CN102117778B - Method for improving reliability of SONOS memory by utilizing ozone oxidation - Google Patents
Method for improving reliability of SONOS memory by utilizing ozone oxidation Download PDFInfo
- Publication number
- CN102117778B CN102117778B CN 201010027211 CN201010027211A CN102117778B CN 102117778 B CN102117778 B CN 102117778B CN 201010027211 CN201010027211 CN 201010027211 CN 201010027211 A CN201010027211 A CN 201010027211A CN 102117778 B CN102117778 B CN 102117778B
- Authority
- CN
- China
- Prior art keywords
- silicon oxynitride
- silicon
- 1sccm
- ozone
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a method for improving the reliability of an SONOS (Silicon Oxide Nitride Oxide Silicon) memory by utilizing ozone oxidation, which comprises the following steps of: firstly, growing a tunneling oxide layer on a silicon substrate; secondly, growing a silicon oxynitride trap layer on the tunneling oxide layer, simultaneously conducting oxide doping on the silicon oxynitride trap layer by ozone, and forming a silicon oxynitride mixture to be used as medium of a storage charge; and thirdly, growing a high-temperature thermal oxide layer on the silicon oxynitride trap layer. The method for improving the reliability of the SONOS memory conducting oxide doping on the intermediate nitride layer of an ONO layer so as to adjust the in-plane uniformity of oxygen content of the formed silicon oxynitride mixture, thus improving the in-plane uniformity of the reliability of the SONOS memory.
Description
Technical field
The invention belongs to semiconductor integrated circuit and make the field, relate in particular to a kind of method of utilizing ozone oxidation to promote SONOS flush memory device reliability.
Background technology
SONOS flush memory device (with the flush memory device of silicon nitride as charge storage media) becomes one of at present main flash type because possess good scaled down characteristic and radiation-resisting performance.The SONOS flush memory device has possessed lot of advantages, but also is faced with many problems on using.The problem relevant with SONOS flush memory device reliability mainly contains two: the one, Endurance (durable) characteristic, weigh exactly the SONOS device after program/erase repeatedly, the degeneration that the device property aspect is possible.The 2nd, Data Retention (data maintenance) characteristic is exactly the data hold capacity of SONOS device.Because the nitrogen oxide layer is mainly used in stored charge in the SONOS device, and therefore how much directly being controlled by this layer nitrogen oxide layer with the degree of depth of storage energy level of stored charge will directly determine the result of reliability for the stored charge ability of this layer nitrogen oxide layer and the improvement of internal homogeneity.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of utilizing ozone oxidation to promote SONOS flush memory device reliability, and the method utilizes ozone to replace N to the middle nitration case of ONO layer
2O gas carries out oxidation and mixes, is adjusted so that form the internal homogeneity of the oxygen content of silicon oxynitride mixture, thus the internal homogeneity of raising SONOS flush memory device reliability.
For solving the problems of the technologies described above, the invention provides a kind of method of utilizing ozone oxidation to promote SONOS flush memory device reliability, comprise the steps:
The first step is at the silicon substrate tunnel oxide of growing;
Second step at tunnel oxide growth silicon oxynitride trap layer, and carries out oxidation with ozone to this silicon oxynitride trap layer simultaneously and mixes, and forms the silicon oxynitride mixture, as the medium of stored charge;
The 3rd step is at the silicon oxynitride trap layer thermal oxide of growing.
Be compared with existing technology, the present invention has following beneficial effect: the present invention is a kind of by utilizing ozone to replace N
2The O oxidation mixes to promote the method for SONOS flush memory device reliability internal homogeneity.By when growing ONO (silicon oxide/silicon nitride/silicon oxide) rete, utilize ozone to replace N to middle nitration case
2O gas carries out oxidation and mixes, thereby improves the internal homogeneity of SONOS flush memory device reliability.Technique of the present invention is fairly simple, is easy to integratedly, can be used for batch production.
Description of drawings
Fig. 1 is process chart of the present invention; Wherein, Figure 1A is the sectional view of SONOS flush memory device after the first step of the present invention is finished; Figure 1B is the sectional view of SONOS flush memory device after second step of the present invention is finished; Fig. 1 C is the sectional view of SONOS flush memory device after the present invention finished in the 3rd step.Wherein, 1 is silicon substrate, and 2 is tunnel oxide, and 3 is silicon oxynitride trap layer, and 4 is thermal oxide.
