CN104134745B - MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) - Google Patents
MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) Download PDFInfo
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- CN104134745B CN104134745B CN201410171833.4A CN201410171833A CN104134745B CN 104134745 B CN104134745 B CN 104134745B CN 201410171833 A CN201410171833 A CN 201410171833A CN 104134745 B CN104134745 B CN 104134745B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Abstract
The invention relates to the technical field of LED (Light Emitting Diode) packaging, and particularly discloses an MCOB (Multi-chips On Board) packaging structure of an aluminum base LED. The packaging structure comprises an aluminum base and a plurality of LED chips, wherein a dense alumina film is arranged on one surface of the aluminum base; a plurality of glue rings formed by colloid solidification are arranged on the outer side of the alumina film; light cups are defined by the glue rings and the alumina film; two exposed copper foil electrodes are arranged on the surface of the alumina film located in the glue rings; the LED chips are connected in series between the copper foil electrodes by gold wires, and connected with the aluminum base by heat-conducting glue; fluorescent glue is filled in the light cups; two main electricity-conducting ends are arranged on the outer sides of the light cups on the alumina film on the surface of the aluminum base; and the copper foil electrodes in the light cups are electrically connected with the main electricity-conducting ends by copper foil wires. The alumina film is directly obtained by oxidation treatment of the aluminum base to serve as an insulating layer, therefore, the packaging structure has the benefits that the packaging structure is simple in technology, good in heat dissipation performance and high in light emitting rate, and the manufacturing cost is lowered greatly.
Description
Technical field
The present invention relates to LED encapsulation technology field, the MCOB encapsulating structure of more particularly, to a kind of aluminium base LED and technique.
Background technology
With the development of LED illumination industry, present LED chip generally adopts COB to encapsulate, and COB encapsulation refers to that LED chip is straight
It is connected on whole substrate and carries out bonding encapsulation, on inner substrate, the succession of N number of chip is integrated and be packaged, main use
To solve the problems, such as small-power chip manufacturing high-powered LED lamp, can be radiated with dispersed chip, to improve light efficiency, improve LED simultaneously
Glare effect.COB pharosage is high, and the few light of dazzle is soft, and issue is an equally distributed smooth face, at present in ball
Bubble, shot-light, Down lamp, fluorescent lamp, street lamp, the light fixture such as bulkhead lamp is widely used.On the basis of COM encapsulation, occur now again
Various MCOB encapsulation, MCOB encapsulating structure has the characteristics that luminous efficiency is high, caloric value is little, and MCOB encapsulation is each chip
Individually load the radiating thus improving light extraction efficiency, strengthening LED chip in corresponding light cup.Common aluminium base MCOB encapsulation knot
In structure, it is all generally that aluminium base surface is dug out multiple pyramidal pits and formed multiple light cups, then LED chip is arranged on light cup bottom,
Aluminium base thermal conductivity is 271 ~ 320 w/(m.k), and insulating barrier thermal conductivity is 0.4 ~ 3.0 w/(m.k), for increased thermal conductivity energy,
Generally all it is not provided with insulating barrier in MCOB encapsulating structure, but in order to ensure the natural insulation between LED chip and aluminium base, LED
The gold thread that connects of chip is all that electrode is flip-chip mounted connection upper, and gold thread stretches out on the upside of LED chip will stop part light splitting
Source, thus reduce light emission rate;Go out small light cup in aluminium base Surface Machining, light cup bottom requires flat smooth, aluminium base adds simultaneously
Work required precision is high, therefore high processing costs.
Chinese patent Authorization Notice No.:CN202549929U, in authorized announcement date on November 21st, 2012, discloses a kind of height
The MCOB encapsulating structure of effect radiating, is provided with substrate on the region of reflector and is packaged with one layer of expansion arogel;Crystal grain is by encapsulating
Glue is encapsulated in reflector, is to expand arogel above packaging plastic;Crystal grain includes the LED chip of bipolar electrode, and LED chip passes through two
Electrode flip chip bonding on a silicon substrate, bores carbon-coating for class on a silicon substrate, and it is the gold bonding with the electrode of LED chip that class is bored on carbon-coating
Belong to solder layer, solder layer includes being connected respectively with two electrodes and mutual two parts disconnecting, and this two partly all by drawing
Line is connected with two chip electrodes being located at reflection rim of a cup respectively.There is no insulating barrier, LED chip is easily and aluminium in this structure
Base is short-circuited, simultaneously aluminium base high processing costs, and gold thread therefore can stop from upside and do not seal light, affects light emission rate;Again
As Authorization Notice No.:CN203071063U, authorized announcement date in July, 2013 No. 17, discloses a kind of new MCOB light source, including
Housing, setting illuminating module in the housing and circuit board, illuminating module includes silvered substrates, multiple die bond bowl, injection
Bar and be fixed on LED wafer in die bond bowl, silvered substrates include circuit layer, insulating barrier and radiating from top to bottom successively
Metal level, die bond bowl is opened on described circuit layer, and described circuit layer is divided into bulk, the two poles of the earth of LED wafer by injection bar
It is connected with circuit layer by metal wire respectively, die bond bowl is filled by layer of silica gel, LED wafer is encapsulated in die bond bowl by layer of silica gel
In.The silvered substrates of this kind of new MCOB light source are provided with insulating barrier, and insulating barrier has a strong impact on the radiating of LED chip.
