CN 105609411A CN 201610107296 A CN201610107296 A CN 201610107296A CN 105609411 A CN105609411 A CN 105609411A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Abstract
The invention provides a method for improving HCD silicon nitride slice uniformity. The step of forming the HCD silicon nitride slice comprises the steps of pumping ammonia gas to a reaction cavity, continuing to pump ammonia gas, pumping HCD, forming a film, then pumping ammonia gas again, discharging residual gas, and pumping nitrogen. The film-forming speed on the edge part of the product, and the thickness difference between the center and the edge of the product can be reduced by gradually lowering the temperature of the reaction cavity in film forming process, so as to improve the uniformity of the Spacer2 HCD silicon nitride slice on the product, and an effect of improving the saturated driving current uniformity of the device can be realized finally.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly one is improved the inhomogeneity side of HCD nitrogenize silicon chipMethod.
Background technology
In semiconductor technology, each thermal process all can cause impurity to spread again, and all thermal process spread impurity againTotal impact, be exactly heat budget (thermalbudget). In whole technical process, all heat all mayAffect distribution and the activity of doping ion in substrate, thereby affect the electric property of device. In generalMOS device is more responsive to heat budget.
Along with cmos device characteristic size constantly reduces, the distribution profile of impurity is to nanometer levelClose, its distribution can have a strong impact on device performance, as lightly doped drain (LDD), and need to be at vertical and horizontalThe upper Impurity Distribution of accurately controlling. Heat budget easily causes a large amount of Impurity Diffusions and cannot meet shallow junction and narrow mixingThe requirement that matter distributes, can reduce dopant redistribution and reduce heat budget.
Adopt disilicone hexachloride (HCD) to react with ammonia (NH3) and generate silicon nitride (this reaction abbreviation HCDNitride), (this reaction is called for short DCS with adopting dichlorosilane (DCS) to react generation silicon nitride with NH3Nitride) compare and have the following advantages: (1) can significantly reduce heat budget, traditional DCSNitrideThe temperature of film forming will be higher than 650 DEG C, and the film-forming temperature of HCDNitride can be lower than 600 DEG C; (2) toolHave excellent coverage rate (StepCoverage), the StepCoverage of HCDNitride can be higher than 95%.Therefore,, in 45 nanometers and following technique, the second side wall (Spacer2) silicon nitride generally adopts HCDNitride forms.
Due to the impact of the factors such as load effect, the thickness of Spacer2HCDNitride product is all identicalFigure (Pattern), presents intermediate thin, fixing figure that edge is thick, and the thickness of its top (TOP) is equalEven property is 2.7%, the thickness evenness of middle (Center) is 2.9%, the thickness of bottom (Bottom) is equalEven property is 2.0%, wherein inhomogeneity being defined as (maximum-minimum of a value)/2/ mean value. For example, 40nmThe sensitivity (sensitivity) of the thickness of the saturation drive current (Idsat) of device to Spacer2 isAnd at present the scope of the thickness of HCDNitride can be up on productTherefore, improve Spacer2HCDNitride uniformity becomes the Focal point and difficult point that a semiconductor technology is manufactured.
Summary of the invention
The object of the present invention is to provide one to improve the inhomogeneity method of HCD nitrogenize silicon chip, by reducingThe rate of film build of product edge part, thus the difference in thickness at product center and edge reduced, improve the with thisThe uniformity of two side wall HCDNitride.
Technical scheme of the present invention is that one is improved the inhomogeneity method of HCD nitrogenize silicon chip, and it forms HCDEach step of nitrogenize silicon chip comprises: in reaction chamber, pass into ammonia, continue to pass into ammonia, pass into HCD,Film forming, again pass into ammonia, discharge residual gas and pass into nitrogen, wherein, react described in the time of film formingThe temperature of chamber reduces gradually.
Further, described in the time passing into ammonia and continue to pass into ammonia, reaction chamber keeps initial temperature notBecome.
Further, in the time passing into HCD described in the temperature of reaction chamber reduce gradually, tie at film forming procedureShu Shiqi temperature is minimum.
Further, in the time again passing into ammonia described in the temperature of reaction chamber rise gradually, until initial temperatureDegree.
Further, described in the time discharging residual gas and pass into nitrogen, reaction chamber keeps initial temperature notBecome.
Further, described initial temperature is T+ Δ T, and minimum temperature is T-Δ T, and wherein, Δ T is 2 DEG C～20℃。
Further, need to carry out N circulation after described each step completes, wherein N is 1～80.
Further, the speed that the temperature of described reaction chamber reduces is 0.2 DEG C～5 DEG C/point.
Further, the speed that the different warm area temperature of described reaction chamber reduce is by this warm area HCD silicon nitrideThe uniformity of sheet determines.
