CN101360368A - Silver layer insulation method in warm white light LED encapsulation process - Google Patents

Silver layer insulation method in warm white light LED encapsulation process Download PDF

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Publication number
CN101360368A
CN101360368A CNA2007100753519A CN200710075351A CN101360368A CN 101360368 A CN101360368 A CN 101360368A CN A2007100753519 A CNA2007100753519 A CN A2007100753519A CN 200710075351 A CN200710075351 A CN 200710075351A CN 101360368 A CN101360368 A CN 101360368A
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Prior art keywords
silver layer
warm white
encapsulation process
led encapsulation
organic solvent
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CNA2007100753519A
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CN100574543C (en
Inventor
姜军华
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SHENZHEN LIGHT ELECTRONICS CO., LTD.
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SHENZHEN LIGHT ELECTRONICS CO Ltd
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Abstract

The invention discloses a silver layer isolated method in the process of the warm white light LED encapsulation, which mainly includes steps that: A): a blue LED chip is fixed at the bottom of a reflection cup and disposed through baking; B): an easily volatile liquid mixed by organic solvent and epoxy resin in certain proportion is smeared on the inner wall silver layer of the reflection cup; C): a gold line is connected between the blue LED chip and electrodes; D): phosphor powder is evenly dotted in the reflection cup through a injector. Through the isolation layer formed by the liquid which is mixed by the organic solvent and epoxy resin, the invention can successfully separate the phosphor powder from the silver layer, so as to avoid chemical reaction played between two layers above; thereby achieving to improve the production technology and enhance the lighting brightness of the warm white light LED.

