CN101046571B - Method for cutting substrate and substrate cutting apparatus using the same - Google Patents
Method for cutting substrate and substrate cutting apparatus using the same Download PDFInfo
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- CN101046571B CN101046571B CN2006101712070A CN200610171207A CN101046571B CN 101046571 B CN101046571 B CN 101046571B CN 2006101712070 A CN2006101712070 A CN 2006101712070A CN 200610171207 A CN200610171207 A CN 200610171207A CN 101046571 B CN101046571 B CN 101046571B
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- laser beam
- mother substrate
- substrate assembly
- dividing
- substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66D—CAPSTANS; WINCHES; TACKLES, e.g. PULLEY BLOCKS; HOISTS
- B66D1/00—Rope, cable, or chain winding mechanisms; Capstans
- B66D1/54—Safety gear
- B66D1/58—Safety gear responsive to excess of load
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66D—CAPSTANS; WINCHES; TACKLES, e.g. PULLEY BLOCKS; HOISTS
- B66D1/00—Rope, cable, or chain winding mechanisms; Capstans
- B66D1/28—Other constructional details
- B66D1/40—Control devices
- B66D1/48—Control devices automatic
- B66D1/485—Control devices automatic electrical
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66D—CAPSTANS; WINCHES; TACKLES, e.g. PULLEY BLOCKS; HOISTS
- B66D2700/00—Capstans, winches or hoists
- B66D2700/02—Hoists or accessories for hoists
- B66D2700/023—Hoists
- B66D2700/025—Hoists motor operated
Abstract
A substrate cutting method and a substrate cutting apparatus cut a substrate by simultaneously irradiating at least two laser beams having different wavelengths onto top and bottom surfaces of the substrate. The substrate cutting method includes preparing a mother substrate assembly having a thin film transistor (TFT) mother substrate and a color filter mother substrate, focusing at least two laser beams onto at least two different locations spaced apart from each other on a perpendicular relative to a surface of the mother substrate assembly simultaneously, and cutting the mother substrate assembly by the at least two different focused locations.
Description
Technical field
The present invention relates to a kind of method for dividing substrate and the substrate dividing apparatus that uses it, and more specifically relate to a kind of two laser beam of shining simultaneously and arrive the top surface of substrate and the method for dividing substrate of basal surface, and the laser cutting device that uses it with different wave length.
Background technology
LCD (LCD) is extensive use of.
LCD (LCD) comprises thin film transistor (TFT) (TFT) substrate with many grid lines and data line, be formed on the switchgear of grid line and data line intersection point and be connected to the pixel electrode of switchgear.This LCD also comprises the filter substrate that relatively is connected to the TFT substrate and has RGB color filter and public electrode.Liquid crystal layer is arranged between TFT substrate and the filter substrate.
The manufacturing of such LCD comprises substrate cut technology.Comprise the TFT mother substrate of a plurality of TFT substrates and comprise that the color filter mother substrate of a plurality of filter substrates is assembled to produce the mother substrate assembly, this mother substrate assembly is cut into liquid crystal cells.In conventional method for dividing substrate, use diamond wheel or CO
2The cutting method of laser beam is extensive use of.Yet in using the cutting method of diamond wheel, cutting technique may cause the damage of for example rupturing.In addition, may need extra technology for example to polish and cut the surface.In addition, when mother substrate assembly during by cross-cut, misalignment may take place.Using CO
2In the cutting method of laser beam, because the surface of mother substrate assembly is heated to high temperature, at the mother substrate assembly surface volume may takes place and stick up phenomenon, therefore prevent from the generation of vertical crack and make to be difficult to correctly cut the mother substrate assembly.
Therefore, need not the system and the cutting method of further technology after the needs cutting.
Summary of the invention
According to embodiments of the invention, method for dividing substrate comprises that preparation has the mother substrate assembly of thin film transistor (TFT) (TFT) mother substrate and color filter mother substrate; At least two laser beam are focused on simultaneously at least two diverse locations that on vertical line, are separated from each other with respect to the mother substrate assembly; With by these at least two different focal positions cutting mother substrate assemblies.
According to embodiments of the invention, substrate dividing apparatus comprises that the laser beam of at least two laser beam of generation produces body; The optically focused part of the laser beam that these at least two laser beam that gathering produces from laser beam generation body are a gathering; Focus on the condenser lens of the presumptive area of mother substrate assembly with the laser beam that will assemble.