Further, the poorer speed that this warm area temperature reduces of the uniformity of described HCD nitrogenize silicon chip moreHigh.
Compared with prior art, the inhomogeneity method of HCD nitrogenize silicon chip of improving provided by the invention, by becomingWhen film, reduce gradually the temperature of reaction chamber, the rate of film build that reduces product edge part with this, reduces and producesThe difference in thickness of product centerand edge, thus improve Spacer2HCD nitrogenize silicon chip on product evenlyProperty, finally reach the inhomogeneity effect of saturation drive current of improving device.
Brief description of the drawings
The signal that improves the inhomogeneity method of HCD nitrogenize silicon chip that Fig. 1 proposes for one embodiment of the inventionFigure.
Detailed description of the invention
For making content of the present invention more clear understandable, below in conjunction with Figure of description, to content of the present inventionBe described further. Certainly the present invention is not limited to this specific embodiment, and those skilled in the art institute is ripeThe general replacement of knowing is also encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, in the time that example of the present invention is described in detail in detail, forBe convenient to explanation, schematic diagram does not amplify according to general ratio is local, should be to this as restriction of the present invention.
Core concept of the present invention is: during by film forming, reduce gradually the temperature of reaction chamber, reduce with thisThe rate of film build of product edge part, reduces the difference in thickness at product center and edge, thereby improves on productThe uniformity of Spacer2HCD nitrogenize silicon chip, finally reach the saturation drive current uniformity of improving deviceEffect.
The method of traditional formation HCD nitrogenize silicon chip comprises following steps: step S1: in reaction chamberPass into ammonia (NH3FLOW); Step S2: continue to pass into ammonia (NH3PREPRG), allow ammonia fillFull whole reaction chamber, prepares for passing into HCD; Step S3: pass into HCD (HCDFLOE); StepRapid S4: film forming (DEPO); Step S5: again pass into ammonia (AFTERNH3PURGE), make ammoniaGas reacts with HCD residual in reaction chamber, is conducive to the minimizing of technique particle; Step S6: discharge residualGas (EVAC), discharges ammonia residual in reaction chamber and HCD; Step S7: pass into nitrogen (N2PURGE), purification chamber.
The invention provides one and improve the inhomogeneity method of HCD nitrogenize silicon chip, in the time of step S4 film forming by instituteThe temperature of stating reaction chamber reduces gradually. Concrete, in the time carrying out step S1 and step S2 described in reaction chamberChamber keeps initial temperature constant, and described initial temperature is T+ Δ T; Described in the time carrying out step S3 and step S4The temperature of reaction chamber reduces gradually, and in the time that step S4 finishes, its temperature reaches minimum, and minimum temperature is T-Δ T;Described in the time carrying out step S5, the temperature of reaction chamber rises gradually, until initial temperature T+ Δ T; Carry outIt is constant that described in when step S6 and step S7, reaction chamber keeps initial temperature. Wherein, the scope of described Δ T is2 DEG C～20 DEG C. In the time of cooling, wafer (Wafer) edge cooling rate is greater than the cooling rate of center wafer,The rate of film build that reduces Waffer edge part with this, reduces Waffer edge rate of film build and center wafer film formingThe difference of speed, reduces the difference in thickness at product center and edge thus, thereby improves the Spacer2 on productThe uniformity of HCD nitrogenize silicon chip, finally reaches the inhomogeneity effect of saturation drive current of improving device.
In the present embodiment, need to carry out N circulation after described each step completes, wherein N is 1～80. InstituteThe speed of stating the temperature reduction of reaction chamber is 0.2 DEG C～5 DEG C/point. Described reaction chamber has different warm areas,Comprise top (Top) warm area, top-middle part (Top-Center) warm area, middle part (Center) warm area,Bottom-middle part (Bott-Center) warm area and bottom (Bott) warm area, due to the not phase of temperature of different warm areasWith, the uniformity of the HCD nitrogenize silicon chip forming at different warm areas is also different, therefore, and at described reaction chamberWhen middle reduction temperature, the speed that different warm area temperature reduce is not identical yet, the speed that in different warm areas, temperature reducesThe uniformity of the HCD nitrogenize silicon chip that rate is formed by this warm area determines, and in the different warm areas of described reaction chamberThe uniformity of the HCD nitrogenize silicon chip forming before the speed that temperature reduces and this warm area is inverse ratio, if HCDThe good uniformity of nitrogenize silicon chip, the speed that this warm area temperature reduces is low, if the uniformity of HCD nitrogenize silicon chipPoor, the speed that this warm area temperature reduces is high, with this reduce in different warm areas Waffer edge rate of film build withThe difference of center wafer rate of film build.