Description

The method of isolating silver layer in a kind of warm white LED encapsulation process
Technical field:
The present invention relates to the LED encapsulation technology, particularly be in a kind of warm white LED encapsulation process, with the silver layer method of keeping apart of fluorescent material with the reflection wall of cup.
Background technology:
In the design of existing warm white LED, most crucial steps is exactly a dot fluorescent powder, and dot fluorescent powder is the key that warm white forms.The chip wavelength is the LED of 460-465nm, and the fluorescent material of choosing is equally also at this wave band.Dot fluorescent powder is to be divided into two very important operations, and one is to transfer fluorescent material, and one is to smear fluorescent material.The fluorescent material of common usefulness is powdery, therefore the material of powdery can not be covered on the chip, and must be liquid, but also can not be the fluorescent material liquefy, because the component of fluorescent material is heavy metal and rare metal.Have only fluorescent material is dissolved in a kind of solvent, and then this fluorescent material liquid is dried, it is covered on the blue chip.
The solvent that fluorescent material dissolved must be the tissue that can not destroy fluorescent material self, therefore this solvent need be can not with a kind of material of fluorescent material generation chemical reaction, know according to the similar principle that mixes, fluorescent material can not be dissolved in the organic solvent, so just can only be to have mixed, if be that to remove to carry out external seal again be impracticable on the simple surface that this mixed solution is covered chip, because external seal is a this liquid of the epoxy resin of usefulness, that is to say and it must be dried before encapsulation, so tradition adopts the epoxy resin of external seal to make this solvent.
Producing now what generally all adopts among the LED of warm white is the fluorescent material that contains sulphur (S), and this fluorescent material owing to wherein S can with reflecting wall silver layer generation chemical reaction (2Ag+S=Ag 2S), thereby can destroy silver layer, cause LED light reflecting effect variation, influence the luminosity of LED.
Summary of the invention:
In order to solve the problem that sulphur in the existing warm white LED lamp can destroy silver layer, the invention provides in a kind of warm white LED encapsulation process the method that the fluorescent material and the silver layer of reflection wall of cup are kept apart.
For achieving the above object, the present invention mainly adopts following steps
B): on reflector inwall silver layer, smear the volatile organic solvent of configuration according to a certain percentage and the mixed liquor of epoxy resin.
Also include step before the described step B:
A): the blue led chip is fixed on the reflector bottom, and carries out baking processing.
Also include step after the described step B:
C): between blue led chip and electrode, connect gold thread;
D): in reflector, click and enter fluorescent material uniformly with syringe.
The ratio of wherein said volatile organic solvent and epoxy resin is 20: 1.
Wherein said volatile organic solvent is an acetone.
The present invention is by smearing the mixed liquor of a certain proportion of volatile organic solvent and epoxy resin between the silver layer of phosphor powder layer and reflector inwall, thereby the S that reaches easily reaction separates with Ag, and this organic solvent volatilizees easily, the warm white that whole LED is produced does not influence, organic solvent volatilization back epoxy resin is then attached to silver layer surface in addition, thereby well silver layer and fluorescent material are isolated, the present invention adopts comparatively simple mode, improve the LED production technology, reached good LED illumination effect.
Description of drawings:
Fig. 1 is a product structure schematic diagram of the present invention.
Fig. 2 is for isolating the silver layer schematic diagram in the reflector of the present invention.
Identifier declaration among the figure: anode rod 101, cathode rod 102, blue led chip 103, support 104, reflector 105, gold thread 106, epoxy resin 107, phosphor powder layer 108, separator 109.
Embodiment:
Below in conjunction with the drawings and specific embodiments the present invention is done and to describe in further detail.
See also Fig. 1~shown in Figure 2, the present invention is that it is in particular in fluorescent material and silver layer are separated to the improving one's methods of warm white LED encapsulating structure.
The warm white LED encapsulation process is as follows: at first at the bottom of reflector 105 middle point glue, wherein the glue amount is wanted suitably, and the glue amount will stipulate that its standard is not for being higher than chip upper surface according to the size of the area of blue led chip 103.Colloid here has been the effect of adhesive, just chip is fixed in the reflector 105.Because blue high brightness LED chip is a bipolar electrode, so we can fix with insulating cement.
Then blue led chip 103 is placed on the automatically solid brilliant machine, it is installed in the place, middle, bottom of reflector 105.There is biasing will cause the inhomogeneous of hot spot as fruit chip, thereby influences the average intensity of LED.
After finishing said process, semi-finished product are put into baking box, oven temperature is 150 ℃, toasts about 1.5 hours.
Because blue high brightness LED chip is a bipolar electrode, therefore two electrode need be connected with support 104, cathode rod 102 on the anode rod 101 respectively.
See also shown in Figure 2, here on reflector 105 inwall silver layers, smear mixed liquor, this mixed liquor mainly is to be formed according to certain mixed by volatile organic solvent-acetone and epoxy resin, ratio between it is between 20: 1 to 24: 1, because acetone is volatile organic solvent, therefore can on reflector 105 inwall silver layers, stay separator 109, in reflector 105, evenly clicking and entering fluorescent material by syringe then, and forming phosphor powder layer 108, the phosphor powder layer 108 here is by fluorescent material, surfactant, diffusant and epoxy resin with 10: 5: 3: 100 mixed forms.After clicking and entering fluorescent material LED is put into 120 oven for baking 20-45 minutes of spending, then inject liquid resin in the LED shaping mold cavity after the baking, insert the good led support of pressure welding then, put into baking oven by resin solidification, it is moulding that LED deviates from from die cavity.
More than the method for isolating silver layer in a kind of warm white LED encapsulation process provided by the present invention is described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.

