CN101155648B - 衬底表面和室表面的蚀刻剂处理工艺 - Google Patents
衬底表面和室表面的蚀刻剂处理工艺 Download PDFInfo
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Abstract
本发明的一种实施方式提供了一种处理含硅表面的方法,该方法包括通过慢蚀刻工艺(例如,约<100/min)去除污染物和/或平滑衬底表面。将衬底暴露于包含蚀刻剂和硅源的蚀刻气体。优选地,蚀刻剂为氯气,并将衬底加热至小于约800℃的温度。在另一种实施方式中,提供了一种快蚀刻工艺(例如,约>100/min),该工艺包括去除硅材料,同时在衬底表面的源极/漏极(S/D)区域内形成凹槽。在另一种实施方式中,提供了一种清洁处理室的方法,该方法包括将处理室内表面暴露于包含蚀刻剂和硅源的室清洁气体。该室清洁工艺限制了对处理室内部的石英和金属表面的蚀刻。
Description
技术领域
本发明的实施方式一般性地涉及电子制造工艺和器件,更具体地,本发明的实施方式涉及形成电子器件时蚀刻和沉积含硅材料的方法。
背景技术
诸如半导体器件之类的电子器件是通过包括沉积和去除含硅材料的一系列步骤制造的。沉积和去除步骤以及其它工艺步骤可能会导致包含含硅材料的衬底表面变粗糙和/或暴露于污染物。而且,在沉积和去除步骤中,颗粒和其它污染物积聚在处理室的内表面上。最终,这些颗粒会进一步污染衬底表面。粗糙或被污染的衬底表面通常造成界面质量差,这会导致器件性能和可靠性较差。
为了克服衬底表面上的污染物和粗糙度问题,已经开发出了蚀刻工艺。然而,传统的蚀刻工艺具有一些不足。通常,为了去除含硅材料,例如氯化氢(HCl)的蚀刻剂需要较高的活化温度。因此,蚀刻工艺常常在1000℃或更高的温度下进行。这样的高温在制造工艺过程中是不期望的,原因在于以下几个方面:热预算考虑、可能失控的氮化反应或对衬底表面的过度蚀刻以及经济效率的下降。具有这种极端添加的蚀刻工艺损害处理室的内表面,例如热石英衬里。与使用氯化氢蚀刻剂的工艺相比,使用氯(Cl2)在更低温度下的蚀刻工艺中去除含硅材料。然而,氯与含硅材料反应很快,所以不容易控制蚀刻速率。因此,使用氯气的工艺通常对含硅材料造成过度蚀刻。
此外,传统蚀刻工艺一般在蚀刻室或热处理室中进行。一旦含硅材料的蚀刻完成,衬底即被转移到用于后续沉积步骤的第二室中。通常,衬底在蚀刻工艺与沉积工艺之间暴露于周围环境。周围环境可将水和/或氧引到衬底表面,形成氧化物层。
在蚀刻工艺或沉积工艺之前,通常将衬底暴露于预处理工艺,所述预处理工艺包括湿法清洁工艺(例如,HF最后(HF-last)工艺)、等离子体清洁或酸洗涤工艺。在预处理工艺之后并且在蚀刻工艺开始之前,衬底不得不在处理室或受控环境外部停留被称为排队时间(Q时间)的一段时间。在Q时间期间,衬底暴露于周围环境条件,这种条件包含大气压和室温下的氧和水。此周围暴露会在衬底表面形成氧化物层,例如氧化硅。通常,Q时间越长形成的氧化物层越厚,因此,为了维持吞吐量,必须在更高的温度和压力下进行更加极端的蚀刻工艺。
因此,需要一种蚀刻工艺,用于处理衬底表面上的含硅材料,以去除其上包含的任何污染物和/或使衬底表面平滑。还需要,能够在处理室中处理衬底表面,而该处理室可以随后用于下一工艺步骤,例如沉积外延层。此外,需要将工艺温度保持低温,例如低于1000℃、优选低于800℃,即使是对于已经经受较长Q时间(例如,约10小时)的衬底。而且,需要在不损坏处理室的内表面的条件下减少颗粒在这些内表面上的积累。
发明内容
在一种实施方式中,提供了一种加工或处理含硅表面的方法,该方法包括平滑所述表面和去除所述表面上包含的污染物。在一个实施例中,将衬底置于处理室中,并加热至约500-700℃的温度。将衬底暴露于含蚀刻剂、硅源和载气的蚀刻气体中。可以使用氯气(Cl2)作为蚀刻剂,从而在蚀刻工艺过程中使用相对低的温度。硅源通常与蚀刻剂同时提供,目的是抑制由蚀刻剂所致的过度蚀刻。即,使用硅源在衬底表面沉积硅,而蚀刻剂用于去除所述硅。调节蚀刻剂和硅源暴露于衬底的速率,以使总反应有利于材料去除和/或再分布。因此,在一个实施例中,在总反应期间去除含硅材料的同时,可以精细地控制蚀刻速率(例如,每分钟数埃或更少)。在另一个实施例中,在再分布过程中,含硅材料从表面的较高部分(即,峰)去除,同时添加至表面的较低部分(即,谷)。表面粗糙度为约6nmRMS(均方根)或更大的含硅表面可以转化为表面粗糙度小于约0.1nmRMS的更加光滑的表面。
在另一种实施方式中,提供了一种蚀刻含硅表面的方法,该方法包括快速去除含硅材料,以在衬底上的源极/漏极(S/D)区域形成凹槽。在另一种实施例中,将衬底置于处理室中,并加热至约500-800℃的温度。当衬底被加热时,将含硅表面暴露于含蚀刻剂和载气的蚀刻气体中。可以选择氯气作为快速蚀刻工艺中的蚀刻剂,这种工艺通常不包含硅源或包含低浓度的硅源。可在蚀刻气体中加入硅源,从而对去除速率进行额外的控制。
在另一种实施方式中,在室清洁工艺中,通过将处理室的内表面暴露于蚀刻气体以去除颗粒和其它污染物,由此对处理室进行清洁。内表面通常包含会在蚀刻剂清洁工艺中被损坏的含硅材料(例如,石英)。因此,除了蚀刻剂和载气以外,蚀刻气体还可包含硅源,以抑制由蚀刻剂造成的过度蚀刻。在一个实施例中,室清洁气体包含氯气和硅烷。例如氮气的载气可与蚀刻剂、硅源或两者结合。通常,与慢蚀刻工艺或快蚀刻工艺相比,在室清洁工艺中,处理室被加热至更高的温度。在一个实施例中,处理室可在室清洁工艺中被加热至约700-1000℃的温度。
