CN101199044A - 硅基电介质的化学气相沉积方法 - Google Patents

硅基电介质的化学气相沉积方法 Download PDF

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CN101199044A
CN101199044A CNA2006800218397A CN200680021839A CN101199044A CN 101199044 A CN101199044 A CN 101199044A CN A2006800218397 A CNA2006800218397 A CN A2006800218397A CN 200680021839 A CN200680021839 A CN 200680021839A CN 101199044 A CN101199044 A CN 101199044A
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nitrogen
chemicals
carbon
substrate
silicon
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Y·王
Y·梅达
T·C·梅勒
S·M·苏特
S·坦东
R·S·伊尔
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Applied Materials Inc
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Abstract

本发明的具体实例一般而言是提供一种用于沉积含硅薄膜的方法。在一具体实例中，一种用于将含硅材料薄膜沉积在基板上的方法包含下列步骤：将含有氮和碳的化学物流入沉积腔室内；将具有硅－氮键的含硅源化学物流入处理腔室内：及将位于腔室内的基板加热至低于约550℃以下的温度。在另一具体实例中，此含硅化学物是三硅基胺，且含有氮和碳的化学物是(CH3)3－N。

Description

硅基电介质的化学气相沉积方法
技术领域
本发明的具体实例一般而言是关于用于沉积含硅材料的方法，且更具体而言，本发明的具体实例是关于用于热沉积氮化硅材料的化学气相沉积技术。
背景技术
诸如氮化硅等含硅薄膜的热化学气相沉积法(CVD)是在制造半导体装置时所使用的一种最先进技术的前段制程。例如，在用于沉积氮化硅的热CVD制程中，热能是用于使得一种或以上的包含硅前驱物的原料化学物发生断裂，以在基板表面形成氮化硅的薄膜。传统的含硅材料的热CVD是典型地在提高的制程温度下，在批式炉或在单晶片沉积室中实施。随着装置的几何尺寸缩小以使得整合更为快速，因此用于沉积薄膜的热预算(thermal budget)必须加以降低，以达成避免装置受到损坏、令人满意的加工结果、优良的生产良率、及稳固的装置性能。虽然已有某些使用沉积温度为550℃以下的用于含硅材料的CVD制程的提案，但是并无仅使用热处理(亦即，无电浆或光子辅助的制程)已显示在制造半导体装置时具有适用于大规模生产的利用价值。
因此，其是需要一种在低于约550℃以下的温度沉积例如氮化硅的含硅材料的方法。
发明内容
本发明的具体实例一般而言是提供一种用于沉积的方法，在一具体实例中，一种用于将含硅薄膜沉积在基板上的方法包括：将含有氮和碳的化学物流入沉积腔室；将具有硅-氮键的含硅源化学物流入处理腔室；及将位于腔室内的基板加热至低于550℃以下的温度。在另一具体实例，含硅化学物是三硅基胺，且含有氮和碳的化学物是(CH3)3-N。
附图说明
藉此方式则可详细地理解到如上所例示本发明的特征方法，本发明的更特定的说明，如上所述者，将可藉由参考具体实例而获得了解，一部份是展示于附加的图式中。然而，应了解到所附加的图式是仅作为例示本发明的典型的具体实例，且并非视为限制其范围，本发明是承认熟习此技艺者的其它等效的具体实例。
