CA1129118A - Semiconductor devices and method of manufacturing the same - Google Patents
Semiconductor devices and method of manufacturing the sameInfo
- Publication number
- CA1129118A CA1129118A CA331,965A CA331965A CA1129118A CA 1129118 A CA1129118 A CA 1129118A CA 331965 A CA331965 A CA 331965A CA 1129118 A CA1129118 A CA 1129118A
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- CA
- Canada
- Prior art keywords
- region
- implanted
- ions
- substrate
- insulating film
- Prior art date
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- Expired
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 189
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims abstract description 194
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 184
- 230000005669 field effect Effects 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims description 200
- 238000005530 etching Methods 0.000 claims description 151
- 239000012535 impurity Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 50
- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 67
- 229910052581 Si3N4 Inorganic materials 0.000 description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
- 238000010276 construction Methods 0.000 description 27
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 10
- 229960004838 phosphoric acid Drugs 0.000 description 10
- 235000011007 phosphoric acid Nutrition 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Abstract
Abstract of the Disclosure In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side sur-faces having a negative coefficient of gradient between the substrate and the top of the mesa.
Description
liZ9~18 Specification Title of the Invention Semiconductor Devices and Method of Manufacturing the Same Background of the Invention This invention relates to a semiconductor device and a method of manufacturing the same, more particularly a construc-tion of a doped polycrystalline silicon region formed on a semiconductor or an insulation substrate, an insulation isolat-ing structure between the doped polycrystalline silicon region and another regions, a bipolar transistor utilizing the doped polycrystalline silicon region, a junction type field effect transistor and a method of manufacturing the same.
1'0~ Recent tendency in the development of IC semiconductor technique is concentrated how to increase the density of the integrated circuits, to improve the performance and to simplify the manufacturing steps. To attain these objects it has been proposed to variously change combinations of a polycrystalline semiconductor layer and a semiconductor substrate or such insu-lating films as SiO2 and Si3N4 films to be formed on the semi-conductor substrate. However, each of these combinations .is-not yet perfect and for long years it has been desired to develope semiconductor devices and methods of manufacturing the same capable of improving the density, and the performance and simplifying the manufacturing process.
To have better understanding of the invention, one ,:
'~
l~Z9~
prior art technique will be described hereunder. For example, let us consider a case wherein an insulating film of SiO2, for example, is formed on a silicon substrate, and a wiring layer comprising a polycrystalline silicon layer is formed on S the insulating film, or an electrode of a transistor is formed on the substrate. One prior art method comprises the steps of forming a polycrystalline silicon layer on the insulating film, depositing a photoresist on the polycrystalline silicon layer and then chemically etching off unnecessary portions of the polycrystalline silicon layer by using the photoresist. In the case of a polycrystalline silicon doped with boron at a density of about 1021 atoms/cm3, an etchant consisting of HF:HNO3:H2O
= 1:20:20 is suitable. With this method, however, the spacing between adjacent wiring layers or electrodes and the substrate J
is determined by a minimum gap that permits formation of a photoresist pattern. This minimum gap is generally of the order of 3 microns. For this reason, when a transistor is pre-pared with this method not only the base resistance is rela-tively large, but also the parasitic collector-base capacitance i8 also large. Where the polycrystalline silicon layer is worked with only chemical etching, the portions of the poly-crystalline silicon layer underlying the photoresist and which - should be retained to form an wiring layer or an electrode would be etched off ~side etching) with the result that the spacing between adjacent wiring layers would become larger than expected. Moreover, due to the effect of the side etching, the l~Z~118 cross-sectional configuration becomes a mesa which has a smaller area than expected, thus limiting the current capacity of the wiring layer.
According to another prior art method, the polycrystal-line silicon layer the oxide film is etched off with plasma by using a photoresist pattern disposed on the polycrystalline silicon layer as disclosed in J. Electrochem. Soc.: "Solid-State Sience and Technologyn, May 1978, Vol. 125 No. 5, page 827 - 828 with this method, the polycrystalline silicon layer would be worked to have a desired mask configuration, that is to cause the cross-sectional configuration of the wiring pattern to have a rectangular configuration as determined by the photoresist pattern. Similar to the chemical etching, the spacing to the adjacent wiring layer, however, is determined by the working accuracy of the photoresist so that the minimum gap is of the order of about 3 microns. Moreover, as the edges of the wiring layer are sharp, there is a fear of breaking the layer or wires by such sharp edges. The base resistance and the collector-~ase parasitic capacitance are also high as in the case of the chemical etching.
Still another prior art method comprises the steps of orming a layer of a material having a lower oxidizing speed than polycrystalline silicon, for example Si3N4, and having a pre-determined pattern on a polycrystalline silicon layer on an oxide ilm, selectively heat-oxidizing the polycrystalline silicon layer so as to form an isolated region of the polycrystalline silicon ` `` 1~2~
layer, that is a wiring layer or an electrode. This method is disclosed in U.S. Patent No. 4,074,304, issued February 14, 1978 to Shiba for instance. However, this method presents the same problem as firstly described method.
According to yet another prior art method an insulating film is selectively formed on a polycrystalline silicon layer formed on an oxide film, and such impurity as boron is diffused into a portion of the polycrystalline silicon layer not covered by the insulating film. The insulating film formed on the polycrystalline silicon layer is selectively removed and thereafter the portion of the polycrystalline silicon not containing the impurity by using the difference in the etching speed between the portions containing and not containing the impurity when a KOH type etchant is used. This method is disclosed, for example, in British Patent No. 1,417,170, published December 10, 1975 in the name of Mullard Ltd.
According to this method, since the impurity selectively heat-diffuse into the portion of the poly-crystalline silicon layer under a selectively arranged insulating film, it is possible to form a wiring layer diffused with the impurity at a closer position (for example -with a spacing of less than 2 microns) than those formed by various methods aforementioned. Moreover, the wiring layer would have overhang edges which project toward adjacent wiring layers. Consequently, although the cross-sectional area of the wiring layer becomes larger but the sharp edges damage an insulating layer or a wiring layer formed thereon.
mb/J,J ~ 4 ~
,: . - ~, :, :: .
`:
':
Where a transistor is prepared according to one of many well known methods, it is necessary to use at least four photoetching steps for forming a base diffusion opening, an emitter diffusion window, a base electrode lead window and an electrode forming window and it is necessary to use various photomask patterns for defining the contour of respecti~e performance regions. For this reason, in order to produce a high density and high performance transistor, it is necessary to align the respective photoetching positions and to work at 10- a high degree of accuracy. This decreases the yield, making it difficult to obtain extremely fine transistors.
To solve these problems we have already proposed a method as disclosed in applicant's Canadian Patent NoO
1,093,703, issued January 13, 1981.
In a transistor disclosed therein, a base electrode comprising a polycrystalline layer having a constant width is disposed adjacent a boundary and around the entire periphery of a base region surface formed on a semiconductor substrate and having a base contact about the periphery, an emitter electrode comprising polycrystalline silicon is formed on the surface of an island-shaped emitter region formed in the baqe region, and the base and emitter electrodes are electrically isolated by an insulating film.
With this construction, however, when forming the emitter electrode wherein a polycrystalline silicon layer is provided beneath the emitter electrode for the purpose of stabilizing the electrode for a thin emitter junction, the mb/J - 5 -.
polycrystalline silicon layer is required to completely cover the emitter region so that it is necessary to increase the peripheral dimension of the emitter region by taking into consideration a position aligning allowance. This hinders manufacture of extremely fine transistors. Further, with this construction, it is necessary to determine the position of the emitter-base junction at a portion which is in contact with the insulating film of a small width and serves to isolate the base electrode from the emitter electrode so that the position of the side junction of the emitter electrode is determined ac-cording to the relationship between the depth of the base con-tact region and the emitter depth. This determines the insu-lating strength between the emitter and base electrodes and since the breakdown voltage is determined by controlling the lateral dispersion, the electrical characteristics of the resulting transistors are not always uniform. With this con-struction, the side wall of the emitter electrodes comprise a p-n junction between regions each having a high impurity concentration, thus increasing the parasitic capacitance and decreasing fT. Moreover, according to this construction, the -emitter electrode is formed as a fourth layer with respect to the substrate thus complicating the manufacturing steps of such multilaver construction and rendering it impossible to obtain high density integrated circuits.
SummarY of the Invention Accordingly, it is the principal object of this inven-., - , ~ ' ' , tion to provide a semiconductor device provided with a conduc-tive layer having at least a predetermined sectional area and capable of providing multilayer wirings and a method of such semiconductor device.
Another object of this invention is to provide a semiconductor device and a method of manufacturing the same capable of providing high speed transistors having uniform electric characteristics.
Still another object of this invention is to provide an improved semiconductor device and a method of manufacturing the same which uniquely utilizes self-aligning technique and can minimize use of highly accurate photomasks.
Yet another object of this invention is to provide a semiconductor device and a method of manufacturing the same capable of manufacturing extremely fine transistors without the problems of position alignment and working accuracy when photo-etching the base regions.
A further object of this invention is to obtain a semiconductor device which is made flat thereby increasing the density of the integrated circuits, and a method of manufactur-ing such semiconductor device.
Still further object of this invention is to provide an improved semiconductor device and a method of manufacturing the same which can increase the density of the integrated circuits thereby decreasing the parasitic capacitance and the resistivity of the elements thus increasing the operating speed ~l~g~8 and decreasing power consumption.
According to one aspect of this invention, there is provided a bipolar transistor of the type comprising a semiconductor substrate of a first conductivity type and acting as a collector region; an island shaped base region of a second .
.
~ mb/~L - 8 -conductivity type formed on the surface of the semiconductor substrate and surrounded by a first insulating film; a first conductivity type emitter region formed in the base region; a doped polycrystalline silicon region of the first conductivity type, the doped polycrystalline silicon region being in the form of a mesa adjacent the emitter region and acting as an emitter electrode, a second conductivity type base contact in contact with the periphery of the base region; and a doped polycrystalline silicon region of the second conductivity type contiguous with the base contact and extending in the direction of the first insulating film, the doped polycrystalline silicon region of the second conductivity type acting as a base elec-trode, wherein the doped polycrystalline silicon region of the second conductivity type takes the form of a projection, one side surface of the projection adjacent the doped polycrystal-line silicon region of the first conductivity type having a negative coefficient of gradient between a portion of the pro-jection at or near the projection and the upper end of the pro~ection, and wherein the bipolar transistor furtber co~-prising a second insulatinq covering substantially the entire surface of the substrate, and a wiring layer interconnecting the respective doped polycrystalline silicon regions and the other elements.
According to another embodiment of this invention, there is provided a junction type field effect transistor of the type comprising a semiconductor type substrate of a first 3~8 conductivity type; a first insulating film forming an island shaped region on one surface of the semiconductor substrate;
second and drain regions of a second conductivity type formed on a portion of the semiconductor substrate adjacent the first insulating film defining the island shaped region; a doped polycrystalline silicon region of a second conductivity type extending from the source and drain regions onto the first insulating film and acting as source and drain electrodes respectively; a region of the second conductivity type formed in the island shaped region of the semiconductor substrate; a mesa shaped doped polycrystalline.silicon region of the second conductivity type formed on the gate region and acting as a gate electrode; a second insulating film covering substantially the entire surface of the substrate; and a wiring layer inter-lS connecting respective doped polycrystalline silicon regions and the other elements, wherein the doped polycrystalline region utilized as the source and drain electrodes takes the form of a projection, one side surface of the projection adjacent the doped polycrystalline silicon region utilized as the gate ele.c-trode having a generally negative coefficient of gradient bet-ween a portion of the projection at or near the substrate and the top ofsaid projection.
According to another aspect of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of forming a polycrystalline semiconductor layer on a substrate; sequentially forming first and second ~' ~
insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed portion of the polycrystalline semi-conductor layer by using remaining portion of the first and second insulating film as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor later not-implanted with the ions; etching the exposed portion of the polycrystalline semi-conductor layer not-implanted with the ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of the projection at or near the substrate -~
and the upper end of the projection; and covering the surface of the substrate with an insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and~econd insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ion of an impurity; implanting ions of the impurity into the exposed portion of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; etching the exposed portion of the polycrystalline semi-conductor layer not-implanted with the ions the form a projec-tion having side surfaces having a negative coefficient of gradient between a portion of said projection at or near the substrate and the upper end of the projection; and covering the surface of the substrate with an insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed surface of the polycrystalline semi-conductor layer by using remaining portions of the first and second insulating films as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with the ions; removing the second insulating film; etching the exposed portion of the polycrystalline semiconductor layer not-implanted with the ions for insulating and æeparating each other the ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with the ions, thus forming a projection on the ion-implanted polycrys-talline semiconductor layer, the projection having a sidesurface having a negative coefficient of gradient between a portion on the projection at or near the substrate and the upper end of the projection, and providing for the polycrystal-line semiconductor layer a concave side edge having a positive coefficient gradient between a portion at or near the substrate and one end of the concave side edge; covering one surface of the substrate with a fourth insulating film; removing the first insulating film overlying the portion of the polycrystalline semiconductor layer not-implanted witb the ions; doping an impurity into a portion of the polycrystalline semiconductor region not-implanted with the ions; and covering the surface of the substrate with a fifth insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor.
device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor later; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ions of an impurity; implanting the ions of the impurity into an exposed surface of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; removing the second insulating film; etching the exposed portion of the polycrystalline semiconductor layer not-implanted with the ions for insulating and separating each other the ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with the ions, thus forming a projection on the ion-implanted poly-crystalline semiconductor, the projection having a side surface having a negative coefficient of gradient between a portion on the projection at or near the substrate and the upper end of the projection, and providing for the polycrystalline semicon-ductor layer a concave side edge having a positive coefficient of gradient between a portion at or near the substrate and one end of the concave side edge; covering one surface of the substrate with a fourth insulating film; removing the first insulating film overlying the portion of the polycrystalline semiconductor layer not-implanted with the ions; doping an impurity into a portion of polycrystalline semiconductor layer not-implanted with the ions; and covering the surface of sub-strate with a fifth insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor , device comprising the steps of; forming a polycrystalline semiconductor layer on a substrate; sequentially forming first and second insulating films having different etching character-istics on the polycrystalline semiconductor layer; etching the second insulating film according to a predetermined mask pat-tern; etching the first insulating film by using a remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed portion of the polycrystal-line semiconductor layer by using remaining portions of the first and second insulating films as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with the ions; etching the exposed portion of the polycrystal-line semiconductor layer not-implanted with the ions thus sepa-rating an ion-implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with the ions and having a relatively thickness; heat oxidizing the substrate so as to oxidize the relatively thin not-implanted polycrystalline semiconductor region to insulate and separate-the same from the ion-implanted polycrystalline semiconductor region, thus providing for the insulated and separated polycry-.
stalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of ....
the projection at or near the substrate and one end of the pro-jection, and providing for the insulated and separated poly-crystalline semiconductor region a mesa having a positive coef-ficient of gradient at or near the substrate; removing the insulating film covering the polycrystalline semiconductor region not-implanted with the ions; doping an impurity into the polycrystalline semiconductor region not-doped with the ions;
and covering the substrate surface with a third insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film according to a predetermined mask pattern;
etching the first insulating film by using a remaining portion of the second insulating film as a mask; side etching the :~
remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ions of an impurity implanting the ions of the impurity into an exposed portion of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; etching the exposed of the polycrystalline semiconductor layer not-implanted with the ions thus separating.
an ion-implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with the ions and having a relatively thin thickness; heat-oxidizing the substrate surface so as to oxidize the relatively thin not-im-planted polycrystalline semiconductor region to insulate and ~91~8 separate the same from the in implanted polycrystalline semi-conductor region, thus providing for the insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of the projection at or near the substrate and one end of the projection, and providing for the insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near the substrate; removing the insulating film covering the polycrystalline semiconductor region not-implanted with the ions; doping an impurity into the polycrystalline semiconductor region not-doped with the ions;
and covering the substrate surface with a third insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into the substrate and for simulta-neously forming a base diffusion window surrounded by the region; forming a base region having a second conductivity type through the window; forming a polycrystalline silicon layer-, and second and third insulating layers having different etching characteristics on the substrate; selectively etching the third insulating layer to form a third insulation region on the base regio~`and near the central portion thereof; etching the second insulating layer to form a second insulating region by using the third insulating region as a mask; implanting ions of an impurity having the same conductivity type as the base region into the polycrystalline silicon layer by utilizing the second and third insulating regions as masks, thereby separating the same into a region implanted with the ions and a region not-im-planted with the ions; side etching the second insulating region for exposing the polycrystalline silicon region not-implanted with the ions; etching the region not-implanted with the ions for insulating and separating the regions implanted and not-im-planted with the ions; forming a heat oxide film on the surface of the substrate and at the same time diffusing an impurity in the in implanted region contiguous to the base region into the same for forming a base contact; removing the insulating film for exposing the polycrystalline silicon region not-implanted with the ions; diffusing an impurity of the first conductivity l lS type into the exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in the base region of the semiconductor substrate; and forming wiring layers ; in the ion-implanted region and in the regions diffused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first in-sulator region extending into the substrate and for simultane-ously forming a base diffusion window surrounded by the region;
forming a base region having a second conductivity type through ~L~2~
the window; forming a polycrystalline silicon layer, and second and third insulator layers having different etching character-istics on the substrate; selectively etching the third insulat-ing layer to form a third insulating region on the base regin and near the central portion thereof; etching the second insu-lating layer to form a second insulating regin by using the third insulating ~egion as a mask; side etching the second insulating region for exposing the polycrystalline silicon region not-implanted with ions of an impurity having the same conductivity type as the base region; implanting the ions into the polycrystalline sili~on layer by utilizing the second and third insulating regions as masks thereby separating the same into a regin implanted with the ions and a region not-implanted with the ions; etching the region not-implanted with the ions for insulating and separating the regions implanted and not-implanted with the ions; forming a heat oxide film on the surface of the substrate and at the same time diffusing an impurity in the ion-implanted region into the same for forming a baæe contact; removing the insulating film for exposing the polycrystalline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type into the, exposed polycrystalline silicon region for forming an emitter region,of the.first conductivity type in the base region of the semiconductor substrate; and forming wiring layers in the ion-implanted region and in the regins diffused with the impurityof the first conductivity type.