在另一种实施方式中,提供了一种在衬底表面形成含硅材料的方法,该方法包括将包含硅材料的衬底定位在处理室中以及在蚀刻工艺中将所述衬底暴露于包含氯气和硅烷的蚀刻气体。该方法还包括:在外延沉积工艺中将衬底暴露于包含氯气的沉积气体;从处理室去除衬底;以及在室清洁工艺中将处理室暴露于包含氯气和硅烷的室清洁气体。在一个实施例中,在蚀刻工艺中,以约100/min或更小的速率、优选以约10/min或更小的速率、更优选以2/min或更小的速率去除硅材料。在另一个实施例中,在蚀刻工艺中,以大于100/min的速率、优选以约200-1000/min的速率去除硅材料。
在另一种实施方式中,提供了一种在具有至少第二材料(例如,氮化物材料、氧化物材料或其组合)的衬底上蚀刻含硅单晶材料的方法,该方法包括:将衬底定位在处理室中;将所述衬底暴露于包含氯气和载气的蚀刻气体;去除预定厚度的所述含硅单晶材料以形成暴露单晶表面;以及在处理室中在所述暴露单晶表面上形成外延层。蚀刻气体可以包括硅源,例如硅烷、二硅烷、二氯硅烷、四氯硅烷、六氯二硅烷、其衍生物或其组合;载气可以包括氮、氩、氦或其组合。在一个实施例中,将处理室加热至约500-700℃,并加压至约10-750Torr。可以以约200-1000/min的速率去除单晶材料,以在衬底上的源极/漏极区域内形成凹槽形态。源极/漏极区域可以用在CMOS、Bipolar、BiCMOS或类似器件中。外延层通常包含硅,硅锗、硅碳、硅锗碳、其衍生物或其组合。
在另一种实施方式中,提供了一种在衬底上形成含硅单晶材料的方法,该方法包括:将衬底暴露于最后HF湿清洁工艺;将所述衬底定位在处理室中;将所述衬底暴露于包含氯气和载气的蚀刻气体;以及去除预定厚度的所述含硅单晶材料,以形成暴露单晶表面。该方法可以进一步提供在处理室中在暴露电单晶表面上沉积外延层以及用氯气清洁处理室以去除其上粘附的含硅污染物。外延层可以通过包含氯气的沉积气体来沉积,载气可以是氮气。在一个实施例中,氮气和氯气在处理室清洁步骤中一起流动。
附图说明
为了能够详细理解本发明的上述特点,以下通过参考附图所示的实施方式对上面概述的本发明进行更具体的描述。然而应当注意到,附图仅说明了本发明的典型实施方式,因而不应看作是对其范围的限制,本发明可容许其它等同有效的实施方式。
图1为示出了根据本文所述的一种实施方式的处理含硅材料的工艺的流程图;
图2A-2C示出了本文所述的工艺中的不同阶段的衬底的示意图;
图3为示出了根据本文所述的一种实施方式的处理含硅材料的工艺的流程图;
图4A-4C示出了本文所述的工艺中的不同阶段的另一个衬底的示意图;
图5为示出了根据本文所述的一种实施方式的制造衬底随后清洁处理室的工艺的流程图。
具体实施方式
本发明的实施方式提供了在衬底表面上蚀刻和沉积含硅材料的工艺。在一种实施方式中,慢蚀刻工艺(例如,<100/min)和快蚀刻工艺(例如,>100/min)在蚀刻气体中使用蚀刻剂和硅源。在另一种实施方式中,在用于从内表面去除沉积物或污染物的室清洁步骤中,将处理室暴露于蚀刻气体。在另一种实施方式中,在室清洁工艺中,通过将处理室的内表面暴露于蚀刻气体来清洁处理室,以去除颗粒和其它污染物。慢蚀刻工艺(预清洁和平滑)
可以进行慢蚀刻工艺(例如,<100/min)以从衬底表面去除污染物和消除表面不规则性(例如粗糙度)。在一个方面,可以蚀刻衬底表面以暴露不含或基本不含污染物的下层。在另一个方面,可以再分布衬底表面的材料,以最小化或消除导致表面不规则的峰和谷。在慢蚀刻工艺期间,将衬底暴露于包含蚀刻剂、硅源和可选的载气的蚀刻气体。通过操纵蚀刻剂与硅源的相对流率、使用特定的蚀刻剂源和硅源以及通过调节温度及压力,可以部分地控制总反应。
可将衬底暴露于预处理工艺,以制备用于后续蚀刻工艺的衬底表面。预处理工艺可以包括湿法清洁工艺,例如最后HF工艺、等离子体清洁、酸洗涤工艺或其组合。在一个实施例中,通过将表面持续暴露于氢氟酸溶液(例如,约0.5wt%的HF水溶液)约2分钟,用最后HF湿清洁工艺处理衬底。
图1示出了从图2A所示的衬底200去除污染物212和粗糙区域218的工艺100的流程图。衬底200包括含硅层205和表面210。表面210上或其中包含污染物212和粗糙区域218。粗糙区域218可由表面210内的峰216和谷214形成。在慢蚀刻工艺中,可将预定厚度的材料220从含硅层205去除,以露出暴露表面230(图2B)。然后,在可选的沉积工艺中,可在暴露表面230上形成层240(图2C)。在一个实施例中,层240包含由外延沉积工艺沉积的含硅材料。
本发明的实施方式提供了在各种衬底表面和衬底(例如衬底200和400以及层205和405(图2A-2C和4A-4C)上蚀刻和沉积含硅材料的工艺。本文所用的“衬底”或“衬底表面”是指任何衬底或在进行膜处理的衬底上形成的材料表面。例如,可对其进行处理的衬底表面例如包括以下材料:硅、含硅材料、氧化硅、应变硅、绝缘体上硅(S0I)、掺氟硅酸盐玻璃(FSG)、掺碳氧化硅、氮化硅、掺杂硅、硅锗、硅锗碳、锗、硅碳、砷化镓、玻璃、蓝宝石或取决于应用的其它材料。衬底表面还可包括电介质材料,例如二氧化硅、氮化硅、氧氮化硅和/或掺碳氧化硅。衬底可以具有各种尺寸,例如200mm或300mm直径晶片以及长方形或正方形的晶片。本文所述的工艺的实施方式可以在许多衬底和表面尤其是硅和含硅材料上蚀刻和沉积。可以使用本发明的实施方式的衬底包括但不限于半导体晶片,例如晶体硅(例如,Si<100>或Si<111>)、氧化硅、应变硅、硅锗、掺杂或未掺杂的多晶硅、掺杂或未掺杂的硅晶片、氮化砖以及图案化或未图案化的晶片。