图1是供实施本发明氮化硅沉积方法的处理腔室的一具体实例概略剖面图。
图2是沉积氮化硅薄膜的方法的一具体实例流程图。
图3A-B是具有至少一部份是根据图2的方法所沉积的氮化硅层的MOSFET晶体管剖面图。
图4是典型的具有至少一部份是使用图2的方法所沉积的氮化硅层的双极性晶体管剖面图。
为容易了解，其中是使用完全相同的组件符号，若可能时，对于图中共同的同一组件则附以相同符号。可预期的是一具体实例的某些组件代表符号是可相辅相成并存于其它具体实例。
主要组件符号说明
100    处理腔室
102    本体
104    内部容积
106    壁
108    底板
110    盖
112    导液路
114    顶起销
116    电源
118    顶起板
120    加热器
122    基板
124    台座
126    泵送口
128    基板存取口
130    台座升降组件
132    波纹管
134    进口
136    气体控制面板
138    泵送系统
140    气体管线
142    泵送环
144    喷淋头
146    控制器
148    内存
150    CPU(中央处理单元)
152    支持电路
154    穿孔区
200    方法
202    沉积步骤
204    加热步骤
206    含氮气体流入步骤
208    硅源气体流入步骤
310    基板
312    源极/漏极层
313    含硅层
316    间隔物
318    栅极阻障层
320    偏置层
322    栅极层
324    蚀刻停止层
326    介电质层
328    介层洞
430    基板
432    n型层
433    隔离层
434    化合物层
436    接触层
438    偏置层
440    隔离层
具体实施方式
本发明的最佳实施方式
本发明的具体实例是提供一种用于使用约550℃以下的温度将例如氮化硅等的含硅层沉积在基板上的方法。虽然本发明将针对如图1所示的单晶片热化学气相沉积(制程)腔室100为例加以说明，但是该方法是也可相辅相成实务应用在其它沉积系统，包括批式沉积系统在内。此等之中，可实施氮化硅沉积制程的处理腔室是包括：可获自应用材料(AppliedMaterials)股份有限公司(加州Santa Clara)的SINGEN或SINGEN Plus制程反应室。适合于实施本发明的其它系统的实例是包括：可获自日本东京电子有限公司(Tokyo Electron Limited)的TELFORMULA批式炉；可获自应用材料股份有限公司的FLEXSTAR迷你型批式硅沉积系统；及可获自ASM International N.V.的EPSILON单晶片外延反应炉。
除热CVD之外，其它可用于沉积氮化硅材料的制程是包括：脉冲-CVD、及原子层沉积(ALD)制程。在脉冲-CVD制程中，例如硅前驱物和反应物等的试剂是以共流和脉冲导入处理腔室。在ALD制程中，例如硅前驱物和反应物等的化学药剂，则是以各自和时序脉冲控制导入处理腔室。电浆增强沉积技术也可使用于ALD或CVD的任一制程中。在本文中所揭示的沉积制程中，可将含硅材料沉积在单一基板或成批基板上。
在图1的具体实例中，处理腔室100是包括联结到泵送系统138的腔室本体102、控制器146、及气体控制面板(gas panel)136。腔室本体102具有壁106、底板108、及限定内部容积104的盖110。本体102的壁106是加以热调节。在一具体实例中，数个导液路112是设置在壁106内，且设置成为使用来调节腔室本体102的温度的热传液体在该导液路112内循环。壁106也额外地包括一基板存取口128，使得基板122的工件容易进出处理腔室100。