,.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; successively forming aon a semiconduc-tor substrate of a first conductivity type a first polycrystal-line silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic and a third insulating film having a third etching characteristic, the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selectively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third in-sulating film as a mask, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the second and first insulating films by using the remaining portion of the third insulating film; removing portions of the second and first insulating films implanted with the ions; heating a first polycrystalline silicon layer about the first insulating region not-implanted with the ions of the first insulating film to heat-oxidize the first poly-crystalline silicon layer to the surface of the substrate by using the remaining first insulating region as a mask thereby forming a base region window; forming a non-doped second polycrystalline silicon over the entire surface of the sub-strate; implanting ions of an impurity of the first conductivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrystalline sili-. - .,~
con layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions; etching the exposed and not-implanted region for forming an island shaped polycrystalline silicon region having a top portion projecting _ into the first insulating region, the island shaped polycrys-talline silicon region being insulated and separated from the polycrystalline silicon region implanted with the ions; removing the second insulating region; etching the region implanted with the ions to change the same to have a predetermined shape;
heating the substrate to form a heat oxide film on the surface of the substrate and at the same time to cause the impurity in the polycrystalline silicon region implanted with the ions and in contact with the substrate to diffuse thereinto for forming a base contact of the first conductivity type; implanting ions, . of an impurity of the first conductivity type into a regin on the surface of the substrate connected to the base contact thus forming a ~ase region; removing the first insulating film on the polycrystalline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type in the polycrys,talline silicon region not-implanted with the ions for forming an emitter region of a second conductivity type in the polycrystalline silicon region not-implanted with the ions; and forming wiring layers for the region implanted with the ions and for the polycrystalline silicon region diffused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a junction type field effect transistor comprising the steps of; successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insu-lating film having the first etching characteristic. the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selectively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third insu-lating film, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the third and first insulating films by using the remaining portion of the third insulating film; removing portion of the third and first insulating films implanted with the ions; heating a first polycrystalline silicon layer about the first insulating region not-implanted with the ions of the first insulating film to heat-oxidize the first polycrystalline silicon layer up to the surface of the substrate by using the remaining first insulating region as a mask; orming a non-doped second polycrystalline silicon layer over the entire surface of the substrate; im-planting ions of an impurity of the first conductivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrystalline silicon layers into first and second regions implanted with the ions, and a region partially exposed and not-implanted with the ions;
etching the exposed and not-implanted region or forming an island shaped irst polycrystalline silicon region having a portion projecting into the first insulating region, the island shaped polycrystalline silicon region being insulated and separated from the polycrystalline silicon region implanted with the ions; removing the second insulating region; etching lS the region implanted with the ions to change the same to have a predetermined shape; heating the substrate to form a heat oxide film on the surface of the substrate and at the same time to . cause the impurity in the polycrystalline silicon region im-planted with ion and in contact with the substrate to dif~use thereinto for forming a base contact of the first conductivity type; implanting ions of the first conductivity type into a region on the surface of the substrate connected to the base contact thus forming a base region; removing the first insulat-ing film on the polycrystalline cilicon region not-implanted with the ions; diffusing an impurity of the first conductivity type in the polycrystalline silicon region not-implanted with -., ~ , . ...;
the ions for forming a gate region on the surface of the substrate; and forming wiring layers for the region implanted with the ions and for the polycrystalline silicon region dif-fused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; successively forming, on a semiconduc-tor substrate of a first conductivity type, a first polycrys-talline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insulating film having the first etching characteristic, the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selec-tively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third insulating film as a mask, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the third and first insulating films by using the remaining portion of the third insulating film; removing portions of the third and first insu-lating films implanted with the ions; heating a first polycrys-talline silicon layer about the first insulating region not-.
implanted with the ions of the first insulating film to heat-oxidize the first polycrystalline silicon layer up to the surface ~g~
of the substrate by using the remaining first insulating region thereby forming a base region window; forming a non-doped second polycrystalline silicon layer over the entire surface of the substrate; implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layerdeposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions;
etching the exposed and not-implanted region for forming an ion-implanted polycrystalline silicon`region and a relatively thin polycrystalline silicon region implanted with the ions, and disposed adjacent to the ion-implanted polycrystalline silicon region; oxidizing the relatively thin polyarystalline silicon region not-implanted with the ions to insulate and separate the ion-implanted and not-implanted polycrystalline silicon regions, the insulated and separated polycrystalline silicon region implanted with the ions having an edge projecting from a portion at or near the substrate, the polycrystalline silicon region not-implanted with the ions being in the form of a mesa having edges of a positive coefficient of gradient bet-ween a portion thereof at or near the substrate and the top of the mesa, the oxidation step causing an impurity in the ion-im-planted region to diffuse into the substrate to form a base contact of the first conductivity type; forming a base region by implanting ions of an impurity of the first conductivity .
type into a region on the substrate surface connected to the base region; removing the first insulating film on the poly-crystalline silicon region not-implanted with the ions; dif-fusing an impurity of the first conductivity type into the polycrystalline region not-implanted with the ions so as to form an emitter region of the second conductivity type in the base region in the substrate surface; and forming wiring layers for the polycrystalline silicon region implanted with the ions and for the polycrystalline silic~on region diffused with the impurity of the first conductivity type.
Brief Description Drawings In the accompanying drawings:
Fig. 1 is a sectional view showing the basic construc-tion of a semiconductor device embodying the invention.
Figs. 2A through 2K are sectional views showing suc-cessive steps of manufacturing the semiconductor device shown in Fig. 1 in accordance with one embodiment of the method of this invention;
Figs. 3A and 3B show modified steps shown in Fig. 2;
Figs. 4A through 4M are sectional views showing suc-cessive steps of manufacturing a bipolar transistor according to the method of this invention;
Figs. 5A and 5B show modified steps shown in Fig. 4 ~ Fig. 6 is a sectional view showing a modification of a steps shown in Fig. 4;
Figs. 7A and 7B are sectional views showing modifica-tions of the steps shown in Fig. 4;
Figs. 8A through 8F are sectional views showing another embodiment of the method of manufacturing a bipolar transistor according to this invention;
Fig. 9 is a sectional view showing the entire con-struction of a bipolar transistor prepared by the method shown in Figs. 8A through 8R;
Figs. lOA through lOC are sectional views showing modified steps where the method of this invention shown in Figs. 8A through 8R is applied to the manufacture of a junction transistor; and Figs. llA and llB show modified steps of the method shown in Figs. 8A through 8R.
DescriPtion of the Preferred Bmbodiments J
The semiconductor device shown in Fig. 1 comprises a silicon semiconductor substrate 11, a heat oxide film (SiO2) 12 having a thickness of about 0.6 micron and formed on the substrate 11 and polycrystalline silicon layers 13, 14 and 15 doped with boron and overlying the SiO2 film. The surfaces of the polycrystalline silicon layers 13, 14 and 15 and the exposed surface of the substrate are covered by an oxide film 16.
It is particularly to be noted that the opposite edges 14a and l4b of the polycrystalline silicon layer 14 are gradu-ally curved and that these edges are interconnected by a flat central portion 14c. The right hand polycrystalline silicon ~9~18 layer 15 has a similar edge construction whereas the left hand polycrystalline silicon layer 13 has a conventional mesa type edge construction.
With such convex edge construction it is possible to ~ake larger the current capacity than that of the mesa type construction when the polycrystalline silicon layer 14 is used as a wiring layer or a diffused layer. More particularly, with the edge construction of this invention, the sectional area of the edge is increased 200% than that of the mesa type edge construction.
In addition to the aforementioned increase in the current capacity, the edge construction of the current capacity, the edge construction of this invention can reduce the longi-tudinal dimension of respective polycrystalline layers than that of the mesa type edge construction without charging the other dimensions, with the result that it is possible to in-crease the density of component elements or integrated circuits formed on a substrate.
Figs. 2A through 2K show successive steps of manufa~-turing the semiconductor device shown in Fig. 1. At first, a Nor P type silicon substrate 20 shown in Fig. 2A is prepared an~
a heat oxide film 21(SiO2) having a thickness of 0.6 micron is formed on the substrate. Then, a not-doped polycrystalline silicon layer 22 is formed on the SiO2 film 21 by CVD tech-nique, for instance, to have a thickness of 0.4 - 0.5 micron.
Then, a Si3N4 film 24 having a thickness of 0.12 micron is form-~%9~
ed on the polycrystalline silicon layer 22 and then a SiO2 film 25 having a thickness of about 0~5 - 0.6 micron is formed on the Si3N4 film 24. This state is shown by Fig. 2B.
Then after coating a well known photoresist (not shown) on the silicon oxide film 25, the photoresist is exposed to light through a photomask and then etched. Then the SiO2 film 25 is etched with an etching solution containing hydrofluoric acid by using the remaining photoresist as a mask. Thereafter, the Si3N4 film 24 is etched with hot phosphoric acid. The etch-ing of the SiO2 film may be dry etching. This state is shownin Fig. 2C in which 25a - 25c and 24a - 24c show SiO2 regions and Si3N4 regions respectively remaining after the etching step.
The edges of these regions are substantially vertical.
Then, boron is injected into the entire surface of the l substrate by ion implantation technique to a dose af about lx1015 - 1016 atoms/cm2. The ion implantation may be made once or more times under an implantation energy of 20 - 150 kev, with the result that boron of the described dose distributes about a plane at a depth of about 0.2 - 0.4 micron. The boron ions implanted into the polycrystalline silicon collide against the polycrystalline silicon so that the ion-implanted regions 22a, 22b, and 22c and 22d in the polycrystalline silicon layer 22 are contiguous with not-implanted regions 22c, 22f and 229.
,... .
Of course, the interfaces between ion-implanted regions 22a -22d and not-implanted regions 22e - 22g are defined by the edges of the Si3N4 film which has been used as a mask at the time of ion implantation.
Following the ion implantation, the assembly is heat trreated at a temperature of 800C for 15 - 20 minutes to recover crystal damage caused by the ion implantation. In this manner, ion-implanted regions or electroconductive regions 22a - 22d are formed.
Then, portions of the Si3N4 films 24a - 24c at about 0.2 - 0.3 micron from the edges are etched off with hot phos-phoric acid. This state is shown in Fig. 2E. As can be noted from Fig. 2E, portions of the polycrystalline silicon regions 22e - 22g not-implanted with ions and covered by Si3N4 films 24a - 24c are exposed.
Then the SiO2 regions 25a - 25c are removed by using hydrofluoric type etching solution. This state is shown in Fig. 2F. Then, etching is made with potassium hydroxide (KOH) at a temperature of 60C - 63C for 3 to 4 minutes. The etchin~
speed at this time of the not-implanted regions 22e - 22g is higher by one order of magnitude than that of the implanted regions 22a - 22d. Accordingly, when etched under the condi-tions described above, the sides of the not-implanted regions 22e - 22g are etched by 0.4 - 0.5 microns whereas the implanted regions are etched by about 460 - 500 A which is smaller about one order of magnitude than that of the not-implanted regions.
Con5equently, the shape of the regions 22e - 22g is converted into frustum or mesa type regions 22e' - 22g' having side sur-faces inclined upwardly with their tops separated inwardly from :' ;; ' , the edges of the Si3N4 films 24a' - 24c' by about 0.4 - 0.5 mi-crons, whereas the regions 22a - 22d are converted to have a configuration as shown by 22e' - 229' in which the edges are slightly rounded because their surfaces are etched at a definite rate and at a uniform speed. This state is shown in Fig. 2G.
Thus, the edges of the regions 22a' - 22d' are convexed starting from the insulating film 21 or a portion close thereto.
Thereafter heat oxide films 27a - 27d are formed on the entire surface to a thickness of 0.2 - 0.3 microns, under a state shown in Fig. 2F. Since the Si3N4 films 24a' - 24c' are difficult to oxidize, they are oxidized only slightly so that their shape does not change in any appreciable extent. However, side surfaces of the regions 22e' - 22g' not-implanted with ions and located at recessed portions underlying these Si3N4 films 24a' - 24c' are also formed with SiO2 films 27a - 27d having a uniform thickness as shown in Fig. 2H.
Then the oxide films on the surface of the Si3N4 films 24a' - 24c' are removed by etching with dilute hydrofluoric acid for about 10 seconds for example, and then the Si3N4 films 24a' - 24c' are removed by etching with phosphoric acid at 160 C
for 30 minutes. This state is shown in Fig. 2I. As shown, the top surfaces 22e'top - 22g'top of the not-implanted regions 22e' ~229' are exposed.
Then, such impurity as phosphor, arsenic and boron is injected into the regions 22e' - 229' by ion implantation or heat diffusion technique through the top surfaces 22e'top -, ~lZ~
22g'top of the regions 22e' - 22g' by using SiO2 films 27a -27d as masks thus converting these regions into electroconduc-tive regions 28a - 28c as shown in Fig. 2J.
Finally, a heat oxide film 29 is deposited over the entire surface as shown in Fig. 2K. The resulting regions 22a' - 22d' and 28a - 28c can be used as wiring layers, electrodes or resistance layers which are formed very closely, for example with a spacing of about 0.5 - l micron.
When respective layers are formed as above described, in addition to the forementioned advantages in the construction, the following advantages result.
More particularly, in the step of manufacturing the resistance or wiring layer, the photomask is used anly once, and since adjacent regions are formed by using the edges of the insulating mask layer which has already been formed with the photomask, thus providing self-aligning. This substantially decreases the number of steps. Although the edges of a photo-resist pattern are used, the spacing between adjacent regions is determined by the thickness of the polycrystalline silicon layer constituting such regions and by the etching time of this layer, especially the portions thereof not-implanted with ions.
Accordingly, it is possible to separate and insulate adjacen~t regions with small gaps of the order of less than l micron. This is different greatly from the prior art in which the spacing between adjacent regions is determined by a mask pattern. Thus, when the method of this invention is applied to ~2,~
the manufacture of wirings, it is possible to increase the density of the wirings by a factor of 2 or more. Moreover, the spacing between adjacent regions is not influenced by the work-ing accuracy of the photoetching step.
As shown in Fig. 2H, with the method described above, the insulating films Si3N4 overlying the regions not-impart-ed with ions and the insulating film (SiO2) overlying another portions have different etching characteristics so that in order to diffuse an impurity into the regions not-implanted with ions, it is only necessary to etch off the insulating films overlying the regions not-implanted with ions and diffusion can be effect-ed by using the other insulating f ilms as masks.
Figs. 3A and 3B show modifications of certain steps shown in Figs. 2A - 2K. Thus, Fig. 3A corresponds to Fig. 2G.
Thus, when etching the polycrystalline silicon regions 22e -22g not-implanted with ions in the step shown in Fig. 2F, KOH
is used for etching conditions of 60 - 63VC and 2 minutes.
Then, portions 22esn - 22gs" adjacent regions 22a" - 22d" which were obtained from regions 22e" - 22g" by etching are not removed completely to expose the oxide films as shown in Fig.
2G, but these portions 22es" - 22gs" are retained with a thick-ness of about 1200 - 1500 A.
Then oxide films 31a - 31d having a thickness of ahout 0.24 - 0.3 microns are formed on the entire surface of the substrate by heat oxidation process. Then, the exposed surfaces of respective regions are oxidized. Although the thickness of ~g~
the portion of respective regions which are converted into oxide films is different depending upon the temperature and time, where oxidation conditions 800C and 6~0 minutes are used, regions 22es" - 22gs" are completely oxidized to assume a state as shown in Fig. 3B. With this modified method, it is also possible to isolate regions 22a' - 22c' and regions 22e' - 22g' with insu-lating films having a small thickness in the same manner as - shown in Fig. 2H.
Figs. 4A - 4M show still another modification of the method of this invention applied for the fabrication of a bi-polar transistor.
At first, as shown in Fig. 4A, a N type silicon semi-conductor substrate 41 having a resistivity of 1 ohm-entimeter is prepared. Then, heat oxide films 42a and 42b are formed on the surface of the substrate with well known photomask tech-nique, except a portion 41a thereof which is used as a window for forming the base electrode of the transistor as will be described hereinafter. This state is shown in Fig. 4B.
Then, a P type impurity ions are diffused or injected into the substrate 41 to a thickness of 0.2 - 0.3 microns through window 41a of the oxide films 42a and 42b to form a base region 43 as shown in Fig. 4C. The resulting impurity concentration at the surface of the base region 43 is about 1-5x1018 atoms/cm3.
Then, by using CVD process, for example, a non-doped polycrystalline silicon layer 45 is formed on the entire sur-llZg~
~ace of the substrate to a thickness of 0.4 - 0.5 microns.
Then, on this polycrystalline silicon layer 45 is formed a Si3N4 film 46 baving a thickness of about 0.12 microns, and thereafter an oxide film 47 having a thickness of about 0.5 -0.6 microns is formed on the nitride film 46 as shown in Fig.
4D.
Aftee coating a well known photoresist (not shown) on - the oxide film 47, a photomask is used to expose to light the photoresist and then etch the same. Then SiO2 film 47 is etched with a hydrofluoric acid etchant by using the remaining photoresist followed by the etching step of the Si3N4 with hot phosphoric acid. Thereafter, the photoresist which has been used as a mask is removed. This state is shown in Fig. 4E, in which the SiO2 region and the Si3N4 region remaining after the etching step are designated by 47a and 46a respectively.
The edges of these regions are used for isolating the regions to be described later.