在本申请中,术语“含硅”材料、化合物、膜或层应被解释为包括至少包含硅的组合物并且可以包含锗、碳、硼、砷、磷、镓和/或铝。其它元素(例如,金属、卤素或氢)通常以百万分率(ppm)左右的浓度加入含硅材料、化合物、膜或层中。含硅材料的化合物或合金可由缩写表示,例如Si表示硅、SiGe表示硅锗、SiC表示硅碳以及SiGeC表示硅锗碳。这些缩写既不代表具有化学计量关系的化学式,也不表示含硅材料的任何特定的还原/氧化态。含硅材料、化合物、膜或层可以包括衬底或衬底表面。
表面210上的污染物212包括有机残余物、碳、氧化物、氮化物、卤化物(例如,氟化物或氯化物)或其组合。例如,表面210在暴露于环境空气之后可以包含一层氧化硅,或者在用最后HF湿法清洁工艺处理之后可以包含一层氟化硅。表面210还可包含不规则或粗糙区域,例如粗糙区域218内的谷214和峰216。
可将衬底200定位在处理室内并加热至预定温度(步骤110)。可将衬底和处理室完全或其一部分加热至约300-800℃的温度,优选约500-700℃,更优选约550-650℃。可将处理室保持在约1mTorr-约760Tor的压力,优选约0.1-500Torr,更优选约1-100Torr。
在一种实施方式中,使用冷壁反应器作为在较低温度下进行的工艺的处理室。冷壁反应器可以对反应器内的每个独立部分提供温度控制,例如反应器壁、反应器顶盖和衬底基座。通常,反应器顶盖可由石英形成。在一个实施例中,冷壁反应器可将反应器壁保持在小于约400℃的温度、优选小于约200℃、更优选小于约150℃,将反应器顶盖保持在约300-800℃的温度、优选约400-700℃、更优选约500-600℃,并将衬底基座保持在约300-800℃的温度、优选约500-700℃、更优选约550-650℃。
在慢蚀刻工艺使用的蚀刻气体(步骤120)包含蚀刻剂、硅源和可选的载气。可将蚀刻剂、硅源和载气预混合并共同流入或独立流入处理室。在一个方面,蚀刻剂和载气要么共同流动要么作为气体混合物合并在一起,硅源和载气要么共同流动要么作为气体混合物合并在一起,并且这两种气体混合物可以在进入处理室之前一起共同流动。例如,氯和氮的气体混合物可以与硅烷和氮的混合物共同流入处理室。在另一个实施例中,氯和氮的气体混合物可以与硅烷和氢的混合物共同流入处理室。
优选地,蚀刻剂是氯气(Cl2)。在一个实施例中,已发现,作为含硅材料的蚀刻剂,氯气在低于使用更常见的蚀刻剂(例如氯化氢)的工艺的温度下的效果出乎意料的好。因此,采用氯气的蚀刻工艺可以在更低的工艺温度下进行。可以与蚀刻剂同时提供硅源,从而抑制在衬底200上容易产生的过度蚀刻。硅源用于在含硅层上沉积硅,而蚀刻剂去除含硅材料。调节蚀刻剂和硅源暴露于衬底的速率,以使总反应有利于材料去除和/或材料再分布。因此,总反应去除或再分布含硅材料,并且可将蚀刻速率精确控制在数埃每分钟。
向处理室中添加蚀刻剂的速率通常为约1标准立方厘米每分钟(sccm)-约1标准升每分钟(slm),优选约5-150sccm,更优选约10-30sccm,例如约20sccm。尽管氯是优选的蚀刻剂,但可以单独或组合使用的其它蚀刻剂包括三氟化氯(ClF3)、四氯硅烷(SiCl4)或其衍生物。
向慢蚀刻工艺的处理室中提供的硅源的速率通常为约5-500sccm,优选约10-100sccm,更优选约20-80sccm,例如约50sccm。可用于蚀刻的硅源包括硅烷、卤化硅烷、有机硅烷或其衍生物。硅烷包括硅烷(SiH4)和具有经验式SixH(2x+2)的更高级硅烷,例如二硅烷(Si2H6)、三硅烷(Si3H8)和四硅烷(Si4H10)以及其它。卤化硅烷包括具有经验式X’ySixH(2x+2-y)的化合物,其中X’独立地选自F、Cl、Br或I,例如六氯二硅烷(Si2Cl6)、四氯硅烷(SiCl4)、三氯硅烷(Cl3SiH)、二氯硅烷(Cl2SiH2)和氯硅烷(ClSiH3)。有机硅烷包括具有经验式RySixH(2x+2-y)的化合物,其中R独立地选自甲基、乙基、丙基或丁基,例如甲基硅烷((CH3)SiH3)、二甲基硅烷((CH3)2SiH2)、乙基硅烷((CH3CH2)SiH3)、甲基二硅烷((CH3)Si2H5)、二甲基二硅烷((CH3)2Si2H4)和六甲基二硅烷((CH3)6Si2)。优选的硅源可以包括硅烷、二氯硅烷或二硅烷。
向处理室中提供的载气的流率通常为约1-100slm,优选约5-80slm,更优选约10-40slm,例如约20slm。载气可以包括氮(N2)、氢(H2)、氩、氦或其组合。在一种实施方式中,惰性载气是优选的,并包括氮、氩、氦或其组合。可以基于所用的前驱体和/或步骤120的慢蚀刻工艺的工艺温度来选择载气。
优选地,在特征为低温(例如,<800℃)工艺的实施方式中使用氮作为载气。低温工艺容易受到影响,部分原因是在蚀刻工艺中使用氯气。氮在低温蚀刻工艺中保持惰性。因此,氮在低温工艺期间并不结合到衬底上的含硅材料中。而且,氮载气不像氢载气那样形成氢末端表面。通过在衬底表面上吸附氢载气而形成的氢末端表面抑制后续沉积的含硅层的生长速率。最后,低温工艺可以利用氮作为载气的经济性,因为氮的成本远低于氢、氩或氦。在蚀刻气体的一个实施例中,氯是蚀刻剂,硅烷是硅源,氮是载气。