Fig. 2 is N
2Reliable life distributes and contrasts schematic diagram in the silicon chip face that O gas increases and minimizing is tested;
Fig. 3 is the equipment schematic diagram that the present invention adopts, wherein, the 11st, type of furnace pipe, the 12nd, brilliant boat, the 13rd, ozone generator, the 14th, mass-flow gas meter (MFC).
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The present invention is a kind of by utilizing ozone to replace N
2The O oxidation mixes to promote the method for SONOS flush memory device reliability internal homogeneity.By when growing ONO (silicon oxide/silicon nitride/silicon oxide) rete, utilize ozone to replace N to middle nitration case
2O gas carries out oxidation and mixes, thereby so that form the internal homogeneity of the oxygen content of silicon oxynitride mixture and be adjusted, thereby so that the trap quantity in the nitration case is more balanced, thereby improve the internal homogeneity of SONOS flush memory device reliability.
The main technological process of the present invention comprises the steps (such as Fig. 1):
The first step is shown in Figure 1A, at silicon substrate 1 growth tunnel oxide 2.This step adopts the low-voltage high-temperature thermal oxidation technology, and pressure is controlled to be 1mtorr～760torr, and oxygen flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃.
Second step as shown in Figure 1B, at tunnel oxide 2 growth silicon oxynitride trap layers 3, and is used ozone (O simultaneously
3) silicon oxynitride trap layer 3 is carried out the oxidation doping, form the silicon oxynitride mixture, as the medium of stored charge.This step adopts conventional low-pressure chemical vapor phase deposition technique growth silicon oxynitride trap layer 3, and pressure is controlled to be 1mtorr～760torr, and DCS (dichloro-dihydro silicon) flow is 1sccm～10ml, and ammonia flow is 1sccm～10ml, O
3Flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃.This step utilizes ozone to replace N
2O gas carries out oxidation and mixes, and the ozone molecule formula is O3, is the allotrope of oxygen, and molecular structure is triangular in shape, is a kind of strong oxidizer, and the oxidation-reduction potential in the water is 2.07V.Usually the ozone generator by the work of electrolysis principle prepares ozone at the scene.The equipment that this step adopts, transform by the low-pressure chemical vapor phase deposition equipment to routine, add ozone generator and corresponding auxiliary equipment, as shown in Figure 3, this equipment comprises conventional low-pressure chemical vapor phase deposition equipment and ozone generator 13, this low-pressure chemical vapor phase deposition equipment comprises type of furnace pipe 11 and brilliant boat 12, this ozone generator 13 links to each other with the entrance of this low-pressure chemical vapor phase deposition equipment, the entrance of this low-pressure chemical vapor phase deposition equipment also passes into DCS, NH3 and N2 gas, is separately installed with mass-flow gas meter 14 at each gas pipeline.Pass into the chemical gas of corresponding discharge to type of furnace pipe 11 according to program setting when carrying out the chemical vapor deposition reaction, chemical reaction at high temperature occurs become film, simultaneously accessory substance and not the chemical gas of complete reaction (the better simultaneous reactions efficient of the particle performance of low-pressure chemical vapor phase deposition is low than synthesis under normal pressure) via the outlet combustion gas of equipment to follow-up gas sampling processing unit.The decomposition temperature of ozone low (surpass 270 degrees centigrade can very fast decomposition) is with respect to N
2The pyrolysis of O can be so that the internal homogeneity of the oxygen content of the silicon oxynitride mixture that forms be adjusted, thereby so that the trap quantity of 3 li on silicon oxynitride trap layer is more balanced, thereby improve the internal homogeneity of SONOS flush memory device reliability.
The 3rd step is shown in Fig. 1 C, at silicon oxynitride trap layer 3 growth thermal oxide 4.This step adopts low-pressure chemical vapor phase deposition technique, and pressure is controlled to be 1mtorr～760torr, and DCS (dichloro-dihydro silicon) flow is 1sccm～10ml, N
2The O flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃.
Said structure, technological parameter need to be optimized adjustment according to corresponding control and production capacity.
