CN104409525A - Surface passivating method of semiconductor photoelectric device - Google Patents
Surface passivating method of semiconductor photoelectric device Download PDFInfo
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- CN104409525A CN104409525A CN201410674271.5A CN201410674271A CN104409525A CN 104409525 A CN104409525 A CN 104409525A CN 201410674271 A CN201410674271 A CN 201410674271A CN 104409525 A CN104409525 A CN 104409525A
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- photoelectric device
- semiconductor photoelectric
- layer
- atom layer
- sulphur atom
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 15
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims description 31
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 25
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 11
- 239000008151 electrolyte solution Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 5
- 238000003487 electrochemical reaction Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000007246 mechanism Effects 0.000 abstract description 2
- 125000004434 sulfur atom Chemical group 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004073 vulcanization Methods 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001978 electrochemical passivation Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000002440 hepatic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a surface passivating method of a semiconductor photoelectric device. The surface passivating method comprises the following steps of: covering a sulfur atom layer on the surface of the semiconductor photoelectric device, and covering a medium film on the sulfur atom layer, wherein the atom layer can be formed by virtue of an anode vulcanization method, and the medium layer can be SiO2 or ZnS. In an electrochemical reaction process, the sulfur atoms are bonded with suspension bonds on the surface of the device, so that an electronic channel produced by surface suspension bonds is sealed, and therefore, an electron-cavity compound mechanism of the apparatus surface is isolated. The surface passivating method of the semiconductor photoelectric device has the advantages of simple operation, low cost and remarkable passivating effect.
Description
Technical field
The present invention relates to semiconductor technology, mainly a kind of surface passivation method to semiconductor photoelectric device.The present invention can be applied in such as antimonide infrared optoelectronic device manufacturing processes, reaches the object improving photoelectric device performance.
Background technology
Along with the progress of science and technology, semiconductor photoelectric device, as semiconductor laser, the application of detector etc. is day by day extensive.Semiconductor photoelectric device, in optical communication, optical information reception and process etc., has the superior function that other devices cannot replace, in military, civilian, have boundless prospect.But at the photoelectric device based on semiconductor PN in the fabrication process, the performance of process of surface treatment on device has very large impact.The tracking current of device is one of principal element of limiting device operating efficiency.Due in the manufacture process of Material growth and device, form outstanding key at semiconductor-air interface, form electron channel on surface, reduce the generation recombination rate of electron-hole, thus reduce the efficiency of photoelectric device.Therefore, reducing tracking current, is improve the very important step of device performance in process of surface treatment.In existing device fabrication process, the surface passivation method of application has a lot, but passivation effect alternates betwwen good and bad, and some processes is comparatively complicated.
Summary of the invention
(1) technical problem that will solve
The object of this invention is to provide a kind of surface passivation method of semiconductor photoelectric device, to suppress the tracking current of semiconductor photoelectric device, improve its performance.
(2) technical scheme
For achieving the above object, the present invention proposes a kind of surface passivation method of semiconductor photoelectric device, comprises the steps: the surface coverage one deck sulphur atom layer at described semiconductor photoelectric device, described sulphur atom layer covers a layer dielectric.
According to the specific embodiment of the present invention, described sulphur atom layer is formed by plating.
According to the specific embodiment of the present invention, the electroplate liquid that described electroplating process adopts is ethylene glycol solution or the NH of Na2S
4the aqueous solution of S.
According to the specific embodiment of the present invention, the concentration of described electroplate liquid is 0.1 ~ 0.2mol/L.
According to the specific embodiment of the present invention, at described electroplating process, the material on the surface of described semiconductor photoelectric device is fixed in electrolyte solution, as anode.
According to the specific embodiment of the present invention, described dielectric layer is SiO
2or ZnS.
According to the specific embodiment of the present invention, described dielectric layer is formed by the method for magnetron sputtering or chemical vapour deposition (CVD).
According to the specific embodiment of the present invention, before sulphur atom layer described in the surface coverage of described semiconductor photoelectric device, to described surface removal oxide layer.
(3) beneficial effect
The surface passivation method of the semiconductor photoelectric device that the present invention proposes is the elemental sulfur forming one deck dense uniform at device surface, in electrochemical reaction process, sulphur atom is combined with the dangling bonds of device surface, thus enclose the electron channel of the outstanding key generation in surface, completely cut off the multiple mechanism of the electron-hole of device surface, the present invention has simple to operate, cost is low, the significant advantage of passivation effect.