Then, as shown in Fig. 4F, ions of boron is implanted into the entire surface of the substrate to a dose of lx1015 -1x1016 atoms/cm2. Such implantation may be made once or more time, and energy of ion implantation ranges from 40 kev to 120 kev thus distributing the ions of boron about a plane at a depth of 0.1 - 0.4 microns. In the same manner as in the foregoing embodiments, the boron ions implanted into the polycrystalline silicon collide with silicon crystals so that the ion-implanted regions 45b and 45c gradually change to not-implanted regions 45a. After the ion-implantation, the assembly is heat-treated at 800C for 15 - 20 minutes, for example, thus recovering the damage of the crystals of the polycrystalline silicon caused by the ion implantation.
Portions of the Si3N4 film 46a between its edges and points spaced 0.2 to 0.3 microns therefrom are etched off with hot phosphoric said, as shown in Fig. 4G. This etching step exposed a portion of the polycrystalline silicon region 45a not-implanted with ions.
At a state shown in Fig. 4H, the assembly is etched with an alkaline etchant, for example KOH, at a temperature of 60 - 63 C for 3 minutes. With KOH, the etching speed of the not-implanted region 45a is faster by about one order of mag-nitude than that of the implanted regions 45b and 45c. Con-sequently, when etched under the conditions described above, the not-implanted region 45a is side etched by 0.4 - 0.5 microns, whereas the ion-implanted regions 45b and 45c are side etched by 400 - 500 A which is smaller one order of magnitude.
Consequently, the configuration of the region 45a is changed to a region 45a' of a frustum form having inwardly inclined side surfaces with top ends terminating at points 0.4 - 0.5 microns inward from the edges of the Si3N4 film, whereas the regions 45b and 45c are changed to regions 45b' and 45c' having surfaces slightly etched. Accordingly, the edges of regions 45b and 45c are slightly rounded. Thus, the edges of this regions con-fronting the region 45a' are not etched, thus preserving the ~ ' , . . ' interfaces between the regions at the time of ion implantation.
Regions 45b' and 45c' are used as the base electrode, or a com-bined electrode and wiring layer of a transistor as will be described later. The edges of the regions 45b" and 45c" facing the not doped region 45a' are convexed with a negative slope.
The spacing between these isolated regions is less than 1 micron.
Then, under a state shown in Fig. 4I heat oxide films 48a and 48b are formed on the entire surface to a thickness of 0.2 - 0.3 microns. Although the Si3N4 film 46a' is slightly oxidized, but its configuration does not change to any appreci-able extent. But the SiO2 films 48a and 48b are also formed uniformly on the side surfaces of the not-implanted region 45a' underlying the Si3N4 film 46a'. During the step of forming the heat oxide films 48a and 48b, the P type impurity or boron in the regions 45b' and 45c' adjoining the region 43 is heat-dif-fused into the P type region 43 to form P~t regions 43a and 43b in the regions 43 which act as base contact. This state is shown in Fig. 4J.
Unstable portions (not shown) of the oxide films 48-a and 48b are removed with hydrofluoric acid and then etched with phosphoric acid at a temperature of 160~C for 30 minutes to remove the Si3N4 film 46a'. This state is shown in Fig. 4K show-ing that the top 45a'top of the not-implanted region 45a' has ,... .
been exposed.
A N type impurity such as phosphoror arsenic is heat diffused into the top 45a'top of the not-implanted polycrystal-line silicon region 45a' by using the SiO2 films 48a and 48b as masks, under a diffusion conditions of 950C and 20 minutes (for arsenic). As a consequence, the impurity diffuses through region 45a' into the base region 43 to have a thickness of 0.1 - 0.2 microns and a surface concentration of above lx102 atoms/cm3 tbereby forming a N+ emitter region 50. The region 45a' is converted into a N type conductivity region 45a' by being diffused with the N type impurity, the region 45a' acting as an emitter electrode or a combined emitter electrode and a wiring layer. This state is shown in Fig. 4L.
- Then, a window 51 is formed through a proper portion of the oxide film 48a disposed on the region 45b' to be utilized as a base electrode or a combined base electrode and wiring layer. Then, metal ~for example, aluminum) wiring layers 53 and 54 are formed on the region 45b' and on the top of the region 45a' through the window 51 by using a predetermined mask, as shown in Fig. 4M. Thus, a transistor is obtained which utilizes the substrate 41 as the collector region, the region 43 as the base region, regions 43a and 43b as the base contact region, the region 50 as the emitter region, the regions 45b' and 45c' as the base electrode, and the region 45a' as the emitter electrode. ~lthough the collector electrode i8 not shown, it is formed by well known method on the lower surface of the substrate, or on the upper surface thereof like another electrodes.
In the bipolar transistor thus formed, as it is pos-sible to dispose regions 45b", 45a" and 45c" acting as elec-trodes with spacings of less than one micron it is possible to decrease the base electrode and to decrease the collector-base parasitic capacitance, than those of the prior art transistor.
Further, this construction increases the density of the wirings by a factor of 2 resulting in an ultra high speed, and lower power IC transistor having a power delay product of several tens fJ and a propagation delay time of about 100 ps/gate.
With this construction, it is also possible to make one cell of a static bipolar RAM to be less thatn 1000 square microns with a conventional light exposure technique (minimum dimension - 2 microns).
Since the construction of the element is simple and since the manufacturing steps are also simple, it has been found by experiment that the electric characteristics of the transistors do not vary greatly and the heat resistant property is also more stable than the prior art transisters.
Further, with this construction, since the emitter region takes the form of a mesa and is remotely situated from the P+ contact re~ion, it is possible to greatly increase the insulating strength between emitter and base electrodes. The semiconductor device manufactured by this method is substan-tially flat.
Figs. S~ and 5B show modifications of Figs. 4A - 4M
which correspond to that shown in Figs. 3A and 3B. More particularly, at the step shown in Fig. 4H, the polycrystalline -:
3~1~
- silicon region 45a not-implanted with ions is etched with KOH
at 60 - 63C for about two minutes. Then, as shown in Fig. 4I, the region 45a would not be etched until the P type region 43 becomes exposed but a thickness of about 1200 - 1500 A would remain as shown by a portion 45as" shown in Fig. 5.
Then, oxide films 61a and 61b having a thickness of 0.24 - 0.3 microns is formed on the entire surface of the substrate by heat oxidation method, as shown in Fig. 5B. The oxidation conditions are 800~C and about 600 minutes. Then, the region 45as" is also oxidized completely.
Consequently, regions 45b', 45c' are insulated and separated from the region 45a" with oxide films having extreme-ly small width on the surface of the substrate. 45b" and 45c"
show that their thickness is slightly smaller than that of the regions 45b' and 45c' because of longer oxidation time.
Fig. 6 shows a modification of this invention shown by FIgs. 4A - 4M. More particularly, under a state shown in Fig.
4I, when oxide films 48a and 48b are formed on the surface of a substrate as shown in Fig. 4J, these oxide films 48a and 48b would be formed at a portion at which the region 43 (forming the base region) is exposed. Consequently, the P type impurity near the interface between the substrate and the oxide films would be absorbed by the oxide films thus tending to produce a N channel at this portion. To prevent this difficulty, sub-se~uent to the stop shown in Fig. 4K, a P type impurity isimplanted at a dose of 1013 - 1014 atoms/cm2 such that the :
~x~
peak of the ions reaches the bottom of the oxide film as shown in Fig. 6. At this time, the P type impurity is also injected into the region 45a' but this does not cause any trouble because a high concentration N type impurity is diffused later into this region. Since the P type impurity injected into the oxide films 48a and 48b overlying the regions 45b' and 45c' is the same as the impurity contained in the regions 45b' and 45c' no problem occurs.
Following the step shown in Fig. 6, the step shown in Fig. 4K and the remaining steps are executed.
Figs. 7A and 7B show a modification of this invention shown in Figs. 4A - 4M, wherein the number of times of the ion implantation executed in the step shown in Fig. 4F is increased to two. At first, a P type impurity is implanted at a dose of SxlO15 atoms/cm2 and under an implantation energy of 40-kev such that the peak of the impurity reaches a relatively shallow depth, for example a depth of 1000 A, of the region 45 (in the case of a polycrystalline silicon having a thickness of 5000 A).
As a result of this ion implantation, P type regions 45bl and 45b2 are formed in region 45. Then, the P type im-purity is implanted at a dose of SxlO15 atoms/cm2 and an im-plantation energy of 120 kev such that the peak appears at a depth of about 4000 A from the surface, thus forming P type regions 45bll and 45b22 in the region 45.
The regions 45bll and 45b22 formed by the second ion implantation extend toward the not-implanted region 45a beyond ~. , , ~ . .
~1~9~
the regions 45bl and 45b2. Thus, the regions 45b and 45c formed by the regions 45bl, 45bll, 45b2 and 45b22 project into the not-implanted region 45a thus not only minimizing the thickness of the insulator to be formed subsequently between the regions 45b and 45c but also increasing the effective cross-sectional area of the regions 45b and 45c. Fig. 7B shows the insulated and separated state. As can be noted from Fig.
7B the edges of the regions 45b and 45c facing the region 45 sharply stand up from the substrate, then slowly stand up and the connect to the upper surface through steep slopes. Con--sequently, the edges are generally convexed form.
Fig. 8A - 8R show still another embodiment of the semiconductor device according to this invention.
As shown in Fig. 8A, at first a N type se~iconductor substrate 61 having a resistivity of 1 ohm-cm is prepared. On the main surface of this substrate is formed a non-doped poly-crystalline silicon layer 62 having a thickness of 0.2 micron by well known CVD process. Then a silicon nitride (Si3N4) film 63 having a thickness of 0.12 microns is formed on the poly-crystalline silicon layer 62 and then a silicon oxide film 64(SiO2) is formed thereon to a thickness of 0.6 microns. Dur-ing the step of forming the oxide film 64, the concentration of the impurity is graded in the direction of thickness so that the concentration of the P type impurity such as boron increases toward upper. The concentration gradient is such that the boron concentration is substantially zero near the Si3N4 film 63 but ' ' ,.~
reaches about 2% near the upper surface. Such concentration gradient is useful for shaping this portion into an inverted frustum in the succeeding steps.
Then a Si3N4 film having a thickness of about 0.1 micron is formed on the SiO2 film 64. This state is shown in Fig. 8B.
Then, the Si3N4 film is shaped into a desired pat-tern 65a by a well known selective etching technique, for example plasma etching technique. This state is shown in Fig. 8C. Then the SiO2 film 64 is etched by using the region 65a as a mask.
It should be noted that the impurity concentration of the SiO2 film 64 increases toward upper. Such difference in the impurity concentration can be realized by changing the etching speed of the SiO2 film 64 for a buffer etchant, that is a hydrofluoric type etching solution. In other words, the etching speed is higher by about 2 - 3 times at low impurity concentration portion than at high impurity concentration portion so that as shown in Fig. 8D, the Si~2 film would become an inverted frustum 64a.
The etching condition at this time is about 1200 seconds for hydrofluoric acid. The upper portion of the region 64a is etched to a point about 0.7 microns inwardly spaced from the edges of the Si3N4 film 65a whereas the lower surface is etched to a point about 1.2 microns inwardly spaced. This state is shown in Fig.
8D.
, ... .
Thereafter, boron ions are implanted into the entire surface of the substrate by using the Si3N4 film 65a as a mask under the conditions of 40 kev and a dose of higher than 1x1015 .' .
1~91~8 atoms/cm2. This state is shown in ~iq. 8E. As shown, the Si3N4 film 63 is divided into a not-implanted region 65a and ion-im-planted regions 65b and 65c by using the Si3N4 film 65a as the mask.
Then ion-implanted regions 63b, 63a and 63c are removed with a phosphoric acid etchant. The etching is made by utiliz-- ing the fact that the etching speed of the implanted Si3N4 film - is 3 - 4 times faster than that of the not-implanted region. The etching completed state is shown in Fig. 8F.
The exposed portions of regions~ 64a and 63a not-im-planted with ions are slightly etched by the phosphoric acid etchant and converted into the regions 64a' and 63a'.
Then, the surface of the substrate is heat-oxidized at a temperature of llOO~C for 40 minutes by using regions 64a' and 63a' as masks, thus forming oxide films 67a and 67b having a thickness of about 6 microns as shown in Fig. 8G. As a con-sequence of forming these oxide films, the polycrystalline silicon layer 62 is is converted into an island region 62a~
Then, exposed portions of the nitride film 63a' on the poly-crystalline silicon region 62a are removed with a phosphoric acid etchant by using the oxide films 67a and 67b as masks~
This state is shown in Fig. 8. The conditions at this time are 160C and 20 minutes.
Thereafter, a non-doped polycrystalline silicon layer 68 is uniformly formed on the entire surface of the substrate by CVD process to a thickness of 3000 - 4000 A. This state is .
llZ9~
shown in Fig. 8I.
Under this state, ions of borons are implanted at a does of more than lx1015 atoms/cm2 and with an energy of 40 -120 kev. The ion implantation is made in a direction perpen-dicular to the substrate so that portions not seen from abovewould not be implanted with ions. Accordingly, the polycrys-talline silicon layer 68 comprises ion-implanted regions 68a, 68b and 68c and not-implanted regions 68d and 68e. Since the base on which the polycrystalline silicon layer is deposited is an inverted frustum, the silicon layer are concealed by the edges of the region 68~. The ions of boron are also implanted into the portions 62al and 62a2 of the polycrystalline silicon region 62 positioned immediately beneath layer 68.
Then, under the state shown in Fig. 8J, the assembly is heat treated at 800~C for 15 - 20 minutes for recovering the damage of the layers 68a, 68b, 68cl, 62al and 62a caused by ion implantation.
Following the heat treatment, regions 68d, 68e, 62a3 and 62a4 are removed bt using an alkaline etchant, KOH for ex-ample. Regions 62a3 and 62a4 are in direct contact or spaced a little from not-implanted region 62, as shown in Fig. 8K. The polycrystalline silicon region 62a' remaining after removal of regions 62a3 and 62a4 has a mesa shape, and the length of its upper surface is slightly shorter than the length between opposite edges of Si3N4 film 63a" deposited thereon.
The portions of the regions (68a + 62al) and (68c +
~ .
i ~l 2~
62a2) facing the region 62a' is convex shape projecting from the substrate with negative slope.
Then, the oxide film 64a' is etched off with a phos-phoric acid etchant. At the same time, the doped polycrystal-line silicon region 68b deposited on the oxide film 64a' isalso removed. This state is shown in Fig. 8L.
Then the polycrystalline silicon regions (68a + 68al) and (68c + 62a) are etched by using a predetermined mask to form wiring layers and or electrodes 69a and 69b. This state is shown in Fig. 8M. Then, the substrate is heat oxidized to cover the polycrystalline silicon regions 68a and 69a, the exposed portion of the substrate, and the side surface of the polycrystalline silicon region 62a' with oxide films 70a and 70b, under a heat oxidizing condition of 800 C. The resulting films have a thickness of 2000 - 3000 A. As a result of this heat oxidation treatment, the impurity contained in the poly-crystalline silicon regions 69a and 69b adjacent the surface of the substrate 61 would diffuse into the substrate thus forming P+ diffused regions 71a and 71b contiguous to these regions 69a and 69b. The depth of diffusion is about 0.3 to 0.4 microns, and these P diffused regions are used as the base contact region as will be described later. Fig. 8N shows this 8tate. ~The oxide film formed directly on the substrate 61 somewhat penerates into the substrate.
Ions of boron are implanted into the upper surface of the substrate in a direction perpendicular thereto under condi-tions of does of 1013 - 1014 atoms/cm2 and an implantion energy of 60 - 90 kev. The resulting region 72 is contiguous with the P+
regions 71a and 72b to form a base region. This state is shown in Fig. 80. The nitride film 63a is then removed with a phos-phor acid containing etchant and the N type impurity is causedto diffuse into the non-doped region 62a' whereby a N+ region 73 acting as an emitter region is formed in the surface of the substrate 61 adjacent the base region 72. The both sides of this emitter region 73 are covered by the heat oxides 70a and 70b and formed as a mesa. This state is shown in Fig. 8Q.
Then a window 75 is formed at a suitable portion of the oxide film 70a on the polycrystalline silicon layer 69 acting as the base electrodes by using a well known photoetching technique, and such metal as aluminum is vapor deposited onto the window 75 and onto the top of the region 62a' by a well known mask technique to form wiring layers 77 and 78. This state is shown in Fig. 8R.
Fig. 9 shows a general construction of an integrated circuit (IC) incorporated with a transistor prepared by the steps shown in Figs. 8A - 8R. In Fig. 8, elements identical to or manifesting the same performances as those shown in Fig. 8R
are designated by the same reference charactors. The integrated circuit shown in Fig. 9 comprises a P type semiconductor layer 80 , ... .
which constitutes a substrate together with a N type semicon-ductor layer 61, a N type buried layer 81 interposed between both semiconductor layers 61 and 80 which are used as a collec-tor contact. As can be noted from Fig. 9, a portion thereof is extends to the surface of the substrate. The integrated circuit also comprises a collector electrode constituted by a polycrys-talline silicon layer 83 in contact with the collector contact 81 at the surface of the substrate. The region 83 is formed at the same time as the emitter electrode 62a' and diffused with an impurity. There are also provided with a wiring layer made of such metal as aluminum and formed on the collector electrode, and oxide films 85.
This construction provides ultra high speed elements having a propagation delay time o~ the order of 60 ps/gate.
Similar to the foregoing embodiments, this integrated circuit prepared by convential light exposure technique enables to reduce the cell area of a static bipolar RAM to less than 1000 square microns.
Where this construction is applied to an IC as it is possible to greatly decrease the area of an external base region it is possible to increase the fT of a reverse oper-ation transistor thus ensuring a high speed operation. When ~abricating the IC of the construction described above by form-ing printed regions of the transistor in the base region, on the configuration of the base pattern is determined succeeding steps are self-aligned so that all steps before forming the electrode can be executed without using any photomasks. For this reason, it is possible to completely eliminate all problems involving position alignment and high working accuracy which have been indispensable for all photoetching steps in the base region. This enables to manufacture extremely fine transistors.