The signal that improves the inhomogeneity method of HCD nitrogenize silicon chip that Fig. 1 proposes for one embodiment of the inventionFigure, please refer to shown in Fig. 1, by specific embodiment, the present invention is proposed to improve HCD nitrogenize silicon chip equalThe method of even property is elaborated.
At the Center of reaction chamber warm area, at step S1 temperature constant temperature at T1+ Δ T1, wherein T1 is550 DEG C～590 DEG C, Δ T1 is 2 DEG C～20 DEG C; At step S3 with the rate of temperature fall of 0.2 DEG C～5 DEG C/point from T1+ Δ T1Start film forming, until step S4 finishes, its temperature is reduced to T1-Δ T1; Then in follow-up step S5 mistakeIn journey, be warming up to T1+ Δ T1, then carry out the circulation of film forming next time, altogether need N circulation, wherein NBe 1～80.
At the Top of reaction chamber warm area, at step S1 temperature constant temperature at T2+ Δ T2, wherein T2 is 562 DEG C～602 DEG C, Δ T2 is 2 DEG C～20 DEG C; Step S3 with the rate of temperature fall of 0.2～5 DEG C/point from T2+ Δ T2Film forming, until step S4 finishes, its temperature is reduced to T2-Δ T2; Then in follow-up step S5 processBe warming up to T2+ Δ T2, then carry out the circulation of film forming next time, altogether need N circulation, wherein N be 1～80。
At the Top-Center of reaction chamber warm area, at step S1 temperature constant temperature at T3+ Δ T3, wherein T3Be 556 DEG C～596 DEG C, Δ T3 is 2 DEG C～20 DEG C; At step S3 with the rate of temperature fall of 0.2～5 DEG C/point from T3+ Δ T3Start film forming, until step S4 finishes, its temperature is reduced to T3-Δ T3; Then in follow-up step S5 mistakeIn journey, be warming up to T3+ Δ T3, then carry out the circulation of film forming next time, altogether need N circulation, wherein NBe 1～80.
At the Bott-Center of reaction chamber warm area, at step S1 temperature constant temperature at T4+ Δ T4, wherein T4Be 545 DEG C～585 DEG C, Δ T4 is 2 DEG C～20 DEG C; Step S3 with the rate of temperature fall of 0.2～5 DEG C/point from T4+ Δ T4Start film forming, until step S4 finishes, its temperature is reduced to T4-Δ T4; Then in follow-up step S5 mistakeIn journey, be warming up to T4+ Δ T4, then carry out the circulation of film forming next time, altogether need N circulation, wherein NBe 1～80.
At the Bott of reaction chamber warm area, at step S1 temperature constant temperature at T5+ Δ T5, wherein T5 is 552 DEG C～592 DEG C, Δ T5 is 2 DEG C～20 DEG C; Step S3 starts into from T5+ Δ T5 with the rate of temperature fall of 0.2～5 DEG C/pointFilm, until step S4 finishes, its temperature is reduced to T5-Δ T5; Then in follow-up step S5 process, riseTemperature, to T5+ Δ T5, is then carried out the circulation of film forming next time, altogether need to circulate for N time, wherein N be 1～80。
Preferably, at the Center of reaction chamber warm area, at step S1 temperature constant temperature at 579 DEG C; In stepRapid S3 is with the rate of temperature fall of 2 DEG C/time since 579 DEG C of film forming, until step S4 finishes, its temperature is reduced to571 DEG C, the time of film forming is 4 minutes altogether; Then in follow-up step S5 process, be warming up to 579 DEG C,Then carry out the circulation of film forming next time, altogether need 10 circulations;
At the Top of reaction chamber warm area, at step S1 temperature constant temperature at 591 DEG C; At step S3 with 2 DEG C/ point rate of temperature fall since 591 DEG C of film forming, until step S4 finishes, its temperature is reduced to 583 DEG C, totalThe time of film forming is 4 minutes altogether; Then in follow-up step S5 process, be warming up to 591 DEG C, then carry outThe circulation of film forming next time, needs 10 circulations altogether;
At the Top-Center of reaction chamber warm area, at step S1 temperature constant temperature at 585 DEG C; At step S3With the rate of temperature fall of 2 DEG C/point, since 585 DEG C of film forming, until step S4 finishes, its temperature is reduced to 577 DEG C,The time of film forming is 4 minutes altogether; Then in follow-up step S5 process, be warming up to 585 DEG C, then enterThe row circulation of film forming next time, needs 10 circulations altogether;
At the Bott-Center of reaction chamber warm area, at step S1 temperature constant temperature at 572 DEG C; At step S3With the rate of temperature fall of 2 DEG C/point, since 572 DEG C of film forming, until step S4 finishes, its temperature is reduced to 568 DEG C,The time of film forming is 4 minutes altogether; Then in follow-up step S5 process, be warming up to 572 DEG C, then enterThe row circulation of film forming next time, needs 10 circulations altogether;
At the Bott of reaction chamber warm area, at step S1 temperature constant temperature at 579 DEG C; At step S3 with 1 DEG C/ point rate of temperature fall since 579 DEG C of film forming, until step S4 finishes, its temperature is reduced to 575 DEG C, totalThe time of film forming is 4 minutes altogether; Then in follow-up step S5 process, be warming up to 579 DEG C, then carry outThe circulation of film forming next time, needs 10 circulations altogether.