Content of the invention
The present invention in order to overcome substrate processed complex high cost in MCOB encapsulating structure of the prior art, radiating effect,
The deficiencies such as gold thread impact light emission rate, there is provided a kind of manufacturing process is simple, and light extraction efficiency is high, aluminium base LED of perfect heat-dissipating
MCOB encapsulating structure.
To achieve these goals, the present invention adopts the following technical scheme that:
A kind of MCOB encapsulating structure of aluminium base LED, including aluminium base, some LED chips, a surface of described aluminium base sets
There is one layer of fine and close pellumina, the outside of pellumina is provided with some glue rings being formed by colloid solidification, glue ring and aluminum oxide
Film surrounds light cup, and the pellumina surface within positioned at glue ring is additionally provided with two exposed copper foil electrodes, and multiple LED chips pass through
Gold thread is connected in series between copper foil electrode, and described LED chip is connected with aluminium base by heat-conducting glue, filling in described light cup
There is fluorescent glue, the outside that the described pellumina on aluminium base surface is located at light cup is additionally provided with two main conducting end, each light cup
Interior copper foil electrode is electrically connected with main conducting end by Copper Foil line.
Pellumina is directly obtained by aluminium base heated oxide, and pellumina is closely connected with aluminium base, difficult for drop-off,
Pellumina has insulating properties, uses directly as insulating barrier, and conventional aluminium base insulating barrier is typically all the layer of PVC of peripheral hardware,
The heat conduction system of PVC leads as 0.2-3 w/(m.k), and the thermal conductivity of aluminum oxide is 28-30 w/ (m.k) it is seen that the heat conduction of aluminum oxide
Rate is more than 100 times of common insulating barrier, greatly improves the radiating efficiency of LED chip, in common MCOB encapsulating structure
Need to hollow out in aluminium base, silver-plated make light cup, and the light cup in this structure is to be synthesized by pellumina and glue ring group, structure letter
Single, convenient processing and manufacture, is greatly reduced processing cost, pellumina has in itself and has good reflection action, effectively
Increased light emission rate;Light source in each light cup is connected in parallel in main conducting end, thus reducing each light cup to flow through LED core
The electric current of piece, reduces LED chip heating.
Preferably, the outer surface of oxide-film outside the described cup positioned at light, the annular outboard face of aluminium base are provided with protection
Film, described diaphragm is circuit board three-proofing coating film.Circuit board three-proofing coating film plays protection and makees to the pellumina on aluminium base surface
With preventing aluminum oxide from making moist, peeling off.
Preferably, being provided with some radiating grooves with the opposite face of pellumina in described aluminium base.Aluminium base is dissipated with other
When hot assembly connects, radiating groove can increase area of dissipation, contributes to radiating.
Preferably, its outer surface is the sphere of evagination after the fluorescent glue in light cup solidifies.
A kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in oxidation case so that the surface of aluminium base forms one layer of densification
Pellumina, with two spherical detection heads to carrying out multigroup conductivity detection between two surface any two points of aluminium base, detection is closed
After lattice, retaining the surface of aluminium base good insulation preformance, if processing arterial highway radiating groove on aluminium base another side, and polishing off this surface
The pellumina at remaining position;
B. aluminium base wiring:Copper foil electrode, main conducting end, connection copper foil on relevant position cloth on the surface of good insulation preformance
Electrode and the Copper Foil line of main conducting end;
C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and pre- with pellumina bonding by heat-conducting glue
Positioning, is connected the gold thread at two ends in bonding equipment with copper foil electrode, is then placed in drying glue in baking box, setting baking temperature and when
Between it is ensured that LED chip and aluminium base consolidate bonding;
D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in baking in baking box, sizing, shape
Become light cup, limit the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Form fluorescence after fluorescent material is stirred with glue allotment
Glue, then passes through automatic dispensing machine and fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base
Anti- paint, send into baking box in baking, aging.
