CN102110762A - Radiating device integrating radiating plate and electrode and manufacturing method thereof - Google Patents
Radiating device integrating radiating plate and electrode and manufacturing method thereof Download PDFInfo
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- CN102110762A CN102110762A CN 201010561114 CN201010561114A CN102110762A CN 102110762 A CN102110762 A CN 102110762A CN 201010561114 CN201010561114 CN 201010561114 CN 201010561114 A CN201010561114 A CN 201010561114A CN 102110762 A CN102110762 A CN 102110762A
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Abstract
The invention discloses a radiating device integrating a radiating plate and an electrode and a manufacturing method thereof. The radiating device comprises the radiating plate (1), a light-emitting diode (LED) chip (2) fixed onto the radiating plate (1), a fluorescent powder layer (3) coated on the radiating plate (1) and totally covering the LED chip (2), a silica gel sealing layer (4) coated on the fluorescent powder layer (3), an electrode pin (5) integrated on the radiating plate and an electrode lead (6) leaded from the electrode pin (5), wherein the silica gel sealing layer (4) is made by mixing silica gel and nanometer or silica and micrometer particles. In the radiating device provided by the invention, the radiating plate is directly connected with the electrode pin, thereby improving the radiating efficiency of the chip and solving the problem of short service life of the device due to radiation problem; moreover, due to the elimination of bracket, the production cost is reduced and the invention is more favorable for commercial production.
Description
Technical field
The present invention relates to a kind of radiating element, particularly a kind of collecting and distributing hot plate and electrode are in radiating element of one and preparation method thereof.
Background technology
LED is considered to a kind of novel cold light source of tool development prospect of 21 century, and the LED industry is to be considered to have one of industry of development potentiality most in recent years, and everybody expects that LED can enter general lighting market, becomes new lighting source.Along with the initiation of Copenhagen meeting and low-carbon economy subject under discussion, LED will enter general lighting market on a large scale, and its economic output value is above 10,000,000,000 dollars.LED is a kind of solid-state semiconductor device, it can directly be converted into light to electricity, be that more satisfactory light source removes to replace traditional light source, it has purposes and numerous advantage widely, as: volume is little, power consumption is low, long service life, high brightness, low in calories, environmental protection, energy-conservation, sturdy and durable etc.
The luminescence mechanism of LED is can band-to-band transition produce luminous energy by the electronics in the PN junction, when it under the extra electric field effect, the radiation recombination generation electricity in electronics and hole is made to use part energy is converted into luminous energy, and the concussion of the lattice of radiationless compound generation is a heat energy with remaining Conversion of energy.
Heat radiation is an importance of restriction LED lighting development, because LED belongs to light emitting semiconductor device, and semiconductor device is along with self variation of temperature, and its characteristic has obvious variation.For LED, the rising of junction temperature can cause device various aspects changes of properties and decay.The theoretical life-span of LED can reach more than 100,000 hours, in actual the use, the junction temperature of LED is generally all than higher, 70% LED component failure causes by temperature is too high, 10 ℃ of the every risings of junction temperature, the life-span of LED will reduce half, therefore, solve the LED heat dissipation problem and be the primary study aspect that LED can industrialization.
Summary of the invention
Technical problem to be solved by this invention provides a kind of collecting and distributing hot plate and electrode in radiating element of one and preparation method thereof, and it is bad to solve the chip cooling effect, the problem that useful life is too short.
For achieving the above object, the invention provides a kind of collecting and distributing hot plate and electrode in the radiating element of one, comprise heating panel, be fixed on led chip on the heating panel, be coated on the heating panel and cover fully led chip phosphor powder layer, be coated in the silica gel encapsulated layer on the phosphor powder layer, be integrated in the electrode pin on the heating panel, and the self-electrode pin contact conductor of drawing, wherein, the electrode pin of chip directly links to each other with heating panel.
According to above-mentioned radiating element, the present invention also provides a kind of collecting and distributing backing and electrode in the preparation method of the radiating element of one, with point gum machine chip and electrode pin is fixed on the heating panel; Well contact forming between led chip and the electrode pin with ultrasonic gold wire bonder; On heating panel, apply phosphor powder layer, make phosphor powder layer cover led chip fully; At last, on phosphor powder layer, apply silica gel encapsulated layer or load onto shell.
The present invention compared with prior art, at least have the following advantages: the present invention is integrated in one fin and electrode, increased the heat radiation of chip better, improved the useful life of chip, because directly with on the chip electrode package to heat sink, thereby saved support, reduced cost, the arranging flexibly of the flexible design of fin, chip, thus guaranteeing the situation preferably of dispelling the heat, increasing the service life makes its product design more attractive in appearance, satisfies user's demand.Simultaneously in packaging plastic, added nanometer or micro particles, thereby enlarged the angle of divergence, increased light-emitting area, made light softer, bright.