Description of drawings
By preferred embodiments of the present invention will be described in detail with reference to the annexed drawings, it is more obvious that the present invention will become, in the accompanying drawings:
Fig. 1 illustrates the treatment step process flow diagram of making the method for liquid crystal display device according to embodiments of the invention;
Fig. 2 is the process flow diagram that is illustrated in the liquid crystal display technology shown in Figure 1 according to the cutting substrate method of the embodiment of the invention;
Fig. 3 is the synoptic diagram according to the substrate dividing apparatus of the embodiment of the invention;
Fig. 4 is the sectional view of condenser lens shown in Figure 3;
Fig. 5 A and 5B illustrate the treatment step of the method for using substrate dividing apparatus cutting substrate shown in Figure 3;
Fig. 6 is the sectional view that the line VI-VI ' along Fig. 5 A and 5B is got.
Embodiment
By reference back detailed description of the preferred embodiment and accompanying drawing, the present invention and realize that method of the present invention will be better understood.Yet the present invention may be embodied as many multi-form and should not be construed as the embodiment that is confined to provide herein.On the contrary, provide embodiment to make the disclosure, and will fully pass on notion of the present invention to those of ordinary skill in the art fully with complete.Similar in the whole text reference number is represented similar components.
Will be by describing the present invention more fully with reference to the accompanying drawing that shows one exemplary embodiment of the present invention.
To method that make LCD (LCD) according to the embodiment of the invention be described with reference to Fig. 1 and 2.
Fig. 1 illustrates the process flow diagram of making the method for LCD (LCD) according to the embodiment of the invention.
With reference to figure 1, the method for making LCD comprises thin film transistor (TFT) (TFT) technology S10, color filter (C/F) technology S20, liquid crystal cell process S30 and module process S40.
TFT technology S10 is included on the mother substrate and makes a plurality of thin film transistor base plates, and for example comprises and repeat film formation, evaporation, photoetching and etching.
C/F technology S20 is included on the mother substrate and makes a plurality of color filters, and can comprise and for example repeat film formation, evaporation, photoetching and etching, as among the TFT technology S10.Inspection process and cleaning procedure that TFT technology S10 and C/F technology S20 can also be included in before film formation, evaporation, photoetching or the etch process/carry out afterwards.
Liquid crystal cell process S30 is included between thin film transistor (TFT) (TFT) mother substrate and the color filter mother substrate and injects liquid crystal, and can comprise assembling two mother substrates and cut products therefrom.
In assembling and cutting, TFT mother substrate and color filter mother substrate are assembled in the aligning surplus that allows, and the products therefrom of assembling is cut into liquid crystal cells.Can use at least two to have different wavelength of laser and carry out this cutting.
After this, will method for dividing substrate be described in more detail with reference to figure 2.
Fig. 2 is the process flow diagram that is illustrated in the liquid crystal cell process shown in Figure 1 according to the method for dividing substrate of the embodiment of the invention.
With reference to figure 2, this method for dividing substrate comprises a plurality of technologies, for example comprises making mother substrate assembly S31, focuses the laser beam into S32 and the mobile simultaneously focal position S33 of cutting mother substrate assembly on the mother substrate assembly.
Preferably, these operations are carried out successively.
As mentioned above, preparation mother substrate assembly S31 comprises the color filter mother substrate that assembling is formed with the TFT mother substrate of a plurality of TFT substrates and is formed with a plurality of filter substrates on it on it, to produce the mother substrate assembly.The mother substrate assembly comprises a plurality of liquid crystal cells.Can on each liquid crystal cells, form the cutting that the predetermined aligned border is used for the mother substrate assembly.
Laser beam focuses on S32 on the mother substrate assembly, and wherein at least two laser beam focus on the two or more diverse locations that vertically separate of mother substrate assembly simultaneously.
The laser beam of using can be first and second laser beam with different wave length.This first and second laser beam focuses at least two diverse locations of mother substrate assembly respectively, and these at least two diverse locations are separated from each other on the vertical line of mother substrate assembly.