The present invention utilizes ozone to replace N by when growing ONO (silicon oxide/silicon nitride/silicon oxide) rete to middle nitration case
2O gas carries out oxidation and mixes, thereby so that the internal homogeneity of the oxygen content of the silicon oxynitride mixture that forms be adjusted.N as seen from Figure 2
2Therefore what of O gas select a kind of distribution problem that has the oxygen-doped method that distributes in the better face can better solve reliable life in the face to the obvious impact of being distributed with of final reliable life.Because the effective charge trap what the oxygen content in the nitrogen oxide layer determined, so the adjustment of silicon oxynitride internal homogeneity is so that the trap quantity in the nitration case is that the charge storage number is more balanced, thereby improves the internal homogeneity of SONOS flush memory device reliability.
Claims (4)
1. a method of utilizing ozone oxidation to promote SONOS flush memory device reliability is characterized in that, comprises the steps:
The first step is at the silicon substrate tunnel oxide of growing;
Second step at tunnel oxide growth silicon oxynitride trap layer, and carries out oxidation with ozone to this silicon oxynitride trap layer simultaneously and mixes, and forms the silicon oxynitride mixture, as the medium of stored charge; Adopt low-pressure chemical vapor phase deposition technique growth silicon oxynitride trap layer, pressure is controlled to be 1mtorr～760torr, and dichloro-dihydro silicon flow is 1sccm～10ml, and ammonia flow is 1sccm～10ml, the ozone flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃;
The 3rd step is at the silicon oxynitride trap layer thermal oxide of growing.
2. the method for utilizing ozone oxidation to promote SONOS flush memory device reliability as claimed in claim 1, it is characterized in that the first step adopts the low-voltage high-temperature thermal oxidation technology, pressure is controlled to be 1mtorr～760torr, oxygen flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃.
3. the method for utilizing ozone oxidation to promote SONOS flush memory device reliability as claimed in claim 1, it is characterized in that the 3rd step was adopted low-pressure chemical vapor phase deposition technique, pressure is controlled to be 1mtorr～760torr, dichloro-dihydro silicon flow is 1sccm～10ml, N
2The O flow is 1sccm～10ml, and temperature is controlled to be 400 ℃～1200 ℃.
4. the method for utilizing ozone oxidation to promote SONOS flush memory device reliability as claimed in claim 1, it is characterized in that, the equipment that adopts in the second step comprises conventional low-pressure chemical vapor phase deposition equipment and ozone generator, and this ozone generator links to each other with the entrance of this low-pressure chemical vapor phase deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010027211 CN102117778B (en) | 2010-01-05 | 2010-01-05 | Method for improving reliability of SONOS memory by utilizing ozone oxidation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010027211 CN102117778B (en) | 2010-01-05 | 2010-01-05 | Method for improving reliability of SONOS memory by utilizing ozone oxidation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102117778A CN102117778A (en) | 2011-07-06 |
| CN102117778B true CN102117778B (en) | 2013-03-13 |
Family
ID=44216467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010027211 Active CN102117778B (en) | 2010-01-05 | 2010-01-05 | Method for improving reliability of SONOS memory by utilizing ozone oxidation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102117778B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446964B (en) * | 2011-11-08 | 2015-08-19 | 上海华力微电子有限公司 | By the ONO structure and preparation method thereof of DPN silicon oxynitride as SONOS storage medium layer |
| CN108335988A (en) * | 2018-02-12 | 2018-07-27 | 无锡中微晶园电子有限公司 | A kind of production method of silicon capacitance |
| CN110676325B (en) * | 2019-09-06 | 2023-10-10 | 长江存储科技有限责任公司 | Semiconductor structure and manufacturing process thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011725A (en) * | 1997-08-01 | 2000-01-04 | Saifun Semiconductors, Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| CN1423338A (en) * | 2001-12-05 | 2003-06-11 | 旺宏电子股份有限公司 | Non-volatile memory assembly with multiple gate-pole insalation layers |
| CN1822375A (en) * | 2004-12-30 | 2006-08-23 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| CN101132007A (en) * | 2006-08-23 | 2008-02-27 | 东部高科股份有限公司 | Flash memory device and manufacturing method thereof |
| CN101330013A (en) * | 2007-06-21 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing tunneling oxide layer and flash memory |