Description of drawings
Fig. 1 is the structural representation of radiating element of the present invention;
Fig. 2 is the part partial enlarged drawing of Fig. 1.
Wherein, 1 is heating panel, and 2 is led chip, and 3 is phosphor powder layer, and 4 is the silica gel encapsulated layer, and 5 is electrode pin, and 6 is contact conductor.
Embodiment
Below in conjunction with accompanying drawing the present invention is done detailed description:
As shown in Figure 1, 2, collecting and distributing hot plate of the present invention and electrode comprise in the radiating element of one: heating panel 1, be fixed on led chip 2 on the heating panel 1, be coated on the heating panel 1 and cover fully led chip 2 phosphor powder layer 3, be coated in the silica gel encapsulated layer 4 on the phosphor powder layer 3, be integrated in the electrode pin 5 on the heating panel 1, and self-electrode pin 5 contact conductor 6 of drawing.
Described led chip 2 connects by modes such as bonding wire series, parallel or series-parallel connections, and is fixed on the heating panel 1.
Described phosphor powder layer 3 is coated on the heating panel 1, and covers led chip 2.
Described silica gel encapsulated layer 4 is mixed by silica gel and nanometer or micro particles, and wherein, the mass ratio of silica gel and nanometer or micro particles is 1: 3~3: 1, can increase luminous area, increases the angle of departure, simultaneously, makes light become soft, and has good uniformity; Silica gel encapsulated layer 4 covers on 3 layers in the fluorescent material, and the edge of silica gel encapsulated layer 4 is a bit larger tham the edge of phosphor powder layer 3.
Described electrode pin 5 directly is integrated on the heating panel 1, solves heat dissipation problem better.
Preparation of devices method of the present invention may further comprise the steps:
1. heating panel design: according to concrete use needs, carry out the design of heating panel, can design its shape, area, thickness etc.;
2. heating panel processing: the concrete parameter according to design is processed heating panel;
3. heating panel cleans: the heat sink plate that processes is carried out cleaning, so that use.
4. Integrated electrode on the heating panel: carry out the heating panel and the electrode pin that process integrated, use the elargol of heat conduction non-conducting to make it have good thermal conductivity and can not cause situation such as short circuit, then chip not being had support is potted directly on the fin, by the gold thread welding chip and electrode are coupled together, according to the design needs each chip is coupled together in modes such as series, parallel, series-parallel connections again.
5. solid brilliant on the heating panel: as will to carry out expanding the brilliant led chip of handling and be placed on the anchor clamps of the brilliant platform of thorn, and led chip be stung corresponding position singly at the brilliant pen of microscopically utilization thorn;
6. gold thread welding: make spun gold between the contact conductor bonding region of the electrode of led chip and outside, form good Ohmic contact with ultrasonic gold wire bonder;
7. dot fluorescent powder: directly on heating panel, make fluorescent material cover led chip fully in fluorescent material;
8. nano particle light distribution: will be added with nanometer or micro particles and the silica gel that stirs is encapsulated on the heating panel according to the coating zone of fluorescent material, and form the silica gel encapsulated layer, wherein, the edge of silica gel regions coated is a bit larger tham the edge of fluorescent material region; Then, the above-mentioned device that obtains was solidified 1 hour at 135 ℃, promptly get light-emitting diode;
9. shell and test are installed: the shell of LED is installed, then the LED that obtains is carried out the test of photoelectric parameter and overall dimension.
In the present invention,, improved radiating efficiency well, simplified production stage, reduced cost because heating panel and electrode are integrated in one.By in silica gel, being added with nanometer or micro particles, can make LED that light extraction efficiency and uniformity are preferably arranged.
The above only is one embodiment of the present invention, it or not whole or unique execution mode, the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading specification of the present invention is claim of the present invention and contains.
Claims (7)
1. collecting and distributing hot plate and electrode are in the radiating element of one, it is characterized in that: comprise heating panel (1), be fixed on led chip (2) on the heating panel (1), be coated in heating panel (1) and go up and cover fully the phosphor powder layer (3) of led chip (2), be coated in the silica gel encapsulated layer (4) on the phosphor powder layer (3), be integrated in the electrode pin (5) on the heating panel, and self-electrode pin (5) contact conductor (6) of drawing, wherein, the electrode pin of chip (5) directly links to each other with heating panel (1).
2. a kind of collecting and distributing hot plate as claimed in claim 1 and electrode is characterized in that in the radiating element of one: described silica gel encapsulated layer (4) is by being that 1: 3~3: 1 silica gel and nanometer or micro particles mix according to mass ratio.