If first laser beam has the wavelength shorter than second laser beam, then first laser beam focuses on the top surface of mother substrate assembly, and second laser beam focuses on the basal surface of mother substrate assembly.Vertical the separating of focal position of the basal surface of mother substrate assembly and first laser beam.The refractive index of laser beam can change according to the wavelength of laser beam, thereby therefore the focal position of laser beam changes.Have in first laser beam under the situation of the wavelength shorter than second laser beam, first laser beam has bigger refractive index than second laser beam, and first laser beam is bigger than the second laser beam extent of refraction, thereby first laser beam focuses on the top surface of mother substrate assembly.
Thereby the focus that focuses on the laser beam on the mother substrate assembly moves cutting mother substrate assembly S33.Thereby substrate dividing apparatus moves the focus cutting mother substrate assembly of laser beam at both direction at least.By one or two and moving focal point in mobile laser beam and the mother substrate assembly.
The laser beam that focuses on by substrate dividing apparatus on two diverse locations of mother substrate assembly moves along the first direction that is basically parallel to mother substrate assembly one side from focus, i.e. vertically moving along the mother substrate assembly.Then, laser beam moves along the second direction that is basically parallel to mother substrate assembly opposite side from focus, and this opposite side is basically perpendicular to a described side of mother substrate, for example along horizontal.
As mentioned above, first and second laser beam with different wave length can be used as laser beam.First and second laser beam focus on the top surface and the basal surface of mother substrate assembly simultaneously, are used for cutting simultaneously the top surface and the basal surface of mother substrate assembly then.Though it is at first to cut in the focus that first direction moves laser beam by the method that illustrates that this one exemplary embodiment illustrates the mother substrate assembly, but the invention is not restricted to this, and can be applied at first to move laser beam foucing or to move the situation of laser beam foucing simultaneously in first and second directions in second direction.The mother substrate assembly can be cut into scheduled unit, for example liquid crystal cells.Can further carry out cutting technique to the mother substrate assembly that is cut into liquid crystal cells.Make the predetermined portions of filter substrate be cut to expose the presumptive area of TFT substrate thereby for example can carry out cutting technique to the mother substrate assembly, this is corresponding to for the presumptive area that exposes the TFT substrate with adhere to the cutting technique that the accessory module of gate drivers and data driver is for example carried out to liquid crystal cells.For this reason, as mentioned above, can use to have the different wavelength of laser bundle.In addition, the filter substrate cutting technique can carry out before the technology of cutting mother substrate assembly, promptly carried out after TFT mother substrate and color filter mother substrate are assembled each other.
To method for dividing substrate that use laser beam and the substrate dividing apparatus that uses this method for dividing substrate be described referring to figs. 3 to 6.The liquid crystal panel of making among the liquid crystal cell process S30 and other modules are assembled in module process S40, therefore finish LCD.
Though described the LCD manufacture method by the method for example, but the invention is not restricted to this, and should be understood that and it will be apparent to one skilled in the art that and to carry out many changes and improvements and non-essence breaks away from principle of the present invention to preferred embodiment described here.
After this, will substrate dividing apparatus and the method for dividing substrate that use above-mentioned laser beam be described in more detail referring to figs. 3 to 6.
Fig. 3 is the synoptic diagram according to the substrate dividing apparatus of the embodiment of the invention, and Fig. 4 is the sectional view of condenser lens shown in Figure 3.
With reference to figure 3, substrate dividing apparatus 300 comprises laser beam generation unit 310 and laser beam focusing unit 320.
Laser beam generation unit 310 comprises that first laser beam produces body 311 and second laser beam produces body 312.Laser beam focusing unit 320 can comprise optically focused part 321, catoptron 323 and 325, condenser lens 327 and focus adjustment unit 330.
First and second laser beam produce body 311 and 312 and produce first and second laser beam 251 and 252 with different wave length respectively.First and second laser beam 251 and 252 can be for example to have the short wavelength laser beam that shows good absorption for glass substrate.
Each first and second laser beam produces body 311 and 312 also can comprise light valve (shutter) (not shown) that is used to improve first and second laser beam 251 and 252 density or efficient, and the beam expander (not shown) that is used to expand the width of each first and second laser beam 251 and 252.
Laser beam focusing unit 320 comprises first and second catoptrons 323 and 325, optically focused part 321, condenser lens 327 and focus adjustment unit 330.Second catoptron 325 guides laser beam 250 towards condenser lens 327.Optically focused part 321 is gathered into a laser beam 250 with first and second laser beam 251 and 252.Condenser lens 327 focuses on the laser beam 250 of assembling on the machining cell.The focus that focus adjustment unit 330 is regulated condenser lens 327.