Figs. lOA - lOC show various steps of manufacturing a junction type field effect transistor. To prepare this tran-sistor, succeeding to the step shown in Fig. 8N, without per-forming the ion implantation step shown in Fig. 80, the step is advanced to the step shown in Fig. lOA, and a region 63al is removed by etching with a phosphoric acid etching solution.
Then a P or N type impurity is diffused into the region 62a' so as to form a gate electrode region 90 in a region bounded by oxide films 70a and 70b on the semiconductor substrate 61. The region 62a" diffused with the impurity is used as a gate electrode or a wiring layer. This state is shown in Fig. lOB.
Then, similar to the step shown in Fig. 8R, metal wiring layers 91 and 92 are formed. This state is shown in Fig. lOC.
The advantages provided by this construction is identical to those of the previous embodiment.
Figs. llA and llB show a modified embodiment of this invention, in which succeeding to the process step shown in Fig. 8J, when removing regins 68d and 68e not-implanted with an impurity by etching, these regions would not be not etched until the surface of the substrate becomes exposed thus leaving regions lOOa and lOOb. The succeeding steps are similar to those shown in Figs. 8L and 8M. After completing the step 8M, ~gll8 a thermal oxide film 101 formed on the substrate. At this time, the not-implanted regions lOOa and lOOb are oxidized into oxide films which are shaped to slightly project into the sur-face of the substrate. This state is shown in Fig. llB which corresponds to Fig. 8N. The succeeding steps are similar to the steps shown in Figs. 80 - 8R.
It should be understood that the invention is not - limited to the specific embodiment described above and that various changes and modification will be obvious to one skilled in the art.
1'0~ Recent tendency in the development of IC semiconductor technique is concentrated how to increase the density of the integrated circuits, to improve the performance and to simplify the manufacturing steps. To attain these objects it has been proposed to variously change combinations of a polycrystalline semiconductor layer and a semiconductor substrate or such insu-lating films as SiO2 and Si3N4 films to be formed on the semi-conductor substrate. However, each of these combinations .is-not yet perfect and for long years it has been desired to develope semiconductor devices and methods of manufacturing the same capable of improving the density, and the performance and simplifying the manufacturing process.
To have better understanding of the invention, one ,:
'~
l~Z9~
prior art technique will be described hereunder. For example, let us consider a case wherein an insulating film of SiO2, for example, is formed on a silicon substrate, and a wiring layer comprising a polycrystalline silicon layer is formed on S the insulating film, or an electrode of a transistor is formed on the substrate. One prior art method comprises the steps of forming a polycrystalline silicon layer on the insulating film, depositing a photoresist on the polycrystalline silicon layer and then chemically etching off unnecessary portions of the polycrystalline silicon layer by using the photoresist. In the case of a polycrystalline silicon doped with boron at a density of about 1021 atoms/cm3, an etchant consisting of HF:HNO3:H2O
= 1:20:20 is suitable. With this method, however, the spacing between adjacent wiring layers or electrodes and the substrate J
is determined by a minimum gap that permits formation of a photoresist pattern. This minimum gap is generally of the order of 3 microns. For this reason, when a transistor is pre-pared with this method not only the base resistance is rela-tively large, but also the parasitic collector-base capacitance i8 also large. Where the polycrystalline silicon layer is worked with only chemical etching, the portions of the poly-crystalline silicon layer underlying the photoresist and which - should be retained to form an wiring layer or an electrode would be etched off ~side etching) with the result that the spacing between adjacent wiring layers would become larger than expected. Moreover, due to the effect of the side etching, the l~Z~118 cross-sectional configuration becomes a mesa which has a smaller area than expected, thus limiting the current capacity of the wiring layer.
According to another prior art method, the polycrystal-line silicon layer the oxide film is etched off with plasma by using a photoresist pattern disposed on the polycrystalline silicon layer as disclosed in J. Electrochem. Soc.: "Solid-State Sience and Technologyn, May 1978, Vol. 125 No. 5, page 827 - 828 with this method, the polycrystalline silicon layer would be worked to have a desired mask configuration, that is to cause the cross-sectional configuration of the wiring pattern to have a rectangular configuration as determined by the photoresist pattern. Similar to the chemical etching, the spacing to the adjacent wiring layer, however, is determined by the working accuracy of the photoresist so that the minimum gap is of the order of about 3 microns. Moreover, as the edges of the wiring layer are sharp, there is a fear of breaking the layer or wires by such sharp edges. The base resistance and the collector-~ase parasitic capacitance are also high as in the case of the chemical etching.
Still another prior art method comprises the steps of orming a layer of a material having a lower oxidizing speed than polycrystalline silicon, for example Si3N4, and having a pre-determined pattern on a polycrystalline silicon layer on an oxide ilm, selectively heat-oxidizing the polycrystalline silicon layer so as to form an isolated region of the polycrystalline silicon ` `` 1~2~
layer, that is a wiring layer or an electrode. This method is disclosed in U.S. Patent No. 4,074,304, issued February 14, 1978 to Shiba for instance. However, this method presents the same problem as firstly described method.
According to yet another prior art method an insulating film is selectively formed on a polycrystalline silicon layer formed on an oxide film, and such impurity as boron is diffused into a portion of the polycrystalline silicon layer not covered by the insulating film. The insulating film formed on the polycrystalline silicon layer is selectively removed and thereafter the portion of the polycrystalline silicon not containing the impurity by using the difference in the etching speed between the portions containing and not containing the impurity when a KOH type etchant is used. This method is disclosed, for example, in British Patent No. 1,417,170, published December 10, 1975 in the name of Mullard Ltd.
According to this method, since the impurity selectively heat-diffuse into the portion of the poly-crystalline silicon layer under a selectively arranged insulating film, it is possible to form a wiring layer diffused with the impurity at a closer position (for example -with a spacing of less than 2 microns) than those formed by various methods aforementioned. Moreover, the wiring layer would have overhang edges which project toward adjacent wiring layers. Consequently, although the cross-sectional area of the wiring layer becomes larger but the sharp edges damage an insulating layer or a wiring layer formed thereon.
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Where a transistor is prepared according to one of many well known methods, it is necessary to use at least four photoetching steps for forming a base diffusion opening, an emitter diffusion window, a base electrode lead window and an electrode forming window and it is necessary to use various photomask patterns for defining the contour of respecti~e performance regions. For this reason, in order to produce a high density and high performance transistor, it is necessary to align the respective photoetching positions and to work at 10- a high degree of accuracy. This decreases the yield, making it difficult to obtain extremely fine transistors.
To solve these problems we have already proposed a method as disclosed in applicant's Canadian Patent NoO
1,093,703, issued January 13, 1981.
In a transistor disclosed therein, a base electrode comprising a polycrystalline layer having a constant width is disposed adjacent a boundary and around the entire periphery of a base region surface formed on a semiconductor substrate and having a base contact about the periphery, an emitter electrode comprising polycrystalline silicon is formed on the surface of an island-shaped emitter region formed in the baqe region, and the base and emitter electrodes are electrically isolated by an insulating film.
With this construction, however, when forming the emitter electrode wherein a polycrystalline silicon layer is provided beneath the emitter electrode for the purpose of stabilizing the electrode for a thin emitter junction, the mb/J - 5 -.
polycrystalline silicon layer is required to completely cover the emitter region so that it is necessary to increase the peripheral dimension of the emitter region by taking into consideration a position aligning allowance. This hinders manufacture of extremely fine transistors. Further, with this construction, it is necessary to determine the position of the emitter-base junction at a portion which is in contact with the insulating film of a small width and serves to isolate the base electrode from the emitter electrode so that the position of the side junction of the emitter electrode is determined ac-cording to the relationship between the depth of the base con-tact region and the emitter depth. This determines the insu-lating strength between the emitter and base electrodes and since the breakdown voltage is determined by controlling the lateral dispersion, the electrical characteristics of the resulting transistors are not always uniform. With this con-struction, the side wall of the emitter electrodes comprise a p-n junction between regions each having a high impurity concentration, thus increasing the parasitic capacitance and decreasing fT. Moreover, according to this construction, the -emitter electrode is formed as a fourth layer with respect to the substrate thus complicating the manufacturing steps of such multilaver construction and rendering it impossible to obtain high density integrated circuits.
SummarY of the Invention Accordingly, it is the principal object of this inven-., - , ~ ' ' , tion to provide a semiconductor device provided with a conduc-tive layer having at least a predetermined sectional area and capable of providing multilayer wirings and a method of such semiconductor device.
Another object of this invention is to provide a semiconductor device and a method of manufacturing the same capable of providing high speed transistors having uniform electric characteristics.
Still another object of this invention is to provide an improved semiconductor device and a method of manufacturing the same which uniquely utilizes self-aligning technique and can minimize use of highly accurate photomasks.
Yet another object of this invention is to provide a semiconductor device and a method of manufacturing the same capable of manufacturing extremely fine transistors without the problems of position alignment and working accuracy when photo-etching the base regions.
A further object of this invention is to obtain a semiconductor device which is made flat thereby increasing the density of the integrated circuits, and a method of manufactur-ing such semiconductor device.
Still further object of this invention is to provide an improved semiconductor device and a method of manufacturing the same which can increase the density of the integrated circuits thereby decreasing the parasitic capacitance and the resistivity of the elements thus increasing the operating speed ~l~g~8 and decreasing power consumption.
According to one aspect of this invention, there is provided a bipolar transistor of the type comprising a semiconductor substrate of a first conductivity type and acting as a collector region; an island shaped base region of a second .
.
~ mb/~L - 8 -conductivity type formed on the surface of the semiconductor substrate and surrounded by a first insulating film; a first conductivity type emitter region formed in the base region; a doped polycrystalline silicon region of the first conductivity type, the doped polycrystalline silicon region being in the form of a mesa adjacent the emitter region and acting as an emitter electrode, a second conductivity type base contact in contact with the periphery of the base region; and a doped polycrystalline silicon region of the second conductivity type contiguous with the base contact and extending in the direction of the first insulating film, the doped polycrystalline silicon region of the second conductivity type acting as a base elec-trode, wherein the doped polycrystalline silicon region of the second conductivity type takes the form of a projection, one side surface of the projection adjacent the doped polycrystal-line silicon region of the first conductivity type having a negative coefficient of gradient between a portion of the pro-jection at or near the projection and the upper end of the pro~ection, and wherein the bipolar transistor furtber co~-prising a second insulatinq covering substantially the entire surface of the substrate, and a wiring layer interconnecting the respective doped polycrystalline silicon regions and the other elements.
According to another embodiment of this invention, there is provided a junction type field effect transistor of the type comprising a semiconductor type substrate of a first 3~8 conductivity type; a first insulating film forming an island shaped region on one surface of the semiconductor substrate;
second and drain regions of a second conductivity type formed on a portion of the semiconductor substrate adjacent the first insulating film defining the island shaped region; a doped polycrystalline silicon region of a second conductivity type extending from the source and drain regions onto the first insulating film and acting as source and drain electrodes respectively; a region of the second conductivity type formed in the island shaped region of the semiconductor substrate; a mesa shaped doped polycrystalline.silicon region of the second conductivity type formed on the gate region and acting as a gate electrode; a second insulating film covering substantially the entire surface of the substrate; and a wiring layer inter-lS connecting respective doped polycrystalline silicon regions and the other elements, wherein the doped polycrystalline region utilized as the source and drain electrodes takes the form of a projection, one side surface of the projection adjacent the doped polycrystalline silicon region utilized as the gate ele.c-trode having a generally negative coefficient of gradient bet-ween a portion of the projection at or near the substrate and the top ofsaid projection.
According to another aspect of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of forming a polycrystalline semiconductor layer on a substrate; sequentially forming first and second ~' ~
insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed portion of the polycrystalline semi-conductor layer by using remaining portion of the first and second insulating film as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor later not-implanted with the ions; etching the exposed portion of the polycrystalline semi-conductor layer not-implanted with the ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of the projection at or near the substrate -~
and the upper end of the projection; and covering the surface of the substrate with an insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and~econd insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ion of an impurity; implanting ions of the impurity into the exposed portion of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; etching the exposed portion of the polycrystalline semi-conductor layer not-implanted with the ions the form a projec-tion having side surfaces having a negative coefficient of gradient between a portion of said projection at or near the substrate and the upper end of the projection; and covering the surface of the substrate with an insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed surface of the polycrystalline semi-conductor layer by using remaining portions of the first and second insulating films as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with the ions; removing the second insulating film; etching the exposed portion of the polycrystalline semiconductor layer not-implanted with the ions for insulating and æeparating each other the ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with the ions, thus forming a projection on the ion-implanted polycrys-talline semiconductor layer, the projection having a sidesurface having a negative coefficient of gradient between a portion on the projection at or near the substrate and the upper end of the projection, and providing for the polycrystal-line semiconductor layer a concave side edge having a positive coefficient gradient between a portion at or near the substrate and one end of the concave side edge; covering one surface of the substrate with a fourth insulating film; removing the first insulating film overlying the portion of the polycrystalline semiconductor layer not-implanted witb the ions; doping an impurity into a portion of the polycrystalline semiconductor region not-implanted with the ions; and covering the surface of the substrate with a fifth insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor.
device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor later; etching the second insulating film in accordance with a predetermined mask pattern;
etching the first insulating film by using remaining portion of the second insulating film as a mask; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ions of an impurity; implanting the ions of the impurity into an exposed surface of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; removing the second insulating film; etching the exposed portion of the polycrystalline semiconductor layer not-implanted with the ions for insulating and separating each other the ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with the ions, thus forming a projection on the ion-implanted poly-crystalline semiconductor, the projection having a side surface having a negative coefficient of gradient between a portion on the projection at or near the substrate and the upper end of the projection, and providing for the polycrystalline semicon-ductor layer a concave side edge having a positive coefficient of gradient between a portion at or near the substrate and one end of the concave side edge; covering one surface of the substrate with a fourth insulating film; removing the first insulating film overlying the portion of the polycrystalline semiconductor layer not-implanted with the ions; doping an impurity into a portion of polycrystalline semiconductor layer not-implanted with the ions; and covering the surface of sub-strate with a fifth insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor , device comprising the steps of; forming a polycrystalline semiconductor layer on a substrate; sequentially forming first and second insulating films having different etching character-istics on the polycrystalline semiconductor layer; etching the second insulating film according to a predetermined mask pat-tern; etching the first insulating film by using a remaining portion of the second insulating film as a mask; implanting ions of an impurity into an exposed portion of the polycrystal-line semiconductor layer by using remaining portions of the first and second insulating films as masks; side etching the remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with the ions; etching the exposed portion of the polycrystal-line semiconductor layer not-implanted with the ions thus sepa-rating an ion-implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with the ions and having a relatively thickness; heat oxidizing the substrate so as to oxidize the relatively thin not-implanted polycrystalline semiconductor region to insulate and separate-the same from the ion-implanted polycrystalline semiconductor region, thus providing for the insulated and separated polycry-.
stalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of ....
the projection at or near the substrate and one end of the pro-jection, and providing for the insulated and separated poly-crystalline semiconductor region a mesa having a positive coef-ficient of gradient at or near the substrate; removing the insulating film covering the polycrystalline semiconductor region not-implanted with the ions; doping an impurity into the polycrystalline semiconductor region not-doped with the ions;
and covering the substrate surface with a third insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a semiconductor device comprising the steps of; forming a polycrystalline semi-conductor layer on a substrate; sequentially forming first and second insulating films having different etching characteristics on the polycrystalline semiconductor layer; etching the second insulating film according to a predetermined mask pattern;
etching the first insulating film by using a remaining portion of the second insulating film as a mask; side etching the :~
remaining portion of the first insulating film for exposing a portion of the polycrystalline semiconductor layer not-implanted with ions of an impurity implanting the ions of the impurity into an exposed portion of the polycrystalline semiconductor layer by using remaining portions of the first and second insulating films as masks; etching the exposed of the polycrystalline semiconductor layer not-implanted with the ions thus separating.
an ion-implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with the ions and having a relatively thin thickness; heat-oxidizing the substrate surface so as to oxidize the relatively thin not-im-planted polycrystalline semiconductor region to insulate and ~91~8 separate the same from the in implanted polycrystalline semi-conductor region, thus providing for the insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of the projection at or near the substrate and one end of the projection, and providing for the insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near the substrate; removing the insulating film covering the polycrystalline semiconductor region not-implanted with the ions; doping an impurity into the polycrystalline semiconductor region not-doped with the ions;
and covering the substrate surface with a third insulating film.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into the substrate and for simulta-neously forming a base diffusion window surrounded by the region; forming a base region having a second conductivity type through the window; forming a polycrystalline silicon layer-, and second and third insulating layers having different etching characteristics on the substrate; selectively etching the third insulating layer to form a third insulation region on the base regio~`and near the central portion thereof; etching the second insulating layer to form a second insulating region by using the third insulating region as a mask; implanting ions of an impurity having the same conductivity type as the base region into the polycrystalline silicon layer by utilizing the second and third insulating regions as masks, thereby separating the same into a region implanted with the ions and a region not-im-planted with the ions; side etching the second insulating region for exposing the polycrystalline silicon region not-implanted with the ions; etching the region not-implanted with the ions for insulating and separating the regions implanted and not-im-planted with the ions; forming a heat oxide film on the surface of the substrate and at the same time diffusing an impurity in the in implanted region contiguous to the base region into the same for forming a base contact; removing the insulating film for exposing the polycrystalline silicon region not-implanted with the ions; diffusing an impurity of the first conductivity l lS type into the exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in the base region of the semiconductor substrate; and forming wiring layers ; in the ion-implanted region and in the regions diffused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first in-sulator region extending into the substrate and for simultane-ously forming a base diffusion window surrounded by the region;
forming a base region having a second conductivity type through ~L~2~
the window; forming a polycrystalline silicon layer, and second and third insulator layers having different etching character-istics on the substrate; selectively etching the third insulat-ing layer to form a third insulating region on the base regin and near the central portion thereof; etching the second insu-lating layer to form a second insulating regin by using the third insulating ~egion as a mask; side etching the second insulating region for exposing the polycrystalline silicon region not-implanted with ions of an impurity having the same conductivity type as the base region; implanting the ions into the polycrystalline sili~on layer by utilizing the second and third insulating regions as masks thereby separating the same into a regin implanted with the ions and a region not-implanted with the ions; etching the region not-implanted with the ions for insulating and separating the regions implanted and not-implanted with the ions; forming a heat oxide film on the surface of the substrate and at the same time diffusing an impurity in the ion-implanted region into the same for forming a baæe contact; removing the insulating film for exposing the polycrystalline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type into the, exposed polycrystalline silicon region for forming an emitter region,of the.first conductivity type in the base region of the semiconductor substrate; and forming wiring layers in the ion-implanted region and in the regins diffused with the impurityof the first conductivity type.