可将衬底200和表面210暴露于慢蚀刻气体,以在步骤120中去除预定厚度220的含硅材料205(图2A-2B)。在去除预定厚度220期间蚀刻表面210。将慢蚀刻气体暴露于衬底200约5秒-约5分钟的时间,优选约30秒-约2分钟。相对于具体工艺中所用的蚀刻速率来调节时间长度。慢蚀刻工艺的蚀刻速率通常小于约100/min,优选小于约50/min。在一种实施方式中,慢蚀刻速率为约2-20/min,优选约5-15/min,例如约10/min。在另一种实施方式中,蚀刻速率为约2/min或更小,优选约1/min或更小,最优选地,接近材料在衬底上再分布,以使净去除速率相对于层的厚度不可测量。随着蚀刻工艺减慢至再分布反应,可将含硅层205的材料从峰216去除并添加至表面210内的谷214中,以形成暴露表面230。谷214可用从峰216得到的材料和/或通过在慢蚀刻气体中引入前驱体(例如,硅源)所生成的纯净材料来填充。
可以采用慢蚀刻工艺来减小衬底200上的表面粗糙度。在一个实施例中,可将表面粗糙度为约6nm均方根(RMS)或更大的表面210暴露于慢蚀刻气体,以从含硅层205去除预定厚度220的材料而露出暴露表面230。暴露表面230的表面粗糙度可为约1nmRMS或更小,优选约0.1nmRMS或更小,更优选约0.07nmRMS。在工艺100期间将先前位于衬底上或其中的污染物212和粗糙区域218去除。暴露表面230通常不含或基本不含污染物,所述污染物包括有机残余物、碳、氧化物、氮化物、卤化物(例如,氟化物或氯化物)或其组合。
可以在步骤125中(图1)在处理室内进行可选的净化工艺。净化工艺有利于从衬底200去除残余的蚀刻气体,进而强化后续沉积工艺(步骤130)中的生长。在低压净化工艺期间,处理室的内部压力可为约0.1mTorr-约100Torr,优选约1.0mTorr-约10Torr,更优选约10.0mTorr-约1Torr。净化工艺的进行时间可为约30秒-约10分钟,优选约1-5分钟,更优选约2-4分钟。通常,可以关闭进入处理室的所有气体。然而,在一个替代性方面,净化气体可以在净化工艺中的任何时间提供。净化气体可以包括氮、氢、氩、氦、合成气体或其组合。
层240可以在步骤130中沉积在暴露表面230上。优选地,层240是可以通过化学气相沉积(CVD)工艺选择性地且外延地生长或沉积在暴露表面230上的含硅材料。本文所述的化学气相沉积工艺包括许多技术,例如原子层外延生长(ALE)、原子层沉积(ALD)、等离子体辅助CVD(PA-CVD)或等离子体增强CVD(PE-CVD)、等离子体辅助ALD(PA-ALD)或等离子体增强ALD(PE-ALD)、原子层CVD(ALCVD)、有机金属或金属有机CVD(MOCVD或OMCVD)、激光辅助CVD(LA-CVD)、紫外线CVD(UV-CVD)、热线CVD(HWCVD)、减压CVD(RP-CVD)、超高真空CVD(UHV-CVD)、其衍生物或其组合。在一个实施例中,优选的工艺利用热CVD在暴露表面230上外延生长或沉积作为层240的含硅化合物。步骤130中使用的沉积气体也可包含至少一种第二元素源,例如锗源和/或碳源。锗源可以与硅源、蚀刻剂和载气一起添加至处理室,以形成含硅化合物。因此,含硅化合物可以包含硅、SiGe、SiC、SiGeC、其掺杂物或其组合。通过在沉积工艺中引入锗源(例如,锗烷)或碳源(例如,甲基硅烷),可以将锗和/或碳添加至含硅材料。通过在沉积工艺期间或之后引入硼源(例如,二硼烷)、砷源(例如,胂)或磷源(例如,磷化氢),含硅材料化合物还可以包含掺杂物。掺杂物可以包含在硅源、蚀刻剂和载气中,以形成含硅化合物。或者,通过将衬底暴露于离子注入工艺,可以将掺杂物添加至含砖材料。
在另一个实施例中,可以使用被称为交替气体供给(AGS)的CVD工艺在暴露表面230上外延生长或沉积作为层240的含硅化合物。AGS沉积工艺包括将硅源和蚀刻剂交替暴露于衬底表面的循环。AGS沉积工艺进一步公开在共同转让和共同待审的USNo.11/001774中,该申请于2004年12月1日提交,名称为“SelectiveEpitaxyProcesswithAlternatingGasSupply”,出于描述AGS工艺的目的,通过引用将其全文结合于此。
可以使用工艺100在相同的处理室中蚀刻和沉积含硅材料。优选地,为了提高处理量、提高效率、降低污染的可能性以及有利于工艺配合(例如,共用化学前驱体),慢蚀刻工艺(步骤120)和后续沉积工艺(步骤130)在相同的处理室中进行。在一个方面,慢蚀刻工艺和沉积工艺均采用相同的硅源、相同的蚀刻剂和相同的载气。例如,慢蚀刻工艺的蚀刻气体可以包含硅烷、氯和氮,而选择性外延沉积工艺的沉积气体也可包含硅烷、氯和氮。在整个工艺期间,可以调节硅源与还原剂的浓度比来促进具体步骤。在一个实施例中,提高硅源与还原剂的浓度比以促进沉积步骤。在另一个实施例中,降低硅源与还原剂的浓度比以促进蚀刻步骤。
快蚀刻工艺
在另一种实施方式中,可以使用快蚀刻工艺(例如,>100/min)从衬底表面选择性地去除含硅材料。快蚀刻工艺是去除含硅材料而不损坏阻挡材料的选择性蚀刻工艺。阻挡材料可以包括用作间隔片、覆盖层和掩膜材料的氮化硅、氧化硅和氧氮化硅。
图3示出了工艺300的流程图,该工艺始于在步骤310中将衬底定位在处理室中并调节工艺参数。可将衬底和处理室完全或其一部分加热至约400-800℃的温度,优选约500-700℃,更优选约550-650℃。将处理室的压力保持在约1mTorr-760Torr,优选约0.1-500Torr,更优选约1-100Torr。
