CN101442148B - Microstrip-waveguide transition probe and impedance matching method - Google Patents
Microstrip-waveguide transition probe and impedance matching method Download PDFInfo
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- CN101442148B CN101442148B CN2008102398893A CN200810239889A CN101442148B CN 101442148 B CN101442148 B CN 101442148B CN 2008102398893 A CN2008102398893 A CN 2008102398893A CN 200810239889 A CN200810239889 A CN 200810239889A CN 101442148 B CN101442148 B CN 101442148B
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Abstract
The invention discloses a method for matching a microstrip-waveguide conversion probe and impedance, which belongs to the technical field of electromagnetic fields and microwave circuits. The method comprises: designing and obtaining the size of the conversion probe according to the back-to-back structure of the microstrip-waveguide conversion probe; placing a micro strip in the middle of the back-to-back structure of the microstrip-waveguide conversion probe; performing computer simulation on the width of the conversion micro strip, and obtaining the input impedance of the conversion probe; and utilizing a one-fourth wavelength impedance conversion line to match the input impedance into 50 ohms. The method combines design of the size of the conversion probe and impedance calculation, namely impedance matching design is completed when the microstrip-waveguide conversion probe is designed, conveniently obtains the input impedance of the conversion probe, and further realizes design of a matching circuit. Moreover, the method is simple to operate, has simple and convenient process, simplifies the matching circuit, and improves the precision of impedance matching.
Description
Technical field
The present invention relates to electromagnetic field and technical field of microwave circuits, the impedance matching methods of particularly a kind of little band-waveguide transitions probe.
Background technology
Along with developing rapidly of microwave, millimeter wave transceiving system, require more compact little band-waveguide transition.Little band-waveguide transition form at present commonly used mainly contains: ridge waveguide transition, to utmost point fin-line transition and little band probe transitions or the like.Wherein, little band probe transitions is the most little band-waveguide transition form of using at present, and its advantage is: insert that loss is low, return loss is little, bandwidth, and compact conformation, easy to process, loading and unloading are easily, are particularly suitable for Millimeter Wave Applications.
In the design process of little band probe, need be with its input impedance matching to 50 ohm, so that be connected, and then reduce standing wave, improve the stability of power gain and system with late-class circuit (its input and output impedance is generally 50 ohm).The little band probe of traditional conversion impedance matching methods is: through the size of the little band probe of software design, obtain the input impedance of little band probe through Computer Simulation; Input impedance is updated in other impedance matching software designs match circuit, and then will be impedance-matched to 50 ohm.But, this method more complicated that operates, process is loaded down with trivial details, and impedance matching circuit is complicated, and the impedance matching precision is not high.
Summary of the invention
In order to simplify the design process of little band-waveguide transitions probe, improve the impedance matching precision, the invention provides the impedance matching methods of a kind of little band-waveguide transitions probe, said method comprises:
Steps A: according to little band-waveguide transitions probe structure back-to-back, design obtains the transition probe size;
Step B: in the middle of said little back-to-back band-waveguide transitions probe structure, place one section microstrip line;
Step C: the width of the said microstrip line of conversion carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have said microstrip line; When said microstrip line during at a certain width; Its characteristic impedance is the same with said little back-to-back band-waveguide transitions probe structure central point impedance; This moment, simulation result was consistent with the simulation result of the transition probe structure that does not have said microstrip line, obtained the input impedance of said transition probe according to the width of said microstrip line at this moment;
Step D: utilize 1/4 wavelength impedance conversion line with said input impedance matching to 50 ohm.
Said little back-to-back band-waveguide transitions probe structure is made up of two symmetrical fully transition probe structures, and said little back-to-back band-waveguide transitions probe structure central point impedance is pure real impedance.
Said input impedance is pure real impedance.
Said impedance conversion line is used for converting said pure real impedance into late-class circuit needed impedance.