,.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; successively forming aon a semiconduc-tor substrate of a first conductivity type a first polycrystal-line silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic and a third insulating film having a third etching characteristic, the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selectively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third in-sulating film as a mask, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the second and first insulating films by using the remaining portion of the third insulating film; removing portions of the second and first insulating films implanted with the ions; heating a first polycrystalline silicon layer about the first insulating region not-implanted with the ions of the first insulating film to heat-oxidize the first poly-crystalline silicon layer to the surface of the substrate by using the remaining first insulating region as a mask thereby forming a base region window; forming a non-doped second polycrystalline silicon over the entire surface of the sub-strate; implanting ions of an impurity of the first conductivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrystalline sili-. - .,~
con layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions; etching the exposed and not-implanted region for forming an island shaped polycrystalline silicon region having a top portion projecting _ into the first insulating region, the island shaped polycrys-talline silicon region being insulated and separated from the polycrystalline silicon region implanted with the ions; removing the second insulating region; etching the region implanted with the ions to change the same to have a predetermined shape;
heating the substrate to form a heat oxide film on the surface of the substrate and at the same time to cause the impurity in the polycrystalline silicon region implanted with the ions and in contact with the substrate to diffuse thereinto for forming a base contact of the first conductivity type; implanting ions, . of an impurity of the first conductivity type into a regin on the surface of the substrate connected to the base contact thus forming a ~ase region; removing the first insulating film on the polycrystalline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type in the polycrys,talline silicon region not-implanted with the ions for forming an emitter region of a second conductivity type in the polycrystalline silicon region not-implanted with the ions; and forming wiring layers for the region implanted with the ions and for the polycrystalline silicon region diffused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a junction type field effect transistor comprising the steps of; successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insu-lating film having the first etching characteristic. the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selectively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third insu-lating film, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the third and first insulating films by using the remaining portion of the third insulating film; removing portion of the third and first insulating films implanted with the ions; heating a first polycrystalline silicon layer about the first insulating region not-implanted with the ions of the first insulating film to heat-oxidize the first polycrystalline silicon layer up to the surface of the substrate by using the remaining first insulating region as a mask; orming a non-doped second polycrystalline silicon layer over the entire surface of the substrate; im-planting ions of an impurity of the first conductivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrystalline silicon layers into first and second regions implanted with the ions, and a region partially exposed and not-implanted with the ions;
etching the exposed and not-implanted region or forming an island shaped irst polycrystalline silicon region having a portion projecting into the first insulating region, the island shaped polycrystalline silicon region being insulated and separated from the polycrystalline silicon region implanted with the ions; removing the second insulating region; etching lS the region implanted with the ions to change the same to have a predetermined shape; heating the substrate to form a heat oxide film on the surface of the substrate and at the same time to . cause the impurity in the polycrystalline silicon region im-planted with ion and in contact with the substrate to dif~use thereinto for forming a base contact of the first conductivity type; implanting ions of the first conductivity type into a region on the surface of the substrate connected to the base contact thus forming a base region; removing the first insulat-ing film on the polycrystalline cilicon region not-implanted with the ions; diffusing an impurity of the first conductivity type in the polycrystalline silicon region not-implanted with -., ~ , . ...;
the ions for forming a gate region on the surface of the substrate; and forming wiring layers for the region implanted with the ions and for the polycrystalline silicon region dif-fused with the impurity of the first conductivity type.
According to another embodiment of this invention, there is provided a method of manufacturing a bipolar transistor comprising the steps of; successively forming, on a semiconduc-tor substrate of a first conductivity type, a first polycrys-talline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insulating film having the first etching characteristic, the second insulating film having an impurity concentration which increases from a portion thereof in contact with the first insulating film toward upper; selec-tively etching the third insulating film in accordance with a predetermined pattern; etching the second insulating film, by using remaining portion of the third insulating film as a mask, to a point inwardly spaced from an edge of the third insulating film to form a second insulating region of an inverted frustum shape; implanting ions of an impurity into the third and first insulating films by using the remaining portion of the third insulating film; removing portions of the third and first insu-lating films implanted with the ions; heating a first polycrys-talline silicon layer about the first insulating region not-.
implanted with the ions of the first insulating film to heat-oxidize the first polycrystalline silicon layer up to the surface ~g~
of the substrate by using the remaining first insulating region thereby forming a base region window; forming a non-doped second polycrystalline silicon layer over the entire surface of the substrate; implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layerdeposited on the inverted frustum shaped second insulating region as a mask for converting the first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions;
etching the exposed and not-implanted region for forming an ion-implanted polycrystalline silicon`region and a relatively thin polycrystalline silicon region implanted with the ions, and disposed adjacent to the ion-implanted polycrystalline silicon region; oxidizing the relatively thin polyarystalline silicon region not-implanted with the ions to insulate and separate the ion-implanted and not-implanted polycrystalline silicon regions, the insulated and separated polycrystalline silicon region implanted with the ions having an edge projecting from a portion at or near the substrate, the polycrystalline silicon region not-implanted with the ions being in the form of a mesa having edges of a positive coefficient of gradient bet-ween a portion thereof at or near the substrate and the top of the mesa, the oxidation step causing an impurity in the ion-im-planted region to diffuse into the substrate to form a base contact of the first conductivity type; forming a base region by implanting ions of an impurity of the first conductivity .
type into a region on the substrate surface connected to the base region; removing the first insulating film on the poly-crystalline silicon region not-implanted with the ions; dif-fusing an impurity of the first conductivity type into the polycrystalline region not-implanted with the ions so as to form an emitter region of the second conductivity type in the base region in the substrate surface; and forming wiring layers for the polycrystalline silicon region implanted with the ions and for the polycrystalline silic~on region diffused with the impurity of the first conductivity type.
Brief Description Drawings In the accompanying drawings:
Fig. 1 is a sectional view showing the basic construc-tion of a semiconductor device embodying the invention.
Figs. 2A through 2K are sectional views showing suc-cessive steps of manufacturing the semiconductor device shown in Fig. 1 in accordance with one embodiment of the method of this invention;
Figs. 3A and 3B show modified steps shown in Fig. 2;
Figs. 4A through 4M are sectional views showing suc-cessive steps of manufacturing a bipolar transistor according to the method of this invention;
Figs. 5A and 5B show modified steps shown in Fig. 4 ~ Fig. 6 is a sectional view showing a modification of a steps shown in Fig. 4;
Figs. 7A and 7B are sectional views showing modifica-tions of the steps shown in Fig. 4;
Figs. 8A through 8F are sectional views showing another embodiment of the method of manufacturing a bipolar transistor according to this invention;
Fig. 9 is a sectional view showing the entire con-struction of a bipolar transistor prepared by the method shown in Figs. 8A through 8R;
Figs. lOA through lOC are sectional views showing modified steps where the method of this invention shown in Figs. 8A through 8R is applied to the manufacture of a junction transistor; and Figs. llA and llB show modified steps of the method shown in Figs. 8A through 8R.
DescriPtion of the Preferred Bmbodiments J
The semiconductor device shown in Fig. 1 comprises a silicon semiconductor substrate 11, a heat oxide film (SiO2) 12 having a thickness of about 0.6 micron and formed on the substrate 11 and polycrystalline silicon layers 13, 14 and 15 doped with boron and overlying the SiO2 film. The surfaces of the polycrystalline silicon layers 13, 14 and 15 and the exposed surface of the substrate are covered by an oxide film 16.
It is particularly to be noted that the opposite edges 14a and l4b of the polycrystalline silicon layer 14 are gradu-ally curved and that these edges are interconnected by a flat central portion 14c. The right hand polycrystalline silicon ~9~18 layer 15 has a similar edge construction whereas the left hand polycrystalline silicon layer 13 has a conventional mesa type edge construction.
With such convex edge construction it is possible to ~ake larger the current capacity than that of the mesa type construction when the polycrystalline silicon layer 14 is used as a wiring layer or a diffused layer. More particularly, with the edge construction of this invention, the sectional area of the edge is increased 200% than that of the mesa type edge construction.
In addition to the aforementioned increase in the current capacity, the edge construction of the current capacity, the edge construction of this invention can reduce the longi-tudinal dimension of respective polycrystalline layers than that of the mesa type edge construction without charging the other dimensions, with the result that it is possible to in-crease the density of component elements or integrated circuits formed on a substrate.
Figs. 2A through 2K show successive steps of manufa~-turing the semiconductor device shown in Fig. 1. At first, a Nor P type silicon substrate 20 shown in Fig. 2A is prepared an~
a heat oxide film 21(SiO2) having a thickness of 0.6 micron is formed on the substrate. Then, a not-doped polycrystalline silicon layer 22 is formed on the SiO2 film 21 by CVD tech-nique, for instance, to have a thickness of 0.4 - 0.5 micron.
Then, a Si3N4 film 24 having a thickness of 0.12 micron is form-~%9~
ed on the polycrystalline silicon layer 22 and then a SiO2 film 25 having a thickness of about 0~5 - 0.6 micron is formed on the Si3N4 film 24. This state is shown by Fig. 2B.
Then after coating a well known photoresist (not shown) on the silicon oxide film 25, the photoresist is exposed to light through a photomask and then etched. Then the SiO2 film 25 is etched with an etching solution containing hydrofluoric acid by using the remaining photoresist as a mask. Thereafter, the Si3N4 film 24 is etched with hot phosphoric acid. The etch-ing of the SiO2 film may be dry etching. This state is shownin Fig. 2C in which 25a - 25c and 24a - 24c show SiO2 regions and Si3N4 regions respectively remaining after the etching step.
The edges of these regions are substantially vertical.
Then, boron is injected into the entire surface of the l substrate by ion implantation technique to a dose af about lx1015 - 1016 atoms/cm2. The ion implantation may be made once or more times under an implantation energy of 20 - 150 kev, with the result that boron of the described dose distributes about a plane at a depth of about 0.2 - 0.4 micron. The boron ions implanted into the polycrystalline silicon collide against the polycrystalline silicon so that the ion-implanted regions 22a, 22b, and 22c and 22d in the polycrystalline silicon layer 22 are contiguous with not-implanted regions 22c, 22f and 229.
,... .
Of course, the interfaces between ion-implanted regions 22a -22d and not-implanted regions 22e - 22g are defined by the edges of the Si3N4 film which has been used as a mask at the time of ion implantation.
Following the ion implantation, the assembly is heat trreated at a temperature of 800C for 15 - 20 minutes to recover crystal damage caused by the ion implantation. In this manner, ion-implanted regions or electroconductive regions 22a - 22d are formed.
Then, portions of the Si3N4 films 24a - 24c at about 0.2 - 0.3 micron from the edges are etched off with hot phos-phoric acid. This state is shown in Fig. 2E. As can be noted from Fig. 2E, portions of the polycrystalline silicon regions 22e - 22g not-implanted with ions and covered by Si3N4 films 24a - 24c are exposed.
Then the SiO2 regions 25a - 25c are removed by using hydrofluoric type etching solution. This state is shown in Fig. 2F. Then, etching is made with potassium hydroxide (KOH) at a temperature of 60C - 63C for 3 to 4 minutes. The etchin~
speed at this time of the not-implanted regions 22e - 22g is higher by one order of magnitude than that of the implanted regions 22a - 22d. Accordingly, when etched under the condi-tions described above, the sides of the not-implanted regions 22e - 22g are etched by 0.4 - 0.5 microns whereas the implanted regions are etched by about 460 - 500 A which is smaller about one order of magnitude than that of the not-implanted regions.
Con5equently, the shape of the regions 22e - 22g is converted into frustum or mesa type regions 22e' - 22g' having side sur-faces inclined upwardly with their tops separated inwardly from :' ;; ' , the edges of the Si3N4 films 24a' - 24c' by about 0.4 - 0.5 mi-crons, whereas the regions 22a - 22d are converted to have a configuration as shown by 22e' - 229' in which the edges are slightly rounded because their surfaces are etched at a definite rate and at a uniform speed. This state is shown in Fig. 2G.
Thus, the edges of the regions 22a' - 22d' are convexed starting from the insulating film 21 or a portion close thereto.
Thereafter heat oxide films 27a - 27d are formed on the entire surface to a thickness of 0.2 - 0.3 microns, under a state shown in Fig. 2F. Since the Si3N4 films 24a' - 24c' are difficult to oxidize, they are oxidized only slightly so that their shape does not change in any appreciable extent. However, side surfaces of the regions 22e' - 22g' not-implanted with ions and located at recessed portions underlying these Si3N4 films 24a' - 24c' are also formed with SiO2 films 27a - 27d having a uniform thickness as shown in Fig. 2H.
Then the oxide films on the surface of the Si3N4 films 24a' - 24c' are removed by etching with dilute hydrofluoric acid for about 10 seconds for example, and then the Si3N4 films 24a' - 24c' are removed by etching with phosphoric acid at 160 C
for 30 minutes. This state is shown in Fig. 2I. As shown, the top surfaces 22e'top - 22g'top of the not-implanted regions 22e' ~229' are exposed.
Then, such impurity as phosphor, arsenic and boron is injected into the regions 22e' - 229' by ion implantation or heat diffusion technique through the top surfaces 22e'top -, ~lZ~
22g'top of the regions 22e' - 22g' by using SiO2 films 27a -27d as masks thus converting these regions into electroconduc-tive regions 28a - 28c as shown in Fig. 2J.
Finally, a heat oxide film 29 is deposited over the entire surface as shown in Fig. 2K. The resulting regions 22a' - 22d' and 28a - 28c can be used as wiring layers, electrodes or resistance layers which are formed very closely, for example with a spacing of about 0.5 - l micron.
When respective layers are formed as above described, in addition to the forementioned advantages in the construction, the following advantages result.
More particularly, in the step of manufacturing the resistance or wiring layer, the photomask is used anly once, and since adjacent regions are formed by using the edges of the insulating mask layer which has already been formed with the photomask, thus providing self-aligning. This substantially decreases the number of steps. Although the edges of a photo-resist pattern are used, the spacing between adjacent regions is determined by the thickness of the polycrystalline silicon layer constituting such regions and by the etching time of this layer, especially the portions thereof not-implanted with ions.
Accordingly, it is possible to separate and insulate adjacen~t regions with small gaps of the order of less than l micron. This is different greatly from the prior art in which the spacing between adjacent regions is determined by a mask pattern. Thus, when the method of this invention is applied to ~2,~
the manufacture of wirings, it is possible to increase the density of the wirings by a factor of 2 or more. Moreover, the spacing between adjacent regions is not influenced by the work-ing accuracy of the photoetching step.
As shown in Fig. 2H, with the method described above, the insulating films Si3N4 overlying the regions not-impart-ed with ions and the insulating film (SiO2) overlying another portions have different etching characteristics so that in order to diffuse an impurity into the regions not-implanted with ions, it is only necessary to etch off the insulating films overlying the regions not-implanted with ions and diffusion can be effect-ed by using the other insulating f ilms as masks.
Figs. 3A and 3B show modifications of certain steps shown in Figs. 2A - 2K. Thus, Fig. 3A corresponds to Fig. 2G.
Thus, when etching the polycrystalline silicon regions 22e -22g not-implanted with ions in the step shown in Fig. 2F, KOH
is used for etching conditions of 60 - 63VC and 2 minutes.
Then, portions 22esn - 22gs" adjacent regions 22a" - 22d" which were obtained from regions 22e" - 22g" by etching are not removed completely to expose the oxide films as shown in Fig.
2G, but these portions 22es" - 22gs" are retained with a thick-ness of about 1200 - 1500 A.
Then oxide films 31a - 31d having a thickness of ahout 0.24 - 0.3 microns are formed on the entire surface of the substrate by heat oxidation process. Then, the exposed surfaces of respective regions are oxidized. Although the thickness of ~g~
the portion of respective regions which are converted into oxide films is different depending upon the temperature and time, where oxidation conditions 800C and 6~0 minutes are used, regions 22es" - 22gs" are completely oxidized to assume a state as shown in Fig. 3B. With this modified method, it is also possible to isolate regions 22a' - 22c' and regions 22e' - 22g' with insu-lating films having a small thickness in the same manner as - shown in Fig. 2H.
Figs. 4A - 4M show still another modification of the method of this invention applied for the fabrication of a bi-polar transistor.
At first, as shown in Fig. 4A, a N type silicon semi-conductor substrate 41 having a resistivity of 1 ohm-entimeter is prepared. Then, heat oxide films 42a and 42b are formed on the surface of the substrate with well known photomask tech-nique, except a portion 41a thereof which is used as a window for forming the base electrode of the transistor as will be described hereinafter. This state is shown in Fig. 4B.
Then, a P type impurity ions are diffused or injected into the substrate 41 to a thickness of 0.2 - 0.3 microns through window 41a of the oxide films 42a and 42b to form a base region 43 as shown in Fig. 4C. The resulting impurity concentration at the surface of the base region 43 is about 1-5x1018 atoms/cm3.