快蚀刻工艺中所用的蚀刻气体包含蚀刻剂、载气和可选的硅源(步骤320)。在一个实施例中,蚀刻气体包含氯、氮和硅烷。向处理室中提供蚀刻剂的速率可为约1-100sccm,优选约5-50sccm,更优选约10-30sccm,例如约20sccm。尽管氯是快蚀刻工艺中的优选蚀刻剂,但可以单独或组合使用的其它蚀刻剂包括三氟化氯、四氯硅烷或其衍生物。
向处理室中提供载气的流率通常为约1-100slm,优选约5-80slm,更优选约10-40slm,例如约20slm。载气可以包括氮、氢、氩、氦或其组合。在一种实施方式中,惰性载气是优选的,并包括氮、氩、氦或其组合。可以基于所用的前驱体和/或步骤320的蚀刻工艺中工艺温度来选择载气。优选地,在特征为低温(例如,<800℃)工艺的实施方式中使用氮作为载气。在一个实施例中,第一蚀刻工艺的蚀刻气体包含氯和氮。
在某些实施方式中,可在蚀刻气体中可选地加入硅源,用于对快蚀刻工艺中的去除速率提供额外的控制。送入处理室的硅源的速率可为约5-500sccm,优选约10-100sccm,更优选约20-80sccm,例如约50sccm。蚀刻气体可以包含本文所述的硅源,例如硅烷、卤化硅烷、有机硅烷或其衍生物。
衬底400包含至少一个膜叠层特征(filmstackfeature)410(图4A)。含硅层405可以是掺杂或未掺杂的裸硅衬底或包括位于其上的含硅层。膜叠层特征410包括被间隔片416和保护性覆盖层418包围的栅极氧化物层414上的栅极层412。通常,栅极层412由多晶硅构成,并且栅极氧化物层414由二氧化硅、氧氮化硅和氧化铪构成。部分围绕栅极氧化物层414的是间隔片416,间隔片416通常为包含氧化硅、氮化硅、氧氮化硅、其衍生物或其组合的绝缘材料。在一个实施例中,间隔片416为氮化物/氧化物叠层(例如,Si3N4/SiO2/Si3N4)。可选地,栅极层412可以具有粘附于其上的保护性覆盖层418。
在步骤320中,将衬底400暴露于蚀刻气体,以去除预定厚度425的含硅层405并形成凹槽430,如图4B所示。蚀刻气体暴露于衬底400的时间为约10秒-约5分钟,优选约1-3分钟。相对于具体工艺中所用的蚀刻速率来调节时间长度。快蚀刻工艺的蚀刻速率通常大于约100/min,优选大于约200/min,例如约200-1500/min,优选约200-1000/min,例如约600/min。
在一个实施例中,蚀刻工艺可以保持快速率以去除预定厚度425,然后降至慢速率工艺以平滑剩余的表面。可以通过工艺100所描述的慢蚀刻工艺来控制降低的蚀刻速率。
可以在步骤325中在处理室内进行可选的净化工艺。净化步骤有利于从衬底400去除残余的蚀刻气体,进而强化后续沉积工艺(步骤330)中的生长。在低压净化工艺期间,处理室的内部压力可为约0.1mTorr-约100Torr,优选约1.0mTorr-约10Torr,更优选约10.0mTorr-约1Torr。净化工艺的进行时间可为约30秒-约10分钟,优选约1-5分钟,更优选约2-4分钟。通常,可以关闭进入处理室的所用气体。然而,在一个替代性方面,净化气体可以在净化工艺中的任何时间提供。
一旦预定厚度425的衬底400被去除,则可以在步骤330中沉积层440(图4C)。优选地,层440是可以通过CVD工艺选择性地和外延地沉积在凹槽430的暴露表面上的含硅材料。在一个实施例中,CVD工艺包括AGS沉积技术。或者,可在沉积层440之前将凹槽430暴露于另一个制造工艺,例如掺杂工艺。掺杂工艺的一个实例包括离子注入,其中掺杂物(例如,硼、磷和砷)可被注入凹槽430的表面。
以使用工艺300在相同的处理室中蚀刻和沉积含硅材料。优选地,为了提高吞吐量、提高效率、降低污染的可能性以及有利于工艺整合(例如,共用化学前驱体),快蚀刻工艺和后续沉积工艺在相同的处理室中进行。在一个实施例中,含硅化合物的快蚀刻工艺和选择性外延沉积工艺均使用氯作为蚀刻剂并用氮作为载气。
图5示出了本发明的另一种实施方式,在工艺500中,包括在完成制造技术之后清洁处理室。可将衬底暴露于预处理工艺,该预处理工艺包括湿法清洁工艺、最后HF工艺、等离子体清洁、酸洗涤工艺或其组合(步骤510)。在预处理工艺之后并且在本文所述的蚀刻工艺开始之前,衬底不得不在处理室的受控环境外部停留被称为排队时间(Q时间)的一段时间。在周围环境中,Q时间可以持续约2小时或更长,通常,Q时间持续更长,例如约6-24小时或更长(如约36小时)的预定时间。在Q时间期间,由于衬底暴露于环境中的水和氧,常常在衬底表面上形成氧化硅层。
在步骤520,将衬底定位在处理室中,并暴露于本文所述的蚀刻工艺。蚀刻工艺可以是在步骤120中所述的慢蚀刻工艺、在步骤320中所述的快蚀刻工艺或两者。蚀刻工艺从衬底去除预定厚度的含硅层,以形成暴露含硅层。然后,在处理室中进行可选的净化工艺(步骤525)。然后,将第二材料沉积在暴露含硅层上(步骤530)。通常,第二材料在选择性外延沉积的含硅化合物中。沉积工艺可以包括在步骤130和330中描述的工艺。在一种实施方式中,在步骤520和530中可以使用工艺100和300。
在处理室内部进行室清洁工艺以去除其中的各种污染物(步骤540)。蚀刻工艺和沉积工艺可以在处理室内的表面上形成沉积物或污染物。通常,沉积物包括粘附在处理室的壁面和其它内表面上的含硅材料。因此,可以使用室清洁工艺以去除污染物,而不损坏处理室的内表面。
