CN102586761B - 用于原子层沉积的涡流室盖 - Google Patents

用于原子层沉积的涡流室盖 Download PDF

Info

Publication number: CN102586761B
Authority: CN; China
Prior art keywords: gas; substrate; approximately; road; chamber
Prior art date: 2006-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201210033178.7A

Other languages

English (en)

Chinese (zh)

Other versions

CN102586761A (zh

Inventor

吴典晔

庞尼特·巴贾

袁晓雄

史蒂文·H·金

舒伯特·S·楚

保罗·F·马

约瑟夫·F·奥布赫恩

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-10-24

Filing date

2007-10-24

Publication date

2014-10-15

2007-10-24 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2012-07-18 Publication of CN102586761A publication Critical patent/CN102586761A/zh

2014-10-15 Application granted granted Critical

2014-10-15 Publication of CN102586761B publication Critical patent/CN102586761B/zh

Status Active legal-status Critical Current

2027-10-24 Anticipated expiration legal-status Critical

Links

238000000231 atomic layer deposition Methods 0.000 title abstract 3
239000000758 substrate Substances 0.000 claims abstract description 492
238000000034 method Methods 0.000 claims abstract description 110
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239000004065 semiconductor Substances 0.000 claims description 7
238000000151 deposition Methods 0.000 abstract description 52
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238000010926 purge Methods 0.000 description 208
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238000000429 assembly Methods 0.000 description 39
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GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 34
239000012159 carrier gas Substances 0.000 description 29
239000012707 chemical precursor Substances 0.000 description 29
MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 29
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
229910052757 nitrogen Inorganic materials 0.000 description 25
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239000004411 aluminium Substances 0.000 description 22
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238000001179 sorption measurement Methods 0.000 description 6
239000010959 steel Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
OMFXVFTZEKFJBZ-HJTSIMOOSA-N corticosterone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@H](CC4)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OMFXVFTZEKFJBZ-HJTSIMOOSA-N 0.000 description 5
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239000002699 waste material Substances 0.000 description 4
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
239000012809 cooling fluid Substances 0.000 description 3
150000004985 diamines Chemical class 0.000 description 3
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239000003921 oil Substances 0.000 description 3
239000003960 organic solvent Substances 0.000 description 3
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OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
241001012508 Carpiodes cyprinus Species 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
229910021529 ammonia Inorganic materials 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000000903 blocking effect Effects 0.000 description 2
239000000460 chlorine Substances 0.000 description 2
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238000005516 engineering process Methods 0.000 description 2
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SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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239000012212 insulator Substances 0.000 description 2
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239000010453 quartz Substances 0.000 description 2
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230000000007 visual effect Effects 0.000 description 2
GEXJFIOPGAASTP-UHFFFAOYSA-N $l^{1}-azanylethane Chemical compound CC[N] GEXJFIOPGAASTP-UHFFFAOYSA-N 0.000 description 1
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
229910000577 Silicon-germanium Inorganic materials 0.000 description 1
UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
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GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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239000010974 bronze Substances 0.000 description 1
239000001273 butane Substances 0.000 description 1
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238000004140 cleaning Methods 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
125000004122 cyclic group Chemical group 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
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239000000428 dust Substances 0.000 description 1
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LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
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239000011737 fluorine Substances 0.000 description 1
125000001153 fluoro group Chemical group F* 0.000 description 1
239000012634 fragment Substances 0.000 description 1
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GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
239000010439 graphite Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
238000000227 grinding Methods 0.000 description 1
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VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
230000026030 halogenation Effects 0.000 description 1
238000005658 halogenation reaction Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000012528 membrane Substances 0.000 description 1
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238000006722 reduction reaction Methods 0.000 description 1
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229910052707 ruthenium Inorganic materials 0.000 description 1
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FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
238000006557 surface reaction Methods 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate

CN201210033178.7A 2006-10-24 2007-10-24 用于原子层沉积的涡流室盖 Active CN102586761B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US86276406P	2006-10-24	2006-10-24
US60/862,764		2006-10-24

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CN200780039651XA Division CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Publications (2)

Publication Number	Publication Date
CN102586761A CN102586761A (zh)	2012-07-18
CN102586761B true CN102586761B (zh)	2014-10-15

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CN200780039651XA Active CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033178.7A Active CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033172.XA Active CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

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CN200780039651XA Active CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

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CN201210033172.XA Active CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Country Status (4)

Country	Link
KR (3)	KR101448447B1 (sv)
CN (4)	CN101528973B (sv)
TW (2)	TWI410518B (sv)
WO (1)	WO2008052047A2 (sv)

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JP5889806B2 (ja) *	2010-03-12	2016-03-22	アプライドマテリアルズインコーポレイテッドＡｐｐｌｉｅｄＭａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ	複式噴射を伴う原子層堆積チャンバ
US9322097B2 (en)	2013-03-13	2016-04-26	Applied Materials, Inc.	EPI base ring
CN105027316B (zh)	2013-03-14	2018-07-17	应用材料公司	薄膜封装-用于oled应用的薄超高阻挡层
US9890456B2 (en) *	2014-08-21	2018-02-13	Asm Ip Holding B.V.	Method and system for in situ formation of gas-phase compounds
US9951421B2 (en) *	2014-12-10	2018-04-24	Lam Research Corporation	Inlet for effective mixing and purging
JP6487747B2 (ja) *	2015-03-26	2019-03-20	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置と処理ガス供給ノズル
FI128855B (sv) *	2019-09-24	2021-01-29	Picosun Oy	Fluiddistributionsanordning för en tunnfilmsdeponeringsutrustning, tillhörande utrustning och förfaranden

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CN1774525A (zh) *	2001-10-26	2006-05-17	应用材料有限公司	用于原子层淀积的气体输送装置

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KR20120048685A (ko)	2012-05-15
TWI476297B (zh)	2015-03-11
CN104073778B (zh)	2017-08-25
CN101528973A (zh)	2009-09-09
CN102586760B (zh)	2016-07-06
WO2008052047A3 (en)	2008-12-11
TW201241228A (en)	2012-10-16
CN101528973B (zh)	2012-04-25
KR101432257B1 (ko)	2014-08-21
KR20090083404A (ko)	2009-08-03
KR20140009593A (ko)	2014-01-22
CN104073778A (zh)	2014-10-01
WO2008052047A2 (en)	2008-05-02
CN102586760A (zh)	2012-07-18
TWI410518B (zh)	2013-10-01
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