CN104134745B - MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) - Google Patents

MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) Download PDF

Info

Publication number
CN104134745B
CN104134745B CN201410171833.4A CN201410171833A CN104134745B CN 104134745 B CN104134745 B CN 104134745B CN 201410171833 A CN201410171833 A CN 201410171833A CN 104134745 B CN104134745 B CN 104134745B
Authority
CN
China
Prior art keywords
aluminium base
glue
copper foil
led
aluminum base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410171833.4A
Other languages
Chinese (zh)
Other versions
CN104134745A (en
Inventor
黄礼元
童朝海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shaoxing Boom Lighting Co Ltd
Original Assignee
Shaoxing Boom Lighting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shaoxing Boom Lighting Co Ltd filed Critical Shaoxing Boom Lighting Co Ltd
Priority to CN201410171833.4A priority Critical patent/CN104134745B/en
Publication of CN104134745A publication Critical patent/CN104134745A/en
Application granted granted Critical
Publication of CN104134745B publication Critical patent/CN104134745B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

The invention relates to the technical field of LED (Light Emitting Diode) packaging, and particularly discloses an MCOB (Multi-chips On Board) packaging structure of an aluminum base LED. The packaging structure comprises an aluminum base and a plurality of LED chips, wherein a dense alumina film is arranged on one surface of the aluminum base; a plurality of glue rings formed by colloid solidification are arranged on the outer side of the alumina film; light cups are defined by the glue rings and the alumina film; two exposed copper foil electrodes are arranged on the surface of the alumina film located in the glue rings; the LED chips are connected in series between the copper foil electrodes by gold wires, and connected with the aluminum base by heat-conducting glue; fluorescent glue is filled in the light cups; two main electricity-conducting ends are arranged on the outer sides of the light cups on the alumina film on the surface of the aluminum base; and the copper foil electrodes in the light cups are electrically connected with the main electricity-conducting ends by copper foil wires. The alumina film is directly obtained by oxidation treatment of the aluminum base to serve as an insulating layer, therefore, the packaging structure has the benefits that the packaging structure is simple in technology, good in heat dissipation performance and high in light emitting rate, and the manufacturing cost is lowered greatly.