And, the surface passivation method of semiconductor photoelectric device of the present invention, the outstanding key of semiconductor-air interface can be cut off efficiently, need to cover the stable deielectric-coating of one deck thereon although sulphur atom layer is unstable in atmosphere, but to cut off efficiency higher for dangling bonds compared with simple covering wide band gap deielectric-coating, greatly save cost compared with covering SU-8 glue, there is boundless application prospect.
Accompanying drawing explanation
Fig. 1 is the flow chart of the anodic sulfide of one embodiment of the present of invention;
Fig. 2 is the anodic sulfide circuit arrangement figure of one embodiment of the present of invention;
Fig. 3 is the passivating film SEM image after the preparation of one embodiment of the present of invention completes;
In Fig. 4 one embodiment of the present of invention device dark current comparison diagram before and after passivation.
Embodiment
Generally speaking, the surface passivation method of the semiconductor photoelectric device that the present invention proposes, is the surface coverage one deck sulphur atom layer at semiconductor photoelectric device, covers a layer dielectric afterwards.
Described sulphur atom layer can deposit the elemental sulfur of one deck dense uniform with electric plating method.When electroplating, galvanic anode is the surfacing of the semiconductor photoelectric device needing passivation, and negative electrode can be noble metal electrode, and as platinum electrode, power supply is constant-current source.Need the oxide fully removing its surface before plating.
Preferably, the electroplate liquid adopted during plating is Na
2the ethylene glycol solution of S or NH
4the aqueous solution of S.Electroplate liquid is Na
2during the ethylene glycol solution of S, need the surface of passivation of wanting of described semiconductor photoelectric device fully to soak with the moisture removing this surface in ethanolic solution before plating, otherwise the compactness of sulphur atom layer can be affected.
Increase with electroplating time, the elemental sulfur atomic level surface of dense uniform presents by golden yellow to orange red to hepatic color change, and the thickness of the sulphur atom layer that different colour developing is corresponding and compactness are all had any different.
Described dielectric layer can be SiO
2or the deielectric-coating of the stable in properties such as ZnS, thus the effect that composite surface hangs key can be reached.When described deielectric-coating is SiO
2or during ZnS, the method can choosing magnetron sputtering or chemical vapour deposition (CVD) covers, object is to prevent its sex change by the sulphur atom layer that available protecting is unstable in atmosphere.
Confirm by experiment, use the semiconductor photoelectric device after forwarding method passivation of the present invention compared with during non-passivation, under 77K working temperature, dark current reduces two orders of magnitude, obviously has the effect reducing tracking current.
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
In this embodiment, semiconductor photoelectric device is InAs/GaSb infrared photoconductivity detector.This detector first grows high-quality resilient coating on gaas substrates with molecular beam epitaxy technique, the InAs/GaSb superlattice epitaxial wafer of rear preparation 1 ~ 3 μm of detecting band, recycles the infrared photoconductivity detector that this epitaxial wafer manufactures.
Fig. 1 is the flow chart of the anodic sulfide of one embodiment of the present of invention, and as shown in Figure 1, the process of the surface of this detector being carried out to anodic sulfide comprises:
S1, remove and treat the oxide of the detector surface of passivation.
In this embodiment, described surface is soaked and is removed oxide on surface in hydrochloric acid solution, and hydrochloric acid solution is 1: 10 dilution concentrated hydrochloric acid gained solution.
S2, described detector surface to be cleaned.
Specifically, in this embodiment, first 20s is cleaned in deionized water in described surface, remove the hydrochloric acid of this remained on surface, afterwards by this surface rinsed clean in water; Then, described surface is cleaned in ethanolic solution, with the hydrone except this surface.
S3, electroplate one deck sulphur atom layer at described detector surface.
In this embodiment, the material on described surface is fixed in electrolyte solution, as anode; Platinum electrode is placed, as negative electrode in electrolyte solution; Then to connect in negative electrode and anode to active circuit and to be energized, thus at this electroplating surface one deck sulphur atom layer.
Fig. 2 is the anodic sulfide circuit arrangement figure of this embodiment.This device comprises the container of constant-current source, anode, negative electrode and accommodation electrolyte solution.Electrolyte solution is Na
2the ethylene glycol solution of S, or NH
4the aqueous solution of S, concentration is 0.1 ~ 0.2mol/L.
In this embodiment, anode, for comprising a copper post, treats that the surface of the semiconductor photoelectric device of passivation is fixed on the copper post of anode.Then, connect power-on circuit and open constant-current source, starting plating.When reaching predetermined voltage, powered-down, takes off substrate slice.Described device surface will be cleaned in ethanol, to remove residual electroplate liquid, afterwards through washed with de-ionized water, dry up with nitrogen, complete anodic sulfide process.