在工艺500的实施例中,首先将衬底暴露于最后HF工艺。将衬底置于处理室中,并暴露于约600℃的包含氯和氮的蚀刻工艺。然后,将处理室暴露于净化工艺。随后,在相同的处理室中,通过使用约625℃的氯和氮的沉积工艺,将含硅层外延沉积在衬底上。然后,移出衬底,并将处理室加热至约675℃,并暴露于包含氯和氮的清洁气体。优选地,蚀刻剂和载气与步骤520和540中所用的气体相同。
室清洁工艺
在另一种实施方式中,可以在室清洁工艺(例如,步骤540)中使用包含硅源的室清洁气体从处理室内部去除各种污染物。处理室的内表面通常包含会在传统蚀刻剂清洁工艺中被损坏的含硅材料(例如,石英)。因此,除了蚀刻剂和载气之外,室清洁气体还可包含硅源,以抑制由蚀刻剂导致的过度蚀刻。
处理室可包含内表面或具有易受蚀刻剂化学损害的表面的部件。而且,处理室中的内表面或部件可具有易受蚀刻剂损害的保护性涂层。通常,处理室中的内表面可包含含硅表面,例如石英、氧化硅,碳化硅、碳化硅涂覆的石墨、蓝宝石、硅化物涂层、其衍生物或其组合。在其它实施例中,内表面是处理室内的含金属表面,例如钢、不锈钢、铁、镍、铬、铝、其合金或其组合。内表面可以存在于处理室的内部壁面、底面和室的盖及其内部部件或部分,例如基座、里衬、上顶盖、下顶盖、预热环、喷淋头、分布板、探针等。
清洁工艺包括将衬底基座加热至约600-1200℃、优选约650-1000℃、更优选约799-900℃、例如约800℃的温度。处理室的内部压力可为约1mTorr-760Torr,优选约100mTorr-约750Torr,更优选约100-700Torr,例如600Torr。在一个实施例中,使用冷壁反应器作为处理室,并将反应器壁保持在小于约400℃、优选小于约200℃、更优选小于约150℃的温度,并将石英反应器顶盖保持在约300-800℃、优选约400-700℃、更优选为500-600℃的温度。
进行清洁工艺的时间为约30秒-约10分钟,优选约1-5分钟,更优选约2-4分钟。室清洁气体可以包含蚀刻剂、硅源和载气。优选地,室清洁工艺中所用的蚀刻剂、硅源和载气与前面制造步骤(例如,慢蚀刻工艺或快蚀刻工艺)中所用的气体相同。在室清洁工艺中,向处理室中提供的蚀刻剂的速率可为约10sccm-约100slm,优选约100sccm-约5slm。在一个实施例中,蚀刻剂的流率为约5slm,优选约10slm,更优选约20slm。在另一个实施例中,蚀刻剂的流率为约50sccm,优选约130sccm,更优选约1000sccm。可用在清洁气体中的蚀刻剂包括氯、三氟化氯、四氯硅烷、六氯二硅烷或其组合。
在室清洁工艺中,向处理室中提供的硅源的速率通常为约10sccm-约100slm,优选约100sccm-约5slm。在一个实施例中,硅源的流率为约5slm,优选约10slm,更优选约20slm。在另一个实施例中,硅源的流率为约50sccm,优选约130sccm,更优选约1000sccm。可用于蚀刻的硅源包括硅烷、卤化硅烷、有机硅烷或其衍生物。硅烷包括硅烷(SiH4)和具有经验式SixH(2x+2)的更高级硅烷,例如二硅烷(Si2H6)、三硅烷(Si3H8)和四硅烷(Si4H10)以及其它。卤化硅烷包括具有经验式X’ySixH(2x+2-y)的化合物,其中X’独立地选自F、Cl、Br或I,例如六氯二硅烷(Si2Cl6)、四氯硅烷(SiCl4)、三氯硅烷(Cl3SiH)、二氯硅烷(Cl2SiH2)和氯砖烷(ClSiH3)。有机硅烷包括具有经验式RySixH(2x+2-y)的化合物,其中R独立地选自甲基、乙基、丙基或丁基,例如甲基硅烷((CH3)SiH3)、二甲基硅烷((CH3)2SiH2)、乙基硅烷((CH3CH2)SiH3)、甲基二硅烷((CH3)Si2H5)、二甲基二硅烷((CH3)2Si2H4)和六甲基二硅烷((CH3)6Si2)。优选的硅源可以包括硅烷、二氯硅烷或二硅烷。
在室清洁工艺中,向处理室提供的载气的流率可为约100sccm-约100slm。在一个实施例中,载气的流率为约20slm,优选约50slm,更优选约100slm。在另一个实施例中,载气的流率为约100sccm,优选约1slm,更优选约10slm。载气可以包括氮、氢、合成气体、氩、氦或其组合。在一个优选实施例中,室清洁气体包含氯气、硅烷和载气(例如,氮)。可用于本文所述的本发明的实施方式的室清洁工艺进一步公开在共同转让的美国专利No.6042654中,通过引用将其整体结合于此。室清洁工艺可以在处理完每个单独的衬底之后或处理完多个衬底之后重复进行。在一个实施例中,室清洁工艺在每处理25个衬底之后进行。在另一个实施例中,室清洁工艺在每处理5个衬底之后进行。在另一个实施例中,室清洁工艺在每处理100个衬底之后进行。尽管衬底在室清洁工艺中可以保留在处理室中,但优选将衬底移出,并且所述工艺对空处理室进行。
这里描述的实施方式所提供的工艺可以用于:金属氧化物半导体场效应晶体管(MOSFET)和双极晶体管的制造工艺,例如Bipolar器件制造(例如,基极、发射极、集电极和发射极触点)、BiCMOS器件制造(例如,基极、发射极、集电极和发射极触点)和CMOS器件制造(例如,沟道、源极/漏极、源极/漏极扩展、抬高的源极/漏极、衬底、应变硅、绝缘体上硅和触点插塞)。其它实施方式提供的工艺可用于栅极制造工艺、基极触点制造工艺、集电极触点制造工艺、发射极触点制造工艺或抬高的源极/漏极制造工艺。