Optically focused part 321 produces body 311 and second laser beam generation body, 312 reception first laser beam 251 and second laser beam 252 from first laser beam respectively by first catoptron 323, and first and second laser beam 251 and 252 are gathered in the laser beam 250.
To condenser lens 327 be described with reference to figure 4.With reference to figure 4, condenser lens 327 has bossing.Condenser lens 327 focuses on first and second laser beam 251 and 252 same positions to machining cell with different wave length.Short wavelength's first laser beam 251 has big relatively refractive index relatively, and it passes condenser lens 327 and focuses on relatively near condenser lens 327, for example at the machining cell top surface.Contrast, because long wavelength's second laser beam 252 has relatively little refractive index relatively, it passes condenser lens 327 and focuses on far relatively from condenser lens 327, for example at the machining cell basal surface.First laser beam 251 and second laser beam 252 can focus on the same position of machining cell, promptly at the same position perpendicular to machining cell.Condenser lens 327 can be a plano-convex lens for example.Machining cell can be the mother substrate assembly.
With reference to figure 3, substrate dividing apparatus 300 can also comprise focus adjustment unit 330.This focus adjustment unit 330 uses predetermined control signal CONT to regulate the position of condenser lens 327, so controls the focus of first and second laser beam 251 and 252.Focus adjustment unit 330 can comprise sensor 332 and regulate part 331.
The focus of part 331 according to the control signal CONT up-down adjustment condenser lens 327 that provides from sensor 332 is provided.Therefore, in cutting technique, shine first and second laser beam 251 on the mother substrate assembly and 252 focus and can remain on same position about the mother substrate assembly.After this, will describe the method for dividing substrate that uses substrate dividing apparatus in detail with reference to figure 5A and 6.
Fig. 5 A and 5B illustrate the processing step of the method for using substrate dividing apparatus cutting substrate shown in Figure 3, and Fig. 6 is the sectional view that the line VI-VI ' along Fig. 5 A and 5B is got.
With reference to figure 5A, the method for dividing substrate of mother substrate assembly 100 carries out to mother substrate assembly 100 by focusing on the laser beam 250 that is produced by substrate dividing apparatus 300.
The laser beam 250 that provides from substrate dividing apparatus 300 focuses on the position on the mother substrate assembly 100, and mother substrate assembly 100 is cut when repeating to move processing bundle 250 preset distances.The laser beam 250 that focuses on the mother substrate assembly 100 moves at first direction, is for example vertically moving, and is basically parallel to first side of mother substrate assembly 100.Therefore, the mother substrate assembly is cut along first direction.
To describe first and second laser beam 250 that focus on the mother substrate assembly in detail with reference to figure 6.With reference to figure 6, the laser beam 250 that provides from mother substrate assembly 100 is to have different wavelength of laser bundle for example first and second laser beam 251 and 252 combination, and they focus on the top surface and basal surface of mother substrate assembly 100 simultaneously.First laser beam 251 has the wavelength than second laser beam, 252 weak points.Therefore, first laser beam 251 focuses on the top surface of mother substrate assembly 100, and second laser beam 252 with wavelength longer than first laser beam 251 focuses on the basal surface of mother substrate assembly 100.First laser beam 251 and second laser beam 252 can focus on the same position of the mother substrate assembly 100 on the vertical line that is positioned at mother substrate assembly 100.Point on point on the top surface of the mother substrate assembly 100 of first laser beam, 251 focusing place and the basal surface at the mother substrate assembly 100 of second laser beam, 252 focusing place is separated from each other on the vertical line of mother substrate assembly 100.
First and second laser beam 251 and 252 can for example be Nd:YAG laser beam or femtosecond laser beam.In addition, though by having two laser beam, the example that promptly focuses on first and second laser beam on the mother substrate assembly illustrates one exemplary embodiment of the present invention, but the invention is not restricted to this, and it will be obvious to those skilled in the art that a plurality of laser can focus on top surface and the basal surface and the inside of mother substrate assembly.
As mentioned above, mother substrate assembly 100 comprises the TFT mother substrate (not shown) with a plurality of TFT substrates and has the color filter mother substrate (not shown) of a plurality of filter substrates.Mother substrate assembly 100 can have the alignment mark that the mother substrate of assembling is cut into liquid crystal cells.