After anodic sulfide completes, form a dielectric layer on described sulphur atom layer surface.In this embodiment, at described sulphur atom layer superficial growth SiO
2or ZnS, thickness is 200 ~ 300nm.The deielectric-coating covered can adopt magnetron sputtering or learn the method formation of vapour deposition, additive method also can be adopted to be formed, the method for such as thermal evaporation.The present invention is not restricted concrete formation method.
Fig. 3 is the SEM image of the passivation layer after completing prepared by this embodiment.As shown in Figure 3, sulphur atom layer 1 is the elemental sulfur at the dense uniform of device surface formation after anodic sulfide, and dielectric layer 2 is the SiO of Grown by Magnetron Sputtering
2deielectric-coating.
In Fig. 4 this embodiment of the present invention semiconductor photoelectric device passivation before and after dark current comparison diagram.As shown in Figure 4, the dark current after passivation reduces significantly.
In sum, method of the present invention is semiconductor photoelectric device surface passivation method electrochemical reaction combined with physical barrier.Electrochemical reaction is the electrochemical passivation method of anodic sulfide, is the electrolyte solution that will the device surface of passivation needed to immerse special formulation, utilizes specific currents or voltage to grow the sulphur simple substance layer of one deck even compact.Method of the present invention effectively can reduce the generation of device surface dangling bonds, thus effectively reduce the tracking current of device, physical passivation layer can completely cut off the long-term effectiveness that air ensures electrochemical passivation simultaneously, thus significantly improves semiconductor photoelectric device Performance And Reliability.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a surface passivation method for semiconductor photoelectric device, comprises the steps:
At surface coverage one deck sulphur atom layer of described semiconductor photoelectric device, described sulphur atom layer covers a layer dielectric.
2. the surface passivation method of semiconductor photoelectric device as claimed in claim 1, is characterized in that, described sulphur atom layer is formed by plating.
3. the surface passivation method of semiconductor photoelectric device as claimed in claim 2, is characterized in that, the electroplate liquid that described electroplating process adopts is Na
2the ethylene glycol solution of S or NH
4the aqueous solution of S.
4. the surface passivation method of semiconductor photoelectric device as claimed in claim 3, it is characterized in that, the concentration of described electroplate liquid is 0.1 ~ 0.2mol/L.
5. the surface passivation method of semiconductor photoelectric device as claimed in claim 2, is characterized in that, at described electroplating process, be fixed in electrolyte solution, as anode by the material on the surface of described semiconductor photoelectric device.
6. the surface passivation method of semiconductor photoelectric device as claimed in claim 1, it is characterized in that, described dielectric layer is SiO
2or ZnS.
7. the surface passivation method of semiconductor photoelectric device as claimed in claim 6, is characterized in that, described dielectric layer is formed by the method for magnetron sputtering or chemical vapour deposition (CVD).
8. the surface passivation method of semiconductor photoelectric device as claimed in claim 1, is characterized in that, before sulphur atom layer described in the surface coverage of described semiconductor photoelectric device, to described surface removal oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674271.5A CN104409525A (en) | 2014-11-21 | 2014-11-21 | Surface passivating method of semiconductor photoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674271.5A CN104409525A (en) | 2014-11-21 | 2014-11-21 | Surface passivating method of semiconductor photoelectric device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104409525A true CN104409525A (en) | 2015-03-11 |
Family
ID=52647138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410674271.5A Pending CN104409525A (en) | 2014-11-21 | 2014-11-21 | Surface passivating method of semiconductor photoelectric device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409525A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591838A (en) * | 2016-11-16 | 2017-04-26 | 昆明物理研究所 | Method for passivating surface of InGaAs device with composite film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4751201A (en) * | 1987-03-04 | 1988-06-14 | Bell Communications Research, Inc. | Passivation of gallium arsenide devices with sodium sulfide |
-
2014
- 2014-11-21 CN CN201410674271.5A patent/CN104409525A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4751201A (en) * | 1987-03-04 | 1988-06-14 | Bell Communications Research, Inc. | Passivation of gallium arsenide devices with sodium sulfide |
Non-Patent Citations (1)
| Title |
|---|
| 郭杰 等: "InAs/GaSb超晶格中波红外二极管的阳极硫化", 《光子学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591838A (en) * | 2016-11-16 | 2017-04-26 | 昆明物理研究所 | Method for passivating surface of InGaAs device with composite film |
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