CN102586760B - 用于原子层沉积的涡流室盖 - Google Patents

用于原子层沉积的涡流室盖 Download PDF

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Publication number: CN102586760B
Authority: CN; China
Prior art keywords: gas; chamber; substrate; expanding channel; cap assembly
Prior art date: 2006-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201210033172.XA

Other languages

English (en)

Chinese (zh)

Other versions

CN102586760A (zh

Inventor

吴典晔

庞尼特·巴贾

袁晓雄

史蒂文·H·金

舒伯特·S·楚

保罗·F·马

约瑟夫·F·奥布赫恩

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-10-24

Filing date

2007-10-24

Publication date

2016-07-06

2007-10-24 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2012-07-18 Publication of CN102586760A publication Critical patent/CN102586760A/zh

2016-07-06 Application granted granted Critical

2016-07-06 Publication of CN102586760B publication Critical patent/CN102586760B/zh

Status Active legal-status Critical Current

2027-10-24 Anticipated expiration legal-status Critical

Links

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239000012530 fluid Substances 0.000 claims description 76
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GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 35
MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 29
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241001012508 Carpiodes cyprinus Species 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
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ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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238000000137 annealing Methods 0.000 description 1
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FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000007480 spreading Effects 0.000 description 1
238000006557 surface reaction Methods 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1
230000000007 visual effect Effects 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate

CN201210033172.XA 2006-10-24 2007-10-24 用于原子层沉积的涡流室盖 Active CN102586760B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US86276406P	2006-10-24	2006-10-24
US60/862,764		2006-10-24

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CN200780039651XA Division CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Publications (2)

Publication Number	Publication Date
CN102586760A CN102586760A (zh)	2012-07-18
CN102586760B true CN102586760B (zh)	2016-07-06

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ID=39325378

Family Applications (4)

Application Number	Title	Priority Date	Filing Date
CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033172.XA Active CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033178.7A Active CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN200780039651XA Active CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Family Applications Before (1)

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CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Family Applications After (2)

Application Number	Title	Priority Date	Filing Date
CN201210033178.7A Active CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN200780039651XA Active CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Country Status (4)

Country	Link
KR (3)	KR101448447B1 (sv)
CN (4)	CN104073778B (sv)
TW (2)	TWI476297B (sv)
WO (1)	WO2008052047A2 (sv)

Families Citing this family (7)

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Publication number	Priority date	Publication date	Assignee	Title
CN102762767B (zh)	2010-03-12	2015-11-25	应用材料公司	具有多重注射道的原子层沉积腔室
US9322097B2 (en)	2013-03-13	2016-04-26	Applied Materials, Inc.	EPI base ring
KR101701257B1 (ko)	2013-03-14	2017-02-01	어플라이드 머티어리얼스, 인코포레이티드	박막 캡슐화 ― ｏｌｅｄ 어플리케이션을 위한 얇은 초고 배리어 층
US9890456B2 (en) *	2014-08-21	2018-02-13	Asm Ip Holding B.V.	Method and system for in situ formation of gas-phase compounds
US9951421B2 (en) *	2014-12-10	2018-04-24	Lam Research Corporation	Inlet for effective mixing and purging
JP6487747B2 (ja)	2015-03-26	2019-03-20	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置と処理ガス供給ノズル
FI128855B (sv) *	2019-09-24	2021-01-29	Picosun Oy	Fluiddistributionsanordning för en tunnfilmsdeponeringsutrustning, tillhörande utrustning och förfaranden

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1210902A (zh) *	1997-06-26	1999-03-17	通用电气公司	用于电弧等离子体沉积设备的喷嘴式喷射器
CN1774525A (zh) *	2001-10-26	2006-05-17	应用材料有限公司	用于原子层淀积的气体输送装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
AUPO129096A0 (en) *	1996-07-26	1996-08-22	Boc Gases Australia Limited	Oxygen dissolver for pipelines or pipe outlets
US5951771A (en) *	1996-09-30	1999-09-14	Celestech, Inc.	Plasma jet system
NO309625B1 (no) *	1997-10-10	2001-02-26	V Telemark Bedriftsraa Waskaas	Fremgangsmåte for reduksjon av strömningsmotstand i rör- og kanalströmning
US6495233B1 (en) *	1999-07-09	2002-12-17	Applied Materials, Inc.	Apparatus for distributing gases in a chemical vapor deposition system
KR100319494B1 (ko) *	1999-07-15	2002-01-09	김용일	원자층 에피택시 공정을 위한 반도체 박막 증착장치
US6477980B1 (en) *	2000-01-20	2002-11-12	Applied Materials, Inc.	Flexibly suspended gas distribution manifold for plasma chamber
US6818250B2 (en) *	2000-06-29	2004-11-16	The Regents Of The University Of Colorado	Method for forming SIO2 by chemical vapor deposition at room temperature
US6734020B2 (en) *	2001-03-07	2004-05-11	Applied Materials, Inc.	Valve control system for atomic layer deposition chamber
US6632325B2 (en) *	2002-02-07	2003-10-14	Applied Materials, Inc.	Article for use in a semiconductor processing chamber and method of fabricating same
US20060021574A1 (en) *	2004-08-02	2006-02-02	Veeco Instruments Inc.	Multi-gas distribution injector for chemical vapor deposition reactors
US7722719B2 (en) *	2005-03-07	2010-05-25	Applied Materials, Inc.	Gas baffle and distributor for semiconductor processing chamber

2007
- 2007-10-24 WO PCT/US2007/082369 patent/WO2008052047A2/en active Application Filing
- 2007-10-24 CN CN201410196103.XA patent/CN104073778B/zh active Active
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1210902A (zh) *	1997-06-26	1999-03-17	通用电气公司	用于电弧等离子体沉积设备的喷嘴式喷射器
CN1774525A (zh) *	2001-10-26	2006-05-17	应用材料有限公司	用于原子层淀积的气体输送装置

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TWI476297B (zh)	2015-03-11
KR20090083404A (ko)	2009-08-03
TWI410518B (zh)	2013-10-01
WO2008052047A3 (en)	2008-12-11
KR101448447B1 (ko)	2014-10-13
KR20140009593A (ko)	2014-01-22
CN104073778A (zh)	2014-10-01
TW201241228A (en)	2012-10-16
CN102586761A (zh)	2012-07-18
KR20120048685A (ko)	2012-05-15
KR101432257B1 (ko)	2014-08-21
TW200833867A (en)	2008-08-16
CN104073778B (zh)	2017-08-25
CN101528973B (zh)	2012-04-25
CN102586761B (zh)	2014-10-15
CN102586760A (zh)	2012-07-18
WO2008052047A2 (en)	2008-05-02
CN101528973A (zh)	2009-09-09

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