Beneficial effect: the present invention combines the design and the impedance computation of the size of transition probe own; Promptly in design little band-waveguide transitions probe; Accomplish designing impedance matching, obtained the input impedance of transition probe very easily, and then realized the match circuit design; This method is simple to operate, and process is easy, and has simplified match circuit, has mentioned the accuracy of impedance matching.
Description of drawings
Fig. 1 is the 3 D stereo sketch map of the little back-to-back band of the embodiment of the invention-waveguide transitions probe structure;
Fig. 2 is the generalized section of the little back-to-back band of the embodiment of the invention-waveguide transitions probe structure;
Fig. 3 is the 3 D stereo sketch map that the embodiment of the invention has been placed the little back-to-back band-waveguide transitions probe structure of microstrip line;
Fig. 4 is that the embodiment of the invention utilizes 1/4 wavelength impedance conversion line to realize the transition probe and the match circuit generalized section of impedance matching;
Fig. 5 is the impedance matching methods flow chart of little band-waveguide transitions probe of providing of the embodiment of the invention;
Fig. 6 is that the small-signal that little band-waveguide transitions probe structure that the embodiment of the invention provides is applied to the Ka wave band inserts loss test figure;
Fig. 7 is the input/output port reflection measurement figure that little band-waveguide transitions probe structure that the embodiment of the invention provides is applied to the Ka wave band.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that embodiment of the present invention is done to describe in detail further below.
The impedance matching methods of little band-waveguide transitions probe that the embodiment of the invention provides mainly comprises following process: at first according to little band-waveguide transitions probe structure (as shown in Figure 1) back-to-back; Design obtains the transition probe size; Can guarantee that like this this structure centre point impedance is pure real impedance, the probe profile that design obtains is as shown in Figure 2; Secondly in the middle of this little back-to-back band-waveguide transitions probe structure, place one section microstrip line, the width through this section of conversion microstrip line carries out Computer Simulation, obtains this pure real impedance value, and the schematic three dimensional views of this part is as shown in Figure 3; The pure real impedance that will obtain through 1/4 wavelength impedance conversion line at last matches 50 ohm, has realized that through this impedance conversion line the probe of impedance matching and match circuit profile are as shown in Figure 4.Below set forth in detail the technical scheme that the embodiment of the invention provides.
Referring to Fig. 5, the embodiment of the invention provides the impedance matching methods of a kind of little band-waveguide transitions probe, and this method may further comprise the steps:
Step 101:,, select suitable standard square wave guide physical dimension with reference to international waveguide dimensions standard according to operating frequency;
In practical application, can select suitable standard square wave guide physical dimension through checking the mode of international waveguide dimensions standard scale; Standard square wave guide physical dimension comprises the length and the width of square wave guide;
Step 102:, confirm that the probe in the square wave guide is positioned at apart from waveguide short face 1/4 wavelength according to the pairing wavelength of operating frequency central point;
Step 103: utilize 3 D electromagnetic field simulation software to set up a little back-to-back band-waveguide transitions probe structure;
Little back-to-back band-waveguide transitions probe structure comprises: two symmetrical fully rectangle square wave guides, two duplicate transition probes, and substrate and air or the like; Two transition probe structures are symmetrical fully, and when utilizing this symmetrical structure design transition probe size, it is little to satisfy the working frequency range standing internal wave, and loss is hanged down when requiring, and has guaranteed that also this symmetrical structure central point impedance is pure real impedance;
Step 104: probe length L and width W in the little back-to-back band of optimal design-waveguide transitions probe structure;
Probe after the optimization can make it in working frequency range, obtain good standing wave and insert drain performance; The impedance of little back-to-back band-waveguide transitions probe structure central spot at this moment; The input impedance value that is probe has only real part and does not have imaginary part, supposes that this real impedance value is Zin; Input impedance is pure real impedance.