Then, by using CVD process, for example, a non-doped polycrystalline silicon layer 45 is formed on the entire sur-llZg~
~ace of the substrate to a thickness of 0.4 - 0.5 microns.
Then, on this polycrystalline silicon layer 45 is formed a Si3N4 film 46 baving a thickness of about 0.12 microns, and thereafter an oxide film 47 having a thickness of about 0.5 -0.6 microns is formed on the nitride film 46 as shown in Fig.
4D.
Aftee coating a well known photoresist (not shown) on - the oxide film 47, a photomask is used to expose to light the photoresist and then etch the same. Then SiO2 film 47 is etched with a hydrofluoric acid etchant by using the remaining photoresist followed by the etching step of the Si3N4 with hot phosphoric acid. Thereafter, the photoresist which has been used as a mask is removed. This state is shown in Fig. 4E, in which the SiO2 region and the Si3N4 region remaining after the etching step are designated by 47a and 46a respectively.
The edges of these regions are used for isolating the regions to be described later.
Then, as shown in Fig. 4F, ions of boron is implanted into the entire surface of the substrate to a dose of lx1015 -1x1016 atoms/cm2. Such implantation may be made once or more time, and energy of ion implantation ranges from 40 kev to 120 kev thus distributing the ions of boron about a plane at a depth of 0.1 - 0.4 microns. In the same manner as in the foregoing embodiments, the boron ions implanted into the polycrystalline silicon collide with silicon crystals so that the ion-implanted regions 45b and 45c gradually change to not-implanted regions 45a. After the ion-implantation, the assembly is heat-treated at 800C for 15 - 20 minutes, for example, thus recovering the damage of the crystals of the polycrystalline silicon caused by the ion implantation.
Portions of the Si3N4 film 46a between its edges and points spaced 0.2 to 0.3 microns therefrom are etched off with hot phosphoric said, as shown in Fig. 4G. This etching step exposed a portion of the polycrystalline silicon region 45a not-implanted with ions.
At a state shown in Fig. 4H, the assembly is etched with an alkaline etchant, for example KOH, at a temperature of 60 - 63 C for 3 minutes. With KOH, the etching speed of the not-implanted region 45a is faster by about one order of mag-nitude than that of the implanted regions 45b and 45c. Con-sequently, when etched under the conditions described above, the not-implanted region 45a is side etched by 0.4 - 0.5 microns, whereas the ion-implanted regions 45b and 45c are side etched by 400 - 500 A which is smaller one order of magnitude.
Consequently, the configuration of the region 45a is changed to a region 45a' of a frustum form having inwardly inclined side surfaces with top ends terminating at points 0.4 - 0.5 microns inward from the edges of the Si3N4 film, whereas the regions 45b and 45c are changed to regions 45b' and 45c' having surfaces slightly etched. Accordingly, the edges of regions 45b and 45c are slightly rounded. Thus, the edges of this regions con-fronting the region 45a' are not etched, thus preserving the ~ ' , . . ' interfaces between the regions at the time of ion implantation.
Regions 45b' and 45c' are used as the base electrode, or a com-bined electrode and wiring layer of a transistor as will be described later. The edges of the regions 45b" and 45c" facing the not doped region 45a' are convexed with a negative slope.
The spacing between these isolated regions is less than 1 micron.
Then, under a state shown in Fig. 4I heat oxide films 48a and 48b are formed on the entire surface to a thickness of 0.2 - 0.3 microns. Although the Si3N4 film 46a' is slightly oxidized, but its configuration does not change to any appreci-able extent. But the SiO2 films 48a and 48b are also formed uniformly on the side surfaces of the not-implanted region 45a' underlying the Si3N4 film 46a'. During the step of forming the heat oxide films 48a and 48b, the P type impurity or boron in the regions 45b' and 45c' adjoining the region 43 is heat-dif-fused into the P type region 43 to form P~t regions 43a and 43b in the regions 43 which act as base contact. This state is shown in Fig. 4J.
Unstable portions (not shown) of the oxide films 48-a and 48b are removed with hydrofluoric acid and then etched with phosphoric acid at a temperature of 160~C for 30 minutes to remove the Si3N4 film 46a'. This state is shown in Fig. 4K show-ing that the top 45a'top of the not-implanted region 45a' has ,... .
been exposed.
A N type impurity such as phosphoror arsenic is heat diffused into the top 45a'top of the not-implanted polycrystal-line silicon region 45a' by using the SiO2 films 48a and 48b as masks, under a diffusion conditions of 950C and 20 minutes (for arsenic). As a consequence, the impurity diffuses through region 45a' into the base region 43 to have a thickness of 0.1 - 0.2 microns and a surface concentration of above lx102 atoms/cm3 tbereby forming a N+ emitter region 50. The region 45a' is converted into a N type conductivity region 45a' by being diffused with the N type impurity, the region 45a' acting as an emitter electrode or a combined emitter electrode and a wiring layer. This state is shown in Fig. 4L.
- Then, a window 51 is formed through a proper portion of the oxide film 48a disposed on the region 45b' to be utilized as a base electrode or a combined base electrode and wiring layer. Then, metal ~for example, aluminum) wiring layers 53 and 54 are formed on the region 45b' and on the top of the region 45a' through the window 51 by using a predetermined mask, as shown in Fig. 4M. Thus, a transistor is obtained which utilizes the substrate 41 as the collector region, the region 43 as the base region, regions 43a and 43b as the base contact region, the region 50 as the emitter region, the regions 45b' and 45c' as the base electrode, and the region 45a' as the emitter electrode. ~lthough the collector electrode i8 not shown, it is formed by well known method on the lower surface of the substrate, or on the upper surface thereof like another electrodes.
In the bipolar transistor thus formed, as it is pos-sible to dispose regions 45b", 45a" and 45c" acting as elec-trodes with spacings of less than one micron it is possible to decrease the base electrode and to decrease the collector-base parasitic capacitance, than those of the prior art transistor.
Further, this construction increases the density of the wirings by a factor of 2 resulting in an ultra high speed, and lower power IC transistor having a power delay product of several tens fJ and a propagation delay time of about 100 ps/gate.
With this construction, it is also possible to make one cell of a static bipolar RAM to be less thatn 1000 square microns with a conventional light exposure technique (minimum dimension - 2 microns).
Since the construction of the element is simple and since the manufacturing steps are also simple, it has been found by experiment that the electric characteristics of the transistors do not vary greatly and the heat resistant property is also more stable than the prior art transisters.
Further, with this construction, since the emitter region takes the form of a mesa and is remotely situated from the P+ contact re~ion, it is possible to greatly increase the insulating strength between emitter and base electrodes. The semiconductor device manufactured by this method is substan-tially flat.
Figs. S~ and 5B show modifications of Figs. 4A - 4M
which correspond to that shown in Figs. 3A and 3B. More particularly, at the step shown in Fig. 4H, the polycrystalline -:
3~1~
- silicon region 45a not-implanted with ions is etched with KOH
at 60 - 63C for about two minutes. Then, as shown in Fig. 4I, the region 45a would not be etched until the P type region 43 becomes exposed but a thickness of about 1200 - 1500 A would remain as shown by a portion 45as" shown in Fig. 5.
Then, oxide films 61a and 61b having a thickness of 0.24 - 0.3 microns is formed on the entire surface of the substrate by heat oxidation method, as shown in Fig. 5B. The oxidation conditions are 800~C and about 600 minutes. Then, the region 45as" is also oxidized completely.
Consequently, regions 45b', 45c' are insulated and separated from the region 45a" with oxide films having extreme-ly small width on the surface of the substrate. 45b" and 45c"
show that their thickness is slightly smaller than that of the regions 45b' and 45c' because of longer oxidation time.
Fig. 6 shows a modification of this invention shown by FIgs. 4A - 4M. More particularly, under a state shown in Fig.
4I, when oxide films 48a and 48b are formed on the surface of a substrate as shown in Fig. 4J, these oxide films 48a and 48b would be formed at a portion at which the region 43 (forming the base region) is exposed. Consequently, the P type impurity near the interface between the substrate and the oxide films would be absorbed by the oxide films thus tending to produce a N channel at this portion. To prevent this difficulty, sub-se~uent to the stop shown in Fig. 4K, a P type impurity isimplanted at a dose of 1013 - 1014 atoms/cm2 such that the :
~x~
peak of the ions reaches the bottom of the oxide film as shown in Fig. 6. At this time, the P type impurity is also injected into the region 45a' but this does not cause any trouble because a high concentration N type impurity is diffused later into this region. Since the P type impurity injected into the oxide films 48a and 48b overlying the regions 45b' and 45c' is the same as the impurity contained in the regions 45b' and 45c' no problem occurs.
Following the step shown in Fig. 6, the step shown in Fig. 4K and the remaining steps are executed.
Figs. 7A and 7B show a modification of this invention shown in Figs. 4A - 4M, wherein the number of times of the ion implantation executed in the step shown in Fig. 4F is increased to two. At first, a P type impurity is implanted at a dose of SxlO15 atoms/cm2 and under an implantation energy of 40-kev such that the peak of the impurity reaches a relatively shallow depth, for example a depth of 1000 A, of the region 45 (in the case of a polycrystalline silicon having a thickness of 5000 A).
As a result of this ion implantation, P type regions 45bl and 45b2 are formed in region 45. Then, the P type im-purity is implanted at a dose of SxlO15 atoms/cm2 and an im-plantation energy of 120 kev such that the peak appears at a depth of about 4000 A from the surface, thus forming P type regions 45bll and 45b22 in the region 45.
The regions 45bll and 45b22 formed by the second ion implantation extend toward the not-implanted region 45a beyond ~. , , ~ . .
~1~9~
the regions 45bl and 45b2. Thus, the regions 45b and 45c formed by the regions 45bl, 45bll, 45b2 and 45b22 project into the not-implanted region 45a thus not only minimizing the thickness of the insulator to be formed subsequently between the regions 45b and 45c but also increasing the effective cross-sectional area of the regions 45b and 45c. Fig. 7B shows the insulated and separated state. As can be noted from Fig.
7B the edges of the regions 45b and 45c facing the region 45 sharply stand up from the substrate, then slowly stand up and the connect to the upper surface through steep slopes. Con--sequently, the edges are generally convexed form.
Fig. 8A - 8R show still another embodiment of the semiconductor device according to this invention.
As shown in Fig. 8A, at first a N type se~iconductor substrate 61 having a resistivity of 1 ohm-cm is prepared. On the main surface of this substrate is formed a non-doped poly-crystalline silicon layer 62 having a thickness of 0.2 micron by well known CVD process. Then a silicon nitride (Si3N4) film 63 having a thickness of 0.12 microns is formed on the poly-crystalline silicon layer 62 and then a silicon oxide film 64(SiO2) is formed thereon to a thickness of 0.6 microns. Dur-ing the step of forming the oxide film 64, the concentration of the impurity is graded in the direction of thickness so that the concentration of the P type impurity such as boron increases toward upper. The concentration gradient is such that the boron concentration is substantially zero near the Si3N4 film 63 but ' ' ,.~
reaches about 2% near the upper surface. Such concentration gradient is useful for shaping this portion into an inverted frustum in the succeeding steps.
Then a Si3N4 film having a thickness of about 0.1 micron is formed on the SiO2 film 64. This state is shown in Fig. 8B.
Then, the Si3N4 film is shaped into a desired pat-tern 65a by a well known selective etching technique, for example plasma etching technique. This state is shown in Fig. 8C. Then the SiO2 film 64 is etched by using the region 65a as a mask.
It should be noted that the impurity concentration of the SiO2 film 64 increases toward upper. Such difference in the impurity concentration can be realized by changing the etching speed of the SiO2 film 64 for a buffer etchant, that is a hydrofluoric type etching solution. In other words, the etching speed is higher by about 2 - 3 times at low impurity concentration portion than at high impurity concentration portion so that as shown in Fig. 8D, the Si~2 film would become an inverted frustum 64a.
The etching condition at this time is about 1200 seconds for hydrofluoric acid. The upper portion of the region 64a is etched to a point about 0.7 microns inwardly spaced from the edges of the Si3N4 film 65a whereas the lower surface is etched to a point about 1.2 microns inwardly spaced. This state is shown in Fig.
8D.
, ... .
Thereafter, boron ions are implanted into the entire surface of the substrate by using the Si3N4 film 65a as a mask under the conditions of 40 kev and a dose of higher than 1x1015 .' .
1~91~8 atoms/cm2. This state is shown in ~iq. 8E. As shown, the Si3N4 film 63 is divided into a not-implanted region 65a and ion-im-planted regions 65b and 65c by using the Si3N4 film 65a as the mask.
Then ion-implanted regions 63b, 63a and 63c are removed with a phosphoric acid etchant. The etching is made by utiliz-- ing the fact that the etching speed of the implanted Si3N4 film - is 3 - 4 times faster than that of the not-implanted region. The etching completed state is shown in Fig. 8F.
The exposed portions of regions~ 64a and 63a not-im-planted with ions are slightly etched by the phosphoric acid etchant and converted into the regions 64a' and 63a'.
Then, the surface of the substrate is heat-oxidized at a temperature of llOO~C for 40 minutes by using regions 64a' and 63a' as masks, thus forming oxide films 67a and 67b having a thickness of about 6 microns as shown in Fig. 8G. As a con-sequence of forming these oxide films, the polycrystalline silicon layer 62 is is converted into an island region 62a~
Then, exposed portions of the nitride film 63a' on the poly-crystalline silicon region 62a are removed with a phosphoric acid etchant by using the oxide films 67a and 67b as masks~
This state is shown in Fig. 8. The conditions at this time are 160C and 20 minutes.
Thereafter, a non-doped polycrystalline silicon layer 68 is uniformly formed on the entire surface of the substrate by CVD process to a thickness of 3000 - 4000 A. This state is .
llZ9~
shown in Fig. 8I.
Under this state, ions of borons are implanted at a does of more than lx1015 atoms/cm2 and with an energy of 40 -120 kev. The ion implantation is made in a direction perpen-dicular to the substrate so that portions not seen from abovewould not be implanted with ions. Accordingly, the polycrys-talline silicon layer 68 comprises ion-implanted regions 68a, 68b and 68c and not-implanted regions 68d and 68e. Since the base on which the polycrystalline silicon layer is deposited is an inverted frustum, the silicon layer are concealed by the edges of the region 68~. The ions of boron are also implanted into the portions 62al and 62a2 of the polycrystalline silicon region 62 positioned immediately beneath layer 68.
Then, under the state shown in Fig. 8J, the assembly is heat treated at 800~C for 15 - 20 minutes for recovering the damage of the layers 68a, 68b, 68cl, 62al and 62a caused by ion implantation.
Following the heat treatment, regions 68d, 68e, 62a3 and 62a4 are removed bt using an alkaline etchant, KOH for ex-ample. Regions 62a3 and 62a4 are in direct contact or spaced a little from not-implanted region 62, as shown in Fig. 8K. The polycrystalline silicon region 62a' remaining after removal of regions 62a3 and 62a4 has a mesa shape, and the length of its upper surface is slightly shorter than the length between opposite edges of Si3N4 film 63a" deposited thereon.
The portions of the regions (68a + 62al) and (68c +
~ .
i ~l 2~
62a2) facing the region 62a' is convex shape projecting from the substrate with negative slope.
Then, the oxide film 64a' is etched off with a phos-phoric acid etchant. At the same time, the doped polycrystal-line silicon region 68b deposited on the oxide film 64a' isalso removed. This state is shown in Fig. 8L.
Then the polycrystalline silicon regions (68a + 68al) and (68c + 62a) are etched by using a predetermined mask to form wiring layers and or electrodes 69a and 69b. This state is shown in Fig. 8M. Then, the substrate is heat oxidized to cover the polycrystalline silicon regions 68a and 69a, the exposed portion of the substrate, and the side surface of the polycrystalline silicon region 62a' with oxide films 70a and 70b, under a heat oxidizing condition of 800 C. The resulting films have a thickness of 2000 - 3000 A. As a result of this heat oxidation treatment, the impurity contained in the poly-crystalline silicon regions 69a and 69b adjacent the surface of the substrate 61 would diffuse into the substrate thus forming P+ diffused regions 71a and 71b contiguous to these regions 69a and 69b. The depth of diffusion is about 0.3 to 0.4 microns, and these P diffused regions are used as the base contact region as will be described later. Fig. 8N shows this 8tate. ~The oxide film formed directly on the substrate 61 somewhat penerates into the substrate.
Ions of boron are implanted into the upper surface of the substrate in a direction perpendicular thereto under condi-tions of does of 1013 - 1014 atoms/cm2 and an implantion energy of 60 - 90 kev. The resulting region 72 is contiguous with the P+
regions 71a and 72b to form a base region. This state is shown in Fig. 80. The nitride film 63a is then removed with a phos-phor acid containing etchant and the N type impurity is causedto diffuse into the non-doped region 62a' whereby a N+ region 73 acting as an emitter region is formed in the surface of the substrate 61 adjacent the base region 72. The both sides of this emitter region 73 are covered by the heat oxides 70a and 70b and formed as a mesa. This state is shown in Fig. 8Q.
Then a window 75 is formed at a suitable portion of the oxide film 70a on the polycrystalline silicon layer 69 acting as the base electrodes by using a well known photoetching technique, and such metal as aluminum is vapor deposited onto the window 75 and onto the top of the region 62a' by a well known mask technique to form wiring layers 77 and 78. This state is shown in Fig. 8R.