基板支撑台座124是配置在腔室本体102的内部容积104内，用以在加工处理时支撑基板122。基板支撑台座124是包括构成为可调节基板122的温度和/或加热处理腔室100的内部容积104的加热器120。如图1所示的具体实例中，加热器120是一种连接到电源116的电阻加热组件，且可将基板加热至至少550℃的温度。
台座升降组件130是联结到基板支撑台座124，且是构成为可在介于上升的加工处理位置(如图1所示)与易于经由基板存取口128存取位于台座124上的基板122的下降位置之间控制台座124的高度。台座升降组件130是以封闭方式使用挠性波纹管132联结到腔室本体102的底板108。台座升降组件130视需要也可构成为使得台座124在加工处理时旋转的方式。
气体控制面板136是联结到处理腔室100，且构成为可对处理腔室本体的内部容积104供应制程用化学物，其呈液体和/或气体形态、及其它气体。如图1所示的具体实例中，气体控制面板136是经由气体管线140联结到在腔室本体102的盖110中所形成的进口134。当然，进口134可形成为穿过腔室本体102的一个或以上的其它位置。
喷淋头144是联结到腔室本体102，用以改善由气体控制面板或液体注入器136所供应至处理腔室100的内部容积104的气体或蒸气的均匀分布。喷淋头144是包括穿孔区154。在穿孔区154所形成的许多孔是以能提供经通过喷淋头144而到达基板122的气体的预定流动分布的方式来构成其尺寸、几何配置、数量和分布
顶起销114(其中的一是展示于图1中)是配置用于将基板122从基板支撑台座124的上表面分离，以易于经由存取口128伸入处理腔室本体的机械手(未图标)移出基板。如图1所示的具体实例中，顶起板118是设置在基板支撑台座124的下面，且加以配置成使得台座124在下降时，顶起销114则将在台座124完成其下降行程之前，即接触到顶起板118。藉此，顶起板118将支撑顶起销114使得台座124继续下降，顶起销114从台座上的表面伸出。顶起板118的位置和/或顶起销114的长度是构成为当台座124位于下降位置时，能使得基板122位于与基板支撑台座124相隔，且通常是在与存取口128排成一线的位置。
泵送系统138是联结到在腔室本体102所形成的泵送口126。泵送系统138通常是包括配置成可控制在处理腔室100的内部容积104的内的压力的节流阀及一个或以上的泵。从内部容积104流向泵送口126的气体是可经由泵送环142等的路径，以改善气体均匀地在基板122的表面上流动。一种可相辅相成地适用于本发明的泵送环是揭示于美国发明专利第10/911,208号，建档于2004年10月4日，其中全部的内容并入本文参考。
 控制器146是联结到处理腔室100的各组件，以使其容易控制如下所述氮化硅的沉积制程。控制器146通常是包括中央处理单元(CPU)150、内存148、及支持电路152。CPU 150可为任何形态的可使用工业用调节装置的用于控制各腔室的计算机处理机及副处理机。内存148、或计算机可读的储存媒体是可为一种或以上的可容易获得的内存，例如随机存取内存(RAM)、只读存储器(ROM)、软磁盘、硬盘、闪存、或任何其它形态的区域性或遥控式数字储存器等。支持电路152是联结到CPU 150，以传统方法支持处理机。此等支持电路152是包括高速缓存、电源、时钟电路、输入/输出电路及子系统等。例如，一种如下所述的含硅材料沉积制程200的制程通常是储存于内存148，其是典型地作为软件程序。软件程序也可加以储存和/或藉由遥控以CPU 150所控制的硬件的第二CPU(未图标)来执行。虽然本发明的沉积制程是描述为以软件程序实施，但是揭示于其中的某些方法步骤，是可在硬件及藉由软件控制器来实施。因此，本发明可在计算机系统上的软件中执行、在应用特定的集成电路或其它类型的硬件中执行、或软件与硬件的组合并用。