Step 105: in the middle of little band-waveguide transitions probe structure back-to-back, place one section microstrip line, the width of this section of conversion microstrip line carries out Computer Simulation, obtains the input impedance of transition probe;
In practical application; The microstrip line characteristic impedance of placing in the centre when this section and the pure real part input impedance phase of above-mentioned transition probe have increased standing wave and insertion signal and the little back-to-back band-waveguide transitions probe structure that does not increase microstrip line consistent of the little back-to-back band-waveguide transitions probe structure of microstrip line simultaneously; According to this principle, the width through the conversion microstrip line carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have microstrip line, establishes when the width of microstrip line is Wmid two kinds of simulation result unanimities; Then this moment, width was the pairing characteristic impedance of Wmid microstrip line, was the input impedance Zin of transition probe;
Step 106: utilize 1/4 wavelength impedance conversion line to incite somebody to action the input impedance of little band-waveguide transitions probe back-to-back and transform to 50 ohm;
As shown in Figure 4, can be according to formula
Obtain the characteristic impedance Z of 1/4 wavelength impedance conversion line
λ/4, and then calculate the width W R of impedance conversion line; The impedance conversion line is used for converting pure real impedance into late-class circuit needed impedance.
The impedance matching methods of little band-waveguide transitions probe that the embodiment of the invention provides; The design and the impedance computation of the size of transition probe own are combined; Promptly in design little band-waveguide transitions probe; Accomplish designing impedance matching, obtained the input impedance of transition probe very easily, and then realized the match circuit design.This method is simple to operate, and process is easy, and has simplified match circuit, has mentioned the accuracy of impedance matching.
The impedance matching methods of little band-waveguide transitions probe that the embodiment of the invention provides is simple and practical, the module of making the Ka wave band insert loss little (0.5dB) (as shown in Figure 6), standing wave good (in quite wide frequency band less than-20dB) (as shown in Figure 7); Link to each other with final-stage power amplifier and to have realized 50 good ohms impedance match, satisfied little conversion of taking waveguide to fully, and the requirement of impedance matching.In addition, the technical scheme that provides of the embodiment of the invention can also be applied in the input impedance calculating and designing impedance matching of the little band of any wave band-waveguide transitions structure.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the impedance matching methods of little band-waveguide transitions probe is characterized in that, said method comprises:
Steps A: according to little band-waveguide transitions probe structure back-to-back, design obtains the transition probe size;
Step B: in the middle of said little back-to-back band-waveguide transitions probe structure, place one section microstrip line;
Step C: the width of the said microstrip line of conversion carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have said microstrip line; When said microstrip line during at a certain width; Its characteristic impedance is the same with said little back-to-back band-waveguide transitions probe structure central point impedance; This moment, simulation result was consistent with the simulation result of the transition probe structure that does not have said microstrip line, obtained the input impedance of said transition probe according to the width of said microstrip line at this moment;
Step D: utilize 1/4 wavelength impedance conversion line with said input impedance matching to 50 ohm.
2. the impedance matching methods of little band as claimed in claim 1-waveguide transitions probe; It is characterized in that; Said little back-to-back band-waveguide transitions probe structure is made up of two symmetrical fully transition probe structures, and said little back-to-back band-waveguide transitions probe structure central point impedance is pure real impedance.
3. the impedance matching methods of little band as claimed in claim 1-waveguide transitions probe is characterized in that said input impedance is pure real impedance.
4. the impedance matching methods of little band as claimed in claim 3-waveguide transitions probe is characterized in that, said impedance conversion line is used for converting said pure real impedance into late-class circuit needed impedance.
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| CN104331535A (en) * | 2014-09-22 | 2015-02-04 | 安徽华东光电技术研究所 | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4453142A (en) * | 1981-11-02 | 1984-06-05 | Motorola Inc. | Microstrip to waveguide transition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4453142A (en) * | 1981-11-02 | 1984-06-05 | Motorola Inc. | Microstrip to waveguide transition |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2007-228036A 2007.09.06 |
| JP特开平11-312908A 1999.11.09 |
| 张荣辉.Ka波段宽带波导-微带探针过渡设计.《2003全国微波毫米波会议论文集》.2003, * |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |