CN101528973B - 用于原子层沉积的涡流室盖 - Google Patents

用于原子层沉积的涡流室盖 Download PDF

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Publication number: CN101528973B
Authority: CN; China
Prior art keywords: gas; chamber; substrate; road; flow
Prior art date: 2006-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN200780039651XA

Other languages

English (en)

Chinese (zh)

Other versions

CN101528973A (zh

Inventor

吴典晔

庞尼特·巴贾

袁晓雄

史蒂文·H·金

舒伯特·S·楚

保罗·F·马

约瑟夫·F·奥布赫恩

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-10-24

Filing date

2007-10-24

Publication date

2012-04-25

2007-10-24 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2007-10-24 Priority to CN201410196103.XA priority Critical patent/CN104073778B/zh

2009-09-09 Publication of CN101528973A publication Critical patent/CN101528973A/zh

2012-04-25 Application granted granted Critical

2012-04-25 Publication of CN101528973B publication Critical patent/CN101528973B/zh

Status Active legal-status Critical Current

2027-10-24 Anticipated expiration legal-status Critical

Links

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Images

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate

CN200780039651XA 2006-10-24 2007-10-24 用于原子层沉积的涡流室盖 Active CN101528973B (zh)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CN201410196103.XA CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US86276406P	2006-10-24	2006-10-24
US60/862,764		2006-10-24
PCT/US2007/082369 WO2008052047A2 (en)	2006-10-24	2007-10-24	Vortex chamber lids for atomic layer deposition

Related Child Applications (3)

Application Number	Title	Priority Date	Filing Date
CN201410196103.XA Division CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033178.7A Division CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033172.XA Division CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Publications (2)

Publication Number	Publication Date
CN101528973A CN101528973A (zh)	2009-09-09
CN101528973B true CN101528973B (zh)	2012-04-25

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Application Number	Title	Priority Date	Filing Date
CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033172.XA Active CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033178.7A Active CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN200780039651XA Active CN101528973B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

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CN201410196103.XA Active CN104073778B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033172.XA Active CN102586760B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖
CN201210033178.7A Active CN102586761B (zh)	2006-10-24	2007-10-24	用于原子层沉积的涡流室盖

Country Status (4)

Country	Link
KR (3)	KR101448447B1 (sv)
CN (4)	CN104073778B (sv)
TW (2)	TWI476297B (sv)
WO (1)	WO2008052047A2 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102762767B (zh)	2010-03-12	2015-11-25	应用材料公司	具有多重注射道的原子层沉积腔室
US9322097B2 (en)	2013-03-13	2016-04-26	Applied Materials, Inc.	EPI base ring
KR101701257B1 (ko)	2013-03-14	2017-02-01	어플라이드 머티어리얼스, 인코포레이티드	박막 캡슐화 ― ｏｌｅｄ 어플리케이션을 위한 얇은 초고 배리어 층
US9890456B2 (en) *	2014-08-21	2018-02-13	Asm Ip Holding B.V.	Method and system for in situ formation of gas-phase compounds
US9951421B2 (en) *	2014-12-10	2018-04-24	Lam Research Corporation	Inlet for effective mixing and purging
JP6487747B2 (ja)	2015-03-26	2019-03-20	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置と処理ガス供給ノズル
FI128855B (sv) *	2019-09-24	2021-01-29	Picosun Oy	Fluiddistributionsanordning för en tunnfilmsdeponeringsutrustning, tillhörande utrustning och förfaranden

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TWI476297B (zh)	2015-03-11
KR20090083404A (ko)	2009-08-03
TWI410518B (zh)	2013-10-01
WO2008052047A3 (en)	2008-12-11
KR101448447B1 (ko)	2014-10-13
KR20140009593A (ko)	2014-01-22
CN104073778A (zh)	2014-10-01
TW201241228A (en)	2012-10-16
CN102586761A (zh)	2012-07-18
KR20120048685A (ko)	2012-05-15
KR101432257B1 (ko)	2014-08-21
TW200833867A (en)	2008-08-16
CN104073778B (zh)	2017-08-25
CN102586761B (zh)	2014-10-15
CN102586760A (zh)	2012-07-18
WO2008052047A2 (en)	2008-05-02
CN101528973A (zh)	2009-09-09
CN102586760B (zh)	2016-07-06

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