Preferably, in step d, sending into application of vacuum in vacuum tank after fluorescent material and glue cooperation stirring, extracting out glimmering
The fluorescent glue after air allotment stirring in optical cement sends into application of vacuum in vacuum tank, extracts the stirring of fluorescent glue internal cause out and remains
Air.
Therefore, the present invention has the advantages that:(1)Good heat conductivity, LED good heat dissipation effect, long service life;
(2)Insulating barrier directly processes acquisition, process is simple by aluminium base, reduces cost;(3)Light cup is located at outside aluminium base, need not be in aluminium base
On process light cup, be simple to manufacture, low cost;(4)In each light cup, LED chip, gold thread are rationally distributed, and light extraction efficiency is high.
Brief description
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is the light cup sectional view of the present invention.
In figure:Aluminium base 1 LED chip, 2 pellumina, 3 glue ring, 4 copper foil electrode, 5 gold thread, 6 fluorescent glue 7 is main
Conducting end 8 Copper Foil line, 9 diaphragm, 10 radiating groove 11 light cup 34
Specific embodiment
The invention will be further described with reference to the accompanying drawings and detailed description:
A kind of MCOB encapsulating structure of aluminium base LED as depicted in figs. 1 and 2, including aluminium base 1, the upper surface of aluminium base 1 is provided with
One layer of fine and close pellumina 3, this pellumina is to be directly over oxidation processes by aluminium base upper surface to obtain, pellumina 3
Outside be provided with some glue rings 4 being formed by colloid solidification, in the present embodiment, glue is equipped with two, two glue rings and pellumina
Surround two single light cups 34, the pellumina surface within positioned at glue ring is additionally provided with two exposed copper foil electrodes 5, aluminium base
The outside being located at light cup on the pellumina on surface is additionally provided with two main conducting end 8, and the copper foil electrode in each light cup passes through copper
Tinsel cord 9 is electrically connected with main conducting end, is designed with one group of LED chip or multigroup LED chip, one group of LED chip in each light cup
In each LED chip be connected between two copper foil electrodes or multigroup LED chip by gold thread(Every group of LED chip
Internal individually LED chip series connection)It is connected in parallel between two copper foil electrodes, as shown in figure 1, passing through four groups of LED in the present embodiment
Chip(Every group four single LED chips are in series)It is connected in parallel between copper foil electrode, each LED chip 2 passes through heat-conducting glue
It is connected with aluminium base, in light cup 34, is filled with fluorescent glue 7, after the fluorescent glue solidification in light cup, its outer surface is the sphere of evagination;Position
The outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base are provided with diaphragm 10, the diaphragm in the present embodiment
For circuit board three-proofing coating film, circuit board three-proofing coating film carries out comprehensive covering protection to pellumina, prevents aluminum oxide from making moist, comes off
Deng;Aluminium base lower surface is provided with some radiating grooves 11, and the center of aluminium base is provided with routing hole.
A kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in high-temperature oxydation case so that the surface of aluminium base forms one layer
Fine and close pellumina, carries out multigroup conductivity detection with two spherical detection heads between two surface any two points of aluminium base, inspection
After survey is qualified, retain the surface of aluminium base good insulation preformance, if arterial highway radiating groove is processed on aluminium base another side;B. aluminium base cloth
Line:Copper foil electrode, main conducting end, connection copper foil electrode and main conducting end on relevant position cloth on the surface of good insulation preformance
Copper Foil line;C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and predetermined with pellumina bonding by heat-conducting glue
Position, is connected the gold thread at two ends in bonding equipment with copper foil electrode, is then placed in drying glue in baking box, sets baking temperature and time,
Guarantee that LED chip consolidates bonding with aluminium base;D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in
In baking box, baking, sizing, form light cup, limit the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Fluorescent material is adjusted with glue
Join and form fluorescent glue after stirring, deployed fluorescent glue sends into application of vacuum in vacuum tank, extract the stirring of fluorescent glue internal cause out and residual
The air staying, then passes through automatic dispensing machine and fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base
Anti- paint, sends into baking in baking box, aging, finally carrying out luminous detection.Compared with the prior art, whole process is simple is a lot,
Directly form pellumina by aluminium base oxidation processes and be used as insulating barrier, reduce technique, reduce cost, also greatly simultaneously
Improve the thermal conductivity of aluminium base, pellumina, directly as the bottom of light cup, eliminates the silver-plated reflector layer of light cup bottom, enters one
Step simplifies technique.Therefore, the present invention has the advantages that:(1)Good heat conductivity, LED good heat dissipation effect, service life
Long;(2)Insulating barrier directly processes acquisition, process is simple by aluminium base, reduces cost;(3)Light cup is located at outside aluminium base, need not be in aluminium
Light cup is processed on base, is simple to manufacture, low cost;(4)In each light cup, LED chip, gold thread are rationally distributed, and light extraction efficiency is high.