图2是展示含硅材料沉积制程200的一具体实例的流程图，其是可在处理腔室100、或其它适当的设备中实施。方法200是从将基板122放置在基板支撑台座124上的步骤202开始。关于可实务应用本发明的氮化硅沉积制程的具体实例的基板1 22是包括(但是并不受限于此等)：例如结晶质硅(例如，Si<100>、或Si<111>)、氧化硅、应变硅、绝缘层上覆硅层(SOI)、硅锗、及掺杂或非掺杂多晶硅(polysilicon)等的半导体晶片。用于沉积含硅层的基板表面可为裸硅、介电质材料、导电性材料、阻障性材料等。基板122在沉积含硅材料之前，视需要可藉由抛光、蚀刻、还原、氧化、卤化、氢氧基化(hydroxylation)、退火和/或烘焙等步骤实施预处理。
在步骤204中，基板122是加热至低于约550℃以下的温度。视制造要求条件而定，基板122也可视需要加热至低于约550℃以下的温度。在一具体实例中，基板122是藉由从电源116对电阻式加热组件(亦即，加热器120)施加电力，以将基板122加热至温度为介于约300与约500℃之间，而在另一具体实例中，基板122是加热至约450℃以下。
在步骤206中，含有氮和碳的化学物是供应至处理腔室100的内部容积中。含有氮和碳的化学物通常是从气体控制面板136供应至进口134。含有氮和碳的化学物可为呈液体和/或气体形态。
在一具体实例中，含有氮和碳的化学物是具有R(C)-CXNYR(N)的化学式，其中R(C)是氢或其它碳氢化合物基、R(N)是氮或其它含氮化合物基，且x及y是正整数。此等之中，适用的含有氮和碳的气体的实例是包括(但是并不受限于此等)：(CH3)3-N、H3C-NH2、甲胺、H3C-NH-NH2、甲基联胺、(H3C)-N＝N-H、及HC≡N。
另一可行的含有氮和碳的化学物是可具有特征为：一种可在500℃以下解离、在室温下具有高蒸气压的含有碳、氮和氢的化合物。此等之中，其它适当的含有氮和碳的化学物的实例是包括(但是并不受限于此等)：CH5N(在25℃的蒸气压为约353kPa)、甲基联胺(CH6N2；在25℃的蒸气压为约66kPa)、及氢氰酸(CHN；在25℃的蒸气压为约98.8kPa)。
在步骤208中，具有至少一个Si-N键的硅源化学物流是从气体控制面板136经由喷淋头144供应至腔室本体102的内部容积104。硅源化学物可为呈液体和/或固体形态。在一具体实例中，硅源化学物是包含：(SiR3)3-N、(SiR3)2N-N(SiR3)2、和(SiR3)N＝(SiR3)N中的至少一种，其中该R是氢(H)、或碳氢化合物试剂、或碎片(fragment)(其是由甲基、乙基、苯基、三级丁基、及其组合物所组成)。在一具体实例中，该R是不含卤素而含有氢。在另一具体实例中，该R是包含一种或以上的卤元素且含有氢。此等之中，适当的硅源气体是包含：(SiH3)3-N、(SiH3)2N-N(SiH3)2、(SiH3)N＝(SiH3)N、及三硅基胺。
虽然介于气体控制面板136与进口134之间是展示仅布置一气体管线140，但是可预期的是硅源气体和含有氮和碳的化学物是可在分开的气体管线供应至处理腔室100。也可预期的是气体管线可加以控制其温度。此外，又可预期的是可将在步骤206的含碳气体连同在步骤208的含氮和/或含硅化学物一起同时、或依序导入进口134。藉此，步骤206可发生在步骤208之前，或步骤206可发生在步骤208之后。再者，步骤206、208可执行选择性控制化学物计量时间以确保原子层覆盖率，且允许在各步骤之间以吾所欲惰性气体例如氩气进行净化。
由于硅源化学物和含有氮和碳的化学物是在基板处理腔室100中结合，因此在加热的基板122上是形成例如氮化硅(Si3N4)薄膜的含硅材料。所沉积的含硅材料显示具有例如优良的折射率和湿式蚀刻速率等薄膜品质，且沉积速率为大于5/min。在一具体实例中，含硅薄膜是以约10/min至约500/min的速率沉积，且所沉积的厚度为约10至约1,000。如上所述所形成的含硅薄膜显示具有低含氢量，且包含少量的可强化硼保持在PMOS(P信道金属氧半导体)装置中的掺杂碳。在使用不含卤素的硅源气体的具体实例中，可实现改善湿式蚀刻速率。
在步骤206和/或208步骤中，可提供载气(carrier gas)以控制含有氮和碳的化学物和/或硅源化学物的分压为数mTorr至数百Torr，且控制在单晶片腔室中的总压为约100mTorr至约740Torr。在另一具体实例中，在处理腔室中的压力为介于约10Torr与740Torr之间。在批式制程系统中，可供应载气以控制含有氮和碳的化学物和/或硅源化学物的分压为约100mTorr至约1Torr压力。此等之中，适当的载气的实例是包括氮气(N2)、氩气(Ar)、及氦气(He)。
在另一具体实例中，该方法200是包括：在步骤202中，将基板122加热至温度为介于约300与约500℃之间(例如450℃)。在步骤206中，将含有氮和碳的化学物例如(CH3)3-N供应至处理腔室100。含有氮和碳的化学物是以介于约100sccm至约3,000sccm之间(例如约1,000sccm至约2,000sccm)的速率供应。在步骤208中，硅源化学物例如三硅基胺是以介于1sccm至约300sccm之间，或在其它实例则以介于约13sccm至约130sccm之间的速率供应至处理腔室100。在载气是与硅源化学物结合的具体实例中，液体源的总速率为约10sccm至10,000sccm。通常(CH3)3-N对三硅基胺的流量比是维持在约10∶1至约1∶1的比率。在一具体实例中，(CH3)3-N相对于三硅基胺的流量比为3∶1。
视需要可将氧前驱物添加到沉积方法200中，典型为在步骤206和/或步骤208中，以形成氮化硅或氧氮化硅。可使用于本文所揭示的沉积制程中的氧前驱物是包括：氧原子、氧气(O2)、臭氧(O3)、水(H2O)、过氧化氢(H2O2)、有机过氧化物、醇类、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)、五氧化二氮(N2O5)、其衍生物、及其组合物。
当将方法200如上所述实务应用在单晶片处理腔室100中时，则其是允许调整所沉积的薄膜，特别是具有管理且控制薄膜的Si/N/C/H含量的能力。藉由控制薄膜的Si、N、C及H的相对含量，则例如湿式蚀刻速率、干式蚀刻速率、介电常数等的薄膜性能是可加以调整以使其符合特定的应用。例如，藉由降低氢含量，则可沉积获得具有高抗拉应力的薄膜。
除此之外，藉由使用N-Si-R或N-Si-Si-R型之前驱物，则硅源分子的解离是在较低温度下发生，藉此即可使得制程在较低温度下进行。其理由为：与Si-N键相比较，官能基(Si-R或Si-Si)是属于弱键的缘故。此外，在本发明所使用的含氮源化学物是含有碳和氢的官能基，其是可与来自硅源中的N-Si-R或N-Si-Si-R的R或Si-R进行反应，使得R基变成解离，且比并未与氮源化学物反应者更容易加以移除。因此，氮源化学物除了对最终薄膜提供额外的氮和碳源以外，其在本制程中也可作用如同触媒。因此，氮源是有利于促进温度为在例如约550℃以下的低温制程。
使用如上所述方法200所沉积的含硅材料，由于数种物理性质而广泛地使用于电子零组件及装置。含硅-氮材料是一种电绝缘体及阻障材料。当含氮化硅材料是配置介于例如栅极材料与电极之间、或介于低介电常数的多孔性材料与铜之间时，阻障特性会抑制离子在不同的材料或组件之间扩散。因此，含氮化硅材料可使用于阻障层、保护层、偏置层、间隔物层和上盖层(capping layer)。氮化硅材料的其它物理性质是具有高硬度。在某些应用中，含硅材料可用作为各种光学装置及工具等的保护被覆。然而，含氮化硅材料例如氮化硅的其它物理性质是可用作为在氧化硅介电质层下的蚀刻停止层，以精确地控制蚀刻深度，而并不会发生过度蚀刻或蚀刻不足。此外，含硅-氮材料的物理性质是其中碳和氢浓度可用于调整薄膜应力，例如具有吾所欲应用的高抗拉应力。