In the foregoing description, with reference to figure 5A and Fig. 6 mother substrate assembly 100 being shown is cut along first direction.In being described below, will be with reference to the method for figure 5B more detailed description along second direction cutting mother substrate assembly 100.
, cut the method for mother substrate assembly 100 along the second direction of mother substrate assembly 100 and also carry out to mother substrate assembly 100 from the laser beam 250 of substrate dividing apparatus 300 to Fig. 6 with reference to figure 5B by focusing on.
In the state of aiming at along the mother substrate assembly 100 of first direction cutting, mother substrate assembly 100 is cut along second direction.Substrate dividing apparatus 300 focuses on quilt laser beam 250 along the position on mother substrate assembly 100 top surfaces of second direction cutting, and laser beam 250 moved along the second direction that is basically parallel to mother substrate assembly 100 opposite sides, for example along mother substrate assembly 100 laterally.Therefore, mother substrate assembly 100 is cut along second direction.
Laser beam can be at least two laser beam with different wave length, first and second laser beam 251 and 252 for example, as shown in Figure 6.
As mentioned above, has following advantage at least according to method for dividing substrate of the present invention and equipment.Owing to use at least two laser beam from upper and lower surface while cutting substrate, can suppress chip or crackle with different wave length.
When using the cut substrate, do not need to carry out subsequent technique, therefore for example edge polishing, cleaning procedure etc. have reduced processing step and have improved manufacturing efficient.
In addition, owing to do not need substrate is carried out the physics cutting, so can reduce the damage of substrate, damaged substrate for example takes place.
It will be apparent to one skilled in the art that and to carry out many changes and improvements and non-essence breaks away from principle of the present invention to preferred embodiment.Therefore, the preferred embodiments of the present invention are to use on general and descriptive meaning, rather than the purpose in order to limit.
Claims (14)
1. method for dividing substrate comprises:
Preparation mother substrate assembly, it has thin film transistor (TFT) mother substrate and color filter mother substrate;
Focus at least two laser beam simultaneously at least two that are separated from each other different focal positions, described at least two different focal positions are positioned on the vertical line with respect to the surface of described mother substrate assembly; With
Cut described mother substrate assembly by described at least two different focal positions,
The top surface that the focusing of wherein said at least two laser beam is included in described mother substrate assembly focuses on first laser beam and focuses on second laser beam at the basal surface of described mother substrate assembly simultaneously, wherein said second laser beam has than the longer wavelength of described first laser beam, and the basal surface of described mother substrate assembly separates with the vertical line of described top surface about described mother substrate assembly.
2. method for dividing substrate according to claim 1, the cutting of wherein said mother substrate assembly comprises:
At the first party that is basically parallel to described mother substrate assembly first side described at least two the different focal positions that move up; With
Along the second party that is basically parallel to described mother substrate assembly second side described at least two focal positions that move up, this first side of described second side group perpendicular to described mother substrate assembly.
3. method for dividing substrate according to claim 2, the first direction that also is included in described mother substrate assembly repeats to move described at least two different focal positions with preset space length.
4. method for dividing substrate according to claim 2, the second direction that also is included in described mother substrate assembly repeats to move described at least two different focal positions with preset space length.
5. method for dividing substrate according to claim 1, wherein said first and second laser beam are Nd:YAG laser beam, described first laser beam has about 260 to the interior wavelength of about 270nm scope, and described second laser beam has about 350 to the interior wavelength of about 360nm scope.
6. method for dividing substrate according to claim 1, wherein said first and second laser beam are femtosecond laser beam, described first laser beam has the wavelength that arrives in about 450nm scope about 350, and described second laser beam has the wavelength that arrives in about 850nm scope about 750.
7. method for dividing substrate according to claim 1, the cutting of wherein said mother substrate assembly comprise described mother substrate assembly are cut into liquid crystal cells.
8. method for dividing substrate according to claim 1 comprises that also the filter substrate that cuts described mother substrate assembly is to expose the presumptive area of described thin film transistor base plate.
9. substrate dividing apparatus comprises:
Laser beam produces body, produces at least two laser beam;
The optically focused part, at least two laser beam gatherings that described laser beam produced the body generation are the laser beam of a gathering;
Condenser lens focuses on the laser beam of described gathering on the presumptive area of mother substrate assembly; And
The focus adjustment unit of regulating the focal position of described laser beam by the focus of regulating described condenser lens,
Wherein said focus adjustment unit comprises:
Sensor, reception is from described mother substrate assembly laser light reflected bundle and produce predetermined control signal; And
Regulate part, regulate the focal position of described laser beam by the described condenser lens of described relatively mother substrate assembly up-down adjustment, and
First and second laser beam that wherein said condenser lens will have a different wave length focus at least two positions that are separated from each other on the described mother substrate assembly vertical line.