Description

The MCOB packaging technology of aluminium base LED
Technical field
The present invention relates to LED encapsulation technology field, the MCOB encapsulating structure of more particularly, to a kind of aluminium base LED and technique.
Background technology
With the development of LED illumination industry, present LED chip generally adopts COB to encapsulate, and COB encapsulation refers to that LED chip is straight It is connected on whole substrate and carries out bonding encapsulation, on inner substrate, the succession of N number of chip is integrated and be packaged, main use To solve the problems, such as small-power chip manufacturing high-powered LED lamp, can be radiated with dispersed chip, to improve light efficiency, improve LED simultaneously Glare effect.COB pharosage is high, and the few light of dazzle is soft, and issue is an equally distributed smooth face, at present in ball Bubble, shot-light, Down lamp, fluorescent lamp, street lamp, the light fixture such as bulkhead lamp is widely used.On the basis of COM encapsulation, occur now again Various MCOB encapsulation, MCOB encapsulating structure has the characteristics that luminous efficiency is high, caloric value is little, and MCOB encapsulation is each chip Individually load the radiating thus improving light extraction efficiency, strengthening LED chip in corresponding light cup.Common aluminium base MCOB encapsulation knot In structure, it is all generally that aluminium base surface is dug out multiple pyramidal pits and formed multiple light cups, then LED chip is arranged on light cup bottom, Aluminium base thermal conductivity is 271 ~ 320 w/(m.k), and insulating barrier thermal conductivity is 0.4 ~ 3.0 w/(m.k), for increased thermal conductivity energy, Generally all it is not provided with insulating barrier in MCOB encapsulating structure, but in order to ensure the natural insulation between LED chip and aluminium base, LED The gold thread that connects of chip is all that electrode is flip-chip mounted connection upper, and gold thread stretches out on the upside of LED chip will stop part light splitting Source, thus reduce light emission rate;Go out small light cup in aluminium base Surface Machining, light cup bottom requires flat smooth, aluminium base adds simultaneously Work required precision is high, therefore high processing costs.
Chinese patent Authorization Notice No.:CN202549929U, in authorized announcement date on November 21st, 2012, discloses a kind of height The MCOB encapsulating structure of effect radiating, is provided with substrate on the region of reflector and is packaged with one layer of expansion arogel;Crystal grain is by encapsulating Glue is encapsulated in reflector, is to expand arogel above packaging plastic;Crystal grain includes the LED chip of bipolar electrode, and LED chip passes through two Electrode flip chip bonding on a silicon substrate, bores carbon-coating for class on a silicon substrate, and it is the gold bonding with the electrode of LED chip that class is bored on carbon-coating Belong to solder layer, solder layer includes being connected respectively with two electrodes and mutual two parts disconnecting, and this two partly all by drawing Line is connected with two chip electrodes being located at reflection rim of a cup respectively.There is no insulating barrier, LED chip is easily and aluminium in this structure Base is short-circuited, simultaneously aluminium base high processing costs, and gold thread therefore can stop from upside and do not seal light, affects light emission rate;Again As Authorization Notice No.:CN203071063U, authorized announcement date in July, 2013 No. 17, discloses a kind of new MCOB light source, including Housing, setting illuminating module in the housing and circuit board, illuminating module includes silvered substrates, multiple die bond bowl, injection Bar and be fixed on LED wafer in die bond bowl, silvered substrates include circuit layer, insulating barrier and radiating from top to bottom successively Metal level, die bond bowl is opened on described circuit layer, and described circuit layer is divided into bulk, the two poles of the earth of LED wafer by injection bar It is connected with circuit layer by metal wire respectively, die bond bowl is filled by layer of silica gel, LED wafer is encapsulated in die bond bowl by layer of silica gel In.The silvered substrates of this kind of new MCOB light source are provided with insulating barrier, and insulating barrier has a strong impact on the radiating of LED chip.
Content of the invention
The present invention in order to overcome substrate processed complex high cost in MCOB encapsulating structure of the prior art, radiating effect, The deficiencies such as gold thread impact light emission rate, there is provided a kind of manufacturing process is simple, and light extraction efficiency is high, aluminium base LED of perfect heat-dissipating MCOB encapsulating structure.
To achieve these goals, the present invention adopts the following technical scheme that:
A kind of MCOB encapsulating structure of aluminium base LED, including aluminium base, some LED chips, a surface of described aluminium base sets There is one layer of fine and close pellumina, the outside of pellumina is provided with some glue rings being formed by colloid solidification, glue ring and aluminum oxide Film surrounds light cup, and the pellumina surface within positioned at glue ring is additionally provided with two exposed copper foil electrodes, and multiple LED chips pass through Gold thread is connected in series between copper foil electrode, and described LED chip is connected with aluminium base by heat-conducting glue, filling in described light cup There is fluorescent glue, the outside that the described pellumina on aluminium base surface is located at light cup is additionally provided with two main conducting end, each light cup Interior copper foil electrode is electrically connected with main conducting end by Copper Foil line.
Pellumina is directly obtained by aluminium base heated oxide, and pellumina is closely connected with aluminium base, difficult for drop-off, Pellumina has insulating properties, uses directly as insulating barrier, and conventional aluminium base insulating barrier is typically all the layer of PVC of peripheral hardware, The heat conduction system of PVC leads as 0.2-3 w/(m.k), and the thermal conductivity of aluminum oxide is 28-30 w/ (m.k) it is seen that the heat conduction of aluminum oxide Rate is more than 100 times of common insulating barrier, greatly improves the radiating efficiency of LED chip, in common MCOB encapsulating structure Need to hollow out in aluminium base, silver-plated make light cup, and the light cup in this structure is to be synthesized by pellumina and glue ring group, structure letter Single, convenient processing and manufacture, is greatly reduced processing cost, pellumina has in itself and has good reflection action, effectively Increased light emission rate;Light source in each light cup is connected in parallel in main conducting end, thus reducing each light cup to flow through LED core The electric current of piece, reduces LED chip heating.
Preferably, the outer surface of oxide-film outside the described cup positioned at light, the annular outboard face of aluminium base are provided with protection Film, described diaphragm is circuit board three-proofing coating film.Circuit board three-proofing coating film plays protection and makees to the pellumina on aluminium base surface With preventing aluminum oxide from making moist, peeling off.
Preferably, being provided with some radiating grooves with the opposite face of pellumina in described aluminium base.Aluminium base is dissipated with other When hot assembly connects, radiating groove can increase area of dissipation, contributes to radiating.