| CN101452964A (en) * | 2005-08-04 | 2009-06-10 | 旺宏电子股份有限公司 | Non-volatile memory device having a silicon-nitride and silicon oxide top dielectric layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6605840B1 (en) * | 2002-02-07 | 2003-08-12 | Ching-Yuan Wu | Scalable multi-bit flash memory cell and its memory array |
| KR100562743B1 (en) * | 2003-10-06 | 2006-03-21 | 동부아남반도체 주식회사 | Method for fabricating flash memory device |
-
2010
- 2010-01-05 CN CN 201010027211 patent/CN102117778B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011725A (en) * | 1997-08-01 | 2000-01-04 | Saifun Semiconductors, Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| CN1423338A (en) * | 2001-12-05 | 2003-06-11 | 旺宏电子股份有限公司 | Non-volatile memory assembly with multiple gate-pole insalation layers |
| CN1822375A (en) * | 2004-12-30 | 2006-08-23 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| CN101452964A (en) * | 2005-08-04 | 2009-06-10 | 旺宏电子股份有限公司 | Non-volatile memory device having a silicon-nitride and silicon oxide top dielectric layer |
| CN101132007A (en) * | 2006-08-23 | 2008-02-27 | 东部高科股份有限公司 | Flash memory device and manufacturing method thereof |
| CN101330013A (en) * | 2007-06-21 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing tunneling oxide layer and flash memory |
Non-Patent Citations (6)
| Title |
|---|
| Hang-Ting Lue,et al..Reliability model of bandgap engineered SONOS（BE-SONOS）.《Electron Devices Meeting》.2006, * |
| Min-Ta Wu,et al..Study of the band-to-band tunneling hot-electron(BBHE)programming characteristics of p-channel bandgap-engineered SONOS(BE-SONOS).《IEEE Transact.on Electron Devices》.2007, |
| Reliability and processing effects of bandgap engineered SONOS (BE-SONOS)flash memory;Szu-Yu Wang,et al.;《IEEE 45th annual international reliability physics symposium》;20071231;全文 * |
| Study of the band-to-band tunneling hot-electron(BBHE)programming characteristics of p-channel bandgap-engineered SONOS(BE-SONOS);Min-Ta Wu,et al.;《IEEE Transact.on Electron Devices》;20070430;全文 * |
| Szu-Yu Wang,et al..Reliability and processing effects of bandgap engineered SONOS (BE-SONOS)flash memory.《IEEE 45th annual international reliability physics symposium》.2007, |
| 王延峰，刘忠立.离子注入氮化薄SiO2栅介质的特性.《半导体学报》.2001, * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102117778A (en) | 2011-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6461949B1 (en) | Method for fabricating a nitride read-only-memory (NROM) | |
| US10153262B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN101645399B (en) | Voltage stabilizing diode manufacturing process | |
| CN102117778B (en) | Method for improving reliability of SONOS memory by utilizing ozone oxidation | |
| CN101558481A (en) | Radical oxidation process for fabricating a nonvolatile charge trap memory device | |
| CN101866851A (en) | Oxidizing layer manufacture method | |
| CN102260860B (en) | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure | |
| JPH0548631B2 (en) | ||
| CN102005415A (en) | Method for improving reliability of SONOS flash memory | |
| CN100587926C (en) | Method of fabricating non-volatile memory element | |
| CN110098323A (en) | A kind of low-power consumption silicon nitride tunnel junctions resistance-variable storing device and preparation method thereof | |
| CN103066023A (en) | Method for improving reliability performance of silicon oxide nitride oxide silicon (SONOS) memorizer | |
| CN102376555B (en) | Method for improving reliability of SONOS (Silicon Oxide Nitride Oxide Semiconductor) by oxidizing ON film as tunneling dielectric medium | |
| CN102017085A (en) | Method for depositing of ultra fine grain poly silicon thin film | |
| CN103633030A (en) | Method for improving in-plane uniformity of reliability of SONOS flash device | |
| CN100472725C (en) | Methods for reducing wordline sheet resistance | |
| CN101335306B (en) | Silicone oxide non-volatile memory unit ultra-high in silicone and manufacturing method therefor | |
| CN104465353A (en) | Method for preparing ONO medium layer | |
| CN102446861B (en) | Method for increasing erasing and writing speed of SONOS (silicon oxide nitride oxide semiconductor) with utilization of selective silicon carbide epitaxy | |
| CN100490099C (en) | Method for making floating gate discharging sharp angle | |
| CN110165047A (en) | A kind of high density nano-silicon resistance-variable storing device and preparation method thereof | |
| CN1674237A (en) | Semiconductor device and apparatus for fabricating the same | |
| CN103715301A (en) | High efficiency diffusion method | |
| CN104681492B (en) | Flash memory unit forming method | |
| CN102016115B (en) | Method for depositing ultra fine crystal particle polysilicon thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |