CN101159253A - Metallic layer structure under projection, crystal round structure and forming method of the same - Google Patents
Metallic layer structure under projection, crystal round structure and forming method of the same Download PDFInfo
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- CN101159253A CN101159253A CN 200710167276 CN200710167276A CN101159253A CN 101159253 A CN101159253 A CN 101159253A CN 200710167276 CN200710167276 CN 200710167276 CN 200710167276 A CN200710167276 A CN 200710167276A CN 101159253 A CN101159253 A CN 101159253A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention discloses an under-projection metal layer structure and a wafer structure and a forming method of the wafer structure. The under-projection metal layer comprises an adhesion layer, an obstruction layer, and a moistening layer. The adhesion layer is equipped on a connection pad of the wafer, the obstruction layer is equipped on the adhesion layer, and the moistening layer is equipped on the obstruction layer. The adhesion layer is made of boron-containing nickel, the obstruction layer is made of cobalt, and the moistening layer is made of gold.
Description
[technical field]
The invention relates to the formation method of a kind of projection lower metal layer structure, crystal circle structure and this crystal circle structure, and particularly relevant for a kind of formation method of utilizing projection lower metal layer structure, crystal circle structure and this crystal circle structure of electroless deposition technique formation.
[background technology]
In semiconductor packaging, common chip interconnection technique comprises that flip-chip bonded (flip chip), routing engage (wire bonding) and winding engages modes such as (tape automated bonding) automatically, so that chip and substrate are electrically connected.Wherein the flip-chip bonded technology utilizes solder projection (solder bump) as the media that electrically connects between chip and substrate, compared to the mode that routing engages and winding engages automatically, the flip-chip bonded technology has short electrical connection path, and have preferable electric connection quality, make projection more and more be widely used in the semiconductor packaging.
In traditional projection formation method, with a projection lower metal layer (Under Bump Metallurgy, UBM) be formed on the chip surface, and cover on the copper pad of chip surface, the mode of general using sputter (sputtering) or plating (electroplating) forms the projection lower metal layer.Then be coated with steps such as photoresist layer, gold-tinted etching, make the size of projection lower metal layer approximately corresponding to the size of copper pad.Then, photoresist layer is peeled off, and on the projection lower metal layer print solder paste.At last, the reflow tin cream make that the tin particles in the tin cream is fused into tin soup, and cooling curing becomes projection.
The formation method of tradition projection has complicated fabrication steps, can't reduce the processing procedure cost effectively, so industry develops and a kind ofly need not carry out the etched projection of gold-tinted formation method.This gold-tinted etching step ground projection formation method that do not need, be included in (electroless plating) nickel of electroless-plating on the copper pad (nickel) layer, and on nickel dam the step of electroless-plating palladium (palladium) layer, and then to form for example be the wettable layer of gold copper-base alloy.Then, the step by printing and reflow forms projection.Electroless nickel plating is a kind of chemical reduction reaction, utilize reducing agent (as sodium hypophosphite) in the solution with the nickel ion reduce deposition on catalytic surface.Therefore aspect interfacial reaction,, be widely adopted in Electronic Packaging, in solder bump, to play the part of the role of a diffusion barrier because that electroless nickel plating blocks for the diffusion of copper is respond well.In the step of electroless-plating nickel dam, generally wafer (wafer) is immersed in the plating bath, provide nickel ion by nickelous sulfate (NiSO4) in the plating bath, and by sodium hypophosphite (NaH2PO2) as reducing agent so that nickel ion is reduced to the nickel metal, and carry out self-catalyzed reaction (autocatalytic reaction) with the nickel metal as catalyst, plate a phosphorous nickel dam (Ni-P) thereby on aluminium or copper pad, analyse.The mode of this electroless-plating has advantages such as thickness of coating is even, porosity is low, crystallization is careful, hardness is high, good weldability.Yet, because this electroless-plating processing procedure is subjected to plating bath constituent and parameter condition influence such as concentration, operating temperature and pH-value thereof, when for example carrying out high temperature fabrication steps such as reflow tin cream, easily because temperatures involved, interface between tin cream and nickel dam form a rich phosphorus crystalloid Jie metal phase (Inter-Metallic Compound, IMC).In the displacement reaction of electroless-plating, when the less nickle atom of size is molten when walking (oxidation), have two gold atom depositions (reduction) that relative size is very big, when growing up, can cause lattice the difference row (Misalignment) of pushing property comprehensively like this, thereby make that a lot of spaces occurring in the interface of nickel and gold dredges the hole, even keep solution etc., and cause the continuation passivation and the oxidation of nickel dam easily, make interface quality be affected.In addition, when the phosphorus amount is higher in the nickel dam, cause the reduction of weldering property easily, therefore the general practice is that phosphorus content is controlled between 7～9%.Below be that example describes with the interface of projection and phosphorous nickel dam, Fig. 1 and Fig. 4 simultaneously, Fig. 1 illustrates the schematic diagram of interface between traditional projection and the electroless-plating nickel dam, Fig. 4 is that the electronics of Fig. 1 scans photography photo.By electronics scan photography (Scanning Electron Microscopy, SEM) and constituent analysis as can be known, crystalloid Jie metal that 101 of projection 103 and phosphorous nickel dams form rich phosphorus mutually 102.Because crystalloid Jie metal of rich phosphorus phase 102 has easily crisp characteristic, make projection 103 and chip chamber joint strength reduce.When carrying out chips welding, sealing or product test, rupture in this crystalloid Jie metal phase 102 easily, reduced the yield and the reliability of product.
[summary of the invention]
Main purpose of the present invention is to propose the formation method of a kind of projection lower metal layer structure, crystal circle structure and this crystal circle structure, and it can improve joint strength, further promotes the reliability and the quality of product.
For reaching aforementioned purpose of the present invention, the present invention proposes a kind of projection lower metal layer structure, comprises an adhesion layer, a barrier layer and a wettable layer.Adhesion layer is arranged on the connection pad of a wafer, and the material of adhesion layer is the nickel of boracic.Barrier layer is arranged on the adhesion layer, and the material of barrier layer is a cobalt.Wettable layer is arranged on the barrier layer, and the material of wettable layer is a gold.
The present invention also proposes a kind of crystal circle structure, comprises a wafer, a connection pad, a passivation layer and a projection lower metal layer.Connection pad is arranged on the wafer, and passivation layer covers wafer and exposes the part connection pad.The projection lower metal layer comprises an adhesion layer, a barrier layer and a wettable layer.Adhesion layer is arranged on the connection pad, and the material of adhesion layer is the nickel of boracic.Barrier layer is arranged on the adhesion layer, and the material of barrier layer is a cobalt.Wettable layer is arranged on the barrier layer, and the material of wettable layer is a gold.
The present invention reintroduces a kind of formation method of crystal circle structure.At first, provide a wafer, the surface of wafer is provided with a connection pad and is coated with a passivation layer, and passivation layer exposes the part connection pad.Secondly, electroless-plating one adhesion layer on connection pad, the material of adhesion layer is the nickel of boracic.Then, electroless-plating one barrier layer on adhesion layer, the material of barrier layer is a cobalt.Then, form a wettable layer on barrier layer, the material of wettable layer is a gold.
Compared to prior art, the formation method of projection lower metal layer structure of the present invention, crystal circle structure and this crystal circle structure is utilized nickel, cobalt and the gold of the boracic material as adhesion layer, barrier layer and wettable layer respectively, make between the connection pad of projection and wafer through after the step of thermal cycle, can not generate easily crisp Jie's metal phase, promote the mechanical strength of contact, further improved reliability of products.Secondly, form, can reduce fabrication steps, also saved manufacturing cost because adhesion layer, barrier layer and wettable layer are modes with electroless-plating.Moreover, utilize the material of cobalt as barrier layer, utilize the mode of palladium compared to tradition as barrier layer materials, can reduce cost and improve electrical performance.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
[description of drawings]
Fig. 1 illustrates the schematic diagram of interface between traditional projection and the electroless-plating nickel dam;
Fig. 2 A illustrates the schematic diagram that connection pad and passivation layer are set on a Silicon Wafer (silicon wafer) surface according to preferred embodiment of the present invention;
Fig. 2 B illustrates the schematic diagram that forms adhesion layer on the wafer of Fig. 2 A;
Fig. 2 C illustrates the schematic diagram that forms barrier layer on the adhesion layer of Fig. 2 B;
Fig. 2 D illustrates the schematic diagram that forms wettable layer on the barrier layer of Fig. 2 C;
Fig. 2 E illustrates the schematic diagram that forms solder layer on the wettable layer of Fig. 2 D;
Fig. 3 illustrates the schematic diagram according to the crystal circle structure of preferred embodiment of the present invention;
Fig. 4 is that the electronics of Fig. 1 scans photography photo; And
Fig. 5 is that the electronics according to the projection lower metal layer of preferred embodiment of the present invention and projection interface scans photography photo.
[embodiment]
Crystal circle structure according to preferred embodiment of the present invention comprises a wafer, a connection pad, a passivation layer and a projection lower metal layer.Connection pad is arranged on the surface of wafer in the present embodiment, and passivation layer covers the connection pad of crystal column surface and expose portion.The projection lower metal layer is arranged on the connection pad, and comprises an adhesion layer, a barrier layer and a wettable layer.Details are as follows according to the formation method of the crystal circle structure of present embodiment.
Please be simultaneously with reference to Fig. 2 A to Fig. 2 E, Fig. 2 A illustrates the schematic diagram according to the wafer of preferred embodiment of the present invention; Fig. 2 B illustrates the schematic diagram that forms adhesion layer on the wafer of Fig. 2 A; Fig. 2 C illustrates the schematic diagram that forms barrier layer on the adhesion layer of Fig. 2 B; Fig. 2 D illustrates the schematic diagram that forms wettable layer on the barrier layer of Fig. 2 C; Fig. 2 E illustrates the schematic diagram that forms solder layer on the wettable layer of Fig. 2 D.Formation method according to the crystal circle structure of preferred embodiment of the present invention at first provides a wafer 12, shown in Fig. 2 A.Wafer 12 is preferably a Silicon Wafer (silicon wafer) in the present embodiment, and its surface is provided with a connection pad 14 and a passivation layer (passivation layer) 16.The material of connection pad 14 for example is copper (copper) or aluminium (aluminum), as the electrical contact on the wafer 12.Passivation layer 16 covers on the wafer 12, and has a contact hole (contact windows) 16a, with the connection pad 14 of expose portion.
Secondly, electroless-plating on connection pad 14 (electroless plating) adhesion layer 22.Before electroless-plating adhesion layer 22, preferably connection pad 14 is carried out surface treatment.The oxide (for example cupric oxide) and the organic and inorganic material on connection pad 14 surfaces are removed, and utilize zinc (zinc) for example or cobalt materials such as (cobalt) to carry out the surface active (activation) of connection pad 14, then wafer 12 is immersed in the plating bath of nickel boron, to carry out the electroless-plating of adhesion layer 22.In the present embodiment, in the plating bath of electroless-plating, utilize the self-catalyzed reaction of nickel metal, the nickel (Ni-B) of plating boracic is analysed on connection pad 14 surfaces after activation.Formed herein nickel boron material layer is adhesion layer 22, and the thickness of its formation is approximately 1～15 micron (um).
Then, shown in Fig. 2 C, electroless-plating one barrier layer 24 on adhesion layer 22, in order to the nickel metal that stops adhesion layer 22 to outdiffusion.The thickness of barrier layer 24 is approximately 0.15～7.5 micron in the present embodiment, and preferably with the material of cobalt (Co) as barrier layer 24, compared to the material that utilizes palladium as barrier layer 24, the barrier layer 24 of cobalt material has lower material cost, and can improve the electrical contact performance of 14 of projection that successive process forms and connection pads.
Shown in Fig. 2 D, on barrier layer 24, then form a wettable layer 26.Wetting layer 26 is oxidized in order to prevent barrier layer 24, improves the wettability for projection simultaneously.In the present embodiment, the material of wettable layer 26 is a gold (Au), and preferably is formed on the barrier layer 24 in the mode of electroless-plating, and its thickness is approximately 0.05～0.15 micron.Right wettable layer 26 also can for example be to utilize the mode of immersion plating (immersionplating) to be formed on the barrier layer 24.Form after the wettable layer 26, adhesion layer 22, barrier layer 24 and wettable layer 26 constitute a projection lower metal layer (Under Bump Metallurgy, UBM) 20.
Come again, form a solder layer 30 on wettable layer, shown in Fig. 2 E.In the present embodiment, solder layer 30 printing (printing) is on wettable layer 26, and its material preferably be gold, and the material of right solder layer 30 also can be tin (Sn), lead (Pb), nickel, gold, silver (Ag), copper or its combination.
Next the formation method of the crystal circle structure of present embodiment carries out the step of reflow solder layer 30, and solder layer 30 is through forming a projection after the reflow.The technical staff of the technical field of the invention can understand the mode that the mode that forms projection is not restricted to above-mentioned utilization printing and reflow, and projection also can utilize the mode of directly planting ball to be formed on the projection lower metal layer.The step of planting ball can for example be to utilize ball attachment machine platform or mechanical arm to carry out, and it directly is placed on the projection correspondence on the projection lower metal layer, and utilize scaling powder with bump bond on the projection lower metal layer.Perhaps, also can utilize web plate to carry out the contraposition of projection, the projection correspondence is positioned on the projection lower metal layer, utilize equally then scaling powder with bump bond on the projection lower metal layer.Yet what other was used always in this field all can be applicable to this with the method for bump bond on the projection lower metal layer.
Finish crystal circle structure behind the formation projection according to preferred embodiment of the present invention.Please refer to Fig. 3, it illustrates the schematic diagram according to the crystal circle structure of preferred embodiment of the present invention.Crystal circle structure 1 00 comprises wafer 12, connection pad 14, passivation layer 16, projection lower metal layer 20 and projection 30 '.Projection lower metal layer 20 comprises adhesion layer 22, barrier layer 24 and wettable layer 26.
In the present embodiment, adhesion layer 22, barrier layer 24 and wettable layer 26 are the electroless-plating layer, and when carrying out the electroless-plating of projection lower metal layer 20 each material layer in plating bath, these material layers have approximately identical width.After projection lower metal layer 20 forms, do not need to be coated with again photoresistance, gold-tinted and etched step.In addition, the material of adhesion layer 22 is the nickel of boracic in the projection lower metal layer 20, when crystal circle structure 100 was heat-treated relevant fabrication steps, for example reflow solder layer 30 can avoid forming crystalloid Jie metal phase of rich phosphorus when forming projection 30 ' between projection 30 ' and contact 14.Please be simultaneously with reference to Fig. 5, it is for to scan photography photo according to the projection lower metal layer of preferred embodiment of the present invention and the electronics of projection interface.By experiment and the constituent analysis result learn, do not generate easily crisp rich phosphorus crystalloid Jie metal mutually between projection lower metal layer 20 and projection 30 ', and contact structure is smooth, make to have the good character that engages between projection lower metal layer 20 and projection 30 ', further promoted the stability that projection 30 ' engages with connection pad 14.
In addition, the material of barrier layer 24 is a cobalt in the present embodiment, utilizes the material of palladium as barrier layer compared to tradition, has lower material cost.Moreover measurement result is learnt by experiment, and the sheet resistance value of the projection lower metal layer of traditional nickel/palladium/golden structure is compared to the approximately increase by 8.6% of projection lower metal layer of nickel/cobalt/golden structure.Therefore, compared to the barrier layer of traditional palladium material, the barrier layer 24 of cobalt material has more preferable electrical performance in the present embodiment.
On the other hand, in the formation method of above-mentioned crystal circle structure according to preferred embodiment of the present invention, be with a connection pad 14 and corresponding to form a projection lower metal layer 20 be that example is done explanation.Yet, in actual applications, the surface of wafer 12 preferably has the connection pad 14 that a plurality of arrays are arranged, and it is preceding to cut list (wafer sawing) at wafer 12, utilizes processing procedure a plurality of projection lower metal layers 20 of corresponding formation on connection pad 14 of crystal circle grade (wafer level).Further, formation method according to the crystal circle structure of preferred embodiment of the present invention, (Wafer Level Chip SizePackage is WLCSP) in technology and Flip-Chip Using (the flip chip package) technology for example to be applied to the wafer stage chip encapsulation.
The formation method of above-mentioned projection lower metal layer structure, crystal circle structure and this crystal circle structure according to preferred embodiment of the present invention, utilize nickel, cobalt and the gold of boracic material respectively as adhesion layer, barrier layer and wettable layer, make between the connection pad of projection and wafer through after the step of thermal cycle, can not generate easily crisp Jie's metal phase, promote the mechanical strength of contact, further improved reliability of products.Secondly, form, can reduce fabrication steps, also saved manufacturing cost because adhesion layer, barrier layer and wettable layer are modes with electroless-plating.Moreover, utilize the material of cobalt as barrier layer, utilize the mode of palladium compared to tradition as barrier layer materials, can reduce cost and improve electrical performance.
Claims (10)
1. projection lower metal layer structure, comprise: an adhesion layer, a barrier layer and a wettable layer, wherein adhesion layer is arranged on the connection pad of a wafer, barrier layer is arranged on this adhesion layer, and wettable layer is arranged on this barrier layer, it is characterized in that: the material of this adhesion layer is the nickel (Ni-B) of boracic, and this barrier layer materials is cobalt (Co), and the material of this wettable layer is a gold (Au).
2. projection lower metal layer structure as claimed in claim 1, it is characterized in that: this adhesion layer is electroless-plating layer (electroless plating layer), its thickness is approximately 1～15 micron (um), this barrier layer is the electroless-plating layer, its thickness is approximately 0.15～7.5 micron, this wettable layer is electroless-plating layer or immersion plating layer (immersion plating layer), and its thickness is approximately 0.05～0.15 micron.
3. crystal circle structure, comprise: a wafer, a connection pad, a passivation layer and a projection lower metal layer, wherein this connection pad is arranged on this wafer, this passivation layer covers this wafer and exposes the connection pad of part, this projection lower metal layer comprises: an adhesion layer, a barrier layer and a wettable layer, wherein this adhesion layer is arranged on this connection pad, barrier layer is arranged on this adhesion layer, wettable layer is arranged on this barrier layer, it is characterized in that: the material of this adhesion layer is the nickel of boracic, the material of this barrier layer is a cobalt, and the material of this wettable layer is a gold.
4. crystal circle structure as claimed in claim 3, it is characterized in that: this adhesion layer is the electroless-plating layer, thickness is approximately 1～15 micron, this barrier layer is the electroless-plating layer, thickness is approximately 0.15～7.5 micron, this wettable layer is electroless-plating layer or immersion plating layer, and thickness is approximately 0.05～0.15 micron.
5. crystal circle structure as claimed in claim 3 is characterized in that: this structure also comprises: one is arranged on the projection (bump) on this wettable layer, and the material of this projection is tin (Sn), plumbous (Pb), nickel, gold, silver (Ag), copper or its combination.
6. the formation method of a crystal circle structure, comprising: a wafer is provided, and the surface of this wafer is provided with a connection pad and is coated with a passivation layer, and this passivation layer exposes the part connection pad; Electroless-plating on this connection pad (electroless plating) adhesion layer; Electroless-plating one barrier layer on this adhesion layer; And on this barrier layer, form a wettable layer, and it is characterized in that: the material of this adhesion layer is the nickel (Ni-B) of boracic, and the material of this barrier layer is cobalt (Co), the material of this wettable layer is a gold (Au).
7. the formation method of crystal circle structure as claimed in claim 6, it is characterized in that: the thickness of this adhesion layer is approximately 1～15 micron, and the thickness of this barrier layer is approximately 0.15～7.5 micron, and the thickness of this wettable layer is approximately 0.05～0.15 micron.
8. the formation method of crystal circle structure as claimed in claim 6 is characterized in that: in the step that forms this wettable layer, this wettable layer is that electroless-plating or immersion plating (immersion plating) are on this barrier layer.
9. the formation method of crystal circle structure as claimed in claim 6, it is characterized in that: this method also comprises: printing one solder layer on this wettable layer; And this solder layer of reflow is to form a projection.
10. the formation method of crystal circle structure as claimed in claim 6, it is characterized in that: this method also comprises: utilize the mode of directly planting ball that one projection is arranged on this wettable layer.
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| CN 200710167276 CN101159253A (en) | 2007-10-31 | 2007-10-31 | Metallic layer structure under projection, crystal round structure and forming method of the same |
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| CN 200710167276 CN101159253A (en) | 2007-10-31 | 2007-10-31 | Metallic layer structure under projection, crystal round structure and forming method of the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132383A (en) * | 2008-08-29 | 2011-07-20 | 应用材料股份有限公司 | Cobalt deposition on barrier surfaces |
| US8563424B2 (en) | 2001-07-25 | 2013-10-22 | Applied Materials, Inc. | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US8815724B2 (en) | 2001-07-25 | 2014-08-26 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| CN108231728A (en) * | 2016-12-12 | 2018-06-29 | 英飞凌科技奥地利有限公司 | Semiconductor devices, electronic building brick and method |
| CN108538735A (en) * | 2017-03-02 | 2018-09-14 | 中芯国际集成电路制造(上海)有限公司 | Metal coupling device and its manufacturing method |
-
2007
- 2007-10-31 CN CN 200710167276 patent/CN101159253A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8563424B2 (en) | 2001-07-25 | 2013-10-22 | Applied Materials, Inc. | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US8815724B2 (en) | 2001-07-25 | 2014-08-26 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US9209074B2 (en) | 2001-07-25 | 2015-12-08 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| CN102132383A (en) * | 2008-08-29 | 2011-07-20 | 应用材料股份有限公司 | Cobalt deposition on barrier surfaces |
| CN108231728A (en) * | 2016-12-12 | 2018-06-29 | 英飞凌科技奥地利有限公司 | Semiconductor devices, electronic building brick and method |
| US11380612B2 (en) | 2016-12-12 | 2022-07-05 | Infineon Technologies Austria Ag | Semiconductor device, electronic component and method |
| CN108538735A (en) * | 2017-03-02 | 2018-09-14 | 中芯国际集成电路制造(上海)有限公司 | Metal coupling device and its manufacturing method |
| CN108538735B (en) * | 2017-03-02 | 2020-05-29 | 中芯国际集成电路制造(上海)有限公司 | Metal bump device and manufacturing method thereof |
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Open date: 20080409 |