在某些具体实例中，如第3A-B和4图所示，氮化硅材料是可沉积如同在MOSFET(金属氧半导体场效应晶体管)和双极性晶体管中的各层。例如，图3A是展示氮化硅材料是沉积在一种含有凹入和提高两者的源极/漏极的MOS FET内部。源极/漏极层312是藉由基板310的离子布植法所形成。通常基板310是经掺杂的n型，而源极/漏极层312是经掺杂的p型材料。通常含有硅(Si)、硅锗(SiGe)或硅锗碳(SiGeC)的含硅层313是藉由CVD法选择性地经外延生长在源极/漏极层312上、或直接生长在基板310上。含硅层314也是藉由CVD法选择性地经外延生长在含硅层313上。栅极阻障层318是用以桥接被分段的含硅层313。通常栅极阻障层318可为由氧化硅、氧氮化硅、氧化铪、或铪硅酸盐所组成。局部地围绕栅极阻障层318的是间隔物316，其是通常为例如氯化物/氧化物/氮化物堆(stack)(例如，Si3N4/SiO2/Si3N4)等的隔离材料。另一可行方法是间隔物316可为氮化硅材料的均质层，例如藉由在本文所揭示的各种方法所沉积的氮化硅或氧氮化硅。栅极层322(例如，多晶硅)可具有间隔物316和偏置层320位于任一侧。偏置层320可为藉由在本文所揭示的各种制程所沉积的氮化硅材料(例如氮化硅)材料所组成。
图3B是展示沉积在MOSFET上的用于蚀刻源极/漏极层和栅极接触介层洞(gate contact via)的蚀刻停止层324。蚀刻停止层324可为藉由在本文所揭示的各种制程所沉积的氮化硅材料例如氮化硅所组成。前置-金属介电质层(pre-metal dielectric layer)326(例如，氧化硅)是沉积在蚀刻停止层324上，且包含在其上所形成的接触孔介层洞(contact hole vias)328。
在另一具体实例中，图4是展示在本发明的各具体实例中，所沉积的作为在双极性晶体管内的数层的氮化硅材料。含硅化合物层434是沉积在先前已沉积在基板430的n-型集极层(collector layer)432上。晶体管进一步又包括：隔离层433(例如，SiO2、SiOxNy、或Si3N4)、接触层436(例如，经大量掺杂的多晶硅)、偏置层438(例如，Si3N4)、及第二隔离层440(例如，SiO2、SiOxNy或Si3N4)。隔离层433和440、及偏置层438是可藉由在本文所揭示的各种制程各自独立地沉积例如氧氮化硅、碳氮化硅、和/或氮化硅等作为氮化硅材料。在一具体实例中，隔离层433和440是含有氧氮化硅，且偏置层438是含有氮化硅。
如上所述，本发明已提供一种用于沉积例如氮化硅等的含硅层的方法。如上所述的方法是适合于制造具有小的临界尺寸(critical dimension)且要求低热预算(由于使用沉积低于约550℃以下的温度)的装置，其是可有利地使用次90奈米技术来制造稳固的电路。
如上所述，本发明可提供一种用于沉积如氮化硅等的含硅层的方法。在前面揭示的方法，适合于具有小的关键尺寸且由于使用低于约550℃的沉积温度而要求低热预算的装置的制造。其是有利于使用次90奈米技术来制造坚固电路。
虽然如前所述是用于引导本发明的具体实例，但是可设计本发明的其它及进一步的具体实例，而并不会脱离其基本的范围，且该范围是根据如下所述权利要求加以设定。

Claims (29)

1.一种将含硅薄膜沉积在基板上的方法，其是包括下列步骤：
将位于处理腔室内的基板加热至低于约550℃以下的温度；
将含有氮和碳的化学物流入该处理腔室；
将具有硅-氮键的含硅源化学物流入该处理腔室；及
将含有硅和氮的薄膜沉积在该基板上。
2.如权利要求1所述的方法，其中该含硅源化学物是(SiR3)3-N、(SiR3)2N-N(SiR3)2、及(SiR3)N＝(SiR3)N中的至少一种，其中R是氢(H)、或碳氢化合物试剂、或是一碎片(fragment)(其是由甲基、乙基、苯基、三级丁基及其组合物所组成群组中选出)。
3.如权利要求2所述的方法，其中该R是不含卤素而含有氢。
4.如权利要求2所述的方法，其中该R是包含一或多卤素元素。
5.如权利要求1所述的方法，其中该含硅源化学物是(SiH3)3-N。
6.如权利要求1所述的方法，其中该含硅源化学物是(SiH3)2N-N(SiH3)2。