3. a kind of collecting and distributing hot plate as claimed in claim 1 and electrode is characterized in that in the radiating element of one: described heating panel is aluminium, copper, silver metal or nonmetal material with excellent heat dispersion performance.
4. a kind of collecting and distributing hot plate as claimed in claim 1 and electrode is characterized in that in the radiating element of one: the zone that described silica gel encapsulated layer covers is greater than the zone of phosphor powder layer.
5. collecting and distributing hot plate according to claim 1 and electrode is characterized in that in the preparation method of the radiating element of one: with point gum machine chip and electrode pin are fixed on the heating panel; Well contact forming between led chip and the electrode pin with ultrasonic gold wire bonder; On heating panel, apply phosphor powder layer, make phosphor powder layer cover led chip fully; At last, on phosphor powder layer, apply silica gel encapsulated layer or load onto shell.
6. a kind of collecting and distributing hot plate as claimed in claim 5 and electrode is characterized in that in the preparation method of the radiating element of one: adopt any connected mode in series, parallel, the series-parallel connection between the described chip.
7. a kind of collecting and distributing hot plate as claimed in claim 5 and electrode are in the preparation method of the radiating element of one, and it is characterized in that: described heating panel and electrode pin are connected in one by the elargol of heat conduction non-conducting.
Priority Applications (1)
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CN 201010561114 CN102110762B (en) | 2010-11-26 | 2010-11-26 | Radiating device integrating radiating plate and electrode and manufacturing method thereof |
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CN 201010561114 CN102110762B (en) | 2010-11-26 | 2010-11-26 | Radiating device integrating radiating plate and electrode and manufacturing method thereof |
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CN102110762A true CN102110762A (en) | 2011-06-29 |
CN102110762B CN102110762B (en) | 2012-12-19 |
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CN 201010561114 Expired - Fee Related CN102110762B (en) | 2010-11-26 | 2010-11-26 | Radiating device integrating radiating plate and electrode and manufacturing method thereof |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102956628A (en) * | 2011-08-18 | 2013-03-06 | 乐金显示有限公司 | Light emitting diode package |
CN103929927A (en) * | 2013-01-15 | 2014-07-16 | 艾默生网络能源-嵌入式计算有限公司 | Integrated thermal inserts and cold plate |
CN104134745A (en) * | 2014-04-28 | 2014-11-05 | 上虞市宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging structure and technology of aluminum base LED (Light Emitting Diode) |
CN105953094A (en) * | 2016-06-29 | 2016-09-21 | 海宁市智慧光电有限公司 | Small-power ultralow-luminous decay semiconductor light source |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030116769A1 (en) * | 2001-12-24 | 2003-06-26 | Samsung Electro-Mechanics Co., Ltd. | Light emission diode package |
CN2590181Y (en) * | 2002-09-10 | 2003-12-03 | 山西至诚科技有限公司 | High power white light diode |
-
2010
- 2010-11-26 CN CN 201010561114 patent/CN102110762B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030116769A1 (en) * | 2001-12-24 | 2003-06-26 | Samsung Electro-Mechanics Co., Ltd. | Light emission diode package |
CN2590181Y (en) * | 2002-09-10 | 2003-12-03 | 山西至诚科技有限公司 | High power white light diode |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102956628A (en) * | 2011-08-18 | 2013-03-06 | 乐金显示有限公司 | Light emitting diode package |
US9373607B2 (en) | 2011-08-18 | 2016-06-21 | Lg Display Co., Ltd. | Light emitting diode package |
CN103929927A (en) * | 2013-01-15 | 2014-07-16 | 艾默生网络能源-嵌入式计算有限公司 | Integrated thermal inserts and cold plate |
US9713287B2 (en) | 2013-01-15 | 2017-07-18 | Artesyn Embedded Computing, Inc. | Integrated thermal inserts and cold plate |
CN103929927B (en) * | 2013-01-15 | 2017-08-11 | 艾默生网络能源-嵌入式计算有限公司 | Integrated hot plug-in unit and coldplate |
US10039210B2 (en) | 2013-01-15 | 2018-07-31 | Artesyn Embedded Computing, Inc. | Integrated thermal inserts and cold plate |
CN104134745A (en) * | 2014-04-28 | 2014-11-05 | 上虞市宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging structure and technology of aluminum base LED (Light Emitting Diode) |
CN104134745B (en) * | 2014-04-28 | 2017-02-15 | 绍兴宝之能照明电器有限公司 | MCOB (Multi-chips On Board) packaging technology of aluminum base LED (Light Emitting Diode) |
CN105953094A (en) * | 2016-06-29 | 2016-09-21 | 海宁市智慧光电有限公司 | Small-power ultralow-luminous decay semiconductor light source |
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CN102110762B (en) | 2012-12-19 |
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