Preferably, its outer surface is the sphere of evagination after the fluorescent glue in light cup solidifies.
A kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in oxidation case so that the surface of aluminium base forms one layer of densification Pellumina, with two spherical detection heads to carrying out multigroup conductivity detection between two surface any two points of aluminium base, detection is closed After lattice, retaining the surface of aluminium base good insulation preformance, if processing arterial highway radiating groove on aluminium base another side, and polishing off this surface The pellumina at remaining position;
B. aluminium base wiring:Copper foil electrode, main conducting end, connection copper foil on relevant position cloth on the surface of good insulation preformance Electrode and the Copper Foil line of main conducting end;
C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and pre- with pellumina bonding by heat-conducting glue Positioning, is connected the gold thread at two ends in bonding equipment with copper foil electrode, is then placed in drying glue in baking box, setting baking temperature and when Between it is ensured that LED chip and aluminium base consolidate bonding;
D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in baking in baking box, sizing, shape Become light cup, limit the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Form fluorescence after fluorescent material is stirred with glue allotment Glue, then passes through automatic dispensing machine and fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base Anti- paint, send into baking box in baking, aging.
Preferably, in step d, sending into application of vacuum in vacuum tank after fluorescent material and glue cooperation stirring, extracting out glimmering The fluorescent glue after air allotment stirring in optical cement sends into application of vacuum in vacuum tank, extracts the stirring of fluorescent glue internal cause out and remains Air.
Therefore, the present invention has the advantages that:(1)Good heat conductivity, LED good heat dissipation effect, long service life; (2)Insulating barrier directly processes acquisition, process is simple by aluminium base, reduces cost;(3)Light cup is located at outside aluminium base, need not be in aluminium base On process light cup, be simple to manufacture, low cost;(4)In each light cup, LED chip, gold thread are rationally distributed, and light extraction efficiency is high.
Brief description
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is the light cup sectional view of the present invention.
In figure:Aluminium base 1 LED chip, 2 pellumina, 3 glue ring, 4 copper foil electrode, 5 gold thread, 6 fluorescent glue 7 is main Conducting end 8 Copper Foil line, 9 diaphragm, 10 radiating groove 11 light cup 34
Specific embodiment
The invention will be further described with reference to the accompanying drawings and detailed description:
A kind of MCOB encapsulating structure of aluminium base LED as depicted in figs. 1 and 2, including aluminium base 1, the upper surface of aluminium base 1 is provided with One layer of fine and close pellumina 3, this pellumina is to be directly over oxidation processes by aluminium base upper surface to obtain, pellumina 3 Outside be provided with some glue rings 4 being formed by colloid solidification, in the present embodiment, glue is equipped with two, two glue rings and pellumina Surround two single light cups 34, the pellumina surface within positioned at glue ring is additionally provided with two exposed copper foil electrodes 5, aluminium base The outside being located at light cup on the pellumina on surface is additionally provided with two main conducting end 8, and the copper foil electrode in each light cup passes through copper Tinsel cord 9 is electrically connected with main conducting end, is designed with one group of LED chip or multigroup LED chip, one group of LED chip in each light cup In each LED chip be connected between two copper foil electrodes or multigroup LED chip by gold thread(Every group of LED chip Internal individually LED chip series connection)It is connected in parallel between two copper foil electrodes, as shown in figure 1, passing through four groups of LED in the present embodiment Chip(Every group four single LED chips are in series)It is connected in parallel between copper foil electrode, each LED chip 2 passes through heat-conducting glue It is connected with aluminium base, in light cup 34, is filled with fluorescent glue 7, after the fluorescent glue solidification in light cup, its outer surface is the sphere of evagination;Position The outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base are provided with diaphragm 10, the diaphragm in the present embodiment For circuit board three-proofing coating film, circuit board three-proofing coating film carries out comprehensive covering protection to pellumina, prevents aluminum oxide from making moist, comes off Deng;Aluminium base lower surface is provided with some radiating grooves 11, and the center of aluminium base is provided with routing hole.
A kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in high-temperature oxydation case so that the surface of aluminium base forms one layer Fine and close pellumina, carries out multigroup conductivity detection with two spherical detection heads between two surface any two points of aluminium base, inspection After survey is qualified, retain the surface of aluminium base good insulation preformance, if arterial highway radiating groove is processed on aluminium base another side;B. aluminium base cloth Line:Copper foil electrode, main conducting end, connection copper foil electrode and main conducting end on relevant position cloth on the surface of good insulation preformance Copper Foil line;C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and predetermined with pellumina bonding by heat-conducting glue Position, is connected the gold thread at two ends in bonding equipment with copper foil electrode, is then placed in drying glue in baking box, sets baking temperature and time, Guarantee that LED chip consolidates bonding with aluminium base;D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in In baking box, baking, sizing, form light cup, limit the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Fluorescent material is adjusted with glue Join and form fluorescent glue after stirring, deployed fluorescent glue sends into application of vacuum in vacuum tank, extract the stirring of fluorescent glue internal cause out and residual The air staying, then passes through automatic dispensing machine and fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base Anti- paint, sends into baking in baking box, aging, finally carrying out luminous detection.Compared with the prior art, whole process is simple is a lot, Directly form pellumina by aluminium base oxidation processes and be used as insulating barrier, reduce technique, reduce cost, also greatly simultaneously Improve the thermal conductivity of aluminium base, pellumina, directly as the bottom of light cup, eliminates the silver-plated reflector layer of light cup bottom, enters one Step simplifies technique.Therefore, the present invention has the advantages that:(1)Good heat conductivity, LED good heat dissipation effect, service life Long;(2)Insulating barrier directly processes acquisition, process is simple by aluminium base, reduces cost;(3)Light cup is located at outside aluminium base, need not be in aluminium Light cup is processed on base, is simple to manufacture, low cost;(4)In each light cup, LED chip, gold thread are rationally distributed, and light extraction efficiency is high.