Final growthHCD nitrogenize silicon chip, realize HCD silicon nitride thickness on product evenlyProperty is less than 1%. And owing to being positioned at Bott warm area and Bott-Center warm area in existing technique manufactureThe thickness difference of Wafer margin and center is less, is positioned at the Wafer limit of Top warm area and Top-Center warm areaThe thickness difference at Yuan Yu center is larger, therefore relative with the speed of Top-Center warm area cooling at Top warm areaLarger.
In sum, the inhomogeneity method of HCD nitrogenize silicon chip of improving provided by the invention, during by film forming byGradually reduce the temperature of reaction chamber, the rate of film build that reduces product edge part with this, reduces product centerWith the difference in thickness at edge, thereby improve the uniformity of the Spacer2HCD nitrogenize silicon chip on product, finalReach the inhomogeneity effect of saturation drive current of improving device.
Foregoing description is only the description to preferred embodiment of the present invention, not any limit to the scope of the inventionFixed, any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong toIn the protection domain of claims.
Claims (10)
1. improve the inhomogeneity method of HCD nitrogenize silicon chip, it forms each step of HCD nitrogenize silicon chipComprise: in reaction chamber, pass into ammonia, continue to pass into ammonia, pass into HCD, film forming, again pass into ammoniaGas, discharge residual gas and pass into nitrogen, it is characterized in that, in the time of film forming described in the temperature of reaction chamberReduce gradually.
2. the inhomogeneity method of HCD nitrogenize silicon chip of improving as claimed in claim 1, is characterized in that,It is constant that described in the time passing into ammonia and continue to pass into ammonia, reaction chamber keeps initial temperature.
3. the inhomogeneity method of HCD nitrogenize silicon chip of improving as claimed in claim 2, is characterized in that,Described in the time passing into HCD, the temperature of reaction chamber reduces gradually, and in the time that film forming procedure finishes, its temperature is minimum.
4. the inhomogeneity method of HCD nitrogenize silicon chip of improving as claimed in claim 4, is characterized in that,Described in the time again passing into ammonia, the temperature of reaction chamber rises gradually, until initial temperature.
5. the inhomogeneity method of HCD nitrogenize silicon chip of improving as claimed in claim 5, is characterized in that,It is constant that described in the time discharging residual gas and pass into nitrogen, reaction chamber keeps initial temperature.
6. as described in any one in claim 1～5, improve the inhomogeneity method of HCD nitrogenize silicon chip, itsBe characterised in that, described initial temperature is T+ Δ T, and minimum temperature is T-Δ T, and wherein, Δ T is 2 DEG C～20 DEG C.
7. as described in any one in claim 1～5, improve the inhomogeneity method of HCD nitrogenize silicon chip, itsBe characterised in that, after described each step completes, need to carry out N circulation, wherein N is 1～80.
8. as described in any one in claim 1～5, improve the inhomogeneity method of HCD nitrogenize silicon chip, itsBe characterised in that, the speed that the temperature of described reaction chamber reduces is 0.2 DEG C～5 DEG C/point.
9. the inhomogeneity method of HCD nitrogenize silicon chip of improving as claimed in claim 1, is characterized in that,The speed that the different warm area temperature of described reaction chamber reduce is determined by the uniformity of this warm area HCD nitrogenize silicon chip.
10. the inhomogeneity method of HCD nitrogenize silicon chip, the described HCD nitrogen of improving as claimed in claim 9The poorer speed that this warm area temperature reduces of uniformity of SiClx sheet is faster.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109037048A (en) * | 2018-07-27 | 2018-12-18 | 上海华力集成电路制造有限公司 | The method for improving nitride film etching inner evenness |
| CN110223915A (en) * | 2019-05-15 | 2019-09-10 | 电子科技大学 | A kind of production method for the silicon nitride film that can be changed with thickness gradient |
| CN110331387A (en) * | 2019-08-05 | 2019-10-15 | 德淮半导体有限公司 | A kind of chemical vapor deposition process |
| CN110578132A (en) * | 2019-09-09 | 2019-12-17 | 长江存储科技有限责任公司 | Chemical vapor deposition method and apparatus |
| CN111048409A (en) * | 2018-10-11 | 2020-04-21 | 长鑫存储技术有限公司 | Batch type diffusion deposition method |
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Application publication date: 20160525 |