7.如权利要求1所述的方法，其中该含硅源化学物是(SiH3)N＝(SiH3)N。
8.如权利要求1所述的方法，其中该含硅源化学物是三硅基胺。
9.如权利要求1所述的方法，其中该含有氮和碳的化学物的化学式是R(C)-CXNYR(N)，其中该R(C)是氢或其它碳氢化合物基，且R(N)是氮或其它含氮化合物基。
10.如权利要求1所述的方法，其中该含有氮和碳的气体是H3C-NH2
11.如权利要求1所述的方法，其中该含有氮和碳的气体是甲胺。
12.如权利要求1所述的方法，其中该含有氮和碳的化学物是H3C-NH-NH2。
13.如权利要求1所述的方法，其中该含有氮和碳的化学物是甲基联胺。
14.如权利要求1所述的方法，其中该含有氮和碳的化学物是(H3C)-N＝N-H。
15.如权利要求1所述的方法，其中该含有氮和碳的化学物是HC≡N。
16.如权利要求1所述的方法，其中该含有氮和碳的化学物是在室温下具有高蒸气压、可在500℃以下解离的含有碳、氮和氢的化合物。
17.如权利要求1所述的方法，其中该含有氮和碳的化学物是CH5N、CH6N2和CHN中的至少一种。
18.如权利要求1所述的方法，其中该加热基板的步骤更包括：
将基板加热至介于约300℃至约500℃间的温度；及
将处理腔室内的压力维持在约10Torr至740Torr之间。
19.如权利要求1所述的方法，其更包括：
将一氧前驱物流入处理腔室的步骤。
20.如权利要求1 9所述的方法，其中该氧前驱物是氧原子、氧气(O2)、臭氧(O3)、水(H2O)、过氧化氢(H2O2)、有机过氧化物、醇类、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)、五氧化二氮(N2O5)、及其衍生物中的至少一种。
21.如权利要求1所述的方法，其中该含硅源化学物是(SiR3)3-N、(SiR3)2N-N(SiR3)2、及(SiR3)N＝(SiR3)N中的至少一种，其中该R是氢(H)、碳氢化合物试剂、或由甲基、乙基、苯基、三级丁基、及其组合物所组成的碎片；且其中该含有氮和碳的化学物的化学式为R(C)-CXNYR(N)，其中该R(C)是氢或其它碳氢化合物基，且R(N)是氮或其它含氮化合物基。
22.如权利要求21所述的方法，其中该加热基板的步骤更包括：
将基板加热至介于约300℃至约500℃间的温度的步骤。
23.如权利要求1所述的方法，其中该沉积含硅薄膜的步骤更包括：
沉积一单原子层的含硅材料的步骤。
24.一种将含硅层沉积在基板上的方法，其是包括下列步骤：
将位于处理腔室内的基板加热至550℃以下的温度；
将该处理腔室内的压力维持在约10Torr至约740Torr之间；
将(CH3)3-N流入该处理腔室；
以氩气净化该处理腔室；
将三硅基胺流入该处理腔室；
以氩气净化该处理腔室；及
沉积含有硅和氮的层在该基板上。
25.如权利要求24所述的方法，其中该加热基板的步骤更包括：
将基板加热至介于约400℃至约500℃之间的温度的步骤。
26.如权利要求24所述的方法，其中该加热基板的步骤更包括：
将基板加热至低于约450℃以下的温度的步骤。
27.如权利要求24所述的方法，其更包括：
将一氧前驱物流入处理腔室的步骤。
28.如权利要求27所述的方法，其中该氧前驱物是氧原子、氧气(O2)、臭氧(O3)、水(H2O)、过氧化氢(H2O2)、有机过氧化物、醇类、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)、五氧化二氮(N2O5)、及其衍生物中的至少一种。
29.如权利要求1所述的方法，其中该含有氮和碳的气体是(CH3)3-N。
CNA2006800218397A 2005-06-17 2006-06-05 硅基电介质的化学气相沉积方法 Pending CN101199044A (zh)

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