Claims (5)

1, isolate the method for silver layer in a kind of warm white LED encapsulation process, it is characterized in that comprising step:
B): on reflector inwall silver layer, smear the volatile organic solvent of configuration according to a certain percentage and the mixed liquor of epoxy resin.
The method of 2, isolating silver layer in the warm white LED encapsulation process according to claim 1 is characterized in that above-mentioned steps B also includes step before:
A): the blue led chip is fixed on the reflector bottom, and carries out baking processing.
The method of 3, isolating silver layer in the warm white LED encapsulation process according to claim 1 is characterized in that above-mentioned steps B also includes step afterwards:
C): between blue led chip and electrode, connect gold thread;
D): in reflector, click and enter fluorescent material uniformly with syringe.
4, isolate the method for silver layer in the warm white LED encapsulation process according to claim 1, the ratio that it is characterized in that described volatile organic solvent and epoxy resin is 20: 1.
5, isolate the method for silver layer in the warm white LED encapsulation process according to claim 1, it is characterized in that described volatile organic solvent is an acetone.
CNB2007100753519A 2007-07-30 2007-07-30 The method of isolating silver layer in a kind of warm white LED encapsulation process Expired - Fee Related CN100574543C (en)

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CNB2007100753519A CN100574543C (en) 2007-07-30 2007-07-30 The method of isolating silver layer in a kind of warm white LED encapsulation process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2007100753519A CN100574543C (en) 2007-07-30 2007-07-30 The method of isolating silver layer in a kind of warm white LED encapsulation process

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CN100574543C CN100574543C (en) 2009-12-23

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Cited By (21)

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WO2012027871A1 (en) * 2010-09-03 2012-03-08 Cree Huizhou Opto Limited Led package with contrasting face
USD656906S1 (en) 2008-01-10 2012-04-03 Cree Hong Kong Limited LED package
USD662902S1 (en) 2007-12-14 2012-07-03 Cree Hong Kong Limited LED package
CN102606932A (en) * 2012-03-30 2012-07-25 杭州晶亮半导体科技有限公司 High-brightness small-sized condensation LED
US8362605B2 (en) 2006-04-26 2013-01-29 Cree Huizhou Opto Limited Apparatus and method for use in mounting electronic elements
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
CN104770951A (en) * 2015-05-07 2015-07-15 北京大学深圳医院 Light-adjustable intelligent walking stick with colored lamp strings
CN105870307A (en) * 2016-04-30 2016-08-17 浙江单色电子科技有限公司 Low-light-decay ultraviolet LED and manufacturing method thereof
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8362605B2 (en) 2006-04-26 2013-01-29 Cree Huizhou Opto Limited Apparatus and method for use in mounting electronic elements
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US10892383B2 (en) 2007-10-31 2021-01-12 Cree, Inc. Light emitting diode package and method for fabricating same
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same
USD662902S1 (en) 2007-12-14 2012-07-03 Cree Hong Kong Limited LED package
USD671661S1 (en) 2008-01-10 2012-11-27 Cree Hong Kong Limited LED package
USD656906S1 (en) 2008-01-10 2012-04-03 Cree Hong Kong Limited LED package
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
CN102386307A (en) * 2010-09-03 2012-03-21 惠州科锐光电有限公司 LED package with contrasting face
WO2012027871A1 (en) * 2010-09-03 2012-03-08 Cree Huizhou Opto Limited Led package with contrasting face
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
CN102606932B (en) * 2012-03-30 2015-01-07 杭州晶亮半导体科技有限公司 High-brightness small-sized condensation LED
CN102606932A (en) * 2012-03-30 2012-07-25 杭州晶亮半导体科技有限公司 High-brightness small-sized condensation LED
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
CN104770951A (en) * 2015-05-07 2015-07-15 北京大学深圳医院 Light-adjustable intelligent walking stick with colored lamp strings
CN105870307A (en) * 2016-04-30 2016-08-17 浙江单色电子科技有限公司 Low-light-decay ultraviolet LED and manufacturing method thereof

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Address after: 518000, 95-96, Fifth Industrial Zone, Mashan Town, Gongming Town, Shenzhen, Guangdong, Baoan District

Patentee after: SHENZHEN LIGHT ELECTRONICS CO., LTD.

Address before: 518000, 95-96, Fifth Industrial Zone, Mashan Town, Gongming Town, Shenzhen, Guangdong, Baoan District

Patentee before: Shenzhen LIGHT Electronics Co., Ltd.

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Granted publication date: 20091223

Termination date: 20160730