本发明的工艺可以在用于ALE、CVD和ALD工艺的制造设备上进行。可用于如本文所述蚀刻或沉积含硅膜的系统包括EpiCentura系统或PolyGen系统,两者均可从美国加州SantaClara的应用材料公司获得。可用于如本文所述蚀刻和沉积的处理室进一步公开在共同转让的美国专利No.6562720中,为了描述装置的目的,通过引用将其整体结合于此。其它可用装置包括批处理炉和高温炉。
实施例
在可从美国加州SantaClara的应用材料公司获得的EpiCentura系统中,对300mm的硅晶片进行以下理想实施例。
实施例1:不含硅烷的对比预清洁工艺
将衬底暴露于最后HF工艺,以形成氟化物末端表面。将衬底置于处理室中,并加热至约600℃,同时将压力保持在约20Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2和流率为约120sccm的Cl2。以约500/min的速率蚀刻表面。
实施例2:含有硅烷的预清洁工艺
将衬底暴露于最后HF工艺,以形成氟化物末端表面。将衬底置于处理室中,并加热至约600℃,同时将压力保持在约20Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2、流率为约20sccm的Cl2和流率为约50sccm的SiH4。以约10/min的速率蚀刻表面。因此,例如实施例2中的硅烷的硅源的添加使含硅层的蚀刻速率与实施例1中的蚀刻速率相比降低了约50倍。
实施例3:不含硅烷的对比平滑工艺
将包含含硅层的衬底表面解理形成粗糙度为约5.5nmRMS的表面。将衬底置于处理室中,并加热至约650℃,同时将压力保持在约20Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2和流率为约20sccm的Cl2。以约200/min的速率蚀刻表面。
实施例4:含有硅烷的平滑工艺
将包含含硅层的衬底表面解理形成粗糙度为约5.5nmRMS的表面。将衬底置于处理室中,并加热至约650℃,同时将压力保持在约20Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2、流率为约20sccm的Cl2和流率为约50sccm的SiH4。以约20/min的速率蚀刻表面。表面粗糙度降至约0.1nmRMS。因此,例如实施例4中的硅烷的硅源的添加使含硅层的蚀刻速率与实施例3中的蚀刻速率相比降低了约10倍。
实施例5:氯蚀刻工艺及其后的硅外延生长
硅衬底包含一系列氮化硅里衬特征,这些里衬特征高度约90nm、宽度约100nm且相距约150nm,裸露硅表面。将衬底置于处理室中,并加热至约600℃,同时将压力保持在约40Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2和流率为约80sccm的Cl2。以约750/min的速率蚀刻表面。约30秒后,蚀刻了约35nm的硅表面。氮化硅特征对蚀刻工艺保持惰性。将压力升至约200Torr,并以约50sccm的流率向蚀刻气体添加SiH4。将蚀刻速率降至约18/min以平滑刚刚蚀刻的硅表面。约1分钟后,通过将SiH4的流率升至约100sccm并保持N2和Cl2的流率不变,将光滑表面暴露于选择性外延沉积工艺。以约25/min的速率将含硅材料沉积在硅表面上。
实施例6:含有硅烷的快速氯蚀刻工艺
硅衬底包含一系列氮化硅里衬特征,这些里衬特征高度约90nm、宽度约100nm且相距约150nm,裸露硅表面。将衬底置于处理室中,并加热至约600℃,同时将压力保持在约40Torr。将衬底暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2、流率为约80sccm的Cl2和流率为约40sccm的SiH4。以约400/min的速率蚀刻表面。
实施例7:含有氯和硅烷的室清洁工艺
在硅外延沉积工艺之后,将衬底从处理室移出。将处理室加热至约800℃,同时将压力调节至约600Torr。将处理室暴露于蚀刻气体,该蚀刻气体包含流率为约20slm的N2、流率为约2slm的Cl2和流率为约1slm的SiH4。室清洁工艺进行约2分钟。
虽然上述针对本发明的实施方式,但是在不脱离本发明的基本范围的前提下,可以设计本发明的其它和进一步的实施方式,而且本发明的范围由权利要求确定。
Claims (20)
1.一种在衬底表面上蚀刻含硅材料的方法,包括:
将包括含有污染物的含硅材料的衬底定位在处理室中;
将所述含硅材料暴露于由氯气、硅源和载气组成的蚀刻气体;和
去除所述污染物和预定厚度的所述含硅材料,其中将所述处理室保持在550℃至650℃的温度下。
2.如权利要求l的方法,其中,所述含硅材料以的速率被去除。
3.如权利要求2的方法,其中,所述载气选自由下述所组成的组:氮、氩、氦及其组合。
4.如权利要求3的方法,其中,所述硅源选自由下述所组成的组:硅烷、二硅烷、二氯硅烷、四氯硅烷、六氯二硅烷、其衍生物及其组合。
5.如权利要求4的方法,其中,所述载气为氮,并且所述硅源为硅烷。
6.如权利要求2的方法,其中,在去除所述污染物和所述预定厚度的所述含硅材料之后,在所述处理室中进行外延沉积工艺以沉积外延层。
7.如权利要求6的方法,其中,所述污染物选自由下述所组成的组:氧化物、氟化物、氯化物、氮化物、有机残余物、碳、其衍生物及其组合。
8.如权利要求7的方法,其中,在定位在所述处理室中之前,将所述衬底暴露于湿法清洁工艺。
9.如权利要求8的方法,其中,在所述湿法清洁工艺之后和定位在所述处理室中之前,将所述衬底暴露于环境条件6-24小时的时间,所述条件包含大气压和室温下的氧和水。