10. substrate dividing apparatus according to claim 9, wherein said laser beam produce body and comprise:
First laser beam produces body, produces first laser beam; With
Second laser beam produces body, produces to have than described first laser beam long wavelength's second laser beam more.
11. substrate dividing apparatus according to claim 10, wherein said first and second laser beam are Nd:YAG laser beam, described first laser beam has about 260 to the interior wavelength of about 270nm scope, and described second laser beam has about 350 to the interior wavelength of about 360nm scope.
12. substrate dividing apparatus according to claim 10, wherein said first and second laser beam are femtosecond laser beam, described first laser beam has the wavelength that arrives in about 450nm scope about 350, and described second laser beam has the wavelength that arrives in about 850nm scope about 750.
13. substrate dividing apparatus according to claim 9, wherein said first laser beam has than the big refraction coefficient of described second laser beam, described first laser beam focuses on more approachingly described condenser lens than second laser beam, and described second laser beam focuses at the state that the focal position from described first laser beam separates preset distance.
14. substrate dividing apparatus according to claim 9, wherein said condenser lens are flat-convex lens.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060028050A KR20070097189A (en) | 2006-03-28 | 2006-03-28 | Method for dividing substrate and substrate dividing apparatus for using it |
| KR28050/06 | 2006-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101046571A CN101046571A (en) | 2007-10-03 |
| CN101046571B true CN101046571B (en) | 2011-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101712070A Expired - Fee Related CN101046571B (en) | 2006-03-28 | 2006-12-21 | Method for cutting substrate and substrate cutting apparatus using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20070235418A1 (en) |
| JP (1) | JP2007260773A (en) |
| KR (1) | KR20070097189A (en) |
| CN (1) | CN101046571B (en) |
| TW (1) | TW200735990A (en) |
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| CN102632335A (en) * | 2012-04-25 | 2012-08-15 | 肖和平 | Laser processing method of surface layer high-reflectivity material |
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| KR102069718B1 (en) | 2018-02-28 | 2020-01-23 | 공주대학교 산학협력단 | Spindle Monitoring System Using High Pass Filter |
| US11215552B2 (en) * | 2018-06-14 | 2022-01-04 | The Boeing Company | Apparatus and method for bond inspection with limited access |
| TWI681241B (en) * | 2018-12-04 | 2020-01-01 | 友達光電股份有限公司 | Manufacturing method for display device and display device utilized thereof |
| CN110293326B (en) * | 2019-07-30 | 2021-04-13 | 长沙理工大学 | Method for cutting thick plate by double-beam laser |
| CN112935528B (en) * | 2021-01-29 | 2023-05-23 | 西安工业大学 | Method and device for high-quality cutting of wafer with larger thickness |
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| JP2002224871A (en) * | 2001-01-31 | 2002-08-13 | Seiko Epson Corp | Laser beam cutting method, manufacturing method for optoelectronic device, optoelectronic device, electronic device and laser beam cutting device |
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- 2006-10-26 JP JP2006291229A patent/JP2007260773A/en active Pending
- 2006-10-31 US US11/590,308 patent/US20070235418A1/en not_active Abandoned
- 2006-11-20 TW TW095142894A patent/TW200735990A/en unknown
- 2006-12-21 CN CN2006101712070A patent/CN101046571B/en not_active Expired - Fee Related
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| US4543464A (en) * | 1982-07-19 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for scribing semiconductor wafer with laser beam |
| CN1853840A (en) * | 2005-04-27 | 2006-11-01 | 彩霸阳光株式会社 | Plate cutting method and laser processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102632335A (en) * | 2012-04-25 | 2012-08-15 | 肖和平 | Laser processing method of surface layer high-reflectivity material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007260773A (en) | 2007-10-11 |
| US20070235418A1 (en) | 2007-10-11 |
| KR20070097189A (en) | 2007-10-04 |
| CN101046571A (en) | 2007-10-03 |
| TW200735990A (en) | 2007-10-01 |
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