Claims (2)
1. a kind of MCOB packaging technology of aluminium base LED, comprises the steps:
A. aluminium base is processed:Aluminium base is put into and carries out oxidation processes in high-temperature oxydation case so that the surface of aluminium base forms one layer of densification
Pellumina, with two spherical detection heads to carrying out multigroup conductivity detection between two surface any two points of aluminium base, detection is closed
After lattice, retaining the surface of aluminium base good insulation preformance, if processing arterial highway radiating groove on aluminium base another side, and polishing off this surface
The pellumina at remaining position;
B. aluminium base wiring:Copper foil electrode, main conducting end, connection copper foil electrode on relevant position cloth on the surface of good insulation preformance
Copper Foil line with main conducting end;
C. die bond bonding wire:Between LED chip, series connection is welded by gold thread, and by heat-conducting glue and pellumina bonding pre-determined bit,
In bonding equipment, the gold thread at two ends is connected with copper foil electrode, is then placed in drying glue in baking box, set baking temperature and time it is ensured that
LED chip consolidates bonding with aluminium base;
D. light cup formation:Surround a glue ring with glue around LED chip, be then placed in baking in baking box, sizing, form light
Cup, limits the light-emitting area of follow-up fluorescence simultaneously;Point fluorescent glue:Form fluorescent glue, so after fluorescent material is stirred with glue allotment
Pass through automatic dispensing machine afterwards fluorescent glue is injected in glue ring, send into baking molding in baking box;
E. apply protective paint:Coat circuit board three-proofing coating on the outer surface of the oxide-film outside light cup, the annular outboard face of aluminium base,
Send into baking box in baking, aging.
2. a kind of MCOB packaging technology of aluminium base LED as claimed in claim 1, is characterized in that, in step d, allotment stirring
Fluorescent glue afterwards sends into application of vacuum in vacuum tank, the air extracted the stirring of fluorescent glue internal cause out and remain.
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CN201410171833.4A CN104134745B (en) | 2014-04-28 | 2014-04-28 | MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) |
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CN104134745B true CN104134745B (en) | 2017-02-15 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201017896Y (en) * | 2006-05-30 | 2008-02-06 | 杭州亿奥光电有限公司 | Packaging structure of LED |
CN201066696Y (en) * | 2006-09-26 | 2008-05-28 | 蔡勇 | Encapsulation structure for high-power LED chip and high-power LED lighting part |
CN201407528Y (en) * | 2009-05-07 | 2010-02-17 | 深圳市劲升迪龙科技发展有限公司 | High-power LED lamp |
CN201412704Y (en) * | 2009-03-10 | 2010-02-24 | 广州南科集成电子有限公司 | Light source of integrated LED chip |
CN102110762A (en) * | 2010-11-26 | 2011-06-29 | 陕西科技大学 | Radiating device integrating radiating plate and electrode and manufacturing method thereof |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201017896Y (en) * | 2006-05-30 | 2008-02-06 | 杭州亿奥光电有限公司 | Packaging structure of LED |
CN201066696Y (en) * | 2006-09-26 | 2008-05-28 | 蔡勇 | Encapsulation structure for high-power LED chip and high-power LED lighting part |
CN201412704Y (en) * | 2009-03-10 | 2010-02-24 | 广州南科集成电子有限公司 | Light source of integrated LED chip |
CN201407528Y (en) * | 2009-05-07 | 2010-02-17 | 深圳市劲升迪龙科技发展有限公司 | High-power LED lamp |
CN102110762A (en) * | 2010-11-26 | 2011-06-29 | 陕西科技大学 | Radiating device integrating radiating plate and electrode and manufacturing method thereof |
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