10.如权利要求7的方法,其中,所述含硅材料还包括在去除所述污染物和所述预定厚度的所述含硅材料中被去除的粗糙表面。
11.如权利要求l的方法,其中,所述衬底包含含硅材料,在被定位于所述处理室之前,所述含硅材料的第一表面粗糙度为约1nm均方根或更大。
12.如权利要求1的方法,其中,在从所述衬底表面去除所述污染物和预定厚度的所述含硅材料后,所述含硅材料的表面粗糙度小于约1nm均方根。
13.如权利要求1的方法,其中,所述含硅材料是含硅单晶材料。
14.如权利要求1的方法,其中,将所述处理室保持在10-750Torr的压力下。
15.如权利要求6的方法,其中,所述外延层包括选自由下述所组成的组:硅、硅锗、硅碳、硅锗碳、其衍生物及其组合的材料。
16.如权利要求1的方法,其中,所述预定厚度的所述含硅材料的去除在所述衬底的源极/漏极区域内形成凹槽。
17.如权利要求16的方法,其中,所述源极/漏极区域用在选自CMOS、Bipolar或BiCMOS应用的器件中。
18.如权利要求1的方法,还包括:
在将所述衬底定位于所述处理室之前,将所述衬底暴露于最后HF湿清洁工艺。
19.如权利要求6的方法,其中,所述外延层通过包含所述氯气的沉积气体来沉积。
20.如权利要求1的方法,其中,去除所述污染物和所述预定厚度的所述含硅材料还包括:
在所述衬底上的源极和漏极区域中形成凹槽。
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US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
US7235492B2 (en) * | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
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-
2005
- 2005-01-31 US US11/047,323 patent/US7235492B2/en not_active Expired - Fee Related
- 2005-10-03 US US11/242,613 patent/US8093154B2/en not_active Expired - Fee Related
-
2006
- 2006-01-27 EP EP08169059A patent/EP2023376A3/en not_active Withdrawn
- 2006-01-27 CN CN200680010817.0A patent/CN101155648B/zh not_active Expired - Fee Related
- 2006-01-27 JP JP2007553243A patent/JP5329094B2/ja active Active
- 2006-01-27 EP EP08169060A patent/EP2023377A3/en not_active Withdrawn
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2007
- 2007-05-23 US US11/752,477 patent/US20070224830A1/en not_active Abandoned
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2011
- 2011-11-28 US US13/305,235 patent/US8492284B2/en active Active
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2012
- 2012-01-09 US US13/346,503 patent/US8445389B2/en active Active
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US8445389B2 (en) | 2013-05-21 |
EP2023377A2 (en) | 2009-02-11 |
JP5329094B2 (ja) | 2013-10-30 |
EP2023376A2 (en) | 2009-02-11 |
US20070224830A1 (en) | 2007-09-27 |
US20060169669A1 (en) | 2006-08-03 |
US8093154B2 (en) | 2012-01-10 |
US20120070961A1 (en) | 2012-03-22 |
CN101155648A (zh) | 2008-04-02 |
US20060169668A1 (en) | 2006-08-03 |
US7235492B2 (en) | 2007-06-26 |
US20120108039A1 (en) | 2012-05-03 |
US8492284B2 (en) | 2013-07-23 |
EP2023376A3 (en) | 2010-03-17 |
EP2023377A3 (en) | 2010-03-17 |
JP2008529306A (ja) | 2008-07-31 |
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