Claims (2)

1. a kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in high-temperature oxydation case so that the surface of aluminium base forms one layer of densification Pellumina, with two spherical detection heads to carrying out multigroup conductivity detection between two surface any two points of aluminium base, detection is closed After lattice, retaining the surface of aluminium base good insulation preformance, if processing arterial highway radiating groove on aluminium base another side, and polishing off this surface The pellumina at remaining position;
B. aluminium base wiring:Copper foil electrode, main conducting end, connection copper foil electrode on relevant position cloth on the surface of good insulation preformance Copper Foil line with main conducting end;
C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and by heat-conducting glue and pellumina bonding pre-determined bit, In bonding equipment, the gold thread at two ends is connected with copper foil electrode, is then placed in drying glue in baking box, set baking temperature and time it is ensured that LED chip consolidates bonding with aluminium base;
D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in baking in baking box, sizing, form light Cup, limits the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Form fluorescent glue, so after fluorescent material is stirred with glue allotment Pass through automatic dispensing machine afterwards fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three-proofing coating on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base, Send into baking box in baking, aging.
2. a kind of MCOB packaging technology of aluminium base LED as claimed in claim 1, is characterized in that, in step d, allotment stirring Fluorescent glue afterwards sends into application of vacuum in vacuum tank, the air extracted the stirring of fluorescent glue internal cause out and remain.
CN201410171833.4A 2014-04-28 2014-04-28 MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) Active CN104134745B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410171833.4A CN104134745B (en) 2014-04-28 2014-04-28 MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410171833.4A CN104134745B (en) 2014-04-28 2014-04-28 MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode)

Publications (2)

Publication Number Publication Date
CN104134745A CN104134745A (en) 2014-11-05
CN104134745B true CN104134745B (en) 2017-02-15