Fig. 9 shows a general construction of an integrated circuit (IC) incorporated with a transistor prepared by the steps shown in Figs. 8A - 8R. In Fig. 8, elements identical to or manifesting the same performances as those shown in Fig. 8R
are designated by the same reference charactors. The integrated circuit shown in Fig. 9 comprises a P type semiconductor layer 80 , ... .
which constitutes a substrate together with a N type semicon-ductor layer 61, a N type buried layer 81 interposed between both semiconductor layers 61 and 80 which are used as a collec-tor contact. As can be noted from Fig. 9, a portion thereof is extends to the surface of the substrate. The integrated circuit also comprises a collector electrode constituted by a polycrys-talline silicon layer 83 in contact with the collector contact 81 at the surface of the substrate. The region 83 is formed at the same time as the emitter electrode 62a' and diffused with an impurity. There are also provided with a wiring layer made of such metal as aluminum and formed on the collector electrode, and oxide films 85.
This construction provides ultra high speed elements having a propagation delay time o~ the order of 60 ps/gate.
Similar to the foregoing embodiments, this integrated circuit prepared by convential light exposure technique enables to reduce the cell area of a static bipolar RAM to less than 1000 square microns.
Where this construction is applied to an IC as it is possible to greatly decrease the area of an external base region it is possible to increase the fT of a reverse oper-ation transistor thus ensuring a high speed operation. When ~abricating the IC of the construction described above by form-ing printed regions of the transistor in the base region, on the configuration of the base pattern is determined succeeding steps are self-aligned so that all steps before forming the electrode can be executed without using any photomasks. For this reason, it is possible to completely eliminate all problems involving position alignment and high working accuracy which have been indispensable for all photoetching steps in the base region. This enables to manufacture extremely fine transistors.
Figs. lOA - lOC show various steps of manufacturing a junction type field effect transistor. To prepare this tran-sistor, succeeding to the step shown in Fig. 8N, without per-forming the ion implantation step shown in Fig. 80, the step is advanced to the step shown in Fig. lOA, and a region 63al is removed by etching with a phosphoric acid etching solution.
Then a P or N type impurity is diffused into the region 62a' so as to form a gate electrode region 90 in a region bounded by oxide films 70a and 70b on the semiconductor substrate 61. The region 62a" diffused with the impurity is used as a gate electrode or a wiring layer. This state is shown in Fig. lOB.
Then, similar to the step shown in Fig. 8R, metal wiring layers 91 and 92 are formed. This state is shown in Fig. lOC.
The advantages provided by this construction is identical to those of the previous embodiment.
Figs. llA and llB show a modified embodiment of this invention, in which succeeding to the process step shown in Fig. 8J, when removing regins 68d and 68e not-implanted with an impurity by etching, these regions would not be not etched until the surface of the substrate becomes exposed thus leaving regions lOOa and lOOb. The succeeding steps are similar to those shown in Figs. 8L and 8M. After completing the step 8M, ~gll8 a thermal oxide film 101 formed on the substrate. At this time, the not-implanted regions lOOa and lOOb are oxidized into oxide films which are shaped to slightly project into the sur-face of the substrate. This state is shown in Fig. llB which corresponds to Fig. 8N. The succeeding steps are similar to the steps shown in Figs. 80 - 8R.
It should be understood that the invention is not - limited to the specific embodiment described above and that various changes and modification will be obvious to one skilled in the art.
Claims (21)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. In a bipolar transistor of the type comprising a semiconductor substrate of a first conductivity type and acting as a collector region; an island shaped base region of a second conductivity type formed on the surface of said semiconductor substrate and surrounded by a first insulating film; a first conductivity type emitter region formed in said base region; a doped polycrystalline silicon region of the first conductivity type, said doped poly-crystalline silicon region being in the form of a mesa adjacent said emitter region and acting as an emitter electrode, a second conductivity type base contact in contact with the periphery of said base region; and a doped polycrystalline silicon region of the second conductivity type continuous with said base contact and extending in the direction of said first insulating film, said doped polycrystalline silicon region of the second conductivity type acting as a base elec-trode; the improvement wherein said doped polycrystalline sili-con region of the second conductivity type takes the form of a projection; one side surface of said projection adjacent said doped polycrystalline silicon region of the first conductivity type having a negative coefficient of gradient between a por-tion of said projection at or near said projection and the upper end of said projection, and wherein said bipolar transis-tor further comprising a second insulating covering substan-tially the entire surface of said substrate, and a wiring layer interconnecting said respective doped polycrystalline silicon regions and the other elements.
2. The bipolar transistor according to claim 1 wherein said emitter region takes the form of a mesa.
3. In a junction type field effect transistor of the type comprising a semiconductor type substrate of a first conduc-tivity type; a first insulating film forming an island shaped region on one surface of said semiconductor substrate; source and drain regions of a second conductivity type formed on a portion of said semiconductor substrate adjacent said first insulating film defining said island shaped region; a doped polycrystalline silicon region of a second conductive type extending from said source and drain regions onto said first insulating film and acting as source and drain electrodes respectively; a gate region of the second conductivity type formed in said island shaped region of said semiconductor substrate; a mesa shaped doped polycrystalline silicon region of the second conductivity type formed on said gate region and acting as a gate electrode; a second insulating film covering substantially the entire surface of said substrate; and a wiring layer interconnecting respective doped polycrystalline silicon regions and the other elements, the improvement wherein said doped polycrystalline region utilized as said source and drain electrodes takes the form of a projection, one side surface of said projection adjacent said doped polycrystalline silicon region utilized as said gate electrode having a gener-ally negative coefficient of gradient between a portion of said projection at or near said substrate and the top of said pro-jection.
4. The field effect transistor according to claim 3 wherein said gate region takes the form of a mesa.
5. A method of manufacturing a semiconductor device com-prising the steps of:
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
implanting ions of an impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of said projection at or near said substrate and the upper end of said projection; and covering the surface of said substrate with an insu-lating film.
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
implanting ions of an impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of said projection at or near said substrate and the upper end of said projection; and covering the surface of said substrate with an insu-lating film.
6. The method according to claim 5 which further com-prises the step of removing said second insulating film after exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions.
7. The method according to claim 5 wherein said substrate is formed by depositing an insulating film onto said semiconductor substrate.
8. The method according to claim 5 wherein following said ion implantation step, the semiconductor device is heat-treated to recover damage of crystals caused by said ion implantation.
9. A method of manufacturing a semiconductor device comprising the steps of:
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first insulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting ions of said impurity into the exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of said projection at or near said substrate and the upper end of said projection; and covering the surface of said substrate with an insu-lating film.
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first insulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting ions of said impurity into the exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions to form a projection having side surfaces having a negative coefficient of gradient between a portion of said projection at or near said substrate and the upper end of said projection; and covering the surface of said substrate with an insu-lating film.
10. A method of manufacturing a semiconductor device com-prising the steps of forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask.
implanting ions of an impurity into an exposed surface of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first insu-lating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
removing said second insulating film;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions for insulating and separating each other said ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with said ions, thus forming a projection on said ion implanted polycrystalline semiconductor layer, said projection having a side surface having a negative coefficient of gradient between a portion on said projection at or near said substrate and the upper end of said projection, and pro-viding for said polycrystalline semiconductor layer a concave side edge having a positive coefficient of gradient between a portion at or near said substrate and one end of said concave side edge;
covering one surface of said substrate with a fourth insulating film;
removing said first insulating film overlying the portion of said polycrystalline semiconductor layer not-im-planted with said ions;
doping an impurity into a portion of said polycrystal-line semiconductor region not-implanted with said ions; and covering the surface of said substrate with a fifth insulating film.
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask.
implanting ions of an impurity into an exposed surface of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first insu-lating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
removing said second insulating film;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions for insulating and separating each other said ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with said ions, thus forming a projection on said ion implanted polycrystalline semiconductor layer, said projection having a side surface having a negative coefficient of gradient between a portion on said projection at or near said substrate and the upper end of said projection, and pro-viding for said polycrystalline semiconductor layer a concave side edge having a positive coefficient of gradient between a portion at or near said substrate and one end of said concave side edge;
covering one surface of said substrate with a fourth insulating film;
removing said first insulating film overlying the portion of said polycrystalline semiconductor layer not-im-planted with said ions;
doping an impurity into a portion of said polycrystal-line semiconductor region not-implanted with said ions; and covering the surface of said substrate with a fifth insulating film.
11. The method according to claim 10 wherein said substrate comprises a semiconductor substrate and an insulating film deposited thereon.
12 . A method of manufacturing a semiconductor device com-prising the steps of:
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting the ions of said impurity into an exposed surface of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
removing said second insulating film;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions for insulating and separating each other said ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with said ions, thus forming a projection on said ion-implanted polycrystalline semiconductor, said pro-jection having a side surface having a negative coefficient of gradient between a portion on said projection at or near said substrate and the upper end of said projection, and providing for said polycrystalline semiconductor layer a concave side edge having a positive coefficient of gradient between a por-tion at or near said substrate and one end of said concave side edge;
covering one surface of said substrate with a fourth insulating film;
remaining said first insulating film ovelying the por-tion of said polycrystalline semiconductor layer not-implanted with said ions;
doping an impurity into a portion of said polycrystal-line semiconductor layer not-implanted with said ions; and covering the surface of said substrate with a fifth insulating film.
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film in accordance with a predetermined mask pattern;
etching said first insulating film by using remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting the ions of said impurity into an exposed surface of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
removing said second insulating film;
etching said exposed portion of said polycrystalline semiconductor layer not-implanted with said ions for insulating and separating each other said ion-implanted polycrystalline semiconductor layer and adjacent polycrystalline semiconductor layer not-implanted with said ions, thus forming a projection on said ion-implanted polycrystalline semiconductor, said pro-jection having a side surface having a negative coefficient of gradient between a portion on said projection at or near said substrate and the upper end of said projection, and providing for said polycrystalline semiconductor layer a concave side edge having a positive coefficient of gradient between a por-tion at or near said substrate and one end of said concave side edge;
covering one surface of said substrate with a fourth insulating film;
remaining said first insulating film ovelying the por-tion of said polycrystalline semiconductor layer not-implanted with said ions;
doping an impurity into a portion of said polycrystal-line semiconductor layer not-implanted with said ions; and covering the surface of said substrate with a fifth insulating film.
13. A method of manufacturing a semiconductor device com-prising the steps of:
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film according to a predetermined mask pattern;
etching said first insulating film by using a remain-ing portion of said second insulating film as a mask;
implanting ions of an impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first insulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions thus separating an ion implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with said ions and having a relatively thin thickness;
heat-oxidizing the substrate surface so as to oxidize said relatively thin not-implanted polycrystalline semiconductor region to insulate and separate the same from said ion implanted polycrystalline semiconductor region, thus providing for said insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of said projection at or near said substrate and one end of said projection, and providing for said insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near said substrate;
remaining said polycrystalline semiconductor region not-implanted with said ions;
doping an impurity into said polycrystalline semicon-ductor region non-doped with said ions; and covering the substrate surface with a third insulating film.
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film according to a predetermined mask pattern;
etching said first insulating film by using a remain-ing portion of said second insulating film as a mask;
implanting ions of an impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
side etching the remaining portion of said first insulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with said ions;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions thus separating an ion implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with said ions and having a relatively thin thickness;
heat-oxidizing the substrate surface so as to oxidize said relatively thin not-implanted polycrystalline semiconductor region to insulate and separate the same from said ion implanted polycrystalline semiconductor region, thus providing for said insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of said projection at or near said substrate and one end of said projection, and providing for said insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near said substrate;
remaining said polycrystalline semiconductor region not-implanted with said ions;
doping an impurity into said polycrystalline semicon-ductor region non-doped with said ions; and covering the substrate surface with a third insulating film.
A method of manufacturing a semiconductor device com-prising the steps of:
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film according to a predetermined mask pattern;
etching said first insulating film by using a remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting said ions of said impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions thus separating an ion implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with said ions and having a relatively thin thickness;
heat oxidizing the substrate surface so as to oxidize said relatively thin not-implanted polycrystalline semiconductor region to insulate and separate the same from said ion-implanted polycrystalline semiconductor region, thus providing for said insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of said projection at on near said substrate and one end of said projection, and providing for said insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near said substrate;
removing said insulating film covering said polycrys-talline semiconductor region not implanted with said ions;
doping an impurity into said polycrystalline semicon-ductor region not doped with said ions, and covering the substrate surface with a third insulating film.
forming a polycrystalline semiconductor layer on a substrate;
sequentially forming first and second insulating films having different etching characteristics on said polycrystalline semiconductor layer;
etching said second insulating film according to a predetermined mask pattern;
etching said first insulating film by using a remaining portion of said second insulating film as a mask;
side etching the remaining portion of said first in-sulating film for exposing a portion of said polycrystalline semiconductor layer not-implanted with ions of an impurity;
implanting said ions of said impurity into an exposed portion of said polycrystalline semiconductor layer by using remaining portions of said first and second insulating films as masks;
etching said exposed portion of said polycrystalline semiconductor layer not implanted with said ions thus separating an ion implanted polycrystalline semiconductor region from a polycrystalline semiconductor region not-implanted with said ions and having a relatively thin thickness;
heat oxidizing the substrate surface so as to oxidize said relatively thin not-implanted polycrystalline semiconductor region to insulate and separate the same from said ion-implanted polycrystalline semiconductor region, thus providing for said insulated and separated polycrystalline semiconductor region a projection having a side surface having a negative coefficient of gradient between a portion of said projection at on near said substrate and one end of said projection, and providing for said insulated and separated polycrystalline semiconductor region a mesa having a positive coefficient of gradient at or near said substrate;
removing said insulating film covering said polycrys-talline semiconductor region not implanted with said ions;
doping an impurity into said polycrystalline semicon-ductor region not doped with said ions, and covering the substrate surface with a third insulating film.
15. A method of manufacturing a bipolar transistor com-prising the steps of:
selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into said substrate and for simultaneously forming a base diffusion window surrounded by said region;
forming a base region having a second conductivity type through said window;
forming a polycrystalline silicon layer, and second and third insulating layers having different etching character-istics on said substrate;
selectively etching said third insulating layer to form a third insulation region on said base region and near the central portion thereof;
etching said second insulating layer to form a second insulating region by using said third insulating region as a mask;
implanting ions of an impurity having the same conduc-tivity type as said base region into said polycrystalline silicon layer by utilizing said second and third insulating regions as masks, thereby separating the same into a region implanted with said ions and a region not-implanted with said ions;
side etching said second insulating region for expos-ing said polycrystalline silicon region not-implanted with said ions;
etching said region not-implanted with said ions for insulating and separating said regions implanted and not-im-planted with said ions;
forming a heat oxide film on the surface of said substrate and at the same time diffusing an impurity in said ion implanted region contiguous to said base region into the same for forming a base contact;
removing said insulating film for exposing said polycrystalline silicon region not-implanted with said ions;
diffusing an impurity of said first conductivity type into said exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in said base region of said semiconductor substrate, and forming wiring layers in said ion-implanted region and in said regions diffused with said impurity of said first conductivity type.
selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into said substrate and for simultaneously forming a base diffusion window surrounded by said region;
forming a base region having a second conductivity type through said window;
forming a polycrystalline silicon layer, and second and third insulating layers having different etching character-istics on said substrate;
selectively etching said third insulating layer to form a third insulation region on said base region and near the central portion thereof;
etching said second insulating layer to form a second insulating region by using said third insulating region as a mask;
implanting ions of an impurity having the same conduc-tivity type as said base region into said polycrystalline silicon layer by utilizing said second and third insulating regions as masks, thereby separating the same into a region implanted with said ions and a region not-implanted with said ions;
side etching said second insulating region for expos-ing said polycrystalline silicon region not-implanted with said ions;
etching said region not-implanted with said ions for insulating and separating said regions implanted and not-im-planted with said ions;
forming a heat oxide film on the surface of said substrate and at the same time diffusing an impurity in said ion implanted region contiguous to said base region into the same for forming a base contact;
removing said insulating film for exposing said polycrystalline silicon region not-implanted with said ions;
diffusing an impurity of said first conductivity type into said exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in said base region of said semiconductor substrate, and forming wiring layers in said ion-implanted region and in said regions diffused with said impurity of said first conductivity type.
16. The method according to claim 15 wherein after removing said second insulating film, ions of an impurity of a second conductivity type are implanted such that the peak of said ions would appear at a depth substantially equal to the thickness of said heat oxide film overlying said substrate.
17. The method according to claim 15 wherein said step of implanting ions into said polycrystalline silicon layer is executed a number of times such that peaks of said implanted ions appear at different depth.
18. A method of manufacturing a bipolar transistor comprising the steps of:
selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into said substrate and for simultaneously forming a base diffusion window surrounded by said region;
forming a base region having a second conductivity type through said window;
forming a polycrystalline silicon layer, and second and third insulator layers having different etching character-istics on said substrate;
selectively etching said third insulating layer to form a third insulating region on said base region and near the central portion thereof;
etching said second insulating layer to form a second insulating region by using said third insulating region at a mask;
side etching said second insulating region for exposing said polycrystalline silicon region not implanted with ions of an impurity having the same conductivity type as said base region;
implanting said ions into said polycrystalline silicon layer by utilizing said second and third insulating regions as masks thereby separating the same into a region implanted with said ions and a region not implanted with said ions;
etching said region not implanted with said ions for insulating and separating said regions implanted and not-im-planted with said ions;
forming a heat oxide film on the surface of said substrate and at the same time diffusing an impurity in said ion-implanted region into the same for forming a base contact;
removing said insulating film for exposing said polycrystalline silicon region not implanted with said ions;
diffusing an impurity of said first conductivity type into said exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in said base region of said semiconductor substrate, and forming wiring layers in said ion-implanted region and in said regions diffused with said impurity of said first con-ductivity type.
selectively oxidizing a semiconductor substrate of a first conductivity type for forming a first insulator region extending into said substrate and for simultaneously forming a base diffusion window surrounded by said region;
forming a base region having a second conductivity type through said window;
forming a polycrystalline silicon layer, and second and third insulator layers having different etching character-istics on said substrate;
selectively etching said third insulating layer to form a third insulating region on said base region and near the central portion thereof;
etching said second insulating layer to form a second insulating region by using said third insulating region at a mask;
side etching said second insulating region for exposing said polycrystalline silicon region not implanted with ions of an impurity having the same conductivity type as said base region;
implanting said ions into said polycrystalline silicon layer by utilizing said second and third insulating regions as masks thereby separating the same into a region implanted with said ions and a region not implanted with said ions;
etching said region not implanted with said ions for insulating and separating said regions implanted and not-im-planted with said ions;
forming a heat oxide film on the surface of said substrate and at the same time diffusing an impurity in said ion-implanted region into the same for forming a base contact;
removing said insulating film for exposing said polycrystalline silicon region not implanted with said ions;
diffusing an impurity of said first conductivity type into said exposed polycrystalline silicon region for forming an emitter region of the first conductivity type in said base region of said semiconductor substrate, and forming wiring layers in said ion-implanted region and in said regions diffused with said impurity of said first con-ductivity type.
19. A method of manufacturing a bipolar transistor com-prising the steps of:
successively forming on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching charac-teristic;
said second insulating film having an impurity con-centration which increases from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film, by using remaining portion of said third insulating film as a mask, to a point inwardly speed from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said second and first insulating films by using the remaining portion of said third insulating film;
removing portions of said second and first insulating films implanted with said ions.
heating a first polycrystalline silicon layer about said first insulating region not-implanted with said ions of said first insulating film to heat oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region as a mask thereby forming a base region window;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not implanted with the ions;
etching said exposed and not implanted region for forming an island shaped polycrystalline silicon region having a top portion projecting into said first insulating region, said island shaped polycrystalline silicon region being insu-lated and separated from said polycrystalline silicon region implanted with said ions;
removing said second insulating region;
etching said region implanted with the ions to change the same to have a predetermined shape;
heating said substrate to form a heat oxide film on the surface of said substrate and at the same time to cause the impurity in said polycrystalline silicon region implanted with the ions and in contact with said substrate to diffuse thereinto for forming a base contact the first conductivity type;
implanting ions of an impurity of the first conduc-tivity type into a region on the surface of said substrate connected to said base contact thus forming a base region.
removing said first insulating film on the polycrys-talline silicon region not-implanted with said ions;
diffusing an impurity of the first conductivity type in said polycrystalline silicon region not implanted with said ions for forming an emitter region of a second conductivity type in said polycrystalline silicon region not implanted with said ions, and forming wiring layers for said region implanted with the ions and for said polycrystalline silicon region diffused with said impurity of the first conductivity type.
successively forming on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching characteristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching charac-teristic;
said second insulating film having an impurity con-centration which increases from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film, by using remaining portion of said third insulating film as a mask, to a point inwardly speed from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said second and first insulating films by using the remaining portion of said third insulating film;
removing portions of said second and first insulating films implanted with said ions.
heating a first polycrystalline silicon layer about said first insulating region not-implanted with said ions of said first insulating film to heat oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region as a mask thereby forming a base region window;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not implanted with the ions;
etching said exposed and not implanted region for forming an island shaped polycrystalline silicon region having a top portion projecting into said first insulating region, said island shaped polycrystalline silicon region being insu-lated and separated from said polycrystalline silicon region implanted with said ions;
removing said second insulating region;
etching said region implanted with the ions to change the same to have a predetermined shape;
heating said substrate to form a heat oxide film on the surface of said substrate and at the same time to cause the impurity in said polycrystalline silicon region implanted with the ions and in contact with said substrate to diffuse thereinto for forming a base contact the first conductivity type;
implanting ions of an impurity of the first conduc-tivity type into a region on the surface of said substrate connected to said base contact thus forming a base region.
removing said first insulating film on the polycrys-talline silicon region not-implanted with said ions;
diffusing an impurity of the first conductivity type in said polycrystalline silicon region not implanted with said ions for forming an emitter region of a second conductivity type in said polycrystalline silicon region not implanted with said ions, and forming wiring layers for said region implanted with the ions and for said polycrystalline silicon region diffused with said impurity of the first conductivity type.
20. A method of manufacturing a junction type field effect transistor comprising the steps of:
successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching charac-teristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching characteristic;
said second insulating film having an impurity con-centration which increase from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film, by using remaining portion of said third insulating film, to a point inwardly spaced from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said third and first insulating films by using the remaining portion of said third insulating film;
removing portion of said third and first insulating films implanted with said ions;
heating a first polycrystalline silicon layer about said first insulating region not-implanted with the ions of said first insulating film to heat oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region as a mask;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into first and second regions implanted with said ions, and a region partially exposed and not implanted with the ions;
etching said exposed and not implanted region for forming an island shaped first polycrystalline silicon region having a top portion projecting into said first insulating region, said island shaped polycrystalline silicon region being insulated and separated from said polycrystalline silicon region implanted with said ions;
removing said second insulating region;
etching said region implanted with the ions to change the same to have a predetermined shape;
heating said substrate to form a heat oxide film on the surface of said substrate and at the same time to cause the impurity in said polycrystalline silicon region implanted with ions and in contact with said substrate to diffuse thereinto for forming a base contact of the first conductivity type;
implanting ions of the first conductivity type into a region on the surface of said substrate connected to said base contact thus forming a base region;
removing said first insulating film on the polycrys-talline silicon region not-implanted with said ions;
diffusing an impurity of the first conductivity type in said polycrystalline silicon region not-implanted with said ions for forming a gate region on the surface of said substrate;
and forming wiring layers for said region implanted with the ions and for said polycrystalline diffused with said impurity of the first conductivity type.
successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching charac-teristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching characteristic;
said second insulating film having an impurity con-centration which increase from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film, by using remaining portion of said third insulating film, to a point inwardly spaced from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said third and first insulating films by using the remaining portion of said third insulating film;
removing portion of said third and first insulating films implanted with said ions;
heating a first polycrystalline silicon layer about said first insulating region not-implanted with the ions of said first insulating film to heat oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region as a mask;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the inverted frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into first and second regions implanted with said ions, and a region partially exposed and not implanted with the ions;
etching said exposed and not implanted region for forming an island shaped first polycrystalline silicon region having a top portion projecting into said first insulating region, said island shaped polycrystalline silicon region being insulated and separated from said polycrystalline silicon region implanted with said ions;
removing said second insulating region;
etching said region implanted with the ions to change the same to have a predetermined shape;
heating said substrate to form a heat oxide film on the surface of said substrate and at the same time to cause the impurity in said polycrystalline silicon region implanted with ions and in contact with said substrate to diffuse thereinto for forming a base contact of the first conductivity type;
implanting ions of the first conductivity type into a region on the surface of said substrate connected to said base contact thus forming a base region;
removing said first insulating film on the polycrys-talline silicon region not-implanted with said ions;
diffusing an impurity of the first conductivity type in said polycrystalline silicon region not-implanted with said ions for forming a gate region on the surface of said substrate;
and forming wiring layers for said region implanted with the ions and for said polycrystalline diffused with said impurity of the first conductivity type.
21. A method of manufacturing a bipolar transistor com-prising the steps of:
successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching charac-teristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching characteristic;
said second insulating film having an impurity con-centration which increases from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film by using remaining portion of said third insulating film as a mask, to a point inwardly spaced from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said third and first insulating films by using the remaining portion of said third insulating film;
removing portions of said third and first insulating films implanted with the ions;
heating a first polycrystalline silicon layer about said first insulating region not-implanted with said ions of said first insulating film to heat-oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region thereby forming a base region window;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the invented frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions;
etching said exposed and not-implanted region for forming an ion-implanted polycrystalline silicon region and a relatively thin polycrystalline silicon region implanted with the ions and disposed adjacent to said ion-implanted polycrys-talline silicon region;
oxidizing said relatively thin polycrystalline silicon region not implanted with the ions to insulate and separate said ion implanted and not-implanted polycrystalline silicon regions;
said insulated and separated polycrystalline silicon region implanted with the ions having an edge projecting from a portion at or near said substrate, said polycrystalline silicon region not-implanted with the ions being in the form of a mesa having edges of a positive coefficient of gradient between a portion thereof at or near said substrate and the top of said mesa, said oxidation step causing an impurity in said ion-im-planted region to diffuse into said substrate to form a base contact of the first conductivity type;
forming a base region by implanting ions of an impurity of the first conductivity type into a region on said substrate surface connected to said base region;
removing said first insulating film on said polycrys-talline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type into said polycrystalline region not-implanted with the ion so as to form an emitter region of the second conductivity type in said base region in said substrate surface and forming wiring layers for said polycrystalline silicon region implanted with the ions and for said polycrystalline silicon region diffused with said impurity of the first conductivity type.
successively forming, on a semiconductor substrate of a first conductivity type, a first polycrystalline silicon layer, a first insulating film having a first etching charac-teristic, a second insulating film having a second etching characteristic, and a third insulating film having said first etching characteristic;
said second insulating film having an impurity con-centration which increases from a portion thereof in contact with said first insulating film toward upper;
selectively etching said third insulating film in accordance with a predetermined pattern;
etching said second insulating film by using remaining portion of said third insulating film as a mask, to a point inwardly spaced from an edge of said third insulating film to form a second insulating region of an inverted frustum shape;
implanting ions of an impurity into said third and first insulating films by using the remaining portion of said third insulating film;
removing portions of said third and first insulating films implanted with the ions;
heating a first polycrystalline silicon layer about said first insulating region not-implanted with said ions of said first insulating film to heat-oxidize said first polycrys-talline silicon layer up to the surface of said substrate by using the remaining first insulating region thereby forming a base region window;
forming a non-doped second polycrystalline silicon layer over the entire surface of said substrate;
implanting ions of an impurity of the first conduc-tivity type by using the second polycrystalline silicon layer deposited on the invented frustum shaped second insulating region as a mask for converting said first and second polycrys-talline silicon layers into a region implanted with the ions and a region partially exposed and not-implanted with the ions;
etching said exposed and not-implanted region for forming an ion-implanted polycrystalline silicon region and a relatively thin polycrystalline silicon region implanted with the ions and disposed adjacent to said ion-implanted polycrys-talline silicon region;
oxidizing said relatively thin polycrystalline silicon region not implanted with the ions to insulate and separate said ion implanted and not-implanted polycrystalline silicon regions;
said insulated and separated polycrystalline silicon region implanted with the ions having an edge projecting from a portion at or near said substrate, said polycrystalline silicon region not-implanted with the ions being in the form of a mesa having edges of a positive coefficient of gradient between a portion thereof at or near said substrate and the top of said mesa, said oxidation step causing an impurity in said ion-im-planted region to diffuse into said substrate to form a base contact of the first conductivity type;
forming a base region by implanting ions of an impurity of the first conductivity type into a region on said substrate surface connected to said base region;
removing said first insulating film on said polycrys-talline silicon region not-implanted with the ions;
diffusing an impurity of the first conductivity type into said polycrystalline region not-implanted with the ion so as to form an emitter region of the second conductivity type in said base region in said substrate surface and forming wiring layers for said polycrystalline silicon region implanted with the ions and for said polycrystalline silicon region diffused with said impurity of the first conductivity type.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8799678A JPS5515230A (en) | 1978-07-19 | 1978-07-19 | Semiconductor device and its manufacturing method |
| JP8799778A JPS5515231A (en) | 1978-07-19 | 1978-07-19 | Manufacturing method of semiconductor device |
| JP87996/'78 | 1978-07-19 | ||
| JP87997/'78 | 1978-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1129118A true CA1129118A (en) | 1982-08-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA331,965A Expired CA1129118A (en) | 1978-07-19 | 1979-07-17 | Semiconductor devices and method of manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4379001A (en) |
| CA (1) | CA1129118A (en) |
| DE (1) | DE2928923A1 (en) |
| FR (1) | FR2433833A1 (en) |
| GB (1) | GB2030002B (en) |
| NL (1) | NL189102C (en) |
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| DE3064143D1 (en) * | 1979-12-03 | 1983-08-18 | Ibm | Process for producing a vertical pnp transistor and transistor so produced |
| JPS56146246A (en) * | 1980-04-14 | 1981-11-13 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| US4438556A (en) * | 1981-01-12 | 1984-03-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions |
| JPS57194572A (en) * | 1981-05-27 | 1982-11-30 | Clarion Co Ltd | Semiconductor device and manufacture thereof |
| US4465528A (en) * | 1981-07-15 | 1984-08-14 | Fujitsu Limited | Method of producing a walled emitter semiconductor device |
| US4503601A (en) * | 1983-04-18 | 1985-03-12 | Ncr Corporation | Oxide trench structure for polysilicon gates and interconnects |
| US4636834A (en) * | 1983-12-12 | 1987-01-13 | International Business Machines Corporation | Submicron FET structure and method of making |
| US4551906A (en) * | 1983-12-12 | 1985-11-12 | International Business Machines Corporation | Method for making self-aligned lateral bipolar transistors |
| US4546535A (en) * | 1983-12-12 | 1985-10-15 | International Business Machines Corporation | Method of making submicron FET structure |
| NL8402223A (en) * | 1984-07-13 | 1986-02-03 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND DEVICE, MANUFACTURED BY USE THEREOF |
| NL8402859A (en) * | 1984-09-18 | 1986-04-16 | Philips Nv | METHOD FOR MANUFACTURING SUBMICRON GROUPS IN E.g., SEMICONDUCTOR MATERIAL AND DEVICES OBTAINED BY THESE METHOD. |
| NL8700640A (en) * | 1987-03-18 | 1988-10-17 | Philips Nv | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF |
| US4745079A (en) * | 1987-03-30 | 1988-05-17 | Motorola, Inc. | Method for fabricating MOS transistors having gates with different work functions |
| US5675164A (en) * | 1995-06-07 | 1997-10-07 | International Business Machines Corporation | High performance multi-mesa field effect transistor |
| KR100329605B1 (en) * | 1995-09-25 | 2002-11-04 | 주식회사 하이닉스반도체 | Method for manufacturing metal wiring in semiconductor device |
| US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
| US7247578B2 (en) * | 2003-12-30 | 2007-07-24 | Intel Corporation | Method of varying etch selectivities of a film |
| US20090170331A1 (en) * | 2007-12-27 | 2009-07-02 | International Business Machines Corporation | Method of forming a bottle-shaped trench by ion implantation |
| KR101631165B1 (en) * | 2009-12-14 | 2016-06-17 | 삼성전자주식회사 | Method Of Forming Semiconductor Cell Structure, Method Of Forming Semiconductor Device Comprising The Semiconductor Cell Structure, And Method Of Forming Semiconductor Module Comprising The Semiconductor Device |
| FR3051966B1 (en) | 2016-05-27 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR FORMING A FUNCTIONALIZED GUIDING PATTERN FOR A GRAPHO-EPITAXY PROCESS |
| FR3051965A1 (en) | 2016-05-27 | 2017-12-01 | Commissariat Energie Atomique | METHOD FOR FORMING A FUNCTIONALIZED GUIDING PATTERN FOR A GRAPHO-EPITAXY PROCESS |
| FR3051964B1 (en) * | 2016-05-27 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR FORMING A FUNCTIONALIZED GUIDING PATTERN FOR A GRAPHO-EPITAXY PROCESS |
| CN110471099B (en) * | 2019-06-28 | 2023-03-10 | 上海芬创信息科技有限公司 | Ion sensor and preparation method thereof |
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| GB1417170A (en) * | 1972-12-22 | 1975-12-10 | Mullard Ltd | Methods of manufacturing semiconductor devices |
| US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
| JPS5928992B2 (en) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | MOS transistor and its manufacturing method |
| JPS51127682A (en) * | 1975-04-30 | 1976-11-06 | Fujitsu Ltd | Manufacturing process of semiconductor device |
| US4162506A (en) * | 1976-04-27 | 1979-07-24 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor integrated circuit device with dual thickness poly-silicon wiring |
| JPS539469A (en) * | 1976-07-15 | 1978-01-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device having electrode of stepped structure and its production |
| NL7703941A (en) * | 1977-04-12 | 1978-10-16 | Philips Nv | PROCESS FOR THE MANUFACTURE OF A SEMI-CONTROLLED DEVICE AND DEVICE, MANUFACTURED BY APPLICATION OF THE PROCESS. |
| JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
| FR2417853A1 (en) * | 1978-02-17 | 1979-09-14 | Thomson Csf | PROCESS FOR MAKING A MOS AND TRANSISTOR TYPE TRANSISTOR MADE ACCORDING TO THIS PROCEDURE |
| JPS54140483A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Semiconductor device |
| US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
| US4290185A (en) * | 1978-11-03 | 1981-09-22 | Mostek Corporation | Method of making an extremely low current load device for integrated circuit |
| JPS5586151A (en) * | 1978-12-23 | 1980-06-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit |
| US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
| US4234357A (en) * | 1979-07-16 | 1980-11-18 | Trw Inc. | Process for manufacturing emitters by diffusion from polysilicon |
| US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
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1979
- 1979-07-17 CA CA331,965A patent/CA1129118A/en not_active Expired
- 1979-07-18 FR FR7918558A patent/FR2433833A1/en active Granted
- 1979-07-18 US US06/058,417 patent/US4379001A/en not_active Expired - Lifetime
- 1979-07-18 GB GB7924980A patent/GB2030002B/en not_active Expired
- 1979-07-18 DE DE19792928923 patent/DE2928923A1/en active Granted
- 1979-07-19 NL NLAANVRAGE7905607,A patent/NL189102C/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2433833A1 (en) | 1980-03-14 |
| US4379001A (en) | 1983-04-05 |
| GB2030002B (en) | 1983-03-30 |
| NL7905607A (en) | 1980-01-22 |
| DE2928923C2 (en) | 1989-04-06 |
| DE2928923A1 (en) | 1980-02-07 |
| NL189102C (en) | 1993-01-04 |
| FR2433833B1 (en) | 1984-01-13 |
| NL189102B (en) | 1992-08-03 |
| GB2030002A (en) | 1980-03-26 |
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