Family

ID=51807345

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410171833.4A Active CN104134745B (en) 2014-04-28 2014-04-28 MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode)

Country Status (1)

Country Link
CN (1) CN104134745B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117174696A (en) * 2022-05-27 2023-12-05 华为技术有限公司 Chip, preparation method, chip packaging assembly, packaging method and electronic equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201017896Y (en) * 2006-05-30 2008-02-06 杭州亿奥光电有限公司 Packaging structure of LED
CN201066696Y (en) * 2006-09-26 2008-05-28 蔡勇 Encapsulation structure for high-power LED chip and high-power LED lighting part
CN201407528Y (en) * 2009-05-07 2010-02-17 深圳市劲升迪龙科技发展有限公司 High-power LED lamp
CN201412704Y (en) * 2009-03-10 2010-02-24 广州南科集成电子有限公司 Light source of integrated LED chip
CN102110762A (en) * 2010-11-26 2011-06-29 陕西科技大学 Radiating device integrating radiating plate and electrode and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201017896Y (en) * 2006-05-30 2008-02-06 杭州亿奥光电有限公司 Packaging structure of LED
CN201066696Y (en) * 2006-09-26 2008-05-28 蔡勇 Encapsulation structure for high-power LED chip and high-power LED lighting part
CN201412704Y (en) * 2009-03-10 2010-02-24 广州南科集成电子有限公司 Light source of integrated LED chip
CN201407528Y (en) * 2009-05-07 2010-02-17 深圳市劲升迪龙科技发展有限公司 High-power LED lamp
CN102110762A (en) * 2010-11-26 2011-06-29 陕西科技大学 Radiating device integrating radiating plate and electrode and manufacturing method thereof

Also Published As

Publication number Publication date
CN104134745A (en) 2014-11-05

Similar Documents

Publication Publication Date Title
CN102610599B (en) Light emitting device packaging piece and manufacture method thereof
TWI528508B (en) Method for manufacturing ceramic package structure of high power light emitting diode
CN101997074A (en) LED (Light Emitting Diode) surface patch type encapsulating structure based on silicon base plate and encapsulating method thereof
CN201904369U (en) LED (light emitting diode) surface-mounting package structure based on silicon substrate
CN102610735B (en) Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device
US8735933B2 (en) Light emitting diode package and method of manufacturing the same
CN103094254A (en) Light-emitting diode module
CN103730565A (en) Aluminum nitride Chip On Board (COB) light-emitting diode (LED) light source and packaging method thereof
CN103545436B (en) Process for sapphire-based LED encapsulation structure and method for packing thereof
CN203503708U (en) Sapphire base LED encapsulation structure
US8716734B2 (en) Light emitting diode package having a portion of reflection cup material covering electrode layer on side surfaces of substrate
CN105070808B (en) A kind of polycrystalline LED support and its die-bonding method for improving luminous efficiency
CN104134745B (en) MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode)
US8828754B2 (en) Method for manufacturing LED
CN103956420A (en) LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder
CN103956356A (en) Efficient heat conducting large-power LED integration package structure
CN104576910B (en) The manufacture method of luminous semiconductor device
CN105609496A (en) High power density COB (Chip On Board) packaged white LED (Light Emitting Diode) module and packaging method thereof
CN106981555A (en) A kind of tazza high reliability purple LED packaging and its manufacture method
CN203674260U (en) LED packaging structure with ESD protection
CN103107264B (en) Integrated LED light source package support
CN203910864U (en) Aluminum-based MCOB packaging structure of LEDs
CN103855280A (en) LED wafer-level packaging method
US20170077369A1 (en) Light-emitting apparatus, illumination apparatus, and method of manufacturing light-emitting apparatus
CN102290504B (en) Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 312375 Shangyu City, Zhejiang Province on the Pu Industrial Zone

Applicant after: Shaoxing Boom Lighting Co., Ltd.

Address before: 312363 Pu Industrial Zone, Shangyu, Zhejiang, Shaoxing

Applicant before: SHANGYU BAOZHINENG LIGHTING ELECTRIC APPLIANCE CO., LTD.

COR Change of bibliographic data
C14 Grant of patent or utility